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11. 发明授权

US09163994B2 Electronic mirror and method for displaying image using the same 有权
标题翻译：电子镜和使用其显示图像的方法
公开(公告)号：US09163994B2
公开(公告)日：2015-10-20
申请号：US12385908
申请日：2009-04-23
申请人： Chan Wook Baik , Sun il Kim , Changwon Lee
发明人： Chan Wook Baik , Sun il Kim , Changwon Lee
IPC分类号： G09G3/00 , G01J5/02 , A61B5/01 , G01J5/08 , G01J5/00
CPC分类号： G01J5/02 , A61B5/01 , A61B5/015 , G01J5/0025 , G01J5/025 , G01J5/08 , G01J5/0821 , G01J5/0837 , G01J5/0896 , G01J2005/0077
摘要： An electronic mirror and a method for displaying an image using the electronic mirror are provided. The electronic mirror may include a display unit, a detecting unit and a control unit. The detecting unit may receive a signal transmitted from the outside. The control unit may control the detecting unit and the display unit to display the signal received at the detecting unit on the display unit as an image. The image displayed on the display unit may be output from the electronic mirror through the detecting unit. The electronic mirror may further include a reflecting unit. A light from the outside may pass through the detecting unit and the display unit and then be reflected on the reflecting unit. The reflected light may be output from the electronic mirror through the display unit and the detecting unit.
摘要翻译：提供电子反射镜和使用电子反射镜显示图像的方法。电子反射镜可以包括显示单元，检测单元和控制单元。检测单元可以接收从外部发送的信号。控制单元可以控制检测单元和显示单元将显示单元上的检测单元接收的信号显示为图像。显示单元上显示的图像可以通过检测单元从电子反射镜输出。电子反射镜还可以包括反射单元。来自外部的光可以通过检测单元和显示单元，然后在反射单元上反射。反射光可以通过显示单元和检测单元从电子反射镜输出。

12. 发明申请

US20090252938A1 Substrate structure and method of forming the same 有权
标题翻译：底物结构及其形成方法
公开(公告)号：US20090252938A1
公开(公告)日：2009-10-08
申请号：US12222444
申请日：2008-08-08
申请人： Chan Wook Baik , Jong Seok Kim , Sun II Kim , Young Mok Son
发明人： Chan Wook Baik , Jong Seok Kim , Sun II Kim , Young Mok Son
IPC分类号： B32B3/10 , B05D5/12
CPC分类号： C23C14/16 , C23C14/022 , C23C14/5806 , H01L21/30655 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.
摘要翻译：提供一种基板结构及其形成方法。形成衬底结构的方法可以包括蚀刻衬底以形成具有垂直表面的蚀刻部分，在整个衬底或衬底的一部分中形成扩散材料层; 使扩散材料层退火，形成向蚀刻部分的表面向下扩散的晶种层，并在籽晶层上形成金属层。因此，可以通过晶种层增强基板的蚀刻部分的表面特性，因此，可以在蚀刻部分的垂直表面上形成具有改善的粘附性和均匀厚度的金属层。

13. 发明授权

US08288082B2 Method of fabricating triode-structure field-emission device 有权
标题翻译：制造三极管结构场致发射器件的方法
公开(公告)号：US08288082B2
公开(公告)日：2012-10-16
申请号：US12292027
申请日：2008-11-10
申请人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
发明人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
IPC分类号： G03F7/11
CPC分类号： H01J31/127 , H01J29/04 , H01J2329/0455
摘要： Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
摘要翻译：示例性实施例提供了制造三极管结构场致发射器件的方法。可以在基板上依次形成阴极，绝缘层和栅极金属层。可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案，以依次层压在栅极金属层上。然后，可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层，以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。在第一抗蚀剂图案，第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后，可以在第二孔中的催化剂层上形成发射极。

14. 发明申请

US20090233240A1 Method of fabricating Triode-Structure field-emission device 有权
标题翻译：三极管结构场致发射器件的制造方法
公开(公告)号：US20090233240A1
公开(公告)日：2009-09-17
申请号：US12292027
申请日：2008-11-10
申请人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
发明人： Chan Wook Baik , Junhee Choi , Seog Woo Hong , Joo Ho Lee
IPC分类号： G03F7/20
CPC分类号： H01J31/127 , H01J29/04 , H01J2329/0455
摘要： Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
摘要翻译：示例性实施例提供了制造三极管结构场致发射器件的方法。可以在基板上依次形成阴极，绝缘层和栅极金属层。可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案，以依次层压在栅极金属层上。然后，可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层，以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。在第一抗蚀剂图案，第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后，可以在第二孔中的催化剂层上形成发射极。

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