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    • 11. 发明授权
    • Handoff of a mobile station between packet-switched and circuit-switched wireless domains
    • 分组交换和电路交换无线域之间的移动台的切换
    • US08320334B2
    • 2012-11-27
    • US12831496
    • 2010-07-07
    • Michael ThomasSaso StojanovskiEric Parsons
    • Michael ThomasSaso StojanovskiEric Parsons
    • H04W4/00H04W36/00H04L12/66H04L12/56
    • H04W36/0022H04L65/1016H04L65/103H04L65/1053H04W88/06
    • A first mobility management entity associated with a packet-switched wireless access network receives information associated with a mobile station being served by the first mobility management entity, where the information identifies a serving generic access network controller for the mobile station. The serving generic access network controller is used to provide a circuit-switched service to the mobile station while the mobile station is attached to the packet-switched wireless access network. The first mobility management entity initiates a handoff of the mobile station from the packet-switched wireless access network to a circuit-switched wireless access network, where the circuit-switched wireless access network is in a region served by a second generic access network controller different from the serving generic access network controller. In performing the handoff, the first mobility management entity uses the information to identify the serving generic access network controller to communicate handoff-related messaging to the serving generic access network controller to cause provision of the circuit-switched service to be handed off from the serving generic access network controller to the second generic access network controller.
    • 与分组交换无线接入网络相关联的第一移动性管理实体接收与由第一移动性管理实体服务的移动台相关联的信息,其中该信息标识用于移动台的服务通用接入网络控制器。 服务通用接入网络控制器用于在移动站附接到分组交换无线接入网络时向移动站提供电路交换业务。 第一移动性管理实体发起移动站从分组交换无线接入网络切换到电路交换无线接入网络,其中电路交换无线接入网络在由第二通用接入网络控制器不同服务的区域中 从服务通用接入网络控制器。 在执行越区切换时,第一移动性管理实体使用该信息来识别服务通用接入网络控制器,以将切换相关的消息传递到服务通用接入网络控制器,以使电路交换服务的提供从服务 通用接入网络控制器到第二个通用接入网络控制器。
    • 12. 发明申请
    • DEVICE AND METHOD FOR MICROSTRUCTURED PLASMA TREATMENT
    • 用于微结构等离子体处理的装置和方法
    • US20110259730A1
    • 2011-10-27
    • US12996824
    • 2009-06-09
    • Michael ThomasClaus-Peter KlagesAntje Zanker
    • Michael ThomasClaus-Peter KlagesAntje Zanker
    • B01J19/08
    • B29C59/14B29C2059/023H05H1/2406H05H2001/2431
    • The invention relates to a device for the microstructured plasma treatment of a film substrate, especially of a plastic film Said device comprises a rotatably received cylindrical electrode the surface of which contains or consists of metal, especially chromium, the surface having microstructured depressions, a planar high-voltage electrode the surface of which has a shape complementary to that of the cylindrical electrode and can be arranged on a section of the surface of the cylindrical electrode in a substantially form-fit manner, a transport device for transporting the film substrate to be treated between the surface of the cylindrical electrode and the high-voltage electrode, and a device for feeding a process gas to the surface of the cylindrical electrode and to the interspace between the cylindrical electrode and the high-voltage electrode.
    • 本发明涉及一种用于薄膜基材,特别是塑料薄膜的微结构等离子体处理的装置。所述装置包括可旋转接收的圆柱形电极,其表面包含金属,特别是铬,具有微结构凹陷的表面,平面 其表面具有与圆柱形电极的形状互补的形状的高电压电极,并且可以基本形状配置在圆柱形电极的表面的一部分上,用于输送膜基材的输送装置为 在圆柱形电极的表面和高压电极之间进行处理,以及用于将工艺气体供给到圆柱形电极的表面以及圆柱形电极和高压电极之间的间隙的装置。
    • 13. 发明授权
    • Repair and restoration of damaged dielectric materials and films
    • 损坏的介质材料和薄膜的修复和修复
    • US07915181B2
    • 2011-03-29
    • US10543347
    • 2004-01-26
    • Wenya FanVictor LuMichael ThomasBrian DanielsTiffany NguyenDe-Ling ZhouAnanth NamanLei JinAnil Bhanap
    • Wenya FanVictor LuMichael ThomasBrian DanielsTiffany NguyenDe-Ling ZhouAnanth NamanLei JinAnil Bhanap
    • H01L21/31
    • H01L21/31058H01L21/3105H01L21/76801H01L2924/0002H01L2924/00
    • Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
    • 本文描述了修复材料中空隙的方法,其包括:a)提供具有多个反应性硅烷醇基团的材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法,其包括:a)提供具有多个反应性硅烷醇基团的缺碳材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外,本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法,其包括:a)提供具有多个反应性硅烷醇基团的膜; b)将膜放入等离子体室中; c)将多个含反应性有机部分的硅烷引入所述室中; 和d)允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述,其包括:a)具有多个硅原子的无机材料; 和b)多个含有机部分的硅烷化合物,其中硅烷化合物通过至少一些硅原子与无机材料偶联。