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    • 11. 发明申请
    • Organic semiconductor device and method for manufacturing the same
    • 有机半导体器件及其制造方法
    • US20050012094A1
    • 2005-01-20
    • US10918873
    • 2004-08-16
    • Byoung-Choo Park
    • Byoung-Choo Park
    • H05B33/10H01L27/32H01L51/50H01L51/56H05B33/12H05B33/22H01L21/00H01L33/00
    • H01L51/0009H01L27/3295H01L51/56
    • A method for manufacturing an organic semiconductor device including an organic electro-luminescent device composed of a plurality of pixels, which display high quality image information. Insulating film patterns composed of insulating materials having a lower optical damage threshold than the optical damage threshold of a substrate are formed between pixel elements on the substrate. Organic layers including a light-emitting organic layer and electrodes are formed on the substrate where the insulating films are formed. Focused laser beams are irradiated to entirely remove the organic layers and electrode materials formed on the insulating film patterns and remove the insulating film patterns partially or entirely in view of thickness and, thereby forming a plurality of pixels. The optical damage process using laser beam irradiation is performed under the vacuum, or non-moisture and non-oxygen inert gas flows, to prevent the devices from being contaminated by residual products.
    • 一种用于制造包括显示高质量图像信息的由多个像素组成的有机电致发光器件的有机半导体器件的方法。 在基板上的像素元件之间形成由具有比基板的光学损伤阈值低的光学损伤阈值的绝缘材料构成的绝缘膜图案。 在形成有绝缘膜的基板上形成包含发光有机层和电极的有机层。 照射聚焦的激光束以完全去除形成在绝缘膜图案上的有机层和电极材料,并且从厚度方面部分或全部去除绝缘膜图案,从而形成多个像素。 使用激光束照射的光学损伤过程在真空或非水分和非氧惰性气体流下进行,以防止装置被残留产物污染。