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    • 11. 发明申请
    • ALPHA-AMYLASE VARIANTS WITH ALTERED PROPERTIES
    • 具有改性性质的ALPHA-AMYLASE变体
    • US20110269210A1
    • 2011-11-03
    • US13151905
    • 2011-06-02
    • Mee-Young Yoon
    • Mee-Young Yoon
    • D06M16/00C12N9/26C11D3/60C12N9/20C12N9/18C12N9/96C12N9/02
    • C11D3/38681C11D3/386C12N9/2417D06M16/003
    • Disclosed are compositions comprising variants of alpha-amylase that have alpha-amylase activity and that exhibit altered properties relative to a parent AmyS-like alpha-amylase from which they are derived. The compositions generally comprise at least one of an additional enzyme, a detergent,.a surfactant, a chelator, an oxidizing agent, an acidulant, an alkalizing agent, a source of peroxide, a source of hardness, a salt, a detergent complexing agent, a polymer, a stabilizing agent, or a fabric conditioner. Also disclosed are detergent formulations comprising the variants. Methods of using the compositions for desizing woven material and washing or cleaning items, such as dishes or laundry, are disclosed. Kits related thereto are also provided.
    • 公开了包含α-淀粉酶变体的组合物,其具有α-淀粉酶活性,并且相对于其来源的亲本AmyS样α-淀粉酶表现出改变的性质。 组合物通常包含另外的酶,洗涤剂,表面活性剂,螯合剂,氧化剂,酸化剂,碱化剂,过氧化物源,硬度源,盐,洗涤剂络合剂中的至少一种 ,聚合物,稳定剂或织物调理剂。 还公开了包含这些变体的洗涤剂制剂。 公开了将组合物用于脱浆织物和洗涤或清洁物品如餐具或衣物的方法。 还提供了与之相关的试剂盒。
    • 13. 发明申请
    • ALPHA-AMYLASE VARIANTS WITH ALTERED PROPERTIES
    • 具有改性性质的ALPHA-AMYLASE变体
    • US20090209026A1
    • 2009-08-20
    • US12263958
    • 2008-11-03
    • Mee-Young Yoon
    • Mee-Young Yoon
    • D06M16/00
    • C11D3/38681C11D3/386C12N9/2417D06M16/003
    • Disclosed are compositions comprising variants of alpha-amylase that have alpha-amylase activity and that exhibit altered properties relative to a parent AmyS-like alpha-amylase from which they are derived. The compositions generally comprise at least one of an additional enzyme, a detergent, a surfactant, a chelator, an oxidizing agent, an acidulant, an alkalizing agent, a source of peroxide, a source of hardness, a salt, a detergent complexing agent, a polymer, a stabilizing agent, or a fabric conditioner. Also disclosed are detergent formulations comprising the variants. Methods of using the compositions for desizing woven material and washing or cleaning items, such as dishes or laundry, are disclosed. Kits related thereto are also provided.
    • 公开了包含α-淀粉酶变体的组合物,其具有α-淀粉酶活性并且相对于它们来源的亲本AmyS样α-淀粉酶表现出改变的性质。 组合物通常包含另外的酶,洗涤剂,表面活性剂,螯合剂,氧化剂,酸化剂,碱化剂,过氧化物源,硬度源,盐,洗涤剂络合剂, 聚合物,稳定剂或织物调理剂。 还公开了包含这些变体的洗涤剂制剂。 公开了将组合物用于脱浆织物和洗涤或清洁物品如餐具或衣物的方法。 还提供了与之相关的试剂盒。
    • 15. 发明授权
    • Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer
    • 使用界面控制层来改善金属互连层的半导体器件制造方法
    • US06358829B2
    • 2002-03-19
    • US09397616
    • 1999-09-16
    • Mee-Young YoonSang-In LeeHyun-Seok Lim
    • Mee-Young YoonSang-In LeeHyun-Seok Lim
    • H01L2144
    • H01L21/76876H01L21/28562H01L21/76843H01L21/76846H01L21/76856H01L21/76877
    • A method for fabricating a semiconductor device having an aluminum (Al) interconnection layer with excellent surface morphology forms an interface control layer having a plurality of atomic layers before forming the Al interconnection layer. In the fabrication method, an interlayer dielectric (ILD) film having a contact hole which exposes a conductive region of the semiconductor substrate is formed on a semiconductor substrate, and an interface control layer having a plurality of atomic layers continuously deposited is formed on the inner wall of the contact hole and the upper surface of the interlayer dielectric film, to a thickness on the order of several angstroms to several tens of angstroms. Then, chemical vapor deposition (CVD) completes an Al blanket deposition on the resultant structure, including the interface control layer, to form a contact plug in the contact hole and an interconnection layer on the interlayer dielectric film.
    • 具有优异表面形态的具有铝(Al)互连层的半导体器件的制造方法在形成Al互连层之前形成具有多个原子层的界面控制层。 在制造方法中,在半导体衬底上形成具有暴露半导体衬底的导电区域的接触孔的层间电介质(ILD)膜,并且在内部形成具有连续沉积的多个原子层的界面控制层 接触孔的壁和层间电介质膜的上表面的厚度达到几埃到几十埃的数量级。 然后,化学气相沉积(CVD)在所得结构(包括界面控制层)上完成Al覆盖层沉积,以形成接触孔中的接触塞和层间电介质膜上的互连层。