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11. 发明授权

US07554074B2 Image sensor for low-noise voltage operation 有权
标题翻译：用于低噪声电压操作的图像传感器
公开(公告)号：US07554074B2
公开(公告)日：2009-06-30
申请号：US11866698
申请日：2007-10-03
申请人： Bong Ki Mheen , Min Hyung Cho , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Min Hyung Cho , Mi Jin Kim , Young Joo Song
IPC分类号： H03F3/08 , H01L27/00 , H04N3/14
CPC分类号： H04N5/3745 , H01L27/14603 , H01L27/14609 , H04N5/361
摘要： An image sensor operated in a pseudo pinch-off condition capable of reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels is presented. The image sensor has a photosensitive pixel, a driving circuit and an intermediary circuit. The photosensitive pixel can have a photodiode generating a photoelectrons, a transfer transistor transferring the photoelectrons to a diffusion node, and a reset transistor resetting the diffusion node. The driving circuit generates a driving switching signal with respect to the transfer and resist transistors. The intermediary circuit changes characteristics of the signal to drive the photosensitive pixel in a pseudo pinch-off mode.
摘要翻译：提供了一种以能够减少光电二极管的复位电压并且减少由于像素之间的特性不一致而产生的暗电流和固定图案噪声的伪夹断条件操作的图像传感器。图像传感器具有光敏像素，驱动电路和中间电路。感光像素可以具有产生光电子的光电二极管，将光电子传输到扩散节点的转移晶体管以及复位扩散节点的复位晶体管。驱动电路相对于转移和抗蚀剂晶体管产生驱动切换信号。中间电路改变信号的特性以在伪夹断模式下驱动光敏像素。

12. 发明申请

US20080111170A1 LOW-VOLTAGE IMAGE SENSOR AND SENSING METHOD THEREOF 有权
标题翻译：低电压图像传感器及其感应方法
公开(公告)号：US20080111170A1
公开(公告)日：2008-05-15
申请号：US11932922
申请日：2007-10-31
申请人： Mi Jin KIM , Bong Ki Mheen , Young Joo Song , Seong Su Park
发明人： Mi Jin KIM , Bong Ki Mheen , Young Joo Song , Seong Su Park
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H04N5/235 , H04N5/3559 , H04N5/3597 , H04N5/374
摘要： Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.
摘要翻译：提供了一种图像传感器及其感测方法。图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量接收设备。

13. 发明授权

US07906753B2 Image sensor and method of driving transfer transistor of image sensor 有权
公开(公告)号：US07906753B2
公开(公告)日：2011-03-15
申请号：US12630081
申请日：2009-12-03
申请人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
IPC分类号： H01L31/062 , H04N5/335
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

14. 发明授权

US07671315B2 Image sensor and method of driving transfer transistor of image sensor 有权
标题翻译：图像传感器和驱动图像传感器传输晶体管的方法
公开(公告)号：US07671315B2
公开(公告)日：2010-03-02
申请号：US11635174
申请日：2006-12-07
申请人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
IPC分类号： H01L31/062 , H04N5/335
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
摘要翻译：提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声由转移晶体管的操作条件的变化和像素间特性差异引起。图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压转移晶体管使得转移晶体管以伪夹断模式工作。

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