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11. 发明授权

US09157416B2 Direct-drive electric machine configured with a plural-module combination structure 有权
标题翻译：配置有多模组合结构的直驱电机
公开(公告)号：US09157416B2
公开(公告)日：2015-10-13
申请号：US13496807
申请日：2010-09-15
申请人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
发明人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
IPC分类号： H02K21/12 , H02K1/27 , F03D9/00 , H02K7/18 , H02K21/24 , H02K41/03
CPC分类号： F03D9/25 , F03D15/20 , F03D80/70 , F05B2220/7066 , H02K7/1838 , H02K7/1869 , H02K21/12 , H02K21/24 , H02K41/031 , H02K2201/12 , H02K2201/15 , H02K2213/12 , Y02E10/725 , Y02P70/523
摘要： The present invention provides a direct-drive electric machine such as a generator and a motor comprising a rotor or a mover and a stator. The direct-drive electric machine is configured with a plural-module combination structure in which the rotor or the mover and the stator are mutually combined such that a plurality of modules form one phase, respectively.
摘要翻译：本发明提供了一种直接驱动电机，例如发电机和包括转子，动子和定子的电动机。直驱电机具有多模组合结构，其中转子或动子和定子相互组合，使得多个模块分别形成一相。

12. 发明申请

US20120228965A1 DIRECT-DRIVE ELECTRIC MACHINE 有权
标题翻译：直驱电机
公开(公告)号：US20120228965A1
公开(公告)日：2012-09-13
申请号：US13496807
申请日：2010-09-15
申请人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
发明人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
IPC分类号： H02K21/24 , H02K41/03
CPC分类号： F03D9/25 , F03D15/20 , F03D80/70 , F05B2220/7066 , H02K7/1838 , H02K7/1869 , H02K21/12 , H02K21/24 , H02K41/031 , H02K2201/12 , H02K2201/15 , H02K2213/12 , Y02E10/725 , Y02P70/523
摘要： The present invention provides a direct-drive electric machine such as a generator and a motor comprising a rotor or a mover and a stator. The direct-drive electric machine is configured with a plural-module combination structure in which the rotor or the mover and the stator are mutually combined such that a plurality of modules form one phase, respectively.
摘要翻译：本发明提供了一种直接驱动电机，例如发电机和包括转子，动子和定子的电动机。直驱电机具有多模组合结构，其中转子或动子和定子相互组合，使得多个模块分别形成一相。

13. 发明申请

US20110254613A1 VARIABLE GATE FIELD-EFFECT TRANSISTOR AND ELECTRICAL AND ELECTRONIC APPARATUS INCLUDING THE SAME 有权
标题翻译：可变闸门场效应晶体管及其电子和电子设备
公开(公告)号：US20110254613A1
公开(公告)日：2011-10-20
申请号：US13089244
申请日：2011-04-18
申请人： Hyun Tak KIM , Bong Jun Kim
发明人： Hyun Tak KIM , Bong Jun Kim
IPC分类号： H03K17/78
CPC分类号： H01L27/0629 , H01L25/16 , H01L27/0248 , H01L49/003 , H01L2924/0002 , H03K17/145 , H01L2924/00
摘要： Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
摘要翻译：提供了一种可变场效应晶体管（FET），其设计成在降低FET的温度的同时抑制源极和漏极之间的电流的降低，以及包括可变栅极FET的电气和电子设备。可变栅极FET包括FET和栅极控制装置，其连接到FET的表面或发热部分，并连接到FET的栅极端子，以便改变栅极端子的电压。源极和漏极之间的沟道电流由栅极控制器控制，栅极控制器件当FET的温度升高到高于预定温度时改变栅极端子的电压。

14. 发明授权

US07781865B2 MIM capacitor and metal interconnection 有权
标题翻译： MIM电容和金属互连
公开(公告)号：US07781865B2
公开(公告)日：2010-08-24
申请号：US12476923
申请日：2009-06-02
申请人： Bong Jun Kim
发明人： Bong Jun Kim
IPC分类号： H01L29/00
CPC分类号： H01L21/76852
摘要： Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer on the insulating layer; an interlayer dielectric layer having a via hole on the lower metal interconnection; and a plug in the via hole.
摘要翻译：金属 - 绝缘体 - 金属电容器及其制造方法公开了一种MIM（金属 - 绝缘体 - 金属）电容器。 MIM电容器包括：在基板上的下金属层和下金属互连; 下金属层上的阻挡金属层; 阻挡金属层上的绝缘层; 绝缘层上的上金属层; 在下金属互连上具有通孔的层间绝缘层; 并插入通孔。

15. 发明授权

US07489492B2 Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit 有权
标题翻译：突然的金属 - 绝缘体转换装置，用于使用突然的金属 - 绝缘体转换装置去除高压噪声的电路，以及包括该电路的电和/或电子系统
公开(公告)号：US07489492B2
公开(公告)日：2009-02-10
申请号：US12021764
申请日：2008-01-29
申请人： Hyun Tak Kim , Kwang Yong Kang , Bong Jun Kim , Yong Wook Lee , Sun Jin Yun , Byung Gyu Chae , Gyung Ock Kim
发明人： Hyun Tak Kim , Kwang Yong Kang , Bong Jun Kim , Yong Wook Lee , Sun Jin Yun , Byung Gyu Chae , Gyung Ock Kim
IPC分类号： H02H3/22 , H02H9/04
CPC分类号： H01L49/003
摘要： Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
摘要翻译：提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。第一和第二突变MIT结构分别形成在基板的上表面和下表面上。高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

16. 发明申请

US20090011145A1 Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
标题翻译：制造氧化钒薄膜的方法
公开(公告)号：US20090011145A1
公开(公告)日：2009-01-08
申请号：US12064807
申请日：2006-08-23
申请人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
发明人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/50
摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.
摘要翻译：提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

17. 发明申请

US20070148906A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070148906A1
公开(公告)日：2007-06-28
申请号：US11616820
申请日：2006-12-27
申请人： Bong Jun Kim
发明人： Bong Jun Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L21/76224 , H01L29/78
摘要： Embodiments relate to a semiconductor device and a method for fabricating a semiconductor device. In embodiments, the method may include forming a gate dielectric layer on an active region of a semiconductor substrate defined by an isolation region to form a gate conductive layer pattern, etching the isolation region of the semiconductor substrate where the gate conductive layer pattern is formed, to form an isolation trench, forming a polyoxide layer on the gate conductive layer pattern and a sidewall oxide layer in the trench by carrying out an oxidation process, forming a spacer nitride layer on the polyoxide layer and a liner nitride layer on the sidewall oxide layer by carrying out a nitride layer forming process, and forming a dielectric layer on an entire surface of the resultant structure to fill the trench.
摘要翻译：实施例涉及半导体器件和制造半导体器件的方法。在实施例中，该方法可以包括在由隔离区域限定的半导体衬底的有源区上形成栅极电介质层以形成栅极导电层图案，蚀刻形成栅极导电层图案的半导体衬底的隔离区域，以形成隔离沟槽，通过进行氧化工艺在栅极导电层图案和沟槽中的侧壁氧化物层形成多环氧化物层，在多孔层上形成间隔氮化物层，在侧壁氧化物层上形成衬里氮化物层通过进行氮化物层形成工艺，并在所得结构的整个表面上形成电介质层以填充沟槽。

18. 发明授权

US06896910B2 Anti-fatigue and tonic agent containing wild ginseng 失效
标题翻译：含有野参的抗疲劳和滋补剂
公开(公告)号：US06896910B2
公开(公告)日：2005-05-24
申请号：US10055344
申请日：2002-01-25
申请人： Won Kyu Kim , Kye Won Lee , Sun Jung Lee , Bong Jun Kim , Hye Young Lee , Chul Hong Park , Dong Soo Kim , Kyeong Bum Choi , Eun Joung Yoo
发明人： Won Kyu Kim , Kye Won Lee , Sun Jung Lee , Bong Jun Kim , Hye Young Lee , Chul Hong Park , Dong Soo Kim , Kyeong Bum Choi , Eun Joung Yoo
IPC分类号： A61K36/258 , A61K35/20 , A61K35/64 , A61P1/14 , A01K35/78
CPC分类号： A61K36/11 , A61K36/068 , A61K36/232 , A61K36/234 , A61K36/254 , A61K36/258 , A61K36/284 , A61K36/296 , A61K36/342 , A61K36/344 , A61K36/46 , A61K36/481 , A61K36/484 , A61K36/65 , A61K36/704 , A61K36/725 , A61K36/746 , A61K36/804 , A61K36/815 , A61K36/8945 , A61K36/896 , A61K36/8965 , A61K36/8969 , A61K36/9064 , A61K2300/00
摘要： Disclosed is an anti-fatigue and nutritious tonic agent containing powder of wild ginseng, optionally in admixture with a herb medicine, or water extract of the powder, which has remarkably enhanced anti-fatigue, and nutrition and tonic effects as compared with agents containing cultivated ginseng.
摘要翻译：本发明涉及含有野山参粉末的抗疲劳和营养滋补剂，任选地与草药混合，或粉末的水提取物，与含有栽培物质的试剂相比，具有显着增强的抗疲劳性，营养和滋补作用参。

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