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11. 发明申请

US20070175865A1 PROCESS FOR THE FABRICATION OF AN INERTIAL SENSOR WITH FAILURE THRESHOLD 有权
标题翻译：具有故障阈值的惯性传感器的制造工艺
公开(公告)号：US20070175865A1
公开(公告)日：2007-08-02
申请号：US11566590
申请日：2006-12-04
申请人： Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
发明人： Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
IPC分类号： C23F1/00
CPC分类号： H01H1/0036 , G01P1/023 , G01P15/06 , G01P15/0802 , G01P15/0891 , G01P15/18 , G01P2015/0814 , H01H35/146
摘要： A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
摘要翻译：用于制造具有故障阈值的惯性传感器的方法包括在半导体晶片的衬底的顶部上形成嵌入在牺牲区域中的样品元件的步骤，所述样品元件构造成在预选应变下断裂。该方法还包括在牺牲区域的顶部上形成连接到样品元件的主体并蚀刻牺牲区域以释放身体和样品元件。该方法还可以包括在基底上形成连接到身体的附加样品元件。

12. 发明授权

US06928872B2 Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane 有权
标题翻译：半导体材料的集成陀螺仪在传感器平面内具有至少一个敏感轴
公开(公告)号：US06928872B2
公开(公告)日：2005-08-16
申请号：US10443647
申请日：2003-05-21
申请人： Guido Spinola Durante , Sarah Zerbini , Angelo Merassi
发明人： Guido Spinola Durante , Sarah Zerbini , Angelo Merassi
IPC分类号： G01C19/5719 , G01C19/00 , G01P3/44 , G01P9/00 , G01P15/08 , G01P15/125
CPC分类号： G01C19/5719
摘要： An integrated gyroscope, including an acceleration sensor formed by: a driving assembly; a sensitive mass extending in at least one first and second directions and being moved by the driving assembly in the first direction; and by a capacitive sensing electrode, facing the sensitive mass. The acceleration sensor has an rotation axis parallel to the second direction, and the sensitive mass is sensitive to forces acting in a third direction perpendicular to the other directions. The capacitive sensing electrode is formed by a conductive material region extending underneath the sensitive mass and spaced therefrom by an air gap.
摘要翻译：一种集成陀螺仪，包括加速度传感器，该加速度传感器由以下部件构成：驱动组件; 在至少一个第一和第二方向上延伸并被驱动组件沿第一方向移动的敏感物质; 并通过电容式感测电极面对敏感质量。加速度传感器具有平行于第二方向的旋转轴，并且敏感质量对垂直于其它方向的第三方向作用的力敏感。电容感测电极由传导材料区域形成，导电材料区域延伸在敏感质量块的下方并与气隙隔开。

13. 发明授权

US07793544B2 Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
标题翻译：微机电惯性传感器，特别适用于自由落体检测应用
公开(公告)号：US07793544B2
公开(公告)日：2010-09-14
申请号：US11777702
申请日：2007-07-13
申请人： Angelo Merassi , Sarah Zerbini , Ernesto Lasalandra , Benedetto Vigna
发明人： Angelo Merassi , Sarah Zerbini , Ernesto Lasalandra , Benedetto Vigna
IPC分类号： G01P15/08
CPC分类号： G11B19/04 , G01P15/0891 , G01P15/125 , G01P15/18 , G01P2015/082
摘要： An inertial sensor provided with a detection structure sensitive to a first, a second and a third component of acceleration along respective directions of detection, and generating respective electrical quantities as a function of said components of acceleration. The detection structure supplies at output a resultant electrical quantity obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration acting on the inertial sensor, given by a vector sum of the components of acceleration. In particular, the detection structure is of a microelectromechanical type, and comprises a mobile portion made of semiconductor material forming with a fixed portion a first, a second and a third detection capacitor, and an electrical-interconnection portion, connecting the detection capacitors in parallel; the resultant electrical quantity being the capacitance obtained from said connection in parallel.
摘要翻译：一种惯性传感器，其具有对沿着检测方向的加速度的第一，第二和第三分量敏感的检测结构，并且产生作为所述加速度分量的函数的相应的电量。检测结构在输出时提供作为所述电量的组合获得的合成电量，并且与由加速度分量的矢量和给出的作用在惯性传感器上的合成加速度的值相关联。特别地，检测结构是微机电型的，并且包括由半导体材料制成的可移动部分，该半导体材料形成有固定部分，第一，第二和第三检测电容器以及并联连接检测电容器的电互连部分 ; 所得到的电量是从所述连接并联获得的电容。

14. 发明授权

US07520171B2 Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress 有权
标题翻译：微机电结构具有由热机械应力引起的热漂移的自补偿
公开(公告)号：US07520171B2
公开(公告)日：2009-04-21
申请号：US11226930
申请日：2005-09-14
申请人： Angelo Merassi , Sarah Zerbini , Benedetto Vigna
发明人： Angelo Merassi , Sarah Zerbini , Benedetto Vigna
IPC分类号： G01P15/125 , G01P3/00
CPC分类号： G01P15/125 , G01P2015/082
摘要： In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.
摘要翻译：在半导体材料的微机电结构中，通过定子和转子形成检测结构，转子在外部应力的存在下可相对移动，并受到热应力; 受到热应力和相对于外部应力不变的微机电类型的补偿结构连接到检测结构，由此微机电结构提供与外部应力相关并且被补偿的输出信号。

15. 发明授权

US06858810B2 Sensor with failure threshold 有权
标题翻译：传感器具有故障阈值
公开(公告)号：US06858810B2
公开(公告)日：2005-02-22
申请号：US10650452
申请日：2003-08-27
申请人： Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
发明人： Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
IPC分类号： B81B3/00 , G01P15/00 , G01P15/06 , G01P15/08 , G01P15/18 , H01H1/00 , H01H35/14 , H01L29/84
CPC分类号： G01P1/127 , G01P15/06 , G01P15/0802 , G01P15/0891 , G01P15/18 , G01P2015/0814 , H01H1/0036 , H01H35/146
摘要： An inertial sensor with failure threshold includes a first body and a second body, which can move relative to one another and are constrained by a plurality of elastic elements, and a sample element connected between the first body and the second body and shaped so as to be subjected to a stress when the second body is outside of a relative resting position with respect to the first body. The sample element has at least one weakened region. The sensor may also include additional sample elements connected between the first and second bodies.
摘要翻译：具有故障阈值的惯性传感器包括第一主体和第二主体，其可以相对于彼此移动并被多个弹性元件约束;以及样本元件，其连接在第一主体和第二主体之间，并且成形为当第二主体相对于第一主体位于相对静止位置之外时受到应力。样品元件具有至少一个弱化区域。传感器还可以包括连接在第一和第二主体之间的附加样本元件。

16. 发明授权

US07646582B2 Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
标题翻译：温度补偿微机电装置，以及微机电装置中的温度补偿方法
公开(公告)号：US07646582B2
公开(公告)日：2010-01-12
申请号：US11244439
申请日：2005-10-05
申请人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
发明人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC分类号： H01G5/00
CPC分类号： B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
摘要： A micro-electromechanical device includes a semiconductor body, in which at least one first microstructure and one second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the body so as to undergo equal strains as a result of thermal expansions of the body. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the body, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the body. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by thermal expansion can be compensated for.
摘要翻译：微机电装置包括半导体本体，其中集成了至少一个第一微结构和一个第二微结构。第一微结构和第二微结构被布置在体内，以便由于身体的热膨胀而产生相等的应变。此外，第一微结构相对于本体设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但相对于主体固定。通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀引起的第一微结构的电特性的变化。

17. 发明申请

US20080098815A1 Microelectromechanical sensor having multiple full-scale and sensitivity values 有权
标题翻译：具有多个满量程和灵敏度值的微机电传感器
公开(公告)号：US20080098815A1
公开(公告)日：2008-05-01
申请号：US11978056
申请日：2007-10-26
申请人： Angelo Merassi , Sarah Zerbini , Hubert Geitner , Marco Del Sarto
发明人： Angelo Merassi , Sarah Zerbini , Hubert Geitner , Marco Del Sarto
IPC分类号： G01P15/13
CPC分类号： G01P15/125 , G01P1/023 , G01P15/0891 , G01P2015/0814 , G01P2015/082 , G01P2015/0831
摘要： A microelectromechanical sensing structure is provided with a mobile element adapted to be displaced as a function of a quantity to be detected, and first fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element first detection conditions. The sensing structure is further provided with second fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element second detection conditions, which are different from the first detection conditions. In particular, the first and second detection conditions differ with respect to a full-scale or a sensitivity value in the detection of the aforesaid quantity.
摘要翻译：微机电感测结构设置有适于根据要检测的量移位的移动元件以及电容耦合到移动元件并被配置为利用移动元件实现第一检测条件的第一固定元件。感测结构还设置有电容耦合到移动元件的第二固定元件，并被配置为与第一检测条件不同的移动元件第二检测条件实现。特别地，第一和第二检测条件相对于检测上述量的满量程或灵敏度值而不同。

18. 发明申请

US20060086995A1 Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
标题翻译：温度补偿微机电装置，以及微机电装置中的温度补偿方法
公开(公告)号：US20060086995A1
公开(公告)日：2006-04-27
申请号：US11244439
申请日：2005-10-05
申请人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
发明人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC分类号： H01L29/84
CPC分类号： B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
摘要： A micro-electromechanical device includes a semiconductor body, in which at least one first microstructure and one second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the body so as to undergo equal strains as a result of thermal expansions of the body. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the body, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the body. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by thermal expansion can be compensated for.
摘要翻译：微机电装置包括半导体本体，其中集成了至少一个第一微结构和一个第二参考微结构。第一微结构和第二微结构布置在体内，以便由于身体的热膨胀而产生相等的应变。此外，第一微结构相对于本体设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但相对于主体固定。通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀引起的第一微结构的电特性的变化。

19. 发明授权

US08124895B2 Planar microelectromechanical device having a stopper structure for out-of-plane movements 有权
标题翻译：具有用于平面外运动的止动结构的平面微机电装置
公开(公告)号：US08124895B2
公开(公告)日：2012-02-28
申请号：US12359556
申请日：2009-01-26
申请人： Angelo Merassi , Mario Francesco Cortese , Viola Fulvio , Barbara Simoni , Andrea Rusconi Clerici Beltrami
发明人： Angelo Merassi , Mario Francesco Cortese , Viola Fulvio , Barbara Simoni , Andrea Rusconi Clerici Beltrami
IPC分类号： H01H35/14
CPC分类号： B81B3/0051 , B81B2201/0235 , B81B2201/0242 , G01P15/08 , G01P15/125 , G01P2015/0828
摘要： A microelectromechanical device has a mobile mass that undergoes a movement, in particular a spurious movement, in a first direction in response to an external event; the device moreover has a stopper structure configured so as to stop said spurious movement. In particular, a stopper element is fixedly coupled to the mobile mass and is configured so as to abut against a stopper mass in response to the spurious movement, thereby stopping it. In detail, the stopper element is arranged on the opposite side of the stopper mass with respect to a direction of the spurious movement, protrudes from the space occupied by the mobile mass and extends in the space occupied by the stopper mass, in the first direction.
摘要翻译：微机电装置具有响应于外部事件在第一方向上经历移动，特别是杂散运动的移动质量; 该装置还具有阻止结构，以便停止所述杂散运动。特别地，止动元件固定地联接到移动块上，并被配置为响应于伪运动而抵靠止动块，从而停止它。详细地说，止动件相对于杂散运动的方向设置在止动块的相对侧上，从移动体所占据的空间突出，并且在第一方向上在止动块所占据的空间中延伸。

20. 发明申请

US20090194397A1 PLANAR MICROELECTROMECHANICAL DEVICE HAVING A STOPPER STRUCTURE FOR OUT-OF-PLANE MOVEMENTS 有权
标题翻译：具有非平面运动停止结构的平面微电子设备
公开(公告)号：US20090194397A1
公开(公告)日：2009-08-06
申请号：US12359556
申请日：2009-01-26
申请人： Angelo Merassi , Mario Francesco Cortese , Fultio Viola , Barbara Simoni , Andrea Rusconi Clerici Beltrami
发明人： Angelo Merassi , Mario Francesco Cortese , Fultio Viola , Barbara Simoni , Andrea Rusconi Clerici Beltrami
IPC分类号： H01H35/14
CPC分类号： B81B3/0051 , B81B2201/0235 , B81B2201/0242 , G01P15/08 , G01P15/125 , G01P2015/0828
摘要： A microelectromechanical device has a mobile mass that undergoes a movement, in particular a spurious movement, in a first direction in response to an external event; the device moreover has a stopper structure configured so as to stop said spurious movement. In particular, a stopper element is fixedly coupled to the mobile mass and is configured so as to abut against a stopper mass in response to the spurious movement, thereby stopping it. In detail, the stopper element is arranged on the opposite side of the stopper mass with respect to a direction of the spurious movement, protrudes from the space occupied by the mobile mass and extends in the space occupied by the stopper mass, in the first direction.
摘要翻译：微机电装置具有响应于外部事件在第一方向上经历移动，特别是杂散运动的移动质量; 该装置还具有阻止结构，以便停止所述杂散运动。特别地，止动元件固定地联接到移动块上，并被配置为响应于伪运动而抵靠止动块，从而停止它。详细地说，止动件相对于杂散运动的方向设置在止动块的相对侧上，从移动体所占据的空间突出，并且在第一方向上在止动块所占据的空间中延伸。

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