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11. 发明授权

US08299391B2 Field enhanced inductively coupled plasma (Fe-ICP) reactor 有权
标题翻译：场增强电感耦合等离子体（Fe-ICP）反应器
公开(公告)号：US08299391B2
公开(公告)日：2012-10-30
申请号：US12182342
申请日：2008-07-30
申请人： Valentin N. Todorow , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
发明人： Valentin N. Todorow , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321
摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.
摘要翻译：本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中，或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

12. 发明申请

US20100025384A1 FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR 有权
标题翻译：现场增强电感耦合等离子体（FE-ICP）反应器
公开(公告)号：US20100025384A1
公开(公告)日：2010-02-04
申请号：US12182342
申请日：2008-07-30
申请人： VALENTIN N. TODOROW , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
发明人： VALENTIN N. TODOROW , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
IPC分类号： B23K9/02 , B23K9/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321
摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.
摘要翻译：本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中，或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

13. 发明申请

US20080179287A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH WAFER FRONT SIDE GAS PURGE 审中-公开
标题翻译：使用WAFER FRONT GIDE PURGE去除后置聚合物的方法
公开(公告)号：US20080179287A1
公开(公告)日：2008-07-31
申请号：US11685766
申请日：2007-03-14
申请人： Kenneth S. Collins , Hirojii Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hirojii Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/0209 , H01L21/02063 , H01L21/31138
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone.
摘要翻译：提供了从工件的背面除去聚合物的方法。该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。气体流动被限制在工件的边缘处的工件边缘的间隙内，该间隙构造成约为室直径的约1％，间隙限定了含有前侧和一个含有背面的下部工艺区。该方法进一步包括排空下部工艺区域，从聚合物蚀刻前体气体在外部室中产生等离子体，以及将副产物从等离子体引入下部工艺区域。该方法还包括将净化气体泵入上部工艺区域以从上部工艺区域去除聚合物蚀刻物质。

14. 发明授权

US07767561B2 Plasma immersion ion implantation reactor having an ion shower grid 失效
标题翻译：具有离子喷淋格栅的等离子体浸没离子注入反应器
公开(公告)号：US07767561B2
公开(公告)日：2010-08-03
申请号：US10896113
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32357 , H01L21/2236 , H01L21/31612
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
摘要翻译：用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域，具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

15. 发明授权

US07642180B2 Semiconductor on insulator vertical transistor fabrication and doping process 有权
标题翻译：半导体绝缘体垂直晶体管的制造和掺杂过程
公开(公告)号：US07642180B2
公开(公告)日：2010-01-05
申请号：US11901969
申请日：2007-09-18
申请人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01J37/321 , H01L29/66795 , H01L29/66803 , H01L29/7843 , H01L29/785 , H01L29/78618
摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
摘要翻译：通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积然后可以加热以将掺杂剂驱动到晶体管中。一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

16. 发明申请

US20080179181A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH VARIABLE HEIGHT GROUND RETURN PATH TO CONTROL PLASMA ION DENSITY UNIFORMITY 有权
标题翻译：在具有可变高度接地返回路径的等离子体反应器中处理工件的方法来控制等离子体密度均匀性
公开(公告)号：US20080179181A1
公开(公告)日：2008-07-31
申请号：US11733984
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H05H1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要翻译：用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极工件支撑电极为频率f 1。该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

17. 发明申请

US20080179008A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING AN ETCH PLASMA FEEDING A LOWER PROCESS ZONE AND A SCAVENGER PLASMA FEEDING AN UPPER PROCESS ZONE 审中-公开
标题翻译：使用等离子体等离子体进行离散聚合物的反应器下一个工艺区域和SCAVENGER等离子体进料上一个工艺区域
公开(公告)号：US20080179008A1
公开(公告)日：2008-07-31
申请号：US11685772
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： H01L21/306
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。支撑装置离开被暴露的工件的背面的至少一个环形周边。约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界。真空泵联接到下部处理区。较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

18. 发明申请

US20080044960A1 Semiconductor on insulator vertical transistor fabrication and doping process 有权
标题翻译：半导体绝缘体垂直晶体管的制造和掺杂过程
公开(公告)号：US20080044960A1
公开(公告)日：2008-02-21
申请号：US11901969
申请日：2007-09-18
申请人： Amir Al-Bayati , Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/84
CPC分类号： H01J37/321 , H01L29/66795 , H01L29/66803 , H01L29/7843 , H01L29/785 , H01L29/78618
摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
摘要翻译：通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积然后可以加热以将掺杂剂驱动到晶体管中。一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

19. 发明授权

US07320734B2 Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：等离子体浸没离子注入系统，其包括具有低解离和低最小等离子体电压的等离子体源
公开(公告)号：US07320734B2
公开(公告)日：2008-01-22
申请号：US10646527
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321
摘要： A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.
摘要翻译：一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽路径延伸穿过管道并跨越过程区域。反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体在房间里该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

20. 发明授权

US07312148B2 Copper barrier reflow process employing high speed optical annealing 失效
标题翻译：铜屏障回流工艺采用高速光学退火
公开(公告)号：US07312148B2
公开(公告)日：2007-12-25
申请号：US11199570
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76864 , H01L21/76873
摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.
摘要翻译：在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线薄膜结构在横向于光线的方向上。

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