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    • 13. 发明授权
    • Photosensitive resin film and cured film made therefrom
    • 感光树脂膜和由其制成的固化膜
    • US07214471B2
    • 2007-05-08
    • US10551447
    • 2004-03-25
    • Shin-ichiro IwanagaTooru KimuraKouji Nishikawa
    • Shin-ichiro IwanagaTooru KimuraKouji Nishikawa
    • G03F7/033
    • G03F7/031C08L33/04G03F7/029G03F7/033Y10S430/111Y10S430/121Y10S430/124C08L2666/02
    • The photosensitive resin film in an uncured state of the invention comprises (A) a specific alkali-soluble copolymer, (B) a compound having at least one ethylenically unsaturated double bond and (C) a radiation-sensitive radical polymerization initiator by the use of which a coating film having a dry film thickness of 70 μm in an uncured state has a 365 nm radiation transmittance of not less than 10% and a 405 nm radiation transmittance of not less than 60%, contains the radiation-sensitive radical polymerization initiator (C) in an amount of 20 to 40 parts by weight based on 100 parts by weight of the component (A), and has a dry film thickness of not less than 50 μm. According to the photosensitive resin film, a high bump having a height of not less than 50 μm can be readily formed on a chip substrate with high precision though formation of such a high bump is difficult by the conventional technique. Moreover, connection failure of an element can be inhibited, and reliability of an element can be enhanced.
    • 本发明的未固化状态的感光性树脂膜包含(A)特定的碱溶性共聚物,(B)具有至少一个烯键式不饱和双键的化合物和(C)使用辐射敏感性自由基聚合引发剂的 在未固化状态下具有70μm的干膜厚度的涂膜具有不小于10%的365nm辐射透射率和不小于60%的405nm辐射透射率,其含有辐射敏感性自由基聚合引发剂( C)相对于100重量份组分(A)为20至40重量份,干膜厚度不小于50微米。 根据感光性树脂膜,通过以往的技术难以形成这样高的凸起,难以高精度地在芯片基板上形成高度不小于50μm的高凸点。 此外,可以抑制元件的连接故障,并且可以提高元件的可靠性。
    • 18. 发明申请
    • Photosensitive resin film and cured film made therefrom
    • 感光树脂膜和由其制成的固化膜
    • US20060210912A1
    • 2006-09-21
    • US10551447
    • 2004-03-25
    • Shin-ichiro IwanagaTooru KimuraKouji Nishikawa
    • Shin-ichiro IwanagaTooru KimuraKouji Nishikawa
    • G03C1/76
    • G03F7/031C08L33/04G03F7/029G03F7/033Y10S430/111Y10S430/121Y10S430/124C08L2666/02
    • The photosensitive resin film in an uncured state of the invention comprises (A) a specific alkali-soluble copolymer, (B) a compound having at least one ethylenically unsaturated double bond and (C) a radiation-sensitive radical polymerization initiator by the use of which a coating film having a dry film thickness of 70 μm in an uncured state has a 365 nm radiation transmittance of not less than 10% and a 405 nm radiation transmittance of not less than 60%, contains the radiation-sensitive radical polymerization initiator (C) in an amount of 20 to 40 parts by weight based on 100 parts by weight of the component (A), and has a dry film thickness of not less than 50 μm. According to the photosensitive resin film, a high bump having a height of not less than 50 μm can be readily formed on a chip substrate with high precision though formation of such a high bump is difficult by the conventional technique. Moreover, connection failure of an element can be inhibited, and reliability of an element can be enhanced.
    • 本发明的未固化状态的感光性树脂膜包含(A)特定的碱溶性共聚物,(B)具有至少一个烯键式不饱和双键的化合物和(C)使用辐射敏感性自由基聚合引发剂的 在未固化状态下具有70μm的干膜厚度的涂膜具有不小于10%的365nm辐射透射率和不小于60%的405nm辐射透射率,其含有辐射敏感性自由基聚合引发剂( C)相对于100重量份组分(A)为20至40重量份,干膜厚度不小于50微米。 根据感光性树脂膜,通过以往的技术难以形成这样高的凸起,难以高精度地在芯片基板上形成高度不小于50μm的高凸点。 此外,可以抑制元件的连接故障,并且可以提高元件的可靠性。