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11. 发明授权

US11557665B2 Vertical high-blocking III-V bipolar transistor 有权
公开(公告)号：US11557665B2
公开(公告)日：2023-01-17
申请号：US17368279
申请日：2021-07-06
申请人： AZUR SPACE Solar Power GmbH
发明人： Gregor Keller , Clemens Waechter , Daniel Fuhrmann
IPC分类号： H01L29/737 , H01L29/08 , H01L29/10 , H01L29/205
摘要： A vertical high-blocking III-V bipolar transistor, which includes an emitter, a base and a collector. The emitter has a highly doped emitter semiconductor contact region of a first conductivity type and a first lattice constant. The base has a low-doped base semiconductor region of a second conductivity type and the first lattice constant. The collector has a layered low-doped collector semiconductor region of the first conductivity type with a layer thickness greater than 10 μm and the first lattice constant. The collector has a layered highly doped collector semiconductor contact region of the first conductivity type. A first metallic connecting contact layer is formed in regions being integrally connected to the emitter. A second metallic connecting contact layer is formed in regions being integrally connected to the base. A third metallic connecting contact region is formed at least in regions being arranged beneath the collector.

12. 发明授权

US11245012B2 Stacked high barrier III-V power semiconductor diode 有权
公开(公告)号：US11245012B2
公开(公告)日：2022-02-08
申请号：US16863585
申请日：2020-04-30
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Gregor Keller , Clemens Waechter
IPC分类号： H01L29/15 , H01L29/06 , H01L29/205 , H01L29/861
摘要： A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.

13. 发明授权

US10388819B2 Receiver unit 有权
公开(公告)号：US10388819B2
公开(公告)日：2019-08-20
申请号：US15998506
申请日：2018-08-16
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Thomas Lauermann , Gregor Keller
IPC分类号： H01L31/062 , H01L31/167 , H01L27/06 , H01L27/144 , H01L31/0304
摘要： A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.

14. 发明授权

US11859310B2 Vapor phase epitaxy method 有权
公开(公告)号：US11859310B2
公开(公告)日：2024-01-02
申请号：US17129737
申请日：2020-12-21
申请人： AZUR SPACE SOLAR POWER GMBH
发明人： Clemens Waechter , Gregor Keller , Daniel Fuhrmann
IPC分类号： C30B29/40 , C30B25/14 , C30B25/06 , C30B25/18 , H01L21/02 , C30B25/16
CPC分类号： C30B29/40 , C30B25/14 , C30B25/165 , C30B25/18 , H01L21/0251 , H01L21/0257 , H01L21/0262 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02576 , H01L21/02579
摘要： A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.

15. 发明授权

US10872887B2 Scalable voltage source 有权
公开(公告)号：US10872887B2
公开(公告)日：2020-12-22
申请号：US15158051
申请日：2016-05-18
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Wolfgang Guter , Victor Khorenko
IPC分类号： H01L29/66 , H01L27/08 , H01L31/0693 , H01L31/0687 , H01L31/02 , H01L23/31 , H01L29/06 , H01L29/20 , H01L29/861 , H01L29/868 , H01L29/88 , H01L31/0232 , H01L31/042
CPC分类号： H01L27/0814 , H01L23/3171 , H01L29/0692 , H01L29/20 , H01L29/861 , H01L29/868 , H01L29/88 , H01L31/02019 , H01L31/02325 , H01L31/042 , H01L31/0687 , H01L31/0693 , Y02E10/544
摘要： A scalable voltage source having a number N of mutually series-connected partial voltage sources designed as semiconductor diodes, wherein each of the partial voltage sources comprises a p-n junction of a semiconductor diode, and each semiconductor diode has a p-doped absorption layer, wherein the p-absorption layer is passivated by a p-doped passivation layer with a wider band gap than the band gap of the p-absorption layer and the semiconductor diode has an n-absorption layer, wherein the n-absorption layer is passivated by an n-doped passivation layer with a wider band gap than the band gap of the n-absorption layer, and the partial source voltages of the individual partial voltage sources deviate by less than 20%, and between in each case two successive partial voltage sources, a tunnel diode is arranged.

16. 发明申请

US20190058074A1 Receiver unit 审中-公开
公开(公告)号：US20190058074A1
公开(公告)日：2019-02-21
申请号：US15998506
申请日：2018-08-16
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Thomas Lauermann , Gregor Keller
IPC分类号： H01L31/167 , H01L27/144 , H01L31/0304 , H01L27/06
CPC分类号： H01L31/167 , H01L27/0629 , H01L27/1443 , H01L31/0304
摘要： A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.

17. 发明授权

US09741874B2 Scalable voltage source 有权
公开(公告)号：US09741874B2
公开(公告)日：2017-08-22
申请号：US15268884
申请日：2016-09-19
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Victor Khorenko , Wolfgang Guter
IPC分类号： H01L29/00 , H01L31/00 , H01L29/88 , H01L29/205 , H01L31/02 , H01L31/0304 , H01L31/0687 , H01L31/0693
CPC分类号： H01L29/88 , H01L29/205 , H01L31/02019 , H01L31/03046 , H01L31/0687 , H01L31/0693 , Y02E10/544
摘要： A scalable voltage source having a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, wherein each of the partial voltage sources has a semiconductor diode with a p-n junction. A tunnel diode is formed between sequential pairs of partial voltage sources, wherein the tunnel diode has multiple semiconductor layers with a larger band gap than the band gap of the p/n absorption layers and the semiconductor layers with the larger band gap are each made of a material with modified stoichiometry and/or a different elemental composition than the p/n absorption layers of the semiconductor diode. The partial voltage sources and the tunnel diodes are monolithically integrated together, and jointly form a first stack with a top and a bottom, and the number N of partial voltage sources is greater than or equal to two.

18. 发明授权

US09299886B2 LED semiconductor component 有权
标题翻译： LED半导体元件
公开(公告)号：US09299886B2
公开(公告)日：2016-03-29
申请号：US14609635
申请日：2015-01-30
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Florian Dunzer
IPC分类号： H01L33/00 , H01L33/06 , H01L33/30 , H01L33/02 , H01L33/14 , H01L33/40
CPC分类号： H01L33/06 , H01L33/025 , H01L33/14 , H01L33/30 , H01L33/40
摘要： An LED semiconductor component having an n-doped substrate layer and a first, n-doped cladding layer, wherein the cladding layer is located on the substrate layer, and having an active layer, wherein the active layer comprises a light-emitting layer and is located on the first cladding layer, and having a second, p-doped cladding layer, wherein the second cladding layer is located on the active layer, and having a p-doped current spreading layer, wherein the current spreading layer is located on the second cladding layer, and having a p-doped contact layer, wherein the p-doped contact layer is located on the current spreading layer, wherein the p-doped contact layer is made of an aluminiferous layer and has carbon as dopant.
摘要翻译：一种具有n掺杂衬底层和第一n掺杂包覆层的LED半导体元件，其中所述包覆层位于所述衬底层上并具有有源层，其中所述有源层包括发光层，并且是位于所述第一包层上，并且具有第二p掺杂包覆层，其中所述第二覆层位于所述有源层上，并且具有p掺杂电流扩展层，其中所述电流扩散层位于所述第二覆层并且具有p掺杂的接触层，其中p掺杂的接触层位于电流扩散层上，其中p掺杂的接触层由含铝层制成并且具有碳作为掺杂剂。

19. 发明授权

US11984523B2 Stacked, monolithic, upright metamorphic, terrestrial concentrator solar cell 有权
公开(公告)号：US11984523B2
公开(公告)日：2024-05-14
申请号：US16826777
申请日：2020-03-23
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Wolfgang Guter , Matthias Meusel
IPC分类号： H01L31/0687 , H01L31/078 , H01L31/0304
CPC分类号： H01L31/0687 , H01L31/078 , H01L31/03046
摘要： A stacked, monolithic, upright metamorphic, terrestrial concentrator solar cell having exactly five subcells and having a metamorphic buffer, wherein a first subcell has a first lattice constant G1 and consists essentially of germanium, a second subcell has a second lattice constant and GaInAs, a third subcell has the second lattice constant G2 and AlGaInAs, a fourth subcell has the second lattice constant G2 and InP, a fifth subcell has the second lattice constant G2 and InP, G1

20. 发明授权

US11715766B2 Stacked high barrier III-V power semiconductor diode 有权
公开(公告)号：US11715766B2
公开(公告)日：2023-08-01
申请号：US17559656
申请日：2021-12-22
申请人： AZUR SPACE Solar Power GmbH
发明人： Daniel Fuhrmann , Gregor Keller , Clemens Waechter
IPC分类号： H01L29/15 , H01L29/06 , H01L29/205 , H01L29/861
CPC分类号： H01L29/157 , H01L29/0619 , H01L29/205 , H01L29/861
摘要： A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.

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