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11. 发明授权

US06274891B1 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06274891B1
公开(公告)日：2001-08-14
申请号：US09392459
申请日：1999-09-09
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L3300
CPC分类号： H01S5/32325 , H01S5/026 , H01S5/0267 , H01S5/042 , H01S5/0654 , H01S5/0683 , H01S5/1064 , H01S5/1085 , H01S5/18 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2219 , H01S5/2231 , H01S5/32341
摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimism material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
摘要翻译：在使用GaN型化合物的半导体的半导体激光器中，使用乐观材料作为电流阻挡层，从而可以获得满足高发光效率或折射率的增益导引结构的半导体激光器引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向方向的扩展以及纵向模式的控制。

12. 发明授权

US06258619B1 Fabrication of semiconductor light emitting device 失效
标题翻译：半导体发光器件的制造
公开(公告)号：US06258619B1
公开(公告)日：2001-07-10
申请号：US09337396
申请日：1999-06-22
申请人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers are constituted by the n-type layer and the p-type layer on the substrate. A light emitting layer is formed together with the n-type and p-type layers in the semiconductor overlying layers to emit light. At least one of the n-type layer and the p-type layer is formed by three or more overlying sublayers including a sublayer of AlyGa1-yN (0
摘要翻译：半导体发光器件包括衬底，由形成在衬底上的氮化镓基化合物半导体形成的n型层和形成在衬底上的由氮化镓基化合物半导体形成的p型层。半导体覆盖层由衬底上的n型层和p型层构成。在半导体覆盖层中与n型和p型层一起形成发光层以发光。 n型层和p型层中的至少一层由包括AlyGa1-yN（0

13. 发明授权

US6156584A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US6156584A
公开(公告)日：2000-12-05
申请号：US48110
申请日：1998-03-26
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21/301 , H01L27/12 , H01L33/32 , H01L33/36 , H01S5/02 , H01S5/323 , H01L21/302
CPC分类号： H01S5/0201 , H01L33/0095 , H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first conductivity type of the semiconductor layer laminate, and on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching the semiconductor layer laminate, in association with the individual chips. Then, the semiconductor layer laminate is etched at boundary portions between the chips to expose the substrate, and the substrate is broken at the exposed portions into the chips. As the semiconductor layer laminate is etched out at the boundary portions between the chips before breaking the wafer, breaking can be facilitated without damaging the light emitting portions of the semiconductor layer laminate. This helps provide high-performance semiconductor light emitting devices.
摘要翻译：沉积在用于形成多个发光器件芯片的晶片状衬底上的是具有与衬底不同的性质的半导体层层压体。然后，电极设置在第一导电类型的半导体层层叠体的顶部半导体层上并与之连接，并与第二导电类型的半导体层电连接，通过局部蚀刻半导体层层叠体，与个别芯片相关联。然后，在芯片之间的边界部分处蚀刻半导体层层叠体，使基板露出，使基板在露出部分断裂成芯片。由于半导体层层叠体在断裂晶片之前在芯片之间的边界部分被蚀刻掉，所以可以在不破坏半导体层叠层的发光部分的情况下进行破坏。这有助于提供高性能半导体发光器件。

14. 发明授权

US5981978A Superluminescent diode and method for manufacturing the same 失效
标题翻译：超发光二极管及其制造方法
公开(公告)号：US5981978A
公开(公告)日：1999-11-09
申请号：US671366
申请日：1996-06-27
申请人： Masato Mushiage , Tatsuo Yamauchi , Yukio Shakuda
发明人： Masato Mushiage , Tatsuo Yamauchi , Yukio Shakuda
IPC分类号： H01L33/00 , H01L33/14 , H01L33/44 , H01S3/19
CPC分类号： H01L33/0045 , H01L33/145 , H01L33/44
摘要： A superluminiscent diode includes: a semiconductor substrate of a first conductivity type lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cladding layer of a second conductivity type opposite to the first conductivity type bis provided on the active layer. A current blocking layer of the first conductivity type, buried in the upper cladding layer. The current blocking layer has a stripe-shaped groove serving as a current-injection region. The current-injection region is formed in a manner that is extends from an end face of a chip to the inside of the chip, and has a length shorter than that of the chip. The current blocking layer is made of a material having a band gap energy not greater than that of the active layer and a refractive index not smaller than that of the active layer so that light advancing in the active layer is absorbable.
摘要翻译：超发光二极管包括：第一导电类型的第一导电型下包层的半导体衬底设置在半导体衬底上。在下包层上设置有源层。在有源层上设置与第一导电类型相反的第二导电类型的上包层。第一导电类型的电流阻挡层，埋在上覆层中。电流阻挡层具有用作电流注入区域的条形槽。电流注入区域以从芯片的端面延伸到芯片的内部的方式形成，并且其长度短于芯片的长度。电流阻挡层由具有不大于有源层的带隙能量且不小于有源层的折射率的材料制成，使得在有源层中前进的光是可吸收的。

15. 发明授权

US5838029A GaN-type light emitting device formed on a silicon substrate 失效
标题翻译：形成在硅衬底上的GaN型发光器件
公开(公告)号：US5838029A
公开(公告)日：1998-11-17
申请号：US517121
申请日：1995-08-21
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L33/00 , H01L33/02 , H01L33/16 , H01L29/26
CPC分类号： H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/16
摘要： A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.
摘要翻译：本发明提供一种采用氮化镓型化合物半导体的发光器件，其不产生晶体缺陷，位错，并且可以通过切割容易地分离成芯片及其制造方法。作为叠氮化镓型化合物半导体层的基板，氮化镓系化合物半导体衬底，单晶硅，II-VI族化合物半导体衬底或III-V族化合物半导体衬底。

16. 发明授权

US5583880A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5583880A
公开(公告)日：1996-12-10
申请号：US530633
申请日：1995-09-20
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01S5/2231
摘要： A semiconductor comprising: a current blocking layer made of gallium nitride type compound; an active layer comprising a semiconductor made of gallium nitride type compound; an upper cladding layer and lower cladding layer made of gallium nitride compound wherein the active layer is provided between the upper and lower clad layers; wherein a stripe groove functioning as a current path is formed in said current blocking layer within at least one layer of the upper and lower clad layers.
摘要翻译：一种半导体，包括：由氮化镓类化合物制成的电流阻挡层; 包括由氮化镓类化合物制成的半导体的有源层; 上覆层和由氮化镓化合物制成的下包层，其中有源层设置在上包层和下覆层之间; 其特征在于，在所述上下包层的至少一层中的所述电流阻挡层中形成有作为电流路径的条纹槽。

17. 发明授权

US07977703B2 Nitride semiconductor device having a zinc-based substrate 有权
标题翻译：具有锌基衬底的氮化物半导体器件
公开(公告)号：US07977703B2
公开(公告)日：2011-07-12
申请号：US12085327
申请日：2006-11-21
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L29/24 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/205 , H01L29/22
CPC分类号： H01L33/007 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02636 , H01S5/0218 , H01S5/32341 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor device includes a semiconductor substrate; a first nitride semiconductor layer provided on the semiconductor substrate; a mask layer having opening portions, provided on the first nitride semiconductor layer; a second nitride semiconductor layer selectively grown on the mask layer laterally from the opening portions; and a semiconductor lamination portion formed by laminating nitride semiconductor layers so as to form a semiconductor element on the second nitride semiconductor layer. The substrate may be made of a zinc-based compound, the first nitride semiconductor layer may be provided on, and in contact with, the substrate, and at least a substrate side of the first nitride semiconductor layer may be made of AlyGa1-yN (0.05≦y≦0.2). Additionally, the semiconductor element may be a light emitting layer in which case the mask layer may include a metal film provided on the first nitride semiconductor layer and an insulating film provided on the metal film.
摘要翻译：氮化物半导体器件包括半导体衬底; 设置在所述半导体基板上的第一氮化物半导体层; 具有开口部的掩模层，设置在所述第一氮化物半导体层上; 从所述开口部侧向选择性地在所述掩模层上生长的第二氮化物半导体层; 以及通过层叠氮化物半导体层以在第二氮化物半导体层上形成半导体元件而形成的半导体层叠部。衬底可以由锌基化合物制成，第一氮化物半导体层可以设置在衬底上并与衬底接触，并且第一氮化物半导体层的至少衬底侧可以由Al y Ga 1-y N（ 0.05＆nlE; y＆nlE; 0.2）。此外，半导体元件可以是发光层，在这种情况下，掩模层可以包括设置在第一氮化物半导体层上的金属膜和设置在金属膜上的绝缘膜。

18. 发明授权

US07973321B2 Nitride semiconductor light emitting device having ridge parts 有权
标题翻译：具有脊部的氮化物半导体发光元件
公开(公告)号：US07973321B2
公开(公告)日：2011-07-05
申请号：US12289848
申请日：2008-11-05
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/32
摘要： As an example of a nitride semiconductor light emitting device, on a sapphire substrate, a GaN buffer layer, an n-type GaN contact layer, an MQW active layer, and a p-type GaN contact layer are sequentially stacked, and a partial region from the p-type GaN contact layer to the middle of the n-type GaN contact layer is mesa-etched so as to form an n electrode. Meanwhile, a p electrode is provided on the p-type GaN contact layer, and, in addition to the p electrode, multiple ridge parts are formed by crystal growth so as to be scattered. By providing the multiple ridge parts, device characteristics can be improved without causing damage on the GaN-based semiconductor layer.
摘要翻译：作为氮化物半导体发光器件的例子，在蓝宝石衬底上依次层叠有GaN缓冲层，n型GaN接触层，MQW有源层和p型GaN接触层，部分区域从p型GaN接触层到n型GaN接触层的中间进行台面蚀刻，以形成n电极。同时，在p型GaN接触层上设置p电极，并且除了p电极之外，通过晶体生长形成多个脊部以便散射。通过提供多个脊部，可以改善器件特性，而不会对GaN基半导体层造成损害。

19. 发明授权

US07902770B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US07902770B2
公开(公告)日：2011-03-08
申请号：US12094091
申请日：2006-11-15
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H05B37/02
CPC分类号： H05B33/089 , H05B33/0812 , H05B33/0827 , Y02B20/341
摘要： A light emitting element group includes a plurality of light emitting element units connected in series. A first current limiting circuit is arranged in series with the light emitting element group, and limits a first drive current flowing from one end to the other end of the light emitting element group. A second current limiting circuit is arranged in parallel to the first current limiting circuit, and limits a second drive current flowing in an opposite direction to the first drive current in the light emitting element group. The light emitting element units are configured to include a first light emitting element and a second light emitting element; an anode of the first light emitting element and a cathode of the second light emitting element are connected, and an anode of the second light emitting element and a cathode of the first light emitting element are connected.
摘要翻译：发光元件组包括串联连接的多个发光元件单元。第一限流电路与发光元件组串联布置，并且限制从发光元件组的一端流到另一端的第一驱动电流。第二限流电路与第一限流电路并联设置，并限制在与发光元件组中的第一驱动电流相反的方向上流动的第二驱动电流。发光元件单元被配置为包括第一发光元件和第二发光元件; 连接第一发光元件的阳极和第二发光元件的阴极，并且连接第二发光元件的阳极和第一发光元件的阴极。

20. 发明授权

US07847305B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07847305B2
公开(公告)日：2010-12-07
申请号：US12226007
申请日：2007-04-03
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L33/00
CPC分类号： H01L33/0004 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A plurality of transistors are formed on a substrate in a plurality of columns. Each transistor has a first conductivity type region and second conductivity type regions provided on both sides thereof in a column direction, and has an active layer on the side of each second conductivity type region closer to the substrate. Between two columns adjacent to each other, the second conductivity type region on a first side in the column direction of each transistor arranged on a first column, the second conductivity type region on a second side in the column direction of the transistor adjacent to this transistor on the first side in the column direction and the first conductivity type region of each transistor arranged on a second column are electrically connected by a first wire. Between these two columns, the second conductivity type region on the first side in the column direction of each transistor arranged on the second column, the second conductivity type region on the second side in the column direction of the transistor adjacent to this transistor on the first side in the column direction and the first conductivity type region of each transistor arranged on the first column are electrically connected by a second wire.
摘要翻译：在多个列中的基板上形成多个晶体管。每个晶体管具有沿列方向设置在其两侧的第一导电类型区域和第二导电类型区域，并且在靠近基板的每个第二导电类型区域的侧面上具有有源层。在彼此相邻的两列之间，布置在第一列上的每个晶体管的列方向上的第一侧上的第二导电类型区域，与该晶体管相邻的晶体管的列方向上的第二侧上的第二导电类型区域在列方向的第一侧和布置在第二列上的每个晶体管的第一导电类型区域通过第一布线电连接。在这两列之间，布置在第二列上的每个晶体管的列方向上的第一侧的第二导电类型区域与第一列上与该晶体管相邻的晶体管的列方向上的第二侧上的第二导电类型区域配置在第一列的每个晶体管的第一导电类型区域通过第二导线电连接。

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