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11. 发明授权

US08324456B2 Method for improving transformation efficiency using powder 有权
标题翻译：使用粉末提高转化效率的方法
公开(公告)号：US08324456B2
公开(公告)日：2012-12-04
申请号：US12086426
申请日：2006-12-13
申请人： Yuji Ishida , Yukoh Hiei , Jun Ueki , Takeshi Yamamoto
发明人： Yuji Ishida , Yukoh Hiei , Jun Ueki , Takeshi Yamamoto
IPC分类号： C12N15/84 , A01H4/00
CPC分类号： C12N15/8205
摘要： The present invention provides a method for Agrobacterium-mediated gene transfer into a plant material, which comprises inoculating an Agrobacterium into the plant material in the presence of a powder. In the method of the present invention, the powder at least does not affect living tissues and has one or more properties selected from the group consisting of: being insoluble in water; having an affinity for living tissues; having adsorption properties; and having a surface polarity. The present invention also provides a method for producing a transformed plant, which comprises using the gene transfer method of the present invention.
摘要翻译：本发明提供了将土壤杆菌介导的基因转移到植物材料中的方法，其包括在粉末存在下将土壤杆菌接种到植物材料中。在本发明的方法中，所述粉末至少不影响活体组织，并且具有选自下组的一种或多种性质：不溶于水; 对活组织有亲和力; 具有吸附性能; 并具有表面极性。本发明还提供一种生产转化植物的方法，其包括使用本发明的基因转移方法。

12. 发明授权

US08298819B2 Cosmid vector for plant transformation and use thereof 有权
标题翻译：用于植物转化的粘粒载体及其用途
公开(公告)号：US08298819B2
公开(公告)日：2012-10-30
申请号：US12306163
申请日：2007-06-25
申请人： Yoshimitsu Takakura , Toshihiko Komari , Yuji Ishida , Toshiyuki Komori , Yukoh Hiei , Toshiki Mine , Teruyuki Imayama
发明人： Yoshimitsu Takakura , Toshihiko Komari , Yuji Ishida , Toshiyuki Komori , Yukoh Hiei , Toshiki Mine , Teruyuki Imayama
IPC分类号： C12N15/82 , C12N15/19 , C12N15/00
CPC分类号： C12N15/82 , C12N15/8205
摘要： The present invention aims to provide novel vectors for plant transformation.The vectors of the present invention are cosmid vectors having a full length of 15 kb or less characterized in that: 1) they contain an origin of replication of an IncP plasmid, but do not contain any origin of replication of other plasmid groups; 2) they contain the trfA1 gene of an IncP plasmid; 3) they contain an oriT of an IncP plasmid; 4) they contain the incC1 gene of an IncP plasmid; 5) they contain a cos site of lambda phage and the cos site is located outside the T-DNA; 6) they contain a drug resistance gene expressed in E. coli and a bacterium of the genus Agrobacterium; 7) they contain a T-DNA right border sequence of a bacterium of the genus Agrobacterium; 8) they contain a T-DNA left border sequence of a bacterium of the genus Agrobacterium; 9) they contain a selectable marker gene for plant transformation located between 7) and 8) and expressed in a plant; and 10) they contain restriction endonuclease recognition site(s) located between 7) and 8) for cloning a foreign gene.
摘要翻译：本发明旨在提供用于植物转化的新型载体。本发明的载体是全长为15kb或更小的粘粒载体，其特征在于：1）它们含有IncP质粒的复制起点，但不含有其他质粒组的任何复制起点; 2）它们含有IncP质粒的trfA1基因; 3）它们含有一个IncP质粒的oriT; 4）它们含有IncP质粒的incC1基因; 5）它们含有λ噬菌体的cos位点，cos位点位于T-DNA外部; 6）它们含有在大肠杆菌中表达的耐药基因和农杆菌属的细菌; 7）它们含有农杆菌属细菌的T-DNA右侧序列; 8）它们含有农杆菌属细菌的T-DNA左边界序列; 9）它们含有位于7）和8之间的植物转化的选择性标记基因并在植物中表达; 和10）它们含有位于7）和8之间的限制性内切核酸酶识别位点，用于克隆外来基因。

13. 发明授权

US08155162B2 Nitride semiconductor laser device and method of manufacturing the same 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US08155162B2
公开(公告)日：2012-04-10
申请号：US12982677
申请日：2010-12-30
申请人： Shinichi Kohda , Yuji Ishida
发明人： Shinichi Kohda , Yuji Ishida
IPC分类号： H01S5/00 , H01S3/13 , H01S3/08
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2924/10156 , H01S5/042 , H01S5/32341 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The laser resonator is arranged to be offset from the center with respect to a device width direction orthogonal to a resonator direction toward one side edge of the device. A wire bonding region having a width of not less than twice the diameter of an electrode wire to be bonded to the device is formed between the laser resonator and the other side edge of the device.
摘要翻译：通过在基板上生长III族氮化物半导体多层结构来形成氮化物半导体激光器件。 III族氮化物半导体多层结构具有包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层的激光谐振器。激光谐振器被布置成相对于朝向与器件的一个侧边缘的谐振器方向正交的器件宽度方向从中心偏移。在激光谐振器和装置的另一侧边缘之间形成具有不小于要与器件接合的电极线的直径的两倍的宽度的引线接合区域。

14. 发明授权

US08039687B2 Method for screening genomic DNA fragments 有权
标题翻译：筛选基因组DNA片段的方法
公开(公告)号：US08039687B2
公开(公告)日：2011-10-18
申请号：US10576693
申请日：2004-10-22
申请人： Tomoaki Kubo , Toshihiko Komari , Satoru Usami , Yoshimitsu Takakura , Yukoh Hiei , Yuji Ishida
发明人： Tomoaki Kubo , Toshihiko Komari , Satoru Usami , Yoshimitsu Takakura , Yukoh Hiei , Yuji Ishida
IPC分类号： C12N15/82 , C12N15/10 , C12N15/29 , C12N15/55 , C12N15/70 , C12N15/84
CPC分类号： A01H1/00 , A01H1/04 , C12N15/8201 , C12N15/8261 , Y02A40/146
摘要： The present invention provides a method for selecting genomic DNA fragments which are useful for providing a plant with an agriculturally advantageous improvement. The method of the present invention comprises the steps of: 1) preparing genomic DNA from a plant, which is then cloned into a cloning vector to form a genomic DNA library; 2) introducing a genomic fragment from each of the genomic clones constituting the genomic DNA library separately into a plant to produce transgenic plants; 3) cultivating the transgenic plants or progeny thereof to select a plant exhibiting an agriculturally advantageous phenotypic variation; and 4) selecting the genomic DNA fragment, which was introduced in step (2) into the plant selected in step (3), as a purposed genomic DNA fragment.
摘要翻译：本发明提供了一种选择可用于提供具有农业上有利改进的植物的基因组DNA片段的方法。本发明的方法包括以下步骤：1）从植物制备基因组DNA，然后将其克隆到克隆载体中以形成基因组DNA文库; 2）将构成基因组DNA文库的每个基因组克隆的基因组片段分别引入植物中以产生转基因植物; 3）培育转基因植物或其后代以选择表现出农业上有利的表型变异的植物; 和4）将在步骤（2）中引入的基因组DNA片段选择在步骤（3）中选择的植物中，作为目的基因组DNA片段。

15. 发明授权

US07939328B1 Method of transforming monocotyledons using scutella of immature embryos 失效
标题翻译：使用未成熟胚的小檗转化单子叶植物的方法
公开(公告)号：US07939328B1
公开(公告)日：2011-05-10
申请号：US08428238
申请日：1994-09-01
申请人： Hideaki Saito , Yuji Ishida , Yukoh Hiei , Toshihiko Komari
发明人： Hideaki Saito , Yuji Ishida , Yukoh Hiei , Toshihiko Komari
IPC分类号： C12N15/82
CPC分类号： C12N15/8205
摘要： Disclosed is a method of transforming monocotyledons which necessitates only a short period from the transformation to the regeneration of a whole plant as compared with the conventional methods, thus reducing the frequency of occurrence of mutants, and can be generally applied to the plants for which any system of regenerating the whole plants from protoplasts has not been established, and in which the material to be used can be readily prepared without any particular apparatuses. The present invention provides a method for transforming monocotyledons comprising transforming scutellum of an immature embryo of a monocotyledon with a bacterium belonging to genus Agrobacterium containing a desired gene, which immature embryo has not been subjected to a dedifferentiation treatment, to obtain a transformant.
摘要翻译：本发明公开了一种转化单子叶植物的方法，其与常规方法相比仅需要从整个植物的转化到再生的短的时间，从而降低突变体的发生频率，并且通常可以应用于任何尚未建立从原生质体再生整株植物的系统，其中待使用的材料可以在没有任何特定装置的情况下容易地制备。本发明提供一种用于将单子叶植物的未成熟胚的鳞片状细菌与含有未成熟胚的未分化处理的所需基因的农杆菌属的农杆菌属转化成单转基因的方法，得到转化体。

16. 发明申请

US20110096805A1 NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US20110096805A1
公开(公告)日：2011-04-28
申请号：US12982677
申请日：2010-12-30
申请人： Shinichi KOHDA , Yuji Ishida
发明人： Shinichi KOHDA , Yuji Ishida
IPC分类号： H01S5/323 , H01L21/30
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2924/10156 , H01S5/042 , H01S5/32341 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The laser resonator is arranged to be offset from the center with respect to a device width direction orthogonal to a resonator direction toward one side edge of the device. A wire bonding region having a width of not less than twice the diameter of an electrode wire to be bonded to the device is formed between the laser resonator and the other side edge of the device.
摘要翻译：通过在基板上生长III族氮化物半导体多层结构来形成氮化物半导体激光器件。 III族氮化物半导体多层结构具有包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层的激光谐振器。激光谐振器被布置成相对于朝向与器件的一个侧边缘的谐振器方向正交的器件宽度方向从中心偏移。在激光谐振器和装置的另一侧边缘之间形成具有不小于要与器件接合的电极线的直径的两倍的宽度的引线接合区域。

17. 发明授权

US07885303B2 Nitride semiconductor laser device and method of manufacturing the same 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07885303B2
公开(公告)日：2011-02-08
申请号：US12344352
申请日：2008-12-26
申请人： Shinichi Kohda , Yuji Ishida
发明人： Shinichi Kohda , Yuji Ishida
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2924/10156 , H01S5/042 , H01S5/32341 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The laser resonator is arranged to be offset from the center with respect to a device width direction orthogonal to a resonator direction toward one side edge of the device. A wire bonding region having a width of not less than twice the diameter of an electrode wire to be bonded to the device is formed between the laser resonator and the other side edge of the device.
摘要翻译：通过在基板上生长III族氮化物半导体多层结构来形成氮化物半导体激光器件。 III族氮化物半导体多层结构具有包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层的激光谐振器。激光谐振器被布置成相对于朝向与器件的一个侧边缘的谐振器方向正交的器件宽度方向从中心偏移。在激光谐振器和装置的另一侧边缘之间形成具有不小于要与器件接合的电极线的直径的两倍的宽度的引线接合区域。

18. 发明授权

US07851671B2 Disease-resistant plants and method of constructing the same 失效
标题翻译：抗病植物及其构建方法
公开(公告)号：US07851671B2
公开(公告)日：2010-12-14
申请号：US12406502
申请日：2009-03-18
申请人： Yoshimitsu Takakura , Yasuhiro Inoue , Shigeru Kuwata , Fumiki Tsutsumi , Yuji Ishida
发明人： Yoshimitsu Takakura , Yasuhiro Inoue , Shigeru Kuwata , Fumiki Tsutsumi , Yuji Ishida
IPC分类号： A01H5/00 , C12N15/09 , C12N15/82 , C12N15/31
CPC分类号： C12N15/8282 , C07K14/21
摘要： The present invention provides transgenic, disease-resistant plants which have been transformed with an expression cassette including a constitutive gene expression promoter; and a gene, under the control of the promoter, encoding a harpin. The transformed cells in the transgenic plant effect the constitutive expression of the harpin in an amount effective for inducing a defense reaction. The harpin is a protein consisting of an amino acid sequence that is at least 90% homologous to the amino acid sequence of SEQ ID NO: 2, and possesses a hypersensitive-response-inducing activity. The present invention also provides methods for producing the transgenic plants, expression cassettes, recombinant vectors and genes encoding harpins.
摘要翻译：本发明提供已经用包含组成型基因表达启动子的表达盒转化的转基因抗病植物; 和在启动子控制下编码harpin的基因。转基因植物中的转化细胞以有效诱导防御反应的量影响哈丁的组成型表达。 harpin是由与SEQ ID NO：2的氨基酸序列至少90％同源的氨基酸序列组成的蛋白质，并且具有过敏反应诱导活性。本发明还提供了用于生产转基因植物，表达盒，重组载体和编码竖琴的基因的方法。

19. 发明申请

US20090229011A1 DISEASE-RESISTANT PLANTS AND METHOD OF CONSTRUCTING THE SAME 失效
标题翻译：抗病植物及其构建方法
公开(公告)号：US20090229011A1
公开(公告)日：2009-09-10
申请号：US12406502
申请日：2009-03-18
申请人： Yoshimitsu TAKAKURA , Yasuhiro Inoue , Shigeru Kuwata , Fumiki Tsutsumi , Yuji Ishida
发明人： Yoshimitsu TAKAKURA , Yasuhiro Inoue , Shigeru Kuwata , Fumiki Tsutsumi , Yuji Ishida
IPC分类号： A01H5/00 , C12N15/82 , C12N15/63 , C07H21/04
CPC分类号： C12N15/8282 , C07K14/21
摘要： It is the object of the present invention to provide disease-resistant plants which have been transformed to cause an effective defense reaction, and methods for producing the same. The present invention provides expression cassettes comprising a promoter capable of promoting a constitutive, inducible, or organ- or phase-specific gene expression, and a gene, under the control of said promoter, encoding an elicitor protein.
摘要翻译：本发明的目的是提供已经转化以产生有效防御反应的抗病植物及其制备方法。本发明提供了包含能够促进组成型，诱导型或器官或相位特异性基因表达的启动子的表达盒，以及在所述启动子控制下编码引发蛋白的基因。

20. 发明申请

US20090200571A1 Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type 有权
标题翻译：结合型半导体发光元件和结合型半导体发光元件
公开(公告)号：US20090200571A1
公开(公告)日：2009-08-13
申请号：US12320841
申请日：2009-02-05
申请人： Yuji Ishida
发明人： Yuji Ishida
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L2224/16225 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22
摘要： In a semiconductor light emitting device of junction-down type, a semiconductor light emitting element having a stripe part is provided with a bonding part for die bonding in a part of a surface thereof where the stripe part is formed, the bonding part being at a position away from the stripe part, and being junction-down bonded onto an electrode pattern on a holding substrate.
摘要翻译：在结低型半导体发光器件中，具有条纹部分的半导体发光元件在其形成条纹部分的表面的一部分中设置有用于芯片接合的接合部分，所述接合部分处于位置远离条纹部分，并且被下降结合到保持基板上的电极图案上。

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