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11. 发明申请

US20130309845A1 METHOD OF PROCESSING SUBSTRATE 有权
标题翻译：处理基板的方法
公开(公告)号：US20130309845A1
公开(公告)日：2013-11-21
申请号：US13473699
申请日：2012-05-17
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： B08B3/08 , H01L21/322
CPC分类号： H01L21/02057
摘要： A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.
摘要翻译：提供了一种处理衬底的方法。该方法包括提供衬底，在衬底上执行器件形成工艺，以及清洁衬底。清洁衬底的步骤包括用原子喷雾清洗衬底并用去离子水冲洗衬底。

12. 发明申请

US20090216677A1 System and Method for Virtual Capital Operation 审中-公开
标题翻译：虚拟资本运作的系统与方法
公开(公告)号：US20090216677A1
公开(公告)日：2009-08-27
申请号：US12406582
申请日：2009-03-18
申请人： Shin-Hsien Kuo , Tsung-Hsun Tsai , Ying-Teng Chen , Jen-Shun Yang
发明人： Shin-Hsien Kuo , Tsung-Hsun Tsai , Ying-Teng Chen , Jen-Shun Yang
IPC分类号： G06Q40/00
CPC分类号： G06Q40/02 , G06Q20/10 , G06Q20/40
摘要： A system for virtual capital operation over a network such as the internet includes a platform for a transaction between a first user and a second user of the system, a data processor for processing the flow of virtual currency occurred at the transaction between the first user and second user, and a trust company to allow real currency to be stored therein or withdrew therefrom in response to the flow of real currency occurred at the transaction, wherein the data processor generates an amount of virtual currency in response to an amount of real currency entrusted to the trust company.
摘要翻译：用于通过诸如因特网的网络进行虚拟资本操作的系统包括用于系统的第一用户和第二用户之间的交易的平台，用于处理在第一用户与第一用户之间的交易处发生的虚拟货币流的数据处理器第二用户和信托公司，以允许真实货币存储在其中或从交易中发生的真实货币流中撤回，其中数据处理器响应于委托的实际货币量产生一定量的虚拟货币给信托公司。

13. 发明申请

US20120160272A1 CLEANING METHOD OF SEMICONDUCTOR PROCESS 审中-公开
标题翻译：半导体工艺清洗方法
公开(公告)号：US20120160272A1
公开(公告)日：2012-06-28
申请号：US12977322
申请日：2010-12-23
申请人： Tsung-Hsun TSAI
发明人： Tsung-Hsun TSAI
IPC分类号： B08B3/02 , B08B7/04
CPC分类号： H01L21/02057 , H01L21/67051
摘要： The present invention is to provide a cleaning method to a process for fabricating a semiconductor. The method comprises steps as follows: A semiconductor substrate is first provided. An atomized spray are then continually supplied for a first time interval to clean the semiconductor substrate; and a water film is formed on the surface of the semiconductor substrate at or before a start point of the first time interval to buffer the impact imposed by the atomized spray, wherein the water film is preserved for a second time interval at least partially overlaps the first time interval.
摘要翻译：本发明提供一种制造半导体工艺的清洗方法。该方法包括以下步骤：首先提供半导体衬底。然后将雾化的喷雾持续供给第一时间间隔以清洁半导体衬底; 并且在第一时间间隔的开始点之前或之前在半导体衬底的表面上形成水膜以缓冲由雾化喷雾施加的冲击，其中将水膜保持第二时间间隔至少部分地与第一时间间隔。

14. 发明授权

US07393797B2 Method for thermal processing a semiconductor wafer 有权
标题翻译：半导体晶片热处理方法
公开(公告)号：US07393797B2
公开(公告)日：2008-07-01
申请号：US11463302
申请日：2006-08-08
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： H01L21/324
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.
摘要翻译：公开了半导体晶片的热处理方法。快速热处理（RTP）室包括加热装置，旋转装置和用于冷却所述RTP室的壁的冷却系统。通过使用冷却系统将半导体晶片装载到RTP室中，正在冷却至第一温度。当加载半导体晶片时，其温度低于第一温度，从而导致从RTP室的壁向半导体晶片上的颗粒沉积的倾向。利用加热装置将半导体晶片预热至高于第一温度的第二温度，从而消除了颗粒沉积的倾向。当达到第二温度时，旋转装置被启动以开始旋转半导体晶片，同时半导体晶片被斜升至第三温度。

15. 发明授权

US07321722B2 Method for thermal processing a semiconductor wafer 有权
公开(公告)号：US07321722B2
公开(公告)日：2008-01-22
申请号：US11160199
申请日：2005-06-13
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： A21B2/00 , F26B3/30 , C16
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.

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