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11. 发明申请

US20110112789A1 Reversible Permeability Measuring Device 有权
标题翻译：可逆通量测量装置
公开(公告)号：US20110112789A1
公开(公告)日：2011-05-12
申请号：US13001896
申请日：2009-07-01
申请人： Kwon Sang Ryu , Soo Young Park , Jong Seo Park , In Hyun Cheong , Kee-Bong Yoon
发明人： Kwon Sang Ryu , Soo Young Park , Jong Seo Park , In Hyun Cheong , Kee-Bong Yoon
IPC分类号： G06F19/00
CPC分类号： G01R33/1223
摘要： The present invention relates to a reversible permeability measuring device for measuring magnetic characteristics and magnetic flux change in a specimen, as one of a plurality of non-destructive methods for evaluating mechanical properties. The reversible permeability measuring device of the present invention directly measures a magnetic field change induced at the surface of the specimen through the use of a magnetic potentiometer and a flux meter, thereby accurately evaluating the deterioration of materials.
摘要翻译：本发明涉及一种用于测量样品中的磁特性和磁通量变化的可逆磁导率测量装置，作为用于评估机械性能的多种非破坏性方法之一。本发明的可逆磁导率测量装置通过使用磁电位计和磁通计直接测量在样品表面引起的磁场变化，从而准确地评估材料的劣化。

12. 发明申请

US20090226964A1 Polymyxin Synthetase and Gene Cluster Thereof 有权
标题翻译：多粘菌素合成酶及其基因簇
公开(公告)号：US20090226964A1
公开(公告)日：2009-09-10
申请号：US12096789
申请日：2006-11-08
申请人： Seung-Hwan Park , Jihyun F. Kim , ChoongHwan Lee , Soo-Keun Choi , Heayoung Jeong , Seong-Bin Kim , Yon Kyoung Park , Rumi Kim , Choong-Min Ryu , Soo-Young Park
发明人： Seung-Hwan Park , Jihyun F. Kim , ChoongHwan Lee , Soo-Keun Choi , Heayoung Jeong , Seong-Bin Kim , Yon Kyoung Park , Rumi Kim , Choong-Min Ryu , Soo-Young Park
IPC分类号： C12P21/04 , C12N9/00 , C07H21/04 , C12N15/63 , C12N1/21
CPC分类号： C12N15/52
摘要： The present invention relates to a polymyxin synthetase isolated from Gram-positive Paenibacillus sp. and a gene cluster encoding the same, more precisely a polymyxin synthetase isolated from Paenibacillus polymyxa E681, a gene cluster encoding thereof and a preparation method of polymyxin or its derivatives using the gene cluster. The polymyxin synthetase of the present invention can be effectively used for the increase of productivity of polymyxin and the development of a novel antibiotic.
摘要翻译：本发明涉及从革兰氏阳性Paenibacillus sp。分离的多粘菌素合成酶。和编码该基因簇的基因簇，更确切地说，是从多粘类芽孢杆菌E681分离的多粘菌素合成酶，其编码基因簇和使用该基因簇的多粘菌素或其衍生物的制备方法。本发明的多粘菌素合成酶可有效地用于提高多粘菌素的生产力和开发新的抗生素。

13. 发明申请

US20090090427A1 Welding Wire Weaving Apparatus for Submerged Arc Welding Carriage 审中-公开
标题翻译：埋弧焊机用焊丝编织装置
公开(公告)号：US20090090427A1
公开(公告)日：2009-04-09
申请号：US12233001
申请日：2008-09-18
申请人： Kwang Hee Yun , Jin Yong Kim , Soo Young Park , Gwi Bong Park , Chang Geun Lee , Gyu Seog Jo
发明人： Kwang Hee Yun , Jin Yong Kim , Soo Young Park , Gwi Bong Park , Chang Geun Lee , Gyu Seog Jo
IPC分类号： B21F27/00
CPC分类号： B23K9/133 , B23K9/186
摘要： A welding wire weaving apparatus for a submerged arc welding carriage includes a truck running in a welding direction, a control panel controlling parameters required for welding and weaving operations, a welding wire reel mounting a welding wire thereon, a welding wire supplier supplying the welding wire to an upper part of a member to be welded, a weaver unit weaving the welding wire transversely, a supplier supporting shaft supporting the welding wire supplier at an upper part of the truck, and a weaver unit connection bar connecting the weaver unit to the supplier supporting shaft. The welding wire supplier includes a supply guiding roller, a compressive supplying roller, a welding wire guide bundle, a needle bearing, a welding wire guide bundle and an insulator formed between the needle bearing and the welding wire guide bundle.
摘要翻译：一种用于埋弧焊接托架的焊丝编织装置包括：沿焊接方向运行的卡车，控制焊接和织造操作所需的参数的控制面板，在其上安装焊丝的焊丝卷筒，提供焊丝的焊丝供应器到待焊接部件的上部，横向编织焊丝的织造单元，在卡车上部支撑焊丝供应器的供应商支撑轴和将织造单元连接到供应商的织造单元连接杆支撑轴。焊丝供给装置包括：供给引导辊，压缩供给辊，焊丝引导束，滚针轴承，焊丝引导束和形成在滚针轴承与焊丝引导束之间的绝缘体。

14. 外观设计

USD584738S1 MP3 player 有权
公开(公告)号：USD584738S1
公开(公告)日：2009-01-13
申请号：US29284994
申请日：2007-09-19
申请人： Hyoung Won Kim , Soo Young Park
设计人： Hyoung Won Kim , Soo Young Park

15. 发明申请

US20050250284A1 Method for fabricating semiconductor device with recessed channel region 失效
标题翻译：用于制造具有凹陷沟道区域的半导体器件的方法
公开(公告)号：US20050250284A1
公开(公告)日：2005-11-10
申请号：US11030438
申请日：2004-12-22
申请人： Soo-Young Park
发明人： Soo-Young Park
IPC分类号： H01L29/78 , H01L21/00 , H01L21/335 , H01L21/336 , H01L21/76 , H01L21/8234 , H01L21/8242
CPC分类号： H01L21/823425 , H01L21/823437 , H01L27/10873 , H01L29/66621 , H01L29/7834
摘要： Disclosed is a method for fabricating a semiconductor device with a plurality of recessed channel regions. This method includes the steps of: forming a plurality of device isolation layers in a substrate; forming a hard mask nitride layer, a hard mask oxide layer and a hard mask polysilicon layer on the device isolation and the substrate, thereby obtaining a hard mask pattern; forming a plurality of trenches in the predetermined regions of the substrate with use of the hard mask pattern to expose a plurality of recessed channel regions; selectively removing the hard mask pattern; and forming a plurality of gate structures in the plurality of trenches.
摘要翻译：公开了一种制造具有多个凹陷沟道区域的半导体器件的方法。该方法包括以下步骤：在衬底中形成多个器件隔离层; 在器件隔离和衬底上形成硬掩模氮化物层，硬掩模氧化物层和硬掩模多晶硅层，从而获得硬掩模图案; 在所述基板的所述预定区域中使用所述硬掩模图案形成多个沟槽以暴露多个凹陷沟道区域; 选择性地去除硬掩模图案; 以及在所述多个沟槽中形成多个栅极结构。

16. 发明申请

US20140326305A1 SOLAR CELL AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20140326305A1
公开(公告)日：2014-11-06
申请号：US14239693
申请日：2012-08-17
申请人： Chang Ki Baek , Yoon Ha Jeong , Seong Wook Choi , Tai Uk Rim , Soo Young Park , Myung Dong Ko
发明人： Chang Ki Baek , Yoon Ha Jeong , Seong Wook Choi , Tai Uk Rim , Soo Young Park , Myung Dong Ko
IPC分类号： H01L31/0352 , H01L31/0224 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/035227 , H01L31/022466 , H01L31/02327 , H01L31/035281 , H01L31/0547 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547
摘要： Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.
摘要翻译：公开了一种太阳能电池及其制造方法。太阳能电池包括不对称的纳米线，每个纳米线具有成角度的侧壁，因此入射光可以通过由半导体层的折射率和透明的折射率之间的差引起的光的全反射现象集中在pn结部分电极层，由于光行进距离的增加，光吸收可能增加，从而提高光电效率。此外，太阳能电池的制造方法包括蚀刻基板并且一体地形成基板以及包括不对称的纳米线的p型半导体层，每个具有成角度的侧壁，从而能够降低制造成本，并且简单且容易地制造纳米线具有成角度的侧壁。

17. 发明授权

US08445155B2 Complex power generation system and method for supplying heated water thereof 失效
标题翻译：复合发电系统及其加热水的供给方法
公开(公告)号：US08445155B2
公开(公告)日：2013-05-21
申请号：US13336525
申请日：2011-12-23
申请人： Soo Young Park
发明人： Soo Young Park
IPC分类号： H01M8/04
CPC分类号： H01M8/04014 , F24D3/18 , F24D2200/19 , F24H4/02 , F24H2240/10 , H01M8/0656 , Y02B30/12 , Y02B30/52
摘要： A complex power generation system according to an embodiment of the present invention may include a fuel cell module having a first heat exchanger and a second heat exchanger configured to generate a direct current by means of an electrochemical reaction between hydrogen and oxygen, a first cycle configured to receive hot water in a first temperature range from the first heat exchanger to supply to a heat pump, and receive hot water in a second temperature range from the heat pump to supply to the first heat exchanger, and a second cycle configured to receive hot water in a third temperature range from the heat pump to discharge hot water in a fourth temperature range through the second heat exchanger, thereby enhancing a heating performance and increasing a thermal efficiency of the overall system.
摘要翻译：根据本发明的实施例的复合发电系统可以包括具有第一热交换器和第二热交换器的燃料电池模块，所述第一热交换器和第二热交换器被配置为通过氢和氧之间的电化学反应产生直流电，在第一温度范围内接收来自第一热交换器的热水供应到热泵，并且在从热泵到第一热交换器的第二温度范围内接收热水，以及被配置为接收热量的第二循环在来自热泵的第三温度范围内的水通过第二热交换器在第四温度范围内排出热水，从而提高整个系统的加热性能和提高热效率。

18. 外观设计

USD667827S1 LED monitor 有权
标题翻译： LED显示屏
公开(公告)号：USD667827S1
公开(公告)日：2012-09-25
申请号：US29403286
申请日：2011-10-04
申请人： Soo Young Park , Kwang Ho Choi
设计人： Soo Young Park , Kwang Ho Choi

19. 发明授权

US07811790B2 Polymyxin synthetase and gene cluster thereof 有权
标题翻译：多粘菌素合成酶及其基因簇
公开(公告)号：US07811790B2
公开(公告)日：2010-10-12
申请号：US12096789
申请日：2006-11-08
申请人： Seung-Hwan Park , Jihyun F. Kim , ChoongHwan Lee , Soo-Keun Choi , Heayoung Jeong , Seong-Bin Kim , Yon Kyoung Park , Rumi Kim , Choong-Min Ryu , Soo-Young Park
发明人： Seung-Hwan Park , Jihyun F. Kim , ChoongHwan Lee , Soo-Keun Choi , Heayoung Jeong , Seong-Bin Kim , Yon Kyoung Park , Rumi Kim , Choong-Min Ryu , Soo-Young Park
IPC分类号： C12P21/06 , C12N9/00 , C12N15/00 , C12N1/20 , C07H21/04
CPC分类号： C12N15/52
摘要： The present invention relates to a polymyxin synthetase isolated from Gram-positive Paenibacillus sp. and a gene cluster encoding the same, more precisely a polymyxin synthetase isolated from Paenibacillus polymyxa E681, a gene cluster encoding thereof and a preparation method of polymyxin or its derivatives using the gene cluster. The polymyxin synthetase of the present invention can be effectively used for the increase of productivity of polymyxin and the development of a novel antibiotic.
摘要翻译：本发明涉及从革兰氏阳性Paenibacillus sp。分离的多粘菌素合成酶。和编码该基因簇的基因簇，更确切地说，是从多粘类芽孢杆菌E681分离的多粘菌素合成酶，其编码基因簇和使用该基因簇的多粘菌素或其衍生物的制备方法。本发明的多粘菌素合成酶可有效地用于提高多粘菌素的生产力和开发新的抗生素。

20. 发明授权

US07268085B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07268085B2
公开(公告)日：2007-09-11
申请号：US10749909
申请日：2003-12-30
申请人： Yu-Chang Kim , Soo-Young Park
发明人： Yu-Chang Kim , Soo-Young Park
IPC分类号： H01L21/302
CPC分类号： H01L21/76897 , H01L27/10814 , H01L27/10855 , H01L27/10885
摘要： The present invention relates to a method for forming a storage node contact of a semiconductor device. The method includes the steps of: depositing sequentially a conductive layer, a nitride layer and a polysilicon layer on a substrate having an insulating structure and a conductive structure; etching selectively the polysilicon layer, the nitride layer and the conductive layer to form a plurality of conductive patterns with a stack structure of the conductive layer and a dual hard mask including the polysilicon layer and the nitride layer; forming an insulation layer along a profile containing the conductive patterns; and etching the insulation layer by using a line type photoresist pattern as an etch mask to form a contact hole exposing the conductive structure disposed between the neighboring conductive patterns.
摘要翻译：本发明涉及形成半导体器件的存储节点接触的方法。该方法包括以下步骤：在具有绝缘结构和导电结构的衬底上依次沉积导电层，氮化物层和多晶硅层; 选择性地蚀刻多晶硅层，氮化物层和导电层以形成具有导电层的堆叠结构的多个导电图案和包括多晶硅层和氮化物层的双重硬掩模; 沿着包含导电图案的轮廓形成绝缘层; 以及通过使用线型光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，以形成露出设置在相邻导电图案之间的导电结构的接触孔。

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