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11. 发明授权

US5129942A N-substituted-3-( (2,3-dimethylmaleimido)amino)-benzenesulfonamide derivatives, and herbicidal compositions 失效
标题翻译： N-取代的3-（（（2,3-二甲基亚氨基）氨基） - 苯磺酰胺衍生物和除草剂组合物
公开(公告)号：US5129942A
公开(公告)日：1992-07-14
申请号：US667617
申请日：1991-03-08
申请人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
发明人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
IPC分类号： A01N47/36 , C07D207/50 , C07D403/12 , C07D521/00
CPC分类号： C07D521/00 , A01N47/36 , C07D207/50 , C07D403/12
摘要： Disclosed herein are N-substituted-3-[(2,3-dimethylmaleimido)amino]benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R is Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is Cl or C.sub.1 -C.sub.3 alkoxyl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-[(2,3-dimethylmaleimido)amino]benzenesulfonamide derivatives as active ingredients.

12. 发明授权

US4992093A Azolylcyclopentanol derivatives and agricultural and horticultural composition containing the same as active ingredients 失效
标题翻译：唑类环戊醇衍生物和含有与活性成分相同的农业和园艺成分
公开(公告)号：US4992093A
公开(公告)日：1991-02-12
申请号：US357422
申请日：1989-05-25
申请人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
发明人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
IPC分类号： A01N43/50 , A01N43/653 , C07D233/58 , C07D233/60 , C07D249/08 , C07D521/00
CPC分类号： C07D231/12 , A01N43/50 , A01N43/653 , C07D233/56 , C07D249/08
摘要： Disclosed herein are a derivative of azole having a usefulness in controlling plant fungal diseases, in regulating plant growth and in killing weeds, a process for producing the derivatives of azole and a composition having a fungicidal activity, a plant growth regulating activity and a herbicidal activity and containing the derivative of azole as an active ingredient for use in agriculture and horticulture.

13. 发明授权

US4973353A 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide derivatives and herbicidal composition containing the same 失效
标题翻译： 1,5-二苯基-1H-1,2,4-三唑-3-甲酰胺衍生物和含有它们的除草组合物
公开(公告)号：US4973353A
公开(公告)日：1990-11-27
申请号：US162699
申请日：1988-03-01
申请人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07C205/34 , C07C205/35 , C07C217/76 , C07D249/10
CPC分类号： C07C205/34 , A01N43/653 , C07C205/35 , C07C217/76 , C07D249/10
摘要： Disclosed herein is a derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the formula (I): ##STR1## wherein R is a straight-chain alkyl group having 1 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a branched alkyl group having 3 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a cyclic alkyl group having 3 to 10 carbon atoms, an alkyl group having 1 to 3 carbon atoms which is substituted with an alicyclic structure having 3 to 7 carbon atoms, a phenyl group or an aralkyl group having 7 to 9 carbon atoms; X.sup.1 is a halogen or an alkyl group having 1 to 3 carbon atoms; X.sup.2 is a hydrogen, a halogen or an alkyl group having 1 to 3 carbon atoms; Y.sup.1 is a hydrogen or a fluorine; and Y.sup.2 is a hydrogen or a fluorine, and the herbicidal compositions containing said derivatives as active ingredient therefor.The derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the formula (I) of the present invention is the compound having high herbicidal activity and also showing excellent selectivity for killing weeds alone without doing any serious harm to the crops such as rice, wheat and corn.

14. 发明授权

US4902805A Derivatives of dihydrotriazole, and herbicidal compositions containing the same as an active ingredient 失效
标题翻译：二氢三唑衍生物和含有其作为活性成分的除草组合物
公开(公告)号：US4902805A
公开(公告)日：1990-02-20
申请号：US820948
申请日：1986-01-21
申请人： Takafumi Shida , Takeo Watanabe , Shiro Yamazaki , Hiroyasu Shinkawa , Keigo Satake
发明人： Takafumi Shida , Takeo Watanabe , Shiro Yamazaki , Hiroyasu Shinkawa , Keigo Satake
IPC分类号： A01N43/653 , C07D249/10 , C07D405/04
CPC分类号： C07D405/04 , A01N43/653 , C07D249/10
摘要： Disclosed herein are a derivative of dihydrotriazole represented by the general formula (I): ##STR1## wherein R.sup.1 represents an amino group, lower alkoxy group, or lower alkyl amino group, R.sup.2 represents a hydrogen atom, halogen atom, or lower alkyl group and R.sup.3 represents a hydrogen atom, lower alkyl group, benzyl group, furyl group, phenyl group or phenyl group substituted with a halogen atom, hydroxyl group, carboxyl group, methoxycarbonyl group, lower alkyl group or lower alkoxy group, and a herbicidal composition containing as an active ingredient at least one of the derivatives of dihydrotriazole.
摘要翻译：本文公开了由通式（I）表示的二氢三唑衍生物：其中R 1表示氨基，低级烷氧基或低级烷基氨基，R 2表示氢原子，卤原子或低级烷基，R 3表示氢原子，低级烷基，苄基，呋喃基，苯基或被卤素原子，羟基，羧基，甲氧基羰基，低级烷基或低级烷氧基取代的苯基，除草组合物，其含有作为活性成分的二氢三唑衍生物中的至少一种。

15. 发明授权

US4897106A Derivative of 4,5-dihydro-1H-1,2,4-triazole-3-carboxamide, and herbicidal composition containing the derivative 失效
标题翻译： 4,5-二氢-1H-1,2,4-三唑-3-甲酰胺的衍生物和含有该衍生物的除草组合物
公开(公告)号：US4897106A
公开(公告)日：1990-01-30
申请号：US42165
申请日：1987-04-24
申请人： Takafumi Shida , Yoshikazu Kubota , Isao Ichinose , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Yoshikazu Kubota , Isao Ichinose , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07D249/10
CPC分类号： C07C251/72 , A01N43/653 , C07D249/10
摘要： Disclosed herein are a derivative of 4,5-dihydro-1H-1,2,4-triazole-3-carboxamide represented by the formula (Io): ##STR1## wherein R.sup.1 represents a hydrogen atom, a halogen atom, an alkyl group of 1 to 3 carbon atoms or an alkoxy group of 1 to 3 carbon atoms, R.sup.2 represents a hydrogen atom or a halogen atom and R represents a straight-chain alkyl group of 1 to 8 carbon atoms, a branched-chain alkyl group of 3 to 8 carbon atoms, a cycloalkyl group of 3 to 8 carbon atoms, a (cycloalkyl)alkyl group of 4 to 8 carbon atoms, an alkenyl group of 3 to 8 carbon atoms, an alkynyl group of 3 to 8 carbon atoms, an alkoxyalkyl group of 3 to 8 carbon atoms, a phenyl group, an aralkyl group of 7 to 9 carbon atoms, a phenyl group substituted by halogen atom(s) or an alkyl group of 2 to 8 carbon atoms which is substituted by fluorine atom(s), an intermediate for producing the derivative and a herbicidal composition containing the derivative as an active ingredient.

16. 发明授权

US08507364B2 N-type group III nitride-based compound semiconductor and production method therefor 有权
公开(公告)号：US08507364B2
公开(公告)日：2013-08-13
申请号：US12453743
申请日：2009-05-20
申请人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
发明人： Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
IPC分类号： H01L21/20
CPC分类号： C30B9/12 , C30B9/10 , C30B29/403
摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

17. 发明授权

US08361222B2 Method for producing group III nitride-based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法
公开(公告)号：US08361222B2
公开(公告)日：2013-01-29
申请号：US12081943
申请日：2008-04-23
申请人： Shiro Yamazaki , Seiji Nagai , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Seiji Nagai , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B15/14 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12 , C30B29/406
摘要： In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.
摘要翻译：在通过助熔剂制造GaN的情况下，可以防止在GaN自立基板的氮面上沉积杂晶，原料的浪费。例示了四个坩埚和GaN自立衬底的布置。在图如图1A所示，自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。在图如图1B所示，自立基板的氮面与坩埚的水平方向的平坦的内壁紧密接触，通过夹具固定基板。在图如图1C所示，在坩埚的平坦底部设置夹具，通过夹具固定两个GaN自立基板，使得基板的氮面彼此紧密接触。在图如图1D所示，在坩埚的平坦底部设置夹具，并且将GaN自立基板固定在夹具上，使得基板的氮面被夹具覆盖。将熔融的镓和钠的助熔剂混合物装入每个坩埚中，并且在加压氮气下在镓面上生长GaN单晶。

18. 发明授权

US08343239B2 Group III nitride semiconductor manufacturing system 有权
公开(公告)号：US08343239B2
公开(公告)日：2013-01-01
申请号：US12289257
申请日：2008-10-23
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： H01L21/02 , C30B9/00 , C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , Y10T29/41 , Y10T117/10
摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.

19. 发明申请

US20120217510A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND 审中-公开
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US20120217510A1
公开(公告)日：2012-08-30
申请号：US13468486
申请日：2012-05-10
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+-layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1.
摘要翻译：制备III族氮化物化合物的发光半导体器件的方法包括形成满足式（Al x Ga Ga 1-x 3）y 3 In 1-y 3 N的高载流子浓度N +层，其中0＆nlE; x3＆nlE; 1,0

20. 发明申请

US20090155580A1 Production Methods of Semiconductor Crystal and Semiconductor Substrate 审中-公开
标题翻译：半导体晶体和半导体基板的生产方法
公开(公告)号：US20090155580A1
公开(公告)日：2009-06-18
申请号：US12225389
申请日：2007-04-05
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/02 , B32B9/00 , B32B1/00
CPC分类号： C30B29/403 , C30B9/00 , H01L33/0075 , Y10T428/265 , Y10T428/266
摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.
摘要翻译：提供适合于制造电子器件或光学器件的高品质的半导体衬底。本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

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