会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 15. 发明申请
    • INDIUM TIN OXIDE SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM FABRICATED USING THE SAME
    • 使用其制造的印制氧化铅溅射靶和透明导电膜
    • US20110102722A1
    • 2011-05-05
    • US12915899
    • 2010-10-29
    • Shin Hyuk KANGJun Ho CHOIHwang Yong GOSang Cheol JUNG
    • Shin Hyuk KANGJun Ho CHOIHwang Yong GOSang Cheol JUNG
    • G02F1/1343C23C14/08C23C14/35H01B1/02
    • C23C14/3414C23C14/086G02F1/13439
    • An indium tin oxide sputtering target includes indium oxide, tin oxide, and gallium. The content of tin atoms is 5 to 15 atomic percent of the total amount of indium and tin atoms, and the content of gallium atoms is 0.5 to 7 atomic percent of the total amount of indium, tin, and gallium atoms. A method of fabricating an indium tin oxide transparent conductive film includes depositing the transparent conductive film by sputtering the sputtering target. The indium tin oxide transparent conductive film having high durability can be fabricated by depositing an amorphous transparent conductive film by sputtering the sputtering target at a first temperature, patterning the deposited amorphous transparent conductive film by etching it using a weak acid, and crystallizing the patterned amorphous transparent conductive film at a second temperature higher than the first temperature. A crystallization temperature ranges from 150° C. to 210° C., or from 170° C. to 210° C.
    • 铟锡氧化物溅射靶包括氧化铟,氧化锡和镓。 锡原子的含量为铟和锡原子总量的5〜15原子%,镓原子的含量为铟,锡,镓原子总量的0.5〜7原子%。 一种制造氧化铟锡透明导电膜的方法包括通过溅射溅射靶沉积透明导电膜。 具有高耐久性的氧化铟锡透明导电膜可以通过在第一温度下溅射溅射靶而沉积非晶形透明导电膜来制造,通过使用弱酸蚀刻淀积的非晶形透明导电膜,并使图案化的非晶 在比第一温度高的第二温度下的透明导电膜。 结晶温度为150℃至210℃,或170℃至210℃。