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11. 发明授权

US08963235B1 Trench power device and semiconductor structure thereof 有权
标题翻译：沟槽功率器件及其半导体结构
公开(公告)号：US08963235B1
公开(公告)日：2015-02-24
申请号：US14063061
申请日：2013-10-25
申请人： Sinopower Semiconductor, Inc.
发明人： Po-Hsien Li
IPC分类号： H01L29/66 , H01L29/423 , H01L29/47 , H01L29/78
CPC分类号： H01L29/47 , H01L29/407 , H01L29/66734 , H01L29/7806 , H01L29/7813 , H01L29/8725
摘要： A semiconductor structure of a trench power device comprises a base, an insulating layer, and a source conductive layer. The base includes a first trench etched from the top surface thereof, and two portions of the top surface arranged at two opposite sides of the first trench are respectively defined as two top contacting surfaces. Part of the first trench is filled with the insulating layer, and two inner walls of a non-filled portion of the first trench are respectively defined as two side contacting surfaces without contacting the insulating layer. The source conductive layer is embedded in the insulating layer. Thus, when a metallic layer is integrally formed on the semiconductor structure and connects the top contacting surfaces and the side contacting surfaces, the top contacting surfaces and the side contacting surfaces are configured to be a Schottky barrier interface.
摘要翻译：沟槽功率器件的半导体结构包括基极，绝缘层和源极导电层。基底包括从其顶表面蚀刻的第一沟槽，并且布置在第一沟槽的两个相对侧的顶表面的两个部分分别限定为两个顶部接触表面。第一沟槽的一部分填充有绝缘层，并且第一沟槽的未填充部分的两个内壁分别被限定为不接触绝缘层的两个侧接触表面。源极导电层嵌入绝缘层。因此，当在半导体结构上整体形成金属层并连接顶部接触表面和侧面接触表面时，顶部接触表面和侧面接触表面被构造为肖特基势垒界面。

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