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11. 发明授权

US801478A Venetian blind. 失效
标题翻译： VENETIAN BLIND。
公开(公告)号：US801478A
公开(公告)日：1905-10-10
申请号：US1905259544
申请日：1905-05-09
申请人： SCHUBERT FRIEDRICH HERMANN , SCHUBERT OTTO HERMANN
发明人： SCHUBERT FRIEDRICH HERMANN , SCHUBERT OTTO HERMANN
CPC分类号： E04F10/10

12. 发明授权

US08502266B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08502266B2
公开(公告)日：2013-08-06
申请号：US12923195
申请日：2010-09-08
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个或更多量子阱层交替堆叠。量子势垒层的净极化小于或等于量子阱层的净极化。可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

13. 发明授权

US08441635B2 Mass sensor 有权
标题翻译：质量传感器
公开(公告)号：US08441635B2
公开(公告)日：2013-05-14
申请号：US12730166
申请日：2010-03-23
申请人： Mathias M. Schubert , Eva Schubert , Tino Hofmann , Daniel Schmidt
发明人： Mathias M. Schubert , Eva Schubert , Tino Hofmann , Daniel Schmidt
IPC分类号： G01N15/02
CPC分类号： G01N15/02
摘要： A mass sensor is provided for determining the mass of small objects. The mass sensor has a plurality of nanostructures attached to a substrate. The nanostructures and the substrate are irradiated with an electromagnetic wave to determine a first mechanical-electromagnetic resonant frequency of the mass sensor. After a particle is attached to the nanostructures, the substrate and the nanostructures to which the particle is attached are irradiated with an electromagnetic wave to determine a second mechanical-electromagnetic resonant frequency of the mass sensor. A mass of the particle is determined based on a difference between the first and second mechanical-electromagnetic resonant frequencies.
摘要翻译：提供质量传感器用于确定小物体的质量。质量传感器具有附接到基板的多个纳米结构。用电磁波照射纳米结构和衬底以确定质量传感器的第一机械 - 电磁共振频率。在颗粒附着到纳米结构之后，用电磁波照射基板和附着有颗粒的纳米结构，以确定质量传感器的第二机械 - 电磁共振频率。基于第一和第二机械 - 电磁共振频率之间的差异确定颗粒的质量。

14. 发明申请

US20120132887A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120132887A1
公开(公告)日：2012-05-31
申请号：US13064186
申请日：2011-03-09
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/06
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层，并且具有多个量子势垒层和一个或多个量子阱层交替堆叠的结构; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层。电子阻挡层具有超晶格结构，其中具有不同组成的两层或更多层交替堆叠。在多个量子势垒层中，材料，具有对应于超晶格结构的平均组成的组成的材料和与电子阻挡层相邻的量子势垒层的材料之间的净偏振失配的绝对值小于具有等于材料的带隙能量和不同于其的组成的Al x G 1-x N（0

15. 发明申请

US20110120554A1 ULTRA-LOW REFLECTANCE BROADBAND OMNI-DIRECTIONAL ANTI-REFLECTION COATING 审中-公开
标题翻译：超低反射宽带OMNI-DIRECTIONAL抗反射涂层
公开(公告)号：US20110120554A1
公开(公告)日：2011-05-26
申请号：US12736278
申请日：2009-03-27
申请人： Sameer Chhajed , Jong Kyu Kim , Shawn-Yu Lin , Mei-Ling Kuo , Frank W. Mont , David J. Poxson , E. Fred Schubert , Martin F. Schubert
发明人： Sameer Chhajed , Jong Kyu Kim , Shawn-Yu Lin , Mei-Ling Kuo , Frank W. Mont , David J. Poxson , E. Fred Schubert , Martin F. Schubert
IPC分类号： H01L31/0232 , B32B7/02 , B32B18/00 , G02B1/11 , H01L31/18 , B82Y30/00
CPC分类号： H01L31/02168 , C09D1/00 , C09D5/006 , G02B1/115 , H01L31/0203 , Y02E10/50 , Y10T428/24124 , Y10T428/24975 , Y10T428/249924 , Y10T428/249962
摘要： An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.
摘要翻译：抗反射涂层的平均总反射率在400-1100nm波长范围内，平均全反射率小于10％，例如小于5.9％，例如4.9至5.9％，入射角范围为0 相对于防反射涂层的表面法线为-90度。抗反射涂层在400-1600nm的整个波长范围内具有小于10％的总反射率，例如小于6％，例如小于4％，并且0- 相对于防反射涂层的表面法线为70度。

16. 发明授权

US6082944A Resealable beverage container and top therefor 有权
标题翻译：可重复使用的饮料容器及其顶部
公开(公告)号：US6082944A
公开(公告)日：2000-07-04
申请号：US240841
申请日：1999-01-25
申请人： Henry C. Bachmann , Steven T. Cook , James R. Schubert , John F. Schubert , Lori E. Strong
发明人： Henry C. Bachmann , Steven T. Cook , James R. Schubert , John F. Schubert , Lori E. Strong
IPC分类号： B21D51/38 , B21D51/46 , B21D51/50 , B65D41/04 , B65D41/16 , B65D53/02
CPC分类号： B65D41/0442 , B21D51/38 , B21D51/50 , B65D41/04 , B65D53/02 , B65D7/04 , B65D2543/00092 , B65D2543/00277 , B65D2543/00527 , B65D2543/00537 , B65D2543/00972 , B65D2543/00981
摘要： A resealable can end is provided including a neck member and hat member which can be sealed onto and removed from the neck member of the end, and is capable of containing product under pressure if desired. This end can be added, as by a conventional seam, to a metal container body to obtain resealing containment of partial contents retained in the container, and to provide an improved mouth construction (or pour opening) for better pouring and for comfortable direct drinking from the container. Also disclosed are improved methods of and apparatus for making such a resealable hat and-neck type-of container end.
摘要翻译：提供了可重新密封的罐端，包括颈部件和帽部件，该颈部件和帽部件可以密封在端部的颈部部件上并从该部件的颈部部件移除，并且如果需要的话能够在压力下容纳产品。这一点可以像传统的接缝一样添加到金属容器主体上，以获得保持在容器中的部分内容物的重新密封容纳物，并提供改进的口部结构（或倾倒开口），以便更好地浇注和舒适的直接饮用容器还公开了用于制造这种可重新密封的帽颈型容器端的改进方法和装置。

17. 发明授权

US2772930A Bearings 失效
标题翻译：轴承
公开(公告)号：US2772930A
公开(公告)日：1956-12-04
申请号：US30038252
申请日：1952-07-23
申请人： SCHUBERT SR OTTO , SCHUBERT JR OTTO
发明人： SCHUBERT SR OTTO , SCHUBERT JR OTTO
IPC分类号： F16C33/20
CPC分类号： F16C33/201

18. 发明授权

US1161534A Power-operated plow. 失效
公开(公告)号：US1161534A
公开(公告)日：1915-11-23
申请号：US1688215
申请日：1915-03-25
申请人： SCHUBERT OTTO , SCHUBERT ALFRED
发明人： SCHUBERT OTTO , SCHUBERT ALFRED
CPC分类号： A01B3/68

19. 发明授权

US08914919B1 Fixture use prevention system 有权
标题翻译：夹具使用预防系统
公开(公告)号：US08914919B1
公开(公告)日：2014-12-23
申请号：US13848012
申请日：2013-03-20
申请人： Jerry Schubert , Teresa Schubert
发明人： Jerry Schubert , Teresa Schubert
IPC分类号： A47K13/00 , A47K13/24
CPC分类号： A47K13/242 , E03C1/23
摘要： A device to prevent the use of newly placed toilets in buildings under construction by securing the toilet seat and toilet lid of a toilet in a fixed position to the toilet bowl. The toilet use prevention system includes a locking mechanism to secure an L-shape lid retainer and a J-shape bowl clamp in a position to prevent a toilet from being opened. Another embodiment prevents use of faucets in sinks and tubs.
摘要翻译：一种通过将马桶座圈和马桶的马桶盖固定在马桶上的固定位置来防止在建筑物中使用新安置的厕所的装置。厕所使用预防系统包括锁定机构，用于将L形盖保持器和J形碗夹固定在防止马桶打开的位置。另一个实施例防止在水槽和浴缸中使用水龙头。

20. 发明授权

US08546846B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08546846B2
公开(公告)日：2013-10-01
申请号：US13064186
申请日：2011-03-09
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , F. Fred Schubert , Yongio Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层，并且具有多个量子势垒层和一个或多个量子阱层交替堆叠的结构; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层。电子阻挡层具有超晶格结构，其中具有不同组成的两层或更多层交替堆叠。在多个量子势垒层中，具有与超晶格结构的平均组成对应的组成的材料和与电子阻挡层相邻的量子势垒层的材料之间的净偏振失配的绝对值小于2 / 3的具有等于材料的带隙能量和与其不同的组成的Al x G 1-x N（0

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