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    • 12. 发明授权
    • System and method for implementing a virtual metrology advanced process control platform
    • 实现虚拟计量先进过程控制平台的系统和方法
    • US08437870B2
    • 2013-05-07
    • US12478956
    • 2009-06-05
    • Po-Feng TsaiAndy TsenJin-Ning Sung
    • Po-Feng TsaiAndy TsenJin-Ning Sung
    • G06F17/50
    • G01R31/2894H01L22/12H01L22/20
    • System and method for implementing a VM APC platform are described. In one embodiment, the VM APC system comprises a process tool for processing a plurality of wafers, a metrology tool for measuring a sample wafer of the plurality of wafers and generating actual metrology data therefor, and a VM model for predicting metrology data for each of the plurality of wafers. The actual metrology data is received from the metrology tool and used to update the VM model. Key variables of the virtual metrology model are updated only in response to a determination that the VM model is inaccurate and parameters of the VM model are updated responsive to receipt of the actual metrology data for the sample wafer of the plurality of wafers. The system also includes an APC controller for receiving the predicted metrology data and the actual metrology data and controlling an operation of the process tool based on the received data.
    • 描述了实现VM APC平台的系统和方法。 在一个实施例中,VM APC系统包括用于处理多个晶片的处理工具,用于测量多个晶片中的样品晶片并产生其实际测量数据的计量工具,以及用于预测每个晶片的测量数据的VM模型 多个晶片。 实际计量数据从计量工具中接收并用于更新VM模型。 虚拟测量模型的关键变量仅在响应于确定VM模型不准确并且响应于接收到多个晶片的样本晶片的实际测量数据来更新VM模型的参数而被更新。 该系统还包括用于接收预测计量数据和实际计量数据的APC控制器,并且基于接收到的数据来控制处理工具的操作。
    • 13. 发明授权
    • System and method for data mining and feature tracking for fab-wide prediction and control
    • 用于晶圆厂预测和控制的数据挖掘和特征跟踪的系统和方法
    • US08406912B2
    • 2013-03-26
    • US12823351
    • 2010-06-25
    • Jui-Long ChenChia-Tong HoPo-Feng TsaiHui-Yun ChaoJong-I Mou
    • Jui-Long ChenChia-Tong HoPo-Feng TsaiHui-Yun ChaoJong-I Mou
    • G06F19/00
    • G05B19/41875G05B2219/32191G05B2219/35082Y02P90/22Y02P90/265
    • System and method for data mining and feature tracking for fab-wide prediction and control are described. One embodiment is a system comprising a database for storing raw wafer manufacturing data; a data mining module for processing the raw wafer manufacturing data to select the best data therefrom in accordance with at least one of a plurality of knowledge-, statistic-, and effect-based processes; and a feature tracking module associated with the data mining module and comprising a self-learning model wherein a sensitivity of the self-learning model is dynamically tuned to meet real-time production circumstances, the feature tracking module receiving the selected data from the data mining module and generating prediction and control data therefrom; wherein the prediction and control data are used to control future processes in the wafer fabrication facility.
    • 描述了用于晶圆厂预测和控制的数据挖掘和特征跟踪的系统和方法。 一个实施例是包括用于存储原始晶片制造数据的数据库的系统; 数据挖掘模块,用于根据多个基于知识,统计和效果的过程中的至少一个来处理原始晶片制造数据以从其中选择最佳数据; 以及与所述数据挖掘模块相关联并且包括自学习模型的特征跟踪模块,其中自学习模型的灵敏度被动态调整以满足实时生产环境,所述特征跟踪模块从所述数据挖掘接收所选择的数据 模块并从其生成预测和控制数据; 其中预测和控制数据用于控制晶片制造设备中的未来工艺。
    • 17. 发明授权
    • System and method for implementing multi-resolution advanced process control
    • 实现多分辨率高级过程控制的系统和方法
    • US08394719B2
    • 2013-03-12
    • US13106711
    • 2011-05-12
    • Andy TsenJin-Ning SungPo-Feng TsaiJong-I MouYen-Wei Cheng
    • Andy TsenJin-Ning SungPo-Feng TsaiJong-I MouYen-Wei Cheng
    • H01L21/302H01L21/461
    • H01L22/20G05B19/41875H01L22/12Y02P90/22Y02P90/26
    • System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method including obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer. A process variable of the process is modeled as a function of the low resolution metrology data to generate a low-resolution process model and the process variable is modeled as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.
    • 描述了实现多分辨率高级过程控制(APC)的系统和方法。 一个实施例是一种方法,包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据。 该过程的过程变量被模型化为低分辨率度量数据的函数,以生成低分辨率过程模型,并且将过程变量建模为高分辨率度量数据的函数以生成高分辨率过程模型。 该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合,以生成多分辨率过程模型,其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应,以控制过程模块的性能。
    • 19. 发明申请
    • SYSTEM AND METHOD FOR IMPLEMENTING MULTI-RESOLUTION ADVANCED PROCESS CONTROL
    • 用于实施多分辨率高级过程控制的系统和方法
    • US20100255613A1
    • 2010-10-07
    • US12416595
    • 2009-04-01
    • Andy TsenJin-Ning SungPo-Feng TsaiJong-I Mou
    • Andy TsenJin-Ning SungPo-Feng TsaiJong-I Mou
    • H01L21/66H01L21/306
    • G05B19/41875H01L22/12H01L22/20Y02P90/22Y02P90/26
    • System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method for fabricating ICs from a semiconductor wafer comprising performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further comprises removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.
    • 描述了用于实现多分辨率高级过程控制(“APC”)的系统和方法。 一个实施例是一种用于从半导体晶片制造IC的方法,包括在半导体晶片上执行第一工艺; 进行第一次测量,表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据,其中所述计量学校准数据包括有效部分和非有效部分。 该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型,其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。
    • 20. 发明申请
    • METHOD AND APPARATUS FOR ADVANCED PROCESS CONTROL
    • 高级过程控制的方法和装置
    • US20100234970A1
    • 2010-09-16
    • US12404120
    • 2009-03-13
    • Po-Feng TsaiAndy Tsen
    • Po-Feng TsaiAndy Tsen
    • G05B19/04G05B13/02
    • G05B13/024H01L22/12H01L22/20
    • A method includes: initializing first and second variables; operating equipment based on the variables; measuring first and second parameters; determining a new value for the first variable based on the first parameter, and calculating a new value for the second variable based on the second parameter and the current value of the second variable; and repeating the operating, measuring, determining and calculating. According to a different aspect, an apparatus includes a computer-readable medium storing a computer program. When executed, the program causes: initializing of first and second variables; operating equipment based on the variables; receiving measured first and second parameters; determining a new value for the first variable based on the first parameter, and calculating a new value for the second variable based on the second parameter and the current value of the second variable; and repeating the operating, measuring, determining and calculating.
    • 一种方法包括:初始化第一和第二变量; 基于变量的操作设备; 测量第一和第二参数; 基于第一参数确定第一变量的新值,并且基于第二参数和第二变量的当前值来计算第二变量的新值; 并重复操作,测量,确定和计算。 根据不同方面,一种装置包括存储计算机程序的计算机可读介质。 程序执行时,会导致:初始化第一个和第二个变量; 基于变量的操作设备; 接收测量的第一和第二参数; 基于第一参数确定第一变量的新值,并且基于第二参数和第二变量的当前值来计算第二变量的新值; 并重复操作,测量,确定和计算。