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11. 发明申请

US20110294287A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING DUAL FULLY-SILICIDED GATE 审中-公开
标题翻译：制造具有双重全硅酸盐的半导体器件的方法
公开(公告)号：US20110294287A1
公开(公告)日：2011-12-01
申请号：US13208772
申请日：2011-08-12
申请人： Chin-Hsiang Lin , Chia-Jung Hsu , Li-Wei Cheng , Hsien-Liang Meng , Ming-Te Wei , Che-Hua Hsu
发明人： Chin-Hsiang Lin , Chia-Jung Hsu , Li-Wei Cheng , Hsien-Liang Meng , Ming-Te Wei , Che-Hua Hsu
IPC分类号： H01L21/263
CPC分类号： H01L21/823835 , H01L21/28097 , H01L29/4975 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： A method of manufacturing the semiconductor device having a dual fully-silicided gate includes the following steps. A substrate having a first transistor and a second transistor formed thereon is provided, wherein the first transistor includes a first gate and a first source/drain and the second transistor includes a second gate and a second source/drain. The gate height of the first gate is different from that of the second gate. A first silicidation process is performed to respectively transform the first gate and the second gate into a first silicided gate and a second silicided gate simultaneously, wherein the material of the first silicided gate is different from that of the second silicided gate.
摘要翻译：制造具有双全硅化物栅的半导体器件的方法包括以下步骤。提供了具有形成在其上的第一晶体管和第二晶体管的衬底，其中所述第一晶体管包括第一栅极和第一源极/漏极，所述第二晶体管包括第二栅极和第二源极/漏极。第一栅极的栅极高度与第二栅极的栅极高度不同。执行第一硅化处理以分别将第一栅极和第二栅极转换成第一硅化栅极和第二硅化物栅极，其中第一硅化栅极的材料与第二硅化物栅极的材料不同。

12. 发明申请

US20070075378A1 METAL OXIDE SEMICONDUCTOR TRANSISTOR DEVICE 有权
标题翻译：金属氧化物半导体晶体管器件
公开(公告)号：US20070075378A1
公开(公告)日：2007-04-05
申请号：US11163124
申请日：2005-10-05
申请人： Huan-Shun Lin , Chen-Hua Tsai , Wei-Tsun Shiau , Hsien-Liang Meng , Hung-Lin Shih
发明人： Huan-Shun Lin , Chen-Hua Tsai , Wei-Tsun Shiau , Hsien-Liang Meng , Hung-Lin Shih
IPC分类号： H01L29/94
CPC分类号： H01L29/7848 , H01L29/1054 , H01L29/66636
摘要： A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gate and a gate dielectric layer disposed between the gate and the substrate. The spacer is disposed on the sidewall of the gate structure. The source/drain region is disposed in the substrate on two sides of the spacer. The barrier layer is disposed around the source/drain region. The source/drain region and the barrier layer are fabricated using an identical material. However, the doping concentration of the source/drain region is larger than the doping concentration of the barrier layer.
摘要翻译：提供了一种金属氧化物半导体（MOS）晶体管器件。 MOS晶体管器件包括衬底，栅极结构，间隔物，源极/漏极区域和势垒层。栅极结构设置在基板上。栅极结构包括设置在栅极和衬底之间的栅极和栅极电介质层。间隔件设置在栅极结构的侧壁上。源极/漏极区域设置在衬底中的间隔物的两侧。阻挡层设置在源/漏区周围。源极/漏极区域和势垒层使用相同的材料制造。然而，源极/漏极区域的掺杂浓度大于势垒层的掺杂浓度。

13. 发明授权

US06204147B1 Method of manufacturing shallow trench isolation 有权
标题翻译：制造浅沟槽隔离的方法
公开(公告)号：US06204147B1
公开(公告)日：2001-03-20
申请号：US09270030
申请日：1999-03-16
申请人： Chun-Liang Liu , Shih-Ming Lan , Hsien-Liang Meng
发明人： Chun-Liang Liu , Shih-Ming Lan , Hsien-Liang Meng
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A method for manufacturing a shallow trench isolation. A substrate is provided, wherein the substrate has a pad oxide on the substrate and a silicon nitride layer on the pad oxide layer, and a trench penetrates through the silicon oxide layer and the pad oxide layer and into the substrate. A first oxide layer is conformally formed on the silicon nitride layer and in the trench. A rapid thermal process is performed. A second oxide layer is formed on the oxide layer to fill the trench. Portions of the first and the second oxide layers are removed to expose the silicon nitride layer.
摘要翻译：一种用于制造浅沟槽隔离的方法。提供了一种衬底，其中衬底在衬底上具有焊盘氧化物，并且衬垫氧化物层上具有氮化硅层，并且沟槽穿过氧化硅层和焊盘氧化物层并进入衬底。第一氧化物层在氮化硅层和沟槽中共形地形成。进行快速热处理。在氧化物层上形成第二氧化物层以填充沟槽。去除第一和第二氧化物层的部分以露出氮化硅层。

14. 发明授权

US5963830A Method of forming a TiN/W barrier layer for a hot Al plug 失效
标题翻译：形成用于热铝塞的TiN / W阻挡层的方法
公开(公告)号：US5963830A
公开(公告)日：1999-10-05
申请号：US960108
申请日：1997-10-27
申请人： Pei-Jan Wang , Yeong-Ruey Shiue , Yung-Tsun Lo , Hsien-Liang Meng
发明人： Pei-Jan Wang , Yeong-Ruey Shiue , Yung-Tsun Lo , Hsien-Liang Meng
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76868 , H01L21/76882
摘要： The present invention relates to a method of forming a barrier metal layer for a hot Al plug and its structure and more particularly to remarkably ameliorate the performance of a barrier metal layer preventing Al metal used as an interconnection layer from diffusing into a silicon substrate. A barrier metal layer according to the present invention is a stacked structure comprising a top layer of Tungsten (W) formed by a Chemical Vapor Deposition (CVD) method and a bottom layer of TiN. Then, a Al interconnection layer deposited at high temperature fills a plug and finishes a plug structure having advantages of low manufacturing cost and full prevention of Al diffusion.
摘要翻译：本发明涉及一种形成用于热铝塞及其结构的阻挡金属层的方法，更具体地，显着地改善了防止用作互连层的Al金属扩散到硅衬底中的阻挡金属层的性能。根据本发明的阻挡金属层是包括通过化学气相沉积（CVD）法形成的钨（W）的顶层和TiN的底层的层叠结构。然后，在高温下沉积的Al互连层填充塞子并完成具有低制造成本和完全防止Al扩散的优点的插塞结构。

15. 发明申请

US20140040215A1 METHOD FOR ENCODING A MESH MODEL, ENCODED MESH MODEL AND METHOD FOR DECODING A MESH MODEL 有权
标题翻译：编码网格模型的方法，编码网格模型和解码网格模型的方法
公开(公告)号：US20140040215A1
公开(公告)日：2014-02-06
申请号：US14111171
申请日：2011-04-12
申请人： Kangying Cai , Jiang Tian , Wei Liang Meng
发明人： Kangying Cai , Jiang Tian , Wei Liang Meng
IPC分类号： G06F17/30
CPC分类号： G06F17/30371 , G06T9/005 , G06T9/40 , G06T17/005
摘要： Many 3D mesh models have a large number of small connected components that are repeated in various positions, scales and orientations. The respective positions are defined by the position of at least one reference point per component. For an enhanced encoding of the positions of the respective reference points, a given space is divided into segments and the number of points lying in each particular segment is determined. When a cell with at least n points is subdivided into child cells, an indication is added indicating if all points of a parent are in only one child cell. If so, the index of the only non-empty child node is encoded, while otherwise the number of points in one of the two child cells is decremented and encoded. The invention avoids non-effective subdivisions of a cell, and therefore improves the compression efficiency.
摘要翻译：许多3D网格模型具有大量的小型连接部件，可以在各种位置，尺度和方向上重复使用。各个位置由每个组件至少一个参考点的位置定义。对于各个参考点的位置的增强编码，给定空间被划分成段，并且确定位于每个特定段中的点的数量。当具有至少n个点的小区被细分为子小区时，添加指示，指示父节点的所有点是否仅在一个子小区中。如果是这样，唯一的非空子节点的索引被编码，否则两个子单元之一中的点的数量被递减并被编码。本发明避免了电池的非有效细分，从而提高了压缩效率。

16. 发明申请

US20120290872A1 MACHINE-TO-MACHINE PLATFORM SERVICE PROCESSING METHOD AND MACHINE-TO-MACHINE PLATFORM 有权
标题翻译：机器到机器平台服务处理方法和机器到机器平台
公开(公告)号：US20120290872A1
公开(公告)日：2012-11-15
申请号：US13574771
申请日：2011-03-17
申请人： Yue He , Gang Zheng , Changjun Zhao , Liang Meng
发明人： Yue He , Gang Zheng , Changjun Zhao , Liang Meng
IPC分类号： G06F15/16 , G06F11/20
CPC分类号： H04W4/005 , H04W4/70
摘要： A method for processing Machine-to-Machine (M2M) platform services and a M2M platform are disclosed. The method comprises: receiving a service request sent by a terminal; selecting a corresponding application according to capacity required by the service request; and forwarding the service request to the corresponding application, and feeding back a response result of the application to the terminal. The method for processing M2M platform services and the M2M platform in accordance with the present implement a platform for providing a variety applications for users.
摘要翻译：公开了一种用于处理机器对机器（M2M）平台服务和M2M平台的方法。该方法包括：接收终端发送的服务请求; 根据服务请求所需的容量选择相应的应用; 并将所述服务请求转发到相应的应用，并将所述应用的响应结果反馈给所述终端。 M2M平台服务处理方法和M2M平台按照现在实现为用户提供各种应用的平台。

17. 发明授权

US6124204A Method of removing copper oxide within via hole 失效
标题翻译：去除通孔内氧化铜的方法
公开(公告)号：US6124204A
公开(公告)日：2000-09-26
申请号：US112951
申请日：1998-07-09
申请人： Shih-Ming Lan , Ho-Sung Liao , Hsien-Liang Meng
发明人： Shih-Ming Lan , Ho-Sung Liao , Hsien-Liang Meng
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/768 , H01L21/44
CPC分类号： H01L21/02063 , H01L21/76814 , H01L21/76838 , H01L21/02068 , Y10S438/906
摘要： A method of removing a copper oxide layer within a via hole. A copper layer is formed. A dielectric layer is formed on the copper layer. A via hole is formed to penetrate through the dielectric layer and expose a part of the copper layer within the via hole. The exposed copper layer reacts with oxygen in air to form a copper oxide layer. Using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, the copper oxide layer is removed.
摘要翻译：在通孔内除去氧化铜层的方法。形成铜层。在铜层上形成介电层。形成通孔以穿透电介质层，并使通孔内的铜层的一部分露出。暴露的铜层与空气中的氧气反应形成氧化铜层。使用1,1,1,5,5,5-六氟-2,4-戊二酮，除去氧化铜层。

18. 发明授权

US08839022B2 Machine-to-machine platform service processing method and machine-to-machine platform 有权
标题翻译：机对机平台服务处理方法和机对机平台
公开(公告)号：US08839022B2
公开(公告)日：2014-09-16
申请号：US13574771
申请日：2011-03-17
申请人： Yue He , Gang Zheng , Changjun Zhao , Liang Meng
发明人： Yue He , Gang Zheng , Changjun Zhao , Liang Meng
IPC分类号： G06F11/00 , H04W4/00
CPC分类号： H04W4/005 , H04W4/70
摘要： A method for processing Machine-to-Machine (M2M) platform services and a M2M platform are disclosed. The method comprises: receiving a service request sent by a terminal; selecting a corresponding application according to capacity required by the service request; and forwarding the service request to the corresponding application, and feeding back a response result of the application to the terminal. The method for processing M2M platform services and the M2M platform in accordance with the present implement a platform for providing a variety applications for users.
摘要翻译：公开了一种用于处理机器对机器（M2M）平台服务和M2M平台的方法。该方法包括：接收终端发送的服务请求; 根据服务请求所需的容量选择相应的应用; 并将所述服务请求转发到相应的应用，并将所述应用的响应结果反馈给所述终端。 M2M平台服务处理方法和M2M平台按照现在实现为用户提供各种应用的平台。

19. 发明申请

US20130043120A1 SPUTTERING TARGET WITH REVERSE EROSION PROFILE SURFACE AND SPUTTERING SYSTEM AND METHOD USING THE SAME 有权
标题翻译：具有反向腐蚀剖面和溅射系统的溅射目标和使用其的方法
公开(公告)号：US20130043120A1
公开(公告)日：2013-02-21
申请号：US13212217
申请日：2011-08-18
申请人： Chia-Liang CHUEH , Kuo-Chou CHEN , Ren-Dou LEE , Hsien-Liang MENG , Chun-Wei LIN
发明人： Chia-Liang CHUEH , Kuo-Chou CHEN , Ren-Dou LEE , Hsien-Liang MENG , Chun-Wei LIN
IPC分类号： C23C14/35 , C23C14/14
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3405 , H01J37/3423 , H01J37/3482
摘要： A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.
摘要翻译：提供了一种溅射靶，其包括平面背板和形成在平面背板上的目标材料，并且包括具有厚部分和薄部分的不均匀溅射表面，并且与诸如具有固定的磁控溅射工具的溅射装置磁铁排列。不平坦表面与由磁体布置产生的磁场结合设计，使得较厚的目标部分位于高速率发生目标侵蚀的位置。还提供了磁控管溅射系统以及利用不均匀溅射表面的靶的方法，使得目标物上的厚度随着靶物的时间变得更加均匀。

20. 发明申请

US20090166397A1 BGA PACKAGE MODULE DESOLDERING APPARATUS AND METHOD 审中-公开
标题翻译： BGA封装模块设计和方法
公开(公告)号：US20090166397A1
公开(公告)日：2009-07-02
申请号：US12257225
申请日：2008-10-23
申请人： Liang MENG
发明人： Liang MENG
IPC分类号： B23K1/018 , B23K37/00
CPC分类号： B23K1/018 , B23K2101/40
摘要： A BGA package module desoldering apparatus for detaching a chip module from a circuit board is disclosed to include a heat source for heating the chip module, and radiators each having a tank and a refrigerant received in the tank for attaching to the circuit devices of the circuit board around the chip module to be detached to shield the circuit devices against the heat energy from the heat source and to lower the temperature of the circuit devices during heating of the chip module by the heat source.
摘要翻译：公开了一种用于从电路板分离芯片模块的BGA封装模块拆焊装置，包括用于加热芯片模块的热源，以及每个具有容器的散热器和容纳在罐中的制冷剂，用于附接到电路的电路装置芯片模块周围的板被分离以屏蔽电路装置抵抗来自热源的热能，并且在通过热源加热芯片模块期间降低电路装置的温度。

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