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    • 12. 发明授权
    • Organic electroluminescent device comprising power supply line on same layer as gate line
    • 有机电致发光器件包括与栅极线相同的电源线
    • US08071978B2
    • 2011-12-06
    • US10742775
    • 2003-12-23
    • Jae-Yong ParkKwang-Jo Hwang
    • Jae-Yong ParkKwang-Jo Hwang
    • H01L27/12H01L27/32H01L29/04H01L29/16H01L29/786
    • H01L27/3262H01L27/3253
    • An organic electroluminescent device includes first and second substrates spaced apart from and facing each other, an organic electroluminescent diode on an inner surface of the second substrate, a gate line formed on an inner surface of the first substrate in a first direction, a data line formed in a second direction crossing the first direction, a power supply line spaced apart from the data line and formed in the second direction, a switching thin film transistor at a crossing portion of the gate and data lines, a driving thin film transistor at a crossing portion of the switching thin film transistor and the power supply line, a connecting electrode connected to the driving thin film transistor, and an electrical connecting pattern corresponding to the connecting electrode and for electrically connecting the connecting electrode to the organic electroluminescent diode.
    • 有机电致发光器件包括彼此间隔开并面对的第一和第二衬底,在第二衬底的内表面上的有机电致发光二极管,在第一方向上形成在第一衬底的内表面上的栅极线,数据线 形成在与第一方向交叉的第二方向上,与数据线间隔开并形成在第二方向上的电源线,在栅极和数据线的交叉部分处的开关薄膜晶体管,位于栅极和数据线的交叉部分的开关薄膜晶体管, 开关薄膜晶体管和电源线的交叉部分,连接到驱动薄膜晶体管的连接电极和对应于连接电极的电连接图案,并将连接电极电连接到有机电致发光二极管。
    • 14. 发明授权
    • Organic electroluminescent device and fabricating method thereof
    • 有机电致发光器件及其制造方法
    • US07342249B2
    • 2008-03-11
    • US10876573
    • 2004-06-28
    • Jac-Yong ParkKwang-Jo HwangOck-Hee Kim
    • Jac-Yong ParkKwang-Jo HwangOck-Hee Kim
    • H01L29/04
    • H01L27/322H01L27/3251H01L51/5234H01L51/5284H01L2251/5315
    • An organic electroluminescent device, includes: a first substrate including a first pixel region, the first pixel region including first, second and third sub-pixel regions; an array element layer on an inner surface of the first substrate, the array element layer including a thin film transistor in each sub-pixel region; a second substrate facing the first substrate and being spaced apart from the first substrate, the second substrate including a second pixel region corresponding to the first pixel region, and the second pixel region including fourth, fifth and sixth sub-pixel regions; an organic electroluminescent diode on an inner surface of the second substrate in each sub-pixel region; and a connection electrode electrically connecting the first substrate to the second substrates, wherein the fourth, fifth and sixth sub-pixel regions have different sizes from each other.
    • 一种有机电致发光器件,包括:第一衬底,包括第一像素区域,所述第一像素区域包括第一,第二和第三子像素区域; 在所述第一基板的内表面上的阵列元件层,所述阵列元件层在每个子像素区域中包括薄膜晶体管; 第二基板,面对第一基板并且与第一基板间隔开,第二基板包括对应于第一像素区域的第二像素区域,第二像素区域包括第四,第五和第六子像素区域; 在每个子像素区域中的第二衬底的内表面上的有机电致发光二极管; 以及将第一基板电连接到第二基板的连接电极,其中第四,第五和第六子像素区域具有彼此不同的尺寸。
    • 16. 发明授权
    • Dual panel type organic electroluminescent device and method of fabricating the same
    • 双面板型有机电致发光器件及其制造方法
    • US07232702B2
    • 2007-06-19
    • US11204300
    • 2005-08-16
    • Jae-Yong ParkKwang-Jo Hwang
    • Jae-Yong ParkKwang-Jo Hwang
    • H01L21/00H01L51/40H01J9/00H01J1/62H01J63/04
    • H01L27/3253H01L27/3276
    • An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line crossing the gate line; a data ohmic contact layer under the data line, the data ohmic contact layer having the same shape as the data line; a power line parallel to, or substantially parallel to, and spaced apart from the data line, the power line including the same material as the gate line; a switching thin film transistor connected to the gate line and the data line, the switching thin film transistor using the semiconductor layer as a switching active layer; a driving thin film transistor connected to the switching thin film transistor and the power line, the driving thin film transistor using the semiconductor layer as a driving active layer; a connection pattern connected to the driving thin film transistor, the connection pattern including a conductive polymeric material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode contacting the connection pattern.
    • 有机电致发光器件包括彼此面对并间隔开的第一和第二衬底; 在第一基板的内表面上的栅极线; 栅极线上的半导体层,覆盖在第一衬底的表面上的半导体层; 跨越栅极线的数据线; 在数据线下方的数据欧姆接触层,数据欧姆接触层具有与数据线相同的形状; 与数据线平行或基本上平行于并与数据线分开的电力线,电源线包括与栅极线相同的材料; 连接到栅极线和数据线的开关薄膜晶体管,使用半导体层作为开关有源层的开关薄膜晶体管; 连接到开关薄膜晶体管和电力线的驱动薄膜晶体管,使用半导体层作为驱动有源层的驱动薄膜晶体管; 与所述驱动薄膜晶体管连接的连接图案,所述连接图案包括导电性聚合物材料; 在所述第二基板的内表面上的第一电极; 第一电极上的有机电致发光层; 和有机电致发光层上的第二电极,第二电极与连接图案接触。
    • 18. 发明授权
    • Dual panel type organic electroluminescent device and method of fabricating the same
    • 双面板型有机电致发光器件及其制造方法
    • US06984847B2
    • 2006-01-10
    • US10741440
    • 2003-12-22
    • Jae-Yong ParkKwang-Jo Hwang
    • Jae-Yong ParkKwang-Jo Hwang
    • H01L35/24
    • H01L27/3253H01L27/3276
    • An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line crossing the gate line; a data ohmic contact layer under the data line, the data ohmic contact layer having the same shape as the data line; a power line parallel to, or substantially parallel to, and spaced apart from the data line, the power line including the same material as the gate line; a switching thin film transistor connected to the gate line and the data line, the switching thin film transistor using the semiconductor layer as a switching active layer; a driving thin film transistor connected to the switching thin film transistor and the power line, the driving thin film transistor using the semiconductor layer as a driving active layer; a connection pattern connected to the driving thin film transistor, the connection pattern including a conductive polymeric material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode contacting the connection pattern.
    • 有机电致发光器件包括彼此面对并间隔开的第一和第二衬底; 在第一基板的内表面上的栅极线; 栅极线上的半导体层,覆盖在第一衬底的表面上的半导体层; 跨越栅极线的数据线; 在数据线下方的数据欧姆接触层,数据欧姆接触层具有与数据线相同的形状; 与数据线平行或基本上平行于并与数据线分开的电力线,电源线包括与栅极线相同的材料; 连接到栅极线和数据线的开关薄膜晶体管,使用半导体层作为开关有源层的开关薄膜晶体管; 连接到开关薄膜晶体管和电力线的驱动薄膜晶体管,使用半导体层作为驱动有源层的驱动薄膜晶体管; 与所述驱动薄膜晶体管连接的连接图案,所述连接图案包括导电性聚合物材料; 在所述第二基板的内表面上的第一电极; 第一电极上的有机电致发光层; 和有机电致发光层上的第二电极,第二电极与连接图案接触。
    • 19. 发明授权
    • Liquid crystal display with two gate electrodes each having a
non-anodizing and one anodizing metallic layer and method of fabricating
    • 具有两个栅极的液晶显示器,每个栅电极具有非阳极化和一个阳极氧化金属层及其制造方法
    • US5852481A
    • 1998-12-22
    • US927088
    • 1997-09-10
    • Kwang Jo Hwang
    • Kwang Jo Hwang
    • G02F1/136G02F1/1368H01L21/77H01L21/84H01L27/12H01L29/49H01L29/93H01L23/48
    • H01L27/1214G02F1/1368H01L29/4908
    • The method of fabricating a liquid crystal display device forms a first and second gate electrode on a first and second region, respectively, of a substrate. The first and second gate electrodes each include a non-anodizing metallic layer and at least one anodizing metallic layer. The two metallic layers also have different etching selection ratios. A first insulating layer is formed on the anodizing metallic layer of the first and second gate electrodes, and at least a second insulating layer is formed over the substrate. A thin film transistor structure, which utilizes the first gate electrode as a gate, is formed on the second insulating layer. The thin film transistor structure includes a semiconductor layer on the second insulating layer over the first gate electrode, an impurity semiconductor layer on first and second portions of the semiconductor layer, and first and second source/drain electrodes on the impurity semiconductor layer covering the first and second portions of the semiconductor layer, respectively. The method further includes the steps of depositing a passivation layer over the substrate, and forming first and second contacts holes. The first contact hole exposes the first source/drain electrode, and the second contact hole exposes the second gate electrode. A pixel electrode is formed on the passivation layer and in contact with the first source/drain electrode and the second gate electrode.
    • 制造液晶显示装置的方法分别在基板的第一和第二区域上形成第一和第二栅电极。 第一和第二栅电极各自包括非阳极氧化金属层和至少一个阳极氧化金属层。 两个金属层也具有不同的蚀刻选择比。 在第一和第二栅电极的阳极氧化金属层上形成第一绝缘层,并且在衬底上形成至少第二绝缘层。 在第二绝缘层上形成利用第一栅电极作为栅极的薄膜晶体管结构。 薄膜晶体管结构包括在第一栅电极上的第二绝缘层上的半导体层,在半导体层的第一和第二部分上的杂质半导体层以及杂质半导体层上的第一和第二源极/漏极,覆盖第一 和半导体层的第二部分。 该方法还包括以下步骤:在衬底上沉积钝化层,以及形成第一和第二接触孔。 第一接触孔暴露第一源极/漏极,并且第二接触孔暴露第二栅电极。 像素电极形成在钝化层上并与第一源极/漏极和第二栅电极接触。