专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20110186845A1 CRYSTALLIZATION METHOD OF AMORPHOUS SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR 审中-公开
标题翻译：非晶半导体膜，薄膜晶体管的结晶方法和薄膜晶体管的制造方法
公开(公告)号：US20110186845A1
公开(公告)日：2011-08-04
申请号：US12967683
申请日：2010-12-14
申请人： Kazushi YAMAYOSHI , Kazutoshi Aoki
发明人： Kazushi YAMAYOSHI , Kazutoshi Aoki
IPC分类号： H01L29/24 , H01L21/84 , H01L21/20
CPC分类号： H01L21/20 , H01L21/84 , H01L29/24
摘要： Provided is a thin film transistor that includes a gate electrode formed in one major plane of a substrate, a gate insulating film covering the gate electrode, a semiconductor film formed opposite to the gate electrode with the gate insulating film interposed and including a first amorphous region to serve as a source region, a second amorphous region to serve as a drain region, and a crystalline region to serve as a channel region disposed between the first amorphous region and the second amorphous region, and a source electrode and a drain electrode formed above the semiconductor film without direct contact with the crystalline region and electrically connected to the source region and the drain region, respectively.
摘要翻译：提供了一种薄膜晶体管，其包括形成在基板的一个主平面中的栅极电极，覆盖栅电极的栅极绝缘膜，与栅电极相对形成的半导体膜，栅极绝缘膜插入并且包括第一非晶区域用作源极区域，用作漏极区域的第二非晶区域和用作设置在第一非晶区域和第二非晶区域之间的沟道区域的晶体区域，以及形成在上部的源极电极和漏极电极所述半导体膜分别与所述晶体区域直接接触并且电连接到所述源极区域和所述漏极区域。

12. 发明授权

US07906779B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07906779B2
公开(公告)日：2011-03-15
申请号：US11946309
申请日：2007-11-28
申请人： Kazushi Yamayoshi
发明人： Kazushi Yamayoshi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036
CPC分类号： H01L29/66757 , H01L29/41733 , H01L29/458
摘要： A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.
摘要翻译：薄膜晶体管包括在具有沟道区，源极区和漏极区的衬底上形成的多晶硅层，形成在多晶硅层的上层中的导电层，用于覆盖源极区和漏极的至少一部分区域，形成在覆盖至少包括多晶硅层的区域的区域中的层间绝缘膜，形成为穿透层间绝缘膜的接触孔，具有暴露导电层的深度和沿着接触的侧壁形成的布线层孔。

13. 发明授权

US07803503B2 Halftone mask and method for making pattern substrate using the halftone mask 有权
标题翻译：半色调掩模和使用半色调掩模制作图案衬底的方法
公开(公告)号：US07803503B2
公开(公告)日：2010-09-28
申请号：US11835676
申请日：2007-08-08
申请人： Kazushi Yamayoshi
发明人： Kazushi Yamayoshi
IPC分类号： G03F1/00
CPC分类号： G03F1/50
摘要： A halftone mask includes translucent film patterns for forming a middle gradation area and light blocking film patterns disposed to an entire periphery of the translucent film patterns.
摘要翻译：半色调掩模包括用于形成中间渐变区域的半透明膜图案和设置在半透明膜图案的整个周边的遮光膜图案。

14. 发明授权

US07553778B2 Method for producing a semiconductor device including crystallizing an amphorous semiconductor film 失效
标题翻译：一种半导体器件的制造方法，包括使两相半导体膜结晶化
公开(公告)号：US07553778B2
公开(公告)日：2009-06-30
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

15. 发明申请

US20060183304A1 Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060183304A1
公开(公告)日：2006-08-17
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

16. 发明申请

US20120001837A1 ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DEVICE 有权
标题翻译：活性基质和液晶装置
公开(公告)号：US20120001837A1
公开(公告)日：2012-01-05
申请号：US12987347
申请日：2011-01-10
申请人： Kazushi YAMAYOSHI
发明人： Kazushi YAMAYOSHI
IPC分类号： G09G3/36 , H01L27/15
CPC分类号： H01L29/78633 , G09G3/3648 , G09G2300/0417 , G09G2300/0426 , G09G2300/0443 , G09G2320/0214 , H01L27/12 , H01L27/124 , H01L29/78678
摘要： An active matrix substrate includes a plurality of pairs of a TFT including a gate electrode and a gate insulating film formed on an insulating substrate, a channel layer made of at least one of a crystalline semiconductor film and an amorphous semiconductor film, and a source electrode and a drain electrode, and a pixel electrode arranged in an array. The channel layer is formed within a formation area of the gate electrode, the source electrode and the drain electrode are formed within a formation area of the channel layer, a source line is formed above the gate insulating film in a position spaced from the gate electrode, and the source line is connected to the source electrode through a connection line made of an oxide conductive film formed on top of the source electrode and extending from the top of the source electrode.
摘要翻译：有源矩阵基板包括多个TFT，其包括形成在绝缘基板上的栅电极和栅绝缘膜，由晶体半导体膜和非晶半导体膜中的至少一个制成的沟道层，以及源电极漏电极和排列成阵列的像素电极。沟道层形成在栅电极的形成区域内，源电极和漏电极形成在沟道层的形成区域内，源极线形成在栅极绝缘膜上方与栅电极间隔开的位置并且源极线通过由形成在源电极的顶部并从源电极的顶部延伸的由氧化物导电膜形成的连接线连接到源电极。

17. 发明申请

US20080135849A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080135849A1
公开(公告)日：2008-06-12
申请号：US11946309
申请日：2007-11-28
申请人： Kazushi Yamayoshi
发明人： Kazushi Yamayoshi
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66757 , H01L29/41733 , H01L29/458
摘要： A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.
摘要翻译：薄膜晶体管包括在具有沟道区，源极区和漏极区的衬底上形成的多晶硅层，形成在多晶硅层的上层中的导电层，用于覆盖源极区和漏极的至少一部分区域，形成在覆盖至少包括多晶硅层的区域的区域中的层间绝缘膜，形成为穿透层间绝缘膜的接触孔，具有暴露导电层的深度和沿着接触的侧壁形成的布线层孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式