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11. 发明授权

US08088538B2 Reflective mask blank for EUV lithography 有权
标题翻译： EUV光刻用反光罩
公开(公告)号：US08088538B2
公开(公告)日：2012-01-03
申请号：US12578648
申请日：2009-10-14
申请人： Kazyuki Hayashi , Kazuo Kadowaki , Masaki Mikami , Takashi Sugiyama
发明人： Kazyuki Hayashi , Kazuo Kadowaki , Masaki Mikami , Takashi Sugiyama
IPC分类号： G03F1/00 , B32B9/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/78
摘要： Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.
摘要翻译：提供用于EUV光刻的反射掩模板，其具有在EUV光和图案检查光的波长区域中具有低反射率的吸收层，并且其膜组成和膜厚度可以容易地控制到期望的。一种用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta），硼（ B）和硅（Si），并且在吸收层中，B的含量至少为1个。％和小于5在。％，Si的含量为1〜25at。％，并且其中吸收层不含氮（N）或至多10原子。％的N.

12. 发明申请

US20110179806A1 COOLING APPARATUS 审中-公开
标题翻译：冷却装置
公开(公告)号：US20110179806A1
公开(公告)日：2011-07-28
申请号：US12910107
申请日：2010-10-22
申请人： Shigetoshi Ipposhi , Tatsuro Hirose , Kazuo Kadowaki , Takumi Kijima , Takayuki Nakao
发明人： Shigetoshi Ipposhi , Tatsuro Hirose , Kazuo Kadowaki , Takumi Kijima , Takayuki Nakao
IPC分类号： F25B21/04 , F25B21/02 , F28D15/04 , F25B29/00
CPC分类号： F28D15/0266 , F25B21/02 , F25B23/006 , F25B25/00 , F25B2321/021 , F25B2700/2107 , H01L23/38 , H01L23/427 , H01L2924/0002 , H01S5/02415 , H01S5/4093 , H01L2924/00
摘要： Disclosed is a cooling apparatus including: a heat receiving plate to which a plurality of heating elements are attached; a radiator plate to which a plurality of Peltier devices are attached; a thermal transport heat pipe that couples the heat receiving plate with the radiator plate; and a heat dissipating device being provided on an exothermic side of the Peltier devices; wherein the plurality of heating elements are arranged along a longitudinal direction of the thermal transport heat pipe, and the plurality of Peltier devices are arranged along the longitudinal direction of the thermal transport heat pipe, whereby, when using a plurality of Peltier devices, reducing power consumption thereof by equalizing each operation of the respective Peltier devices.
摘要翻译：本发明公开了一种冷却装置，其特征在于，包括：多个加热元件安装在该受热板上; 安装有多个珀耳帖装置的散热板; 将热接收板与散热板联接的热传输热管; 以及在珀耳帖装置的放热侧设置的散热装置; 其特征在于，所述多个加热元件沿着所述热传输热管的长度方向配置，所述多个珀耳帖装置沿着所述热输送热管的长度方向配置，由此，在使用多个珀耳贴装置的情况下，通过均衡各个珀耳帖装置的每个操作来消耗它们。

13. 发明授权

US07713666B2 Reflective mask blank for EUV lithography 失效
标题翻译： EUV光刻用反光罩
公开(公告)号：US07713666B2
公开(公告)日：2010-05-11
申请号：US12027680
申请日：2008-02-07
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/54
摘要： To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.
摘要翻译：为了提供EUV光刻用的反射掩模板，其具有在EUV光或光的波长区域具有低反射率的吸收层，用于检查图案，并且易于控制以具有期望的层组成和厚度。用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta）和铪（ Hf），并且在吸收层中，Hf的含量为20〜60at。％，Ta的含量为40〜80。％。

14. 发明申请

US20100035165A1 REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 有权
标题翻译：反射掩蔽空白用于EUV LITHOGRAPHY
公开(公告)号：US20100035165A1
公开(公告)日：2010-02-11
申请号：US12578648
申请日：2009-10-14
申请人： KAZUYUKI HAYASHI , KAZUO KADOWAKI , MASAKI MIKAMI , TAKASHI SUGIYAMA
发明人： KAZUYUKI HAYASHI , KAZUO KADOWAKI , MASAKI MIKAMI , TAKASHI SUGIYAMA
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/78
摘要： Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.
摘要翻译：提供用于EUV光刻的反射掩模板，其具有在EUV光和图案检查光的波长区域中具有低反射率的吸收层，并且其膜组成和膜厚度可以容易地控制到期望的。一种用于EUV光刻的反射掩模板，其包括衬底，以及反射层，用于反射EUV光和吸收层，以吸收EUV光，该衬底依次形成在衬底上，其中吸收层包含钽（Ta），硼（ B）和硅（Si），并且在吸收层中，B的含量至少为1个。％和小于5在。％，Si的含量为1〜25at。％，并且其中所述吸收层不含氮（N）或至多10原子。％的N.

15. 发明申请

US20080318140A1 REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH FUNCTIONAL FILM FOR THE SAME 有权
标题翻译：用于EUV光刻的反射掩膜和具有相同功能膜的基板
公开(公告)号：US20080318140A1
公开(公告)日：2008-12-25
申请号：US12198912
申请日：2008-08-27
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/22 , G21K1/062
摘要： To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.
摘要翻译：提供抑制EUV曝光期间反射率降低的EUV掩模空白，以及用于制造这种EUV掩模空白的具有功能膜的基板。具有用于EUV光刻的反射层的衬底，包括衬底和用于反射EUV光的反射层和用于保护在衬底上依次形成的反射层的保护层，其中保护层包含钌（Ru）并且在选自硼（B）和锆（Zr）的至少一种元素; 并且在保护层中，Ru含量为70原子％至95原子％，B和Zr的总含量为5原子％至30原子％。

16. 发明申请

US20110194578A1 LASER LIGHT-SOURCE APPARATUS AND PROJECTOR APPARATUS 有权
标题翻译：激光灯装置和投影仪
公开(公告)号：US20110194578A1
公开(公告)日：2011-08-11
申请号：US13021108
申请日：2011-02-04
申请人： Tatsuro HIROSE , Taisuke Murata , Kazuo Kadowaki
发明人： Tatsuro HIROSE , Taisuke Murata , Kazuo Kadowaki
IPC分类号： H01S3/04
CPC分类号： H01S5/02469 , H01S5/02208 , H01S5/02256 , H01S5/02292 , H01S5/4093 , H04N9/3129 , H04N9/3144 , H04N9/3161
摘要： A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.
摘要翻译：根据本发明的激光光源装置装备有：激光驱动电路板，放置在激光驱动电路板上的绝热体; 放置在热绝缘体上并与激光驱动电路板热绝缘的热接收板，安装在受热板上以与热接收板热连接的激光光源模块，也是电连接到激光驱动电路板以被驱动，以及散热器，其通过热管与热接收板热连接。

17. 发明申请

US20100328622A1 PROJECTION DISPLAY APPARATUS 审中-公开
标题翻译：投影显示设备
公开(公告)号：US20100328622A1
公开(公告)日：2010-12-30
申请号：US12732776
申请日：2010-03-26
申请人： Norihiro WATANABE , Satoru Okagaki , Atsushi Michimori , Norichika Sugano , Kazuo Kadowaki , Tomomi Matsui
发明人： Norihiro WATANABE , Satoru Okagaki , Atsushi Michimori , Norichika Sugano , Kazuo Kadowaki , Tomomi Matsui
IPC分类号： G03B21/10
CPC分类号： G03B21/10
摘要： A projection image display apparatus is provided which is capable of preventing misregistration in an on-screen image. A main frame assembly holds together an optical engine that modulates light emitted from a light source and a screen on which light emitted from the optical engine is projected, and the main frame assembly is configured to be supported by a bottom frame formed by a separate structure, whereby distortion having occurred at the bottom frame is caused not to transmit to the main frame assembly.
摘要翻译：提供了能够防止屏幕上图像不对准的投影图像显示装置。主框架组件将调制从光源发出的光和从光学引擎发射的光投射的屏幕的光学引擎固定在一起，并且主框架组件被构造成由由单独的结构形成的底部框架支撑使得在底部框架处发生的变形不会传递到主框架组件。

18. 发明授权

US07833682B2 Reflective mask blank for EUV lithography and substrate with functional film for the same 有权
标题翻译：用于EUV光刻的反光掩模板和具有功能膜的基板
公开(公告)号：US07833682B2
公开(公告)日：2010-11-16
申请号：US12198912
申请日：2008-08-27
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama , Masaki Mikami
IPC分类号： G03F1/00 , B32B17/06
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/22 , G21K1/062
摘要： To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.
摘要翻译：提供抑制EUV曝光期间反射率降低的EUV掩模空白，以及用于制造这种EUV掩模空白的具有功能膜的基板。具有用于EUV光刻的反射层的衬底，包括衬底和用于反射EUV光的反射层和用于保护在衬底上依次形成的反射层的保护层，其中保护层包含钌（Ru）并且在选自硼（B）和锆（Zr）的至少一种元素; 并且在保护层中，Ru含量为70原子％至95原子％，B和Zr的总含量为5原子％至30原子％。

19. 发明授权

US07718324B2 Reflective mask blank for EUV lithography 有权
标题翻译： EUV光刻用反光罩
公开(公告)号：US07718324B2
公开(公告)日：2010-05-18
申请号：US12028250
申请日：2008-02-08
申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
发明人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , G03F1/46 , G03F1/58
摘要： A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.
摘要翻译：用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta）和铪（ Hf），并且在吸收层中，Hf的含量为20〜60at。％，Ta的含量为40〜80。％，并且其中所述吸收层的N含量为0至至多35at。％。

20. 发明申请

US20100026968A1 PROJECTION-TYPE IMAGE DISPLAY APPARATUS 审中-公开
标题翻译：投影型图像显示设备
公开(公告)号：US20100026968A1
公开(公告)日：2010-02-04
申请号：US12508671
申请日：2009-07-24
申请人： Takumi KIJIMA , Kazuo Kadowaki , Takashi Kojima , Kohei Eto
发明人： Takumi KIJIMA , Kazuo Kadowaki , Takashi Kojima , Kohei Eto
IPC分类号： G03B21/10
CPC分类号： G03B21/10
摘要： A projection-type image display apparatus that projects an image on a screen, includes a screen frame that holds the screen; an optical engine base that is coupled to a lower edge of the screen frame; an upper cross brace that extends obliquely backwards from an upper edge of the screen frame; a lower cross brace that extends obliquely backwards from a vertical frame of the screen frame; and a coupling member that couples the upper cross brace with the lower cross brace.
摘要翻译：投影型图像显示装置，其在屏幕上投影图像，包括保存屏幕的画面框; 耦合到所述屏幕框架的下边缘的光学引擎基座; 上横向支架，其从所述屏幕框架的上边缘倾斜地向后延伸; 从屏幕框架的垂直框架倾斜向后延伸的下横向支架; 以及将上横梁与下横梁支撑联接的联接构件。

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