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11. 发明申请

US20200001427A1 Temperature Control of Chemical Mechanical Polishing 审中-公开
公开(公告)号：US20200001427A1
公开(公告)日：2020-01-02
申请号：US16448980
申请日：2019-06-21
申请人： Hari Soundararajan , Shou-Sung Chang , Haosheng Wu , Jianshe Tang , Jeonghoon Oh , Rajeev Bajaj , Andrew Siordia
发明人： Hari Soundararajan , Shou-Sung Chang , Haosheng Wu , Jianshe Tang , Jeonghoon Oh , Rajeev Bajaj , Andrew Siordia
IPC分类号： B24B37/015 , B24B57/02 , B24B37/20
摘要： A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

12. 发明授权

US07718009B2 Cleaning submicron structures on a semiconductor wafer surface 失效
标题翻译：清洁半导体晶圆表面上的亚微米结构
公开(公告)号：US07718009B2
公开(公告)日：2010-05-18
申请号：US10931093
申请日：2004-08-30
申请人： Steven Verhaverbeke , Jianshe Tang , Roman Gouk , Brian J. Brown , Han-Wen Chen , Ching-Hwa Weng , James S. Papanu , Dennis Yost
发明人： Steven Verhaverbeke , Jianshe Tang , Roman Gouk , Brian J. Brown , Han-Wen Chen , Ching-Hwa Weng , James S. Papanu , Dennis Yost
IPC分类号： C23G1/02
CPC分类号： H01L21/02074 , B08B3/08 , B08B3/12 , C11D7/08 , C11D11/0047 , C11D11/007 , H01L21/02063 , H01L21/02071 , H01L21/0209 , H01L21/67051 , H01L21/76808 , H01L21/76814
摘要： Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.
摘要翻译：描述了针对半导体制造中的特定衬底和结构的清洁溶液和清洁方法。描述了一种使用表面张力小于水的溶剂形成的清洁溶液清洁尺寸小于0.15μm的脆弱结构的方法，同时向其上形成结构的基底施加声能。此外，还描述了用几种不同的清洁溶液，特别是硫酸水溶液和HF清洗溶液清洗铜的方法。此外，还描述了使用不同的清洁溶液同时清洁基板的两侧的方法，所述清洗溶液应用于顶部和底部。

13. 发明授权

US07682457B2 Frontside structure damage protected megasonics clean 失效
标题翻译：前端结构损坏保护了超声波清洁
公开(公告)号：US07682457B2
公开(公告)日：2010-03-23
申请号：US11973039
申请日：2007-10-04
申请人： Zhiyong Li , Jianshe Tang , Bo Xie , Wei Lu
发明人： Zhiyong Li , Jianshe Tang , Bo Xie , Wei Lu
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , H01L21/67051 , Y10S134/902
摘要： An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.
摘要翻译：描述了用于从工件去除污染物的设备和方法。本发明的实施例描述了将工件放置在处理室内的保持支架上以保持和旋转待清洁的工件。第一清洗流体被提供给工件非装置侧，而在兆声波清洗期间将脱气液体提供给工件装置侧。在超声波清洗过程中，脱气液体会抑制气蚀发生并破坏工件的装置侧。

14. 发明申请

US20090241996A1 SINGLE WAFER DRYER AND DRYING METHODS 审中-公开
标题翻译：单辊干燥机和干燥方法
公开(公告)号：US20090241996A1
公开(公告)日：2009-10-01
申请号：US12345642
申请日：2008-12-29
申请人： Younes Achkire , Alexander N. Lerner , Boris I. Govzman , Boris Fishkin , Michael N. Sugarman , Rashid A. Mavliev , Haoquan Fang , Shijian Li , Guy E. Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander N. Lerner , Boris I. Govzman , Boris Fishkin , Michael N. Sugarman , Rashid A. Mavliev , Haoquan Fang , Shijian Li , Guy E. Shirazi , Jianshe Tang
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.
摘要翻译：在第一方面，提供一种适于处理晶片的模块。模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与卸货港（2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没式流体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。

15. 发明申请

US20090090381A1 Frontside structure damage protected megasonics clean 失效
标题翻译：前端结构损坏保护了超声波清洁
公开(公告)号：US20090090381A1
公开(公告)日：2009-04-09
申请号：US11973039
申请日：2007-10-04
申请人： Zhiyong Li , Jianshe Tang , Bo Xie , Wei Lu
发明人： Zhiyong Li , Jianshe Tang , Bo Xie , Wei Lu
IPC分类号： B08B3/10 , B08B13/00 , B08B3/12
CPC分类号： B08B3/12 , H01L21/67051 , Y10S134/902
摘要： An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.
摘要翻译：描述了用于从工件去除污染物的设备和方法。本发明的实施例描述了将工件放置在处理室内的保持支架上以保持和旋转待清洁的工件。第一清洗流体被提供给工件非装置侧，而在兆声波清洗期间将脱气液体提供给工件装置侧。在超声波清洗过程中，脱气液体会抑制气蚀发生并破坏工件的装置侧。

16. 发明授权

US07513062B2 Single wafer dryer and drying methods 有权
标题翻译：单片干燥机和干燥方法
公开(公告)号：US07513062B2
公开(公告)日：2009-04-07
申请号：US11054336
申请日：2005-02-09
申请人： Younes Achkire , Alexander N Lerner , Boris Govzman , Boris Fishkin , Michael N Sugarman , Rashid A Mavliev , Haoquan Fang , Shijian Li , Guy E Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander N Lerner , Boris Govzman , Boris Fishkin , Michael N Sugarman , Rashid A Mavliev , Haoquan Fang , Shijian Li , Guy E Shirazi , Jianshe Tang
IPC分类号： F26B3/00 , B08B3/00
CPC分类号： H01L21/02052 , H01L21/67034
摘要： In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.
摘要翻译：在第一方面中，提供了干燥基板的第一种方法。第一种方法包括以下步骤：（1）以第一速率提升衬底通过空气/流体界面; （2）在提升衬底期间在空气/流体界面处引导干燥蒸汽; 和（3）当衬底的一部分保留在空气/流体界面中时，降低衬底的剩余部分通过空气/流体界面提升到第二速率的速率。干燥蒸气可以与空气/流体界面形成约23°的角度和/或第二速率可以为约2.5mm / sec。

17. 发明申请

US20080163897A1 TWO STEP PROCESS FOR POST ASH CLEANING FOR CU/LOW-K DUAL DAMASCENE STRUCTURE WITH METAL HARD MASK 审中-公开
标题翻译：用于具有金属硬掩模的CU / LOW-K双重结构结构的自动清洁的两步法
公开(公告)号：US20080163897A1
公开(公告)日：2008-07-10
申请号：US11621867
申请日：2007-01-10
申请人： JIANSHE TANG , Willey Weng , Wei Lu , Han-Wen Chen , Tseng-Chung Lee , Ching Hwa Weng
发明人： JIANSHE TANG , Willey Weng , Wei Lu , Han-Wen Chen , Tseng-Chung Lee , Ching Hwa Weng
IPC分类号： B08B3/04
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/08 , H01L21/02063 , H01L21/02068
摘要： A method and apparatus for removing residue on a wafer is described. A first solution is applied to remove a first type of residue from a metal mask on the wafer. A second solution is applied to remove a second type of residue from the metal mask on the wafer.
摘要翻译：描述了用于去除晶片上残留物的方法和装置。应用第一种方案从晶片上的金属掩模中除去第一类型的残留物。应用第二种解决方案来从晶片上的金属掩模中除去第二类型的残余物。

18. 发明申请

US20080163891A1 METHOD AND APPARATUS OF MULTI STEPS ATOMIZATION FOR GENERATING SMALLER DIW DROPPLETS FOR WAFER CLEANING 审中-公开
标题翻译：用于生成用于清洁的小型二极管的多步骤原理的方法和装置
公开(公告)号：US20080163891A1
公开(公告)日：2008-07-10
申请号：US11621855
申请日：2007-01-10
申请人： JIANSHE TANG , Wei Lu , Bo Xie , Elias Martinez , Zhiyong Li , Kent Child , Richard Endo , Konstantin Smekalin
发明人： JIANSHE TANG , Wei Lu , Bo Xie , Elias Martinez , Zhiyong Li , Kent Child , Richard Endo , Konstantin Smekalin
IPC分类号： B08B3/00
CPC分类号： H01L21/02065 , H01L21/02057 , H01L21/67051
摘要： An apparatus for cleaning a wafer has a first chamber and a component coupled to the first chamber. The first chamber has a first input to form de-ionized water droplets. The component is coupled to the first chamber to further atomize and apply the atomized de-ionized water droplets on the wafer.
摘要翻译：用于清洁晶片的装置具有第一室和耦合到第一室的部件。第一室具有形成去离子水滴的第一输入。该组件耦合到第一室以进一步雾化并将雾化的去离子水滴施加在晶片上。

19. 发明申请

US20070234951A1 METHODS AND APPARATUS FOR CLEANING A SUBSTRATE 审中-公开
标题翻译：清洗基板的方法和装置
公开(公告)号：US20070234951A1
公开(公告)日：2007-10-11
申请号：US11690621
申请日：2007-03-23
申请人： WEI LU , Jianshe Tang , Alexander Ko , Nelson Yee , Bo Xie , John Lee , Richard Endo
发明人： WEI LU , Jianshe Tang , Alexander Ko , Nelson Yee , Bo Xie , John Lee , Richard Endo
IPC分类号： B05C5/00
CPC分类号： H01L21/67051 , B08B3/024 , H01L21/6704
摘要： The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于清洁衬底的方法，装置和系统，其包括控制器和连接到控制器的喷嘴。控制器适于引导喷嘴将均匀的流体喷雾图案分配到基底上。通过调整喷嘴的至少一个操作参数来使控制器适应于产生均匀的流体喷射图案，以使预定百分比的液滴在预定的尺寸范围内。公开了许多其他方面。

20. 发明授权

US07165565B2 Megasonic wafer cleaning tank with reflector for improved wafer edge cleaning 失效
标题翻译：具有反光镜的超声波晶片清洗槽可改善晶片边缘清洁
公开(公告)号：US07165565B2
公开(公告)日：2007-01-23
申请号：US10736242
申请日：2003-12-15
申请人： Robert D Tolles , David P Alvarez , Jianshe Tang
发明人： Robert D Tolles , David P Alvarez , Jianshe Tang
IPC分类号： B08B3/12
CPC分类号： H01L21/67057 , B08B3/12 , Y10S134/902
摘要： In a first aspect, a first apparatus is provided. The first apparatus includes (1) a tank adapted to contain fluid; (2) at least one support component mounted in the tank and adapted to support a substrate in a supported position at least partially submerged in the fluid; (3) a transducer adapted to output sonic energy into the fluid; and (4) a reflector positioned at a side of the substrate and adapted to reflect the sonic energy toward an edge of the substrate so as to provide a 100% duty cycle. The reflector is positioned such that the reflector does not obstruct a path employed to load the substrate into the supported position and to unload the substrate from the supported position. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了一种第一装置。第一装置包括（1）适于容纳流体的罐; （2）至少一个支撑部件，其安装在所述罐中并且适于将基板支撑在至少部分浸没在所述流体中的支撑位置; （3）适于将声能输出到所述流体中的换能器; 和（4）位于基板侧面的反射器，其适于将声能量朝向基板的边缘反射，从而提供100％的占空比。反射器被定位成使得反射器不阻碍用于将基板加载到支撑位置并将基板从支撑位置卸载的路径。提供了许多其他方面。

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