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11. 发明授权

US06215289B1 Switchable D.C. voltage regulation circuit 有权
标题翻译：可切换直流电压调节电路
公开(公告)号：US06215289B1
公开(公告)日：2001-04-10
申请号：US09179494
申请日：1998-10-27
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： G05F140
CPC分类号： G05F3/18
摘要： The present invention relates to a switchable d.c. voltage regulation circuit having an input terminal, an output terminal, a reference terminal, and a control terminal, including a gate turn-off thyristor, the main terminals of which are connected to the input terminal and to the output terminal, respectively; a resistor connected between the input terminal and the cathode gate of the thyristor; a transistor, the main terminals of which are connected to the cathode gate of the thyristor and to the reference terminal, respectively; and an avalanche diode connected between the output terminal and the base of the transistor.
摘要翻译：本发明涉及一种可切换的直流具有输入端子，输出端子，参考端子以及控制端子的电压调节电路，包括栅极截止晶闸管，其主端子分别连接到输入端子和输出端子; 连接在晶闸管的输入端子和阴极栅极之间的电阻器; 一个晶体管，其主端分别连接到晶闸管的阴极栅极和参考端子; 连接在晶体管的输出端和基极之间的雪崩二极管。

12. 发明授权

US06479841B1 Power component state detector 有权
标题翻译：功率分量状态检测器
公开(公告)号：US06479841B1
公开(公告)日：2002-11-12
申请号：US09705113
申请日：2000-11-02
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： H01L2900
CPC分类号： H01L29/747 , H01L29/7404
摘要： A detector of the state (on or off) of a vertical power component formed in a lightly-doped semiconductor substrate of a first conductivity type having a front surface and a rear surface. The region corresponding to the power component is surrounded with an isolating wall of opposite type to that of the substrate. This state detector is formed outside of said region and is formed with a vertical detection component, the state of which is switched by parasitic charges propagating outside of the isolating wall when the power component is on.
摘要翻译：形成在具有前表面和后表面的第一导电类型的轻掺杂半导体衬底中的垂直功率部件的状态（开或关）的检测器。对应于功率分量的区域被与衬底相反的隔离壁包围。该状态检测器形成在所述区域外部，并且形成有垂直检测部件，当功率部件接通时，其状态由在隔离壁外部传播的寄生电荷切换。

13. 发明授权

US06252451B1 Switching circuit 有权
标题翻译：开关电路
公开(公告)号：US06252451B1
公开(公告)日：2001-06-26
申请号：US09375858
申请日：1999-08-17
申请人： Fabrice Guitton , Didier Magnon , Jean-Michel Simonnet , Olivier Ladiray
发明人： Fabrice Guitton , Didier Magnon , Jean-Michel Simonnet , Olivier Ladiray
IPC分类号： H03K1772
CPC分类号： H03K17/16 , H03K17/732
摘要： A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.
摘要翻译：这种类型的单向开关电路包括被偏置为通常导通的栅极截止晶闸管，还包括在栅极和电源线之间，并联连接的电容器和可控开关。

14. 发明授权

US5994171A Method of making lateral components in power semiconductor devices 失效
标题翻译：在功率半导体器件中制造横向元件的方法
公开(公告)号：US5994171A
公开(公告)日：1999-11-30
申请号：US787741
申请日：1997-01-24
申请人： Eric Bernier , Jean-Michel Simonnet
发明人： Eric Bernier , Jean-Michel Simonnet
IPC分类号： H01L21/336 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/735 , H01L29/74 , H01L29/78 , H01L29/861 , H01L21/332
CPC分类号： H01L27/0814 , H01L29/735 , H01L29/7436
摘要： A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.
摘要翻译：用于调整形成在具有第一导电类型的半导体晶片的前表面中的侧向部件的增益或灵敏度的方法包括根据第一导电类型，当期望的情况下的背面不掺杂或过度掺杂降低横向分量的增益或灵敏度，并且当要增加侧向分量的增益或灵敏度时，根据第二导电类型（背面）掺杂。

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