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11. 发明申请

US20140315367A1 RINSE LIQUID FOR INSULATING FILM AND METHOD OF RINSING INSULATING FILM 有权
标题翻译：用于绝缘膜的冲洗液和冲压绝缘膜的方法
公开(公告)号：US20140315367A1
公开(公告)日：2014-10-23
申请号：US14090003
申请日：2013-11-26
申请人： Jin-Hee BAE , Han-Song LEE , Wan-Hee LIM , Go-Un KIM , Taek-Soo KWAK , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Youn-Jin CHO , Kwen-Woo HAN , Byeong-Gyu HWANG
发明人： Jin-Hee BAE , Han-Song LEE , Wan-Hee LIM , Go-Un KIM , Taek-Soo KWAK , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Youn-Jin CHO , Kwen-Woo HAN , Byeong-Gyu HWANG
IPC分类号： H01L21/02 , H01L27/108
CPC分类号： H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
摘要： A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
摘要翻译：一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：

12. 发明申请

US20140187017A1 PROCESS OF PREPARING A GAP FILLER AGENT, A GAP FILLER AGENT PREPARED USING SAME, AND A METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE GAP FILLER AGENT 有权
标题翻译：制备GAP填料剂的方法，使用其制备的GAP填料剂以及使用GAP填料剂制造半导体电容器的方法
公开(公告)号：US20140187017A1
公开(公告)日：2014-07-03
申请号：US14144738
申请日：2013-12-31
申请人： Jin-Hee BAE , Han-Song LEE , Taek-Soo KWAK , Go-Un KIM , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Sang-Hak LIM , Wan-Hee LIM , Seung-Hee HONG , Byeong-Gyu HWANG
发明人： Jin-Hee BAE , Han-Song LEE , Taek-Soo KWAK , Go-Un KIM , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Sang-Hak LIM , Wan-Hee LIM , Seung-Hee HONG , Byeong-Gyu HWANG
IPC分类号： H01L49/02
CPC分类号： H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
摘要： A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
摘要翻译：制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷以约1g / hr至约15g / hr的速率。

13. 发明授权

US09874812B2 Methods of forming hardmask material film 有权
公开(公告)号：US09874812B2
公开(公告)日：2018-01-23
申请号：US15010018
申请日：2016-01-29
申请人： Myeong-koo Kim , Nae-ry Yu , Won-ki Lee , Hyun-woo Kim , Song-se Yi , Min-soo Kim , Jae-yeol Baek , Hyun-ji Song
发明人： Myeong-koo Kim , Nae-ry Yu , Won-ki Lee , Hyun-woo Kim , Song-se Yi , Min-soo Kim , Jae-yeol Baek , Hyun-ji Song
IPC分类号： G03F7/00 , H01L21/308 , H01L21/02 , H01L21/3105 , H01L21/311
CPC分类号： G03F7/0035 , H01L21/02118 , H01L21/02282 , H01L21/02318 , H01L21/3081 , H01L21/3086 , H01L21/31058 , H01L21/31116 , H01L21/31133 , H01L21/31138
摘要： Methods of forming a hardmask material film are provided. The methods may include preparing a substrate including a first region that includes first patterns with a first density and a second region that includes second patterns with a second density that is lower than the first density or is free of patterns, forming a first hardmask material film in gaps between the first patterns and on surfaces of the first region and the second region, performing a heat treatment on the first hardmask material film such that solvent solubility of portions of the first hardmask material film in the gaps between the first patterns becomes different from solvent solubility of portions of the first hardmask material film outside the gaps, removing the first hardmask material film formed on the surfaces of the first region and the second region such that the portions of the first hardmask material film in the gaps at least partially remain in the gaps, and forming a second hardmask material film on the surfaces of the first region and the second region.

14. 发明申请

US20150001178A1 MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION 审中-公开
标题翻译： HARDMASK组合物和HARDMASK组合物的单体包括单体和使用HARDMASK组合物形成图案的方法
公开(公告)号：US20150001178A1
公开(公告)日：2015-01-01
申请号：US14258489
申请日：2014-04-22
申请人： Hyun-Ji SONG , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Yoo-Jeong CHOI , Seung-Hee HONG
发明人： Hyun-Ji SONG , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Yoo-Jeong CHOI , Seung-Hee HONG
IPC分类号： G03F1/00 , C07D311/58 , C07D333/50 , C07C39/17 , C07D333/16 , G03F7/40 , C07C39/225 , C07C255/53 , C07C22/04 , G03F7/16 , G03F7/20 , C07D215/14 , C07C35/21
CPC分类号： G03F7/40 , C07C22/04 , C07C39/12 , C07C39/225 , C07C217/58 , C07C255/53 , C07C323/19 , C07C2601/14 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D215/14 , C07D311/58 , C07D333/16 , C07D333/50 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36 , G03F7/38
摘要： A monomer for a hardmask composition is represented by the following Chemical Formula 1,
摘要翻译：用于硬掩模组合物的单体由以下化学式1表示，

15. 发明申请

US20080088378A1 PHASE LOCKED LOOP HAVING CONTINUOUS BANK CALIBRATION UNIT AND METHOD OF PREVENTING UNLOCKING OF PLL 审中-公开
标题翻译：具有连续银行校准单元的相位锁定环和防止PLL解锁的方法
公开(公告)号：US20080088378A1
公开(公告)日：2008-04-17
申请号：US11868657
申请日：2007-10-08
申请人： Hyun Ji SONG , Kyung Lok KIM , Kyoo Hyun LIM
发明人： Hyun Ji SONG , Kyung Lok KIM , Kyoo Hyun LIM
IPC分类号： H03L7/099 , H03L7/08
CPC分类号： H03L7/099 , H03L7/10 , H03L2207/06
摘要： A phase locked loop (PLL) having a continuous bank calibration unit and a method of preventing unlocking of the PLL are provided. The PLL includes a main circuit, a voltage controlled oscillator (VCO), and a continuous bank calibration unit. The main circuit outputs a control voltage in response to an external clock signal and an oscillating signal. The VCO outputs the oscillating signal in response to the control voltage and the bank calibration signal. The continuous bank calibration unit compares the received control voltage with a window voltage having at least two comparison values to output the bank calibration signal. In the PLL having a continuous bank calibration unit, although the control voltage varies with external factors such as temperature, the bank of the VCO is immediately and suitably calibrated to prevent unlocking of the PLL, so that it is possible to Improve an output characteristic of the VCO.
摘要翻译：提供了具有连续存储体校准单元的锁相环（PLL）和防止锁定解锁的方法。 PLL包括主电路，压控振荡器（VCO）和连续存储体校准单元。主电路响应于外部时钟信号和振荡信号输出控制电压。 VCO响应于控制电压和组校准信号输出振荡信号。连续存储体校准单元将接收到的控制电压与具有至少两个比较值的窗口电压进行比较，以输出存储体校准信号。在具有连续组合校准单元的PLL中，尽管控制电压随外部因素如温度而变化，但VCO的存储体立即被适当地校准以防止PLL的解锁，从而可以提高输出特性 VCO。

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