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11. 发明授权

US06217662B1 Susceptor designs for silicon carbide thin films 失效
标题翻译： Susceptor设计了碳化硅薄膜
公开(公告)号：US06217662B1
公开(公告)日：2001-04-17
申请号：US08823365
申请日：1997-03-24
申请人： Hua-Shuang Kong , Calvin Carter, Jr. , Joseph Sumakeris
发明人： Hua-Shuang Kong , Calvin Carter, Jr. , Joseph Sumakeris
IPC分类号： C23C1600
CPC分类号： C23C16/4582 , C30B25/12
摘要： A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor comprises a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate-receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.
摘要翻译：公开了用于在外延生长期间最小化或消除影响衬底晶片的热梯度的感受器。基座包括第一基座部分，其包括用于在其上接收半导体衬底晶片的表面，以及面对基板接收表面并与基板接收表面间隔开的第二基座部分。间隔足够大以允许它们之间的气体流动在表面上的衬底上进行外延生长，同时足够小以使第二基座部分将衬底的暴露面加热到与第一基座部分加热的基本相同的温度与基板接收表面直接接触的基板的表面。

12. 发明授权

US5838706A Low-strain laser structures with group III nitride active layers 失效
标题翻译：具有III族氮化物活性层的低应变激光器结构
公开(公告)号：US5838706A
公开(公告)日：1998-11-17
申请号：US752203
申请日：1996-11-19
申请人： John Adam Edmond , Gary E. Bulman , Hua-Shuang Kong
发明人： John Adam Edmond , Gary E. Bulman , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S5/32341 , H01S5/343 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/34333
摘要： A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.
摘要翻译：公开了一种III族氮化物激光器结构，该有源层包括至少一层III族氮化物或碳化硅与III族氮化物的合金，碳化硅衬底以及在活性层和碳化硅衬底。缓冲层选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物，其中A和B是III族元素，其中x是0，1，或者是零和一个，以及碳化硅与这种三元III族氮化物的合金。在优选实施例中，激光器结构包括有源层上方的应变最小化接触层，其具有与缓冲层基本相同的晶格常数。

13. 发明授权

US5338944A Blue light-emitting diode with degenerate junction structure 失效
标题翻译：具有退化结结构的蓝色发光二极管
公开(公告)号：US5338944A
公开(公告)日：1994-08-16
申请号：US125284
申请日：1993-09-22
申请人： John A. Edmond , Hua-Shuang Kong , Vladimir Dmitriev , Gary E. Bulman
发明人： John A. Edmond , Hua-Shuang Kong , Vladimir Dmitriev , Gary E. Bulman
IPC分类号： H01L33/00 , H01L33/34
CPC分类号： H01L33/34 , H01L33/0008 , H01S5/3095
摘要： A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
摘要翻译：公开了一种以增加的亮度和效率在可见光谱的蓝色区域中发光的发光二极管。发光二极管包括n型碳化硅衬底; n型碳化硅顶层; 以及n型衬底和n型顶层之间的发光p-n结结构。 p-n结结构由n型碳化硅和p型碳化硅的各部分形成。二极管还包括在n型顶层和n型衬底之间的装置，用于将n型顶层耦合到发光pn结结构，同时防止n型顶层，p型接合结构中的层，以及n型衬底。

14. 再颁专利

USRE45517E1 Vertical geometry InGaN LED 有权
公开(公告)号：USRE45517E1
公开(公告)日：2015-05-19
申请号：US12942673
申请日：2010-11-09
申请人： Kathleen Marie Doverspike , John Adam Edmond , Hua-shuang Kong , Heidi Marie Dieringer , David B. Slater, Jr.
发明人： Kathleen Marie Doverspike , John Adam Edmond , Hua-shuang Kong , Heidi Marie Dieringer , David B. Slater, Jr.
IPC分类号： H01L33/00 , H01L29/06
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.

15. 发明授权

US08525190B2 Conformal gel layers for light emitting diodes 有权
标题翻译：用于发光二极管的保形凝胶层
公开(公告)号：US08525190B2
公开(公告)日：2013-09-03
申请号：US13160793
申请日：2011-06-15
申请人： Matthew Donofrio , John Adam Edmond , Hua-Shuang Kong
发明人： Matthew Donofrio , John Adam Edmond , Hua-Shuang Kong
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/54 , H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/507 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2924/0002 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.
摘要翻译：发光器件包括在安装衬底上的发光二极管管芯和安装衬底上和/或发光二极管管芯上的保形凝胶层。保形凝胶层可以至少部分地填充发光二极管管芯和安装衬底之间的间隙。可以在保形凝胶层上提供荧光体层和/或模制圆顶。可以通过喷雾和/或分配在溶剂中稀释的凝胶来制造保形凝胶层。

16. 发明授权

US08247836B2 Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权
标题翻译：具有用于半导体晶片和器件的阻挡层的镍锡键合系统
公开(公告)号：US08247836B2
公开(公告)日：2012-08-21
申请号：US13035005
申请日：2011-02-25
申请人： Matthew Donofrio , David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
发明人： Matthew Donofrio , David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译：公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。

17. 发明申请

US20120193651A1 LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS 有权
标题翻译：发光装置，系统和方法
公开(公告)号：US20120193651A1
公开(公告)日：2012-08-02
申请号：US13224850
申请日：2011-09-02
申请人： John A. Edmond , Hua-Shuang Kong , Matthew Donofrio
发明人： John A. Edmond , Hua-Shuang Kong , Matthew Donofrio
IPC分类号： H01L33/08 , H01L33/48
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译：公开了发光器件，系统和方法。在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。发光装置还可以包括围绕发射区域设置的保持材料。保持材料也可以是不规则形状，并且可以分配。发光器件可以包括每个器件多于一个发射区域。

18. 发明申请

US20110180839A1 Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices 有权
标题翻译：用于半导体晶片和器件的带有阻挡层的镍锡焊接系统
公开(公告)号：US20110180839A1
公开(公告)日：2011-07-28
申请号：US13035005
申请日：2011-02-25
申请人： Matthew Donofrio , David B. Slater, JR. , John A. Edmond , Hua-Shuang Kong
发明人： Matthew Donofrio , David B. Slater, JR. , John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L33/32 , H01L23/492
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译：公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。

19. 发明授权

US07910945B2 Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权
标题翻译：具有用于半导体晶片和器件的阻挡层的镍锡键合系统
公开(公告)号：US07910945B2
公开(公告)日：2011-03-22
申请号：US11844127
申请日：2007-08-23
申请人： Matthew Donofrio , David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
发明人： Matthew Donofrio , David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L23/40
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译：公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。

20. 发明授权

US07855459B2 Modified gold-tin system with increased melting temperature for wafer bonding 有权
标题翻译：用于晶片键合的改进的金锡系统具有增加的熔化温度
公开(公告)号：US07855459B2
公开(公告)日：2010-12-21
申请号：US11534317
申请日：2006-09-22
申请人： David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
发明人： David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L23/48
CPC分类号： H01L33/0079 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/838 , H01L2224/94 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2224/83 , H01L2924/00 , H01L2924/01029 , H01L2924/01028 , H01L2924/00014
摘要： A semiconductor structure and a bonding method are disclosed that includes a device wafer, a substrate wafer, and a metal bonding system between the device wafer and the substrate wafer. The metal bonding system includes gold, tin, and nickel, and includes at least one discrete layer of gold and tin that is at least about 88 percent gold by weight.
摘要翻译：公开了一种半导体结构和接合方法，其包括在器件晶片和衬底晶片之间的器件晶片，衬底晶片和金属结合系统。金属粘合系统包括金，锡和镍，并且包括金和锡的至少一个离散层，其为至少约88重量％的金。

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