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    • 12. 发明申请
    • AC/DC MODULATION CONVERSION SYSTEM AND APPLICATION THEREOF
    • AC / DC调制转换系统及其应用
    • US20100141170A1
    • 2010-06-10
    • US12634072
    • 2009-12-09
    • Ching-Sheng YUYi-Chang LEUHsin-Yi LEE
    • Ching-Sheng YUYi-Chang LEUHsin-Yi LEE
    • H05B37/02H02M7/42
    • H02M7/1557
    • This invention discloses an AC/DC modulation conversion system, which comprises a control signal transmitter, a control signal receiver and a control signal/modulation signal converter. The control signal transmitter transmits a control signal, the control signal receiver receives the control signal, the control signal/modulation signal converter converts the control signal into a pulse width modulation signal or a DC level modulation signal. Therefore, this AC/DC modulation conversion system can be applied to controllable DC load circuits such as a controllable DC heater, a controllable DC motor or a controllable DC lamp etc for respectively controlling the temperature, speed or brightness etc.
    • 本发明公开了一种AC / DC调制转换系统,其包括控制信号发射机,控制信号接收机和控制信号/调制信号转换器。 控制信号发送器发送控制信号,控制信号接收器接收控制信号,控制信号/调制信号转换器将控制信号转换成脉宽调制信号或直流电平调制信号。 因此,该AC / DC调制转换系统可以应用于可控直流加热器,可控DC电动机或可控DC灯等可控直流负载电路,以分别控制温度,速度或亮度等。
    • 14. 发明申请
    • DOPING METHOD OF ATOMIC LAYER DEPOSITION
    • 原子层沉积的掺杂方法
    • US20130209685A1
    • 2013-08-15
    • US13487702
    • 2012-06-04
    • Ching-Shun KUHsin-Yi Lee
    • Ching-Shun KUHsin-Yi Lee
    • C23C16/04
    • C23C16/407C23C16/45525C23C16/45527C23C16/45529C23C16/45531C23C16/45534
    • A doping method of atomic layer deposition includes providing a substrate in a reaction chamber; and performing at least one atomic layer deposition cycle to form a film on a surface of the substrate. The atomic layer deposition cycle includes passing first precursors into the reaction chamber to let first atoms included in the first precursors combine with reaction sites of the substrate; and passing second precursors into the reaction chamber to let second atoms included in the second precursors combine with the reaction sites uncombined with the first atoms or substitute at least part of the first atoms to combine with the reaction sites of the substrate. The above-mentioned doping method of atomic layer deposition is capable of preparing large area and uniformity of doping film without annealing process or with low temperature annealing process.
    • 原子层沉积的掺杂方法包括在反应室中提供衬底; 以及执行至少一个原子层沉积循环以在所述衬底的表面上形成膜。 原子层沉积循环包括使第一前体进入反应室以使包含在第一前体中的第一个原子与底物的反应位点相结合; 并将第二前体通入反应室以使包含在第二前体中的第二个原子与未与第一个原子结合的反应位点结合,或者将至少部分第一个原子取代与底物的反应位点结合。 上述原子层沉积的掺杂方法能够在没有退火工艺或低温退火工艺的情况下制备掺杂膜的大面积和均匀性。