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11. 发明申请

US20120074461A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120074461A1
公开(公告)日：2012-03-29
申请号：US13235302
申请日：2011-09-16
申请人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/336 , H01L21/331 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/42376 , H01L29/4238
摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.
摘要翻译：根据实施例，半导体器件包括设置在第一半导体层上并包括第一柱和第二柱的第二半导体层。第一控制电极设置在第二半导体层的沟槽中，第二控制电极设置在第二半导体层上并连接到第一控制电极。除了第二控制电极下方的部分之外，在第二半导体层的表面上设置第一半导体区域。第二半导体区域设置在第一半导体区域的表面上，第二半导体区域与第二控制电极下方的部分分开，第三半导体区域设置在第一半导体区域上。第一主电极与第一半导体层电连接，第二主电极与第二和第三半导体区域电连接。

12. 发明申请

US20120056262A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120056262A1
公开(公告)日：2012-03-08
申请号：US13052028
申请日：2011-03-18
申请人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7839 , H01L29/0619 , H01L29/0623 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, an embedded electrode, a control electrode, a fourth semiconductor layer of the second conductivity type, a first main electrode, and a second main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The embedded electrode is provided in a first trench via a first insulating film. The first trench penetrates through the second semiconductor layer from a surface of the third semiconductor layer to reach the first semiconductor layer. The control electrode is provided above the embedded electrode via a second insulating film in the first trench. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench. The second trench penetrates through the second semiconductor layer from the surface of the third semiconductor layer to reach the first semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer. The second main electrode is provided in the second trench and connected to the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The embedded electrode is electrically connected to one of the second main electrode and the control electrode. A Schottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，第一导电类型的第三半导体层，嵌入电极，控制电极，第四半导体第二导电类型的层，第一主电极和第二主电极。第二半导体层设置在第一半导体层上。第三半导体层设置在第二半导体层上。嵌入式电极经由第一绝缘膜设置在第一沟槽中。第一沟槽从第三半导体层的表面穿过第二半导体层到达第一半导体层。控制电极通过第一沟槽中的第二绝缘膜设置在嵌入电极的上方。第四半导体层选择性地设置在第一半导体层中并连接到第二沟槽的下端。第二沟槽从第三半导体层的表面穿过第二半导体层到达第一半导体层。第一主电极电连接到第一半导体层。第二主电极设置在第二沟槽中并连接到第二半导体层，第三半导体层和第四半导体层。嵌入电极与第二主电极和控制电极中的一个电连接。在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。

13. 发明授权

US07190674B2 Apparatus for controlling packet output 失效
标题翻译：用于控制分组输出的装置
公开(公告)号：US07190674B2
公开(公告)日：2007-03-13
申请号：US10281366
申请日：2002-10-25
申请人： Takahiro Kobayakawa , Hiroaki Yamashita
发明人： Takahiro Kobayakawa , Hiroaki Yamashita
IPC分类号： H04L12/66 , H04L12/28 , H04L12/26
CPC分类号： H04L49/508 , H04L47/22 , H04L47/24 , H04L47/50 , H04L47/56 , H04L49/30 , H04L49/506
摘要： In a packet scheduler, an arithmetic-operation controlling means designates output ports in a time-sharing manner and a parallel arithmetic operation means performs an arithmetic operation common with the queues of each designated output port to obtain packet output completion due times (evaluation factors) of the top packets of queues of each output port. Intra-port selecting means selects the evaluation factor of a packet that is to be preferentially output for each output port based on the result of the arithmetic operations. Then inter-port selecting means determines one to be most-preferentially output from the top packets selected based on the selected evaluation factors and the bandwidths for the output ports. Therefore, an apparatus for controlling packet output having such a packet scheduler can realize accurately control bandwidths of a plurality of queues, high-speed processing and the reduced size thereby being incorporated in hardware.
摘要翻译：在分组调度器中，算术运算控制装置以分时方式指定输出端口，并行算术运算装置执行与各指定输出端口的队列相同的算术运算，以获得分组输出完成到期（评估因子）的每个输出端口的最高队列数据包。内部端口选择装置根据算术运算的结果，选择要对每个输出端口优先输出的分组的评估因子。然后，端口间选择装置根据所选择的评估因子和输出端口的带宽确定从最高分组选出的最优先输出。因此，具有这种分组调度器的用于控制分组输出的装置可以精确地实现多个队列的控制带宽，高速处理和减小的尺寸，从而被并入硬件。

14. 发明授权

US6097739A Data transfer rate control method and data transfer rate controller 失效
标题翻译：数据传输速率控制方法和数据传输速率控制器
公开(公告)号：US6097739A
公开(公告)日：2000-08-01
申请号：US841872
申请日：1997-05-05
申请人： Hiroaki Yamashita
发明人： Hiroaki Yamashita
IPC分类号： H04N19/423 , H04J3/07 , H04L12/28 , H04L12/70 , H04N7/24 , H04N19/00 , H04N19/70 , H04Q3/00
CPC分类号： H04N21/23611
摘要： A data transfer rate control method inserts a stuff packet in real time to resolve the problem present in an ATM transmission for MPEG data. The method, for controlling a data transfer rate at which coded data are transferred in an asynchronous transfer mode may include the steps of: forming the coded data for an AAL layer (ATM Adaptation Layer); calculating an insertion timing for insertion of a NULL packet; inserting the NULL packet into the coded data of the AAL layer in consonance with the insertion timing, obtained by the calculation, for the NULL packet; and transferring, in the asynchronous transfer mode, the coded data of the AAL layer into which the NULL packet is inserted.
摘要翻译：数据传输速率控制方法实时插入填充数据包以解决MPEG数据的ATM传输中存在的问题。用于控制以异步传送模式传送编码数据的数据传送速率的方法可以包括以下步骤：形成用于AAL层（ATM适配层）的编码数据; 计算用于插入NULL分组的插入时间; 将NULL分组插入到AAL层的编码数据中，这符合通过计算获得的用于NULL分组的插入定时; 并且在异步传送模式中传送其中插入NULL分组的AAL层的编码数据。

15. 发明授权

US5918000A Data transfer control device and method for switching memory regions between storage devices when accessing is halted 失效
标题翻译：数据传输控制装置和方法，用于在访问时切换存储设备之间的存储区域
公开(公告)号：US5918000A
公开(公告)日：1999-06-29
申请号：US539774
申请日：1995-10-05
申请人： Hiroaki Yamashita , Yasushi Inamoto , Kiichi Matsuda
发明人： Hiroaki Yamashita , Yasushi Inamoto , Kiichi Matsuda
IPC分类号： G06F13/16 , G06F3/06 , G06F11/20 , G06F13/36 , G11B20/12 , G11B20/18 , G06F11/08
CPC分类号： G06F11/2094 , G06F3/0625 , G06F3/0658 , G06F3/0689 , G11B20/1252 , G11B20/1833 , G11B20/1883 , G11B2220/20 , Y02B60/1246
摘要： A data transfer control device and controlling method in which data on a storage medium is read continuously. The data transfer control device includes M storage units each for storing respectively at least two kinds of different data among N kinds of data in memory regions, a transmission control element for transmitting the N kinds of data and a spare storage unit for storing at least one kind of data among said N kinds of data. The transfer control device includes a judging element for judging whether accessing any one of the M storage units must be halted. Switching element for switching a memory region to the spare storage unit and the remaining (M-1) storage unit when the judging element judges that accessing must be halted and then the switching element performs an accessing operation. The data transfer control device can suppress an increase in the device forming cost, power consumption, and installation area, and can increase the amount of data which can be stored according to the number of storage units installed.
摘要翻译：一种数据传送控制装置及其中持续读取存储介质上的数据的控制方法。数据传送控制装置包括M个存储单元，每个存储单元分别存储存储区域中的N种数据中的至少两种不同数据，用于发送N种数据的传输控制元件和用于存储至少一个所述N种数据中的数据种类。传送控制装置包括用于判断是否必须停止访问M个存储单元中的任何一个的判断元件。当判断元件判定该访问必须停止，然后开关元件执行访问操作时，用于将存储器区域切换到备用存储单元和剩余（M-1）个存储单元。数据传输控制装置可以抑制装置成本成本，功耗和安装面积的增加，并且可以根据安装的存储单元的数量增加可以存储的数据量。

16. 发明授权

US5173361A Stainless steel fiber reinforced composite belt 失效
标题翻译：不锈钢纤维增强复合皮带
公开(公告)号：US5173361A
公开(公告)日：1992-12-22
申请号：US642501
申请日：1991-01-17
申请人： Hiroaki Yamashita , Takashi Toyota
发明人： Hiroaki Yamashita , Takashi Toyota
IPC分类号： F16G1/28 , B29D29/00 , B32B15/02 , B32B25/02 , C08J5/04 , F16G1/12 , F16G5/06 , F16G5/10
CPC分类号： F16G5/10 , F16G1/12 , Y10S428/903 , Y10S428/909 , Y10T152/10765 , Y10T428/249942
摘要： A fiber reinforced composite belt in which a stainless steel fiber aggregate having a diameter of from 5 to 50 .mu.m and impregnated with 1 to 10% by weight of a thermosetting resin such as an epoxy resin is buried as a reinforcing material in a base material for belt, and a process for preparing the above-mentioned fiber reinforced composite belt are provided. This fiber reinforced composite belt is much more excellent in flex resistance, durability, water resistance and coefficient of linear expansion, as compared with not only a rubber belt and a synthetic resin elastomer belt but also belts reinforced by directly burying a stainless steel fiber and a steel fiber in the rubber.

17. 发明授权

US08829608B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08829608B2
公开(公告)日：2014-09-09
申请号：US13051987
申请日：2011-03-18
申请人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42372 , H01L29/66734
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层，第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。第四半导体层设置在第二半导体层和第三半导体层上。第五半导体层选择性地设置在第四半导体层的表面上。控制电极通过绝缘膜设置在沟槽中。沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。第一主电极连接到第一半导体层。第二主电极连接到第四半导体层和第五半导体层。第六半导体层设置在第四半导体层和第二半导体层之间。第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

18. 发明授权

US08759938B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08759938B2
公开(公告)日：2014-06-24
申请号：US13685019
申请日：2012-11-26
申请人： Syotaro Ono , Masaru Izumisawa , Hiroshi Ohta , Hiroaki Yamashita
发明人： Syotaro Ono , Masaru Izumisawa , Hiroshi Ohta , Hiroaki Yamashita
IPC分类号： H01L23/58
CPC分类号： H01L23/552 , H01L23/58 , H01L23/60 , H01L29/0634 , H01L29/0684 , H01L29/0696 , H01L29/1095 , H01L29/404 , H01L29/405 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a superjunction structure. The influence of external charge on device performance is suppressed using a shield electrode, field plate electrodes, and cover electrodes in various configurations. Optional embodiments include placing an interconnection film between certain electrodes and the upper surface of the superjunction structure. Cover electrodes may also be connected to various potentials to limit the effects of external charge on device performance.
摘要翻译：半导体器件包括超结构结构。使用各种结构的屏蔽电极，场板电极和覆盖电极来抑制外部电荷对器件性能的影响。可选实施例包括将互连膜放置在某些电极和超结构结构的上表面之间。覆盖电极也可以连接到各种电位以限制外部电荷对器件性能的影响。

19. 发明申请

US20130334597A1 POWER SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20130334597A1
公开(公告)日：2013-12-19
申请号：US13720344
申请日：2012-12-19
申请人： Hiroaki Yamashita , Masaru Izumisawa , Syotaro Ono , Hiroshi Ohta
发明人： Hiroaki Yamashita , Masaru Izumisawa , Syotaro Ono , Hiroshi Ohta
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0856 , H01L29/086 , H01L29/0878 , H01L29/1033 , H01L29/1095 , H01L29/4236 , H01L29/42376 , H01L29/66333 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802
摘要： A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type having an effective impurity concentration that is less than an effective impurity concentration of the first semiconductor layer arranged on the first semiconductor layer, a third semiconductor layer of a second conductivity type arranged on the second semiconductor layer, and a gate electrode formed in the first second semiconductor layer and the third semiconductor layer, wherein at least two regions are formed in the power semiconductor device, and a threshold voltage of the first region is different from a threshold voltage of the second region.

20. 发明授权

US5593577A Filter having internally threaded cover non-rotatably mounted to casing of the filter 失效
标题翻译：过滤器具有不可旋转地安装到过滤器壳体上的内螺纹盖
公开(公告)号：US5593577A
公开(公告)日：1997-01-14
申请号：US328267
申请日：1994-09-30
申请人： Koji Imai , Toshiya Wakahoi , Hiromitsu Adachi , Keiichi Terada , Hiroaki Yamashita , Hiroshi Morikawa
发明人： Koji Imai , Toshiya Wakahoi , Hiromitsu Adachi , Keiichi Terada , Hiroaki Yamashita , Hiroshi Morikawa
IPC分类号： B01D35/147 , B01D35/30
CPC分类号： B01D35/147 , B01D2201/302 , B01D2201/40 , B01D2201/4076
摘要： A filter includes a case, filtering material housed within the case, a cover which covers the open end of the case and is non-rotatable relative to the case, and an annular fastener clamping the cover to the case. The case includes a large-diameter portion at an open end of the case, the large-diameter portion including a convexity forming an engagement tab. The cover has a concavity into which the convexity is received to prevent the cover from rotating relative to the case. Moreover, the cover includes a screw thread on the outer periphery thereof. The annular fastener has a screw thread on the inner periphery thereof mated with the screw thread on the outer periphery of the cover. On the other hand, the annular fastener has a small-diameter portion engaged with the large-diameter portion of the case by which engagement and mating of the screw threads the annular fastener secures the cover to the case. By preventing relative rotation between the cover and the case, the filter can be easily installed by being screwed onto a threaded member of an automotive engine or the like.
摘要翻译：过滤器包括壳体，容纳在壳体内的过滤材料，覆盖壳体的开口端并且相对于壳体不可旋转的盖子以及将盖子夹紧到壳体的环形紧固件。该壳体包括在壳体的开口端处的大直径部分，大直径部分包括形成接合突片的凸部。盖具有凹部，凹部被接收到其中以防止盖相对于壳体旋转。此外，盖子在其外周上包括螺纹。环形紧固件在其内周上具有与螺纹外壳上的螺纹配合的螺纹。另一方面，环形紧固件具有与壳体的大直径部分接合的小直径部分，通过该小直径部分，螺纹与环形紧固件的接合和配合将盖固定到壳体。通过防止盖和壳体之间的相对旋转，可以通过旋拧到汽车发动机等的螺纹构件上来容易地安装过滤器。

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