专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07960724B2 Composition for organic thin film transistor, organic thin film transistor formed by using the same, and method for forming the organic film transistor 失效
标题翻译：有机薄膜晶体管的组成，使用该有机薄膜晶体管的有机薄膜晶体管，以及形成有机薄膜晶体管的方法
公开(公告)号：US07960724B2
公开(公告)日：2011-06-14
申请号：US12542226
申请日：2009-08-17
申请人： Yong-Young Noh , Jae Bon Koo , In-Kyu You , Kang-Jun Baeg , Dong-Yu Kim
发明人： Yong-Young Noh , Jae Bon Koo , In-Kyu You , Kang-Jun Baeg , Dong-Yu Kim
IPC分类号： H01L51/00
CPC分类号： H01L51/0558 , C08F8/30 , C08F2810/20 , H01L51/004 , H01L51/0541 , H01L51/0545 , C08F220/30 , C08F220/14
摘要： Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.
摘要翻译：提供了一种有机薄膜晶体管的组合物及其制造方法，该组合物包括含有蒽基的材料和包含马来酰亚胺基团的交联剂，使用该组合物形成的有机薄膜晶体管。

12. 发明申请

US20090152538A1 THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 有权
标题翻译：基于噻唑基的半导体化合物和使用其的有机薄膜晶体管
公开(公告)号：US20090152538A1
公开(公告)日：2009-06-18
申请号：US12325553
申请日：2008-12-01
申请人： Dong-Yu Kim , Bogyu Lim , Kang-Jun Baeg , Hyung-Gu Jeong , Seung-Hwan Oh , Hong-Ju Park
发明人： Dong-Yu Kim , Bogyu Lim , Kang-Jun Baeg , Hyung-Gu Jeong , Seung-Hwan Oh , Hong-Ju Park
IPC分类号： H01L51/30 , C07D513/02
CPC分类号： C07D513/04 , H01L51/0036 , H01L51/0071 , H01L51/0525 , H01L51/0545
摘要： Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.
摘要翻译：提供了使用噻唑的有机半导体化合物和具有由使用噻唑的有机半导体化合物形成的有机半导体层的有机薄膜晶体管。包括噻唑的新型有机半导体化合物具有液晶性和优异的热稳定性，因此提供在有机薄膜晶体管中形成有机半导体层。为此，在硅衬底上形成氧化硅层，在氧化硅层上形成包含噻唑的有机半导体层。此外，源极和漏极形成在有机半导体层的两个边缘部分上。使用有机半导体层的有机薄膜晶体管具有改善的开/关比和优异的热稳定性。此外，解决方法可以在其制造中应用。

13. 发明申请

US20080139766A1 Perfluoroalkyleneoxy group-substituted phenylethylsilane compound and polymer thereof 有权
标题翻译：全氟亚烷基氧基取代的苯基乙基硅烷化合物及其聚合物
公开(公告)号：US20080139766A1
公开(公告)日：2008-06-12
申请号：US11896472
申请日：2007-08-31
申请人： Dong-Yu Kim , Ji-Eun Ghim , Chae-Min Chun , Bo-Gyu Lim
发明人： Dong-Yu Kim , Ji-Eun Ghim , Chae-Min Chun , Bo-Gyu Lim
IPC分类号： C08F14/18 , C07F7/12 , H01L29/00
CPC分类号： H01L51/0023 , C07F7/081 , C08F36/22 , H01L29/51 , H01L51/0016 , H01L51/052 , H01L51/0545 , H01L51/102
摘要： Disclosed herein are a perfluoroalkyleneoxy group-substituted phenylethylsilane compound and a polymer thereof. The perfluoroalkyleneoxy group-substituted phenylethylsilane compound represented by Formula 1 has excellent thermal and chemical stability to be solution-processed in a monomer state, and the polymer prepared by thermally crosslinking the compound has a high resistance to organic solvents. Moreover, since an insulating layer prepared by applying the same shows improved thermal and physical properties, it is possible to manufacture organic thin-film transistors having a high on/off ratio in a simple process such as a photolithography for a large-size substrate: wherein R1, R2, R3, Z1, Z2, Z3, and n are the same as defined in the detailed description of the invention.
摘要翻译：本文公开了全氟亚烷基氧基取代的苯基乙基硅烷化合物及其聚合物。由式1表示的全氟亚烷基氧基取代的苯基乙基硅烷化合物具有优异的在单体状态下进行溶液处理的热和化学稳定性，通过热交联化合物制备的聚合物对有机溶剂具有高的耐性。此外，由于通过涂覆其制备的绝缘层显示出改善的热和物理性质，可以在诸如用于大尺寸基板的光刻的简单工艺中制造具有高开/关比的有机薄膜晶体管：其中R 1，R 2，R 3，Z 1，Z 2， Z 3，N与本发明的详细说明中所定义的相同。

14. 发明授权

US08865515B2 Preparation method for reduced graphene oxide using sulfonyl hydrazide-based reducing agent and optoelectronic devices thereof 有权
标题翻译：使用磺酰肼类还原剂还原石墨烯氧化物的制备方法及其光电器件
公开(公告)号：US08865515B2
公开(公告)日：2014-10-21
申请号：US13356965
申请日：2012-01-24
申请人： Seok In Na , Dong Yu Kim , Hye Young Koo , Jin Mun Yun , Jun Seok Yeo , Jun Kyung Kim
发明人： Seok In Na , Dong Yu Kim , Hye Young Koo , Jin Mun Yun , Jun Seok Yeo , Jun Kyung Kim
IPC分类号： H01L51/40 , B82Y10/00 , C01B31/04 , B82Y40/00 , B82Y30/00 , H01L51/00 , H01L51/44 , H01L51/52 , H01L51/50
CPC分类号： H01L51/0045 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/192 , H01L51/44 , H01L51/442 , H01L51/5088 , H01L51/5092 , H01L51/5206 , Y02E10/549 , Y02P70/521
摘要： A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.
摘要翻译：提供了通过还原石墨烯氧化物制造石墨烯薄膜的方法和使用其制造光电器件的方法。制造石墨烯薄膜的方法包括制备氧化石墨烯; 通过磺酰肼类还原剂还原氧化石墨烯来制备石墨烯; 通过将石墨烯分散在有机溶剂中制备石墨烯分散溶液; 并通过应用石墨烯分散溶液制造石墨烯薄膜。磺酰肼类还原剂可以是在本公开内容中具有化学式1的磺酰肼取代基的化合物，其中A可以是本公开的化学式2中的任何一个。

15. 发明申请

US20120190139A1 PREPARATION METHOD FOR REDUCED GRAPHENE OXIDE USING SULFONYL HYDRAZIDE-BASED REDUCING AGENT AND OPTOELECTRONIC DEVICES THEREOF 有权
标题翻译：使用基于硫代氢化物的还原剂及其光电装置减少氧化亚铁的制备方法
公开(公告)号：US20120190139A1
公开(公告)日：2012-07-26
申请号：US13356965
申请日：2012-01-24
申请人： Seok In NA , Dong Yu KIM , Hye Young KOO , Jin Mun YUN , Jun Seok YEO , Jun Kyung KIM
发明人： Seok In NA , Dong Yu KIM , Hye Young KOO , Jin Mun YUN , Jun Seok YEO , Jun Kyung KIM
IPC分类号： H01L51/56 , C01B31/02 , H01L51/48 , B82Y30/00 , B82Y40/00
CPC分类号： H01L51/0045 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/192 , H01L51/44 , H01L51/442 , H01L51/5088 , H01L51/5092 , H01L51/5206 , Y02E10/549 , Y02P70/521
摘要： A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film comprises: (a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.
摘要翻译：提供了通过还原石墨烯氧化物制造石墨烯薄膜的方法和使用其制造光电器件的方法。制造石墨烯薄膜的方法包括：（a）制备氧化石墨烯; （b）通过用磺酰肼类还原剂还原氧化石墨烯来制备石墨烯; （c）通过将石墨烯分散在有机溶剂中制备石墨烯分散溶液; 和（d）通过施加石墨烯分散溶液制造石墨烯薄膜。磺酰肼类还原剂可以是在本公开内容中具有化学式1的磺酰肼取代基的化合物，其中A可以是本公开的化学式2中的任何一个。

16. 发明授权

US07897963B2 Thiazole-based semiconductor compound and organic thin film transistor using the same 有权
标题翻译：噻唑类半导体化合物和使用其的有机薄膜晶体管
公开(公告)号：US07897963B2
公开(公告)日：2011-03-01
申请号：US12325553
申请日：2008-12-01
申请人： Dong-Yu Kim , Bogyu Lim , Kang-Jun Baeg , Hyung-Gu Jeong , Seung-Hwan Oh , Hong-Ju Park
发明人： Dong-Yu Kim , Bogyu Lim , Kang-Jun Baeg , Hyung-Gu Jeong , Seung-Hwan Oh , Hong-Ju Park
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： C07D513/04 , H01L51/0036 , H01L51/0071 , H01L51/0525 , H01L51/0545
摘要： Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.
摘要翻译：提供了使用噻唑的有机半导体化合物和具有由使用噻唑的有机半导体化合物形成的有机半导体层的有机薄膜晶体管。包括噻唑的新型有机半导体化合物具有液晶性和优异的热稳定性，因此提供在有机薄膜晶体管中形成有机半导体层。为此，在硅衬底上形成氧化硅层，在氧化硅层上形成包含噻唑的有机半导体层。此外，源极和漏极形成在有机半导体层的两个边缘部分上。使用有机半导体层的有机薄膜晶体管具有改善的开/关比和优异的热稳定性。此外，解决方法可以在其制造中应用。

17. 发明申请

US20090155459A1 Method of forming active layer of organic solar cell using spray coating method 审中-公开
标题翻译：使用喷涂法形成有机太阳能电池有源层的方法
公开(公告)号：US20090155459A1
公开(公告)日：2009-06-18
申请号：US12222926
申请日：2008-08-20
申请人： Doojin Park , Dong-Yu Kim , Jo Jang , Seok-Soon Kim
发明人： Doojin Park , Dong-Yu Kim , Jo Jang , Seok-Soon Kim
IPC分类号： B05D5/12
CPC分类号： H01L51/0003 , H01L51/0036 , H01L51/4253 , Y02E10/549
摘要： A method of forming an active layer of an organic solar cell using spray coating is provided. The method includes dissolving at least one material in a solvent to form a solution, preparing a coating material by diluting the solution, and spraying the coating material on a subject for spray coating. The spray coating does not need a vacuum chuck, and thus can be applied to a large-sized substrate, and a roll-to-roll method.
摘要翻译：提供了使用喷涂形成有机太阳能电池的有源层的方法。该方法包括将至少一种材料溶解在溶剂中以形成溶液，通过稀释溶液来制备涂料，并将涂料喷涂在受试者上用于喷涂。喷涂不需要真空吸盘，因此可以应用于大尺寸基板，以及卷对卷方法。

18. 发明申请

US20090001398A1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090001398A1
公开(公告)日：2009-01-01
申请号：US12155877
申请日：2008-06-11
申请人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
发明人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/16 , H01L33/22
摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.
摘要翻译：提供了可以通过简单的工艺制造并且具有优异的光提取效率的半导体发光器件和制造具有高再现性和高生产量的半导体发光器件的方法。根据本发明的一个方面，具有基板和叠层体的半导体发光器件依次层叠在基板上，其中第一导电型半导体层，有源层和第二导电类型半导体层包括二氧化硅颗粒层; 以及形成在二氧化硅粒子层的下部的不平坦部。

19. 发明申请

US20070269918A1 METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造基于氮化物的半导体发光器件的方法
公开(公告)号：US20070269918A1
公开(公告)日：2007-11-22
申请号：US11690504
申请日：2007-03-23
申请人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
发明人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.
摘要翻译：提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。包括n掺杂半导体层，有源层，p掺杂半导体层，n电极和p电极的氮化物系半导体发光元件的制造方法包括：形成偶氮苯官能化的聚合物膜通过从由n掺杂半导体层，p掺杂半导体层，n电极和p电极组成的组中选择一层作为基底层，在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上，形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层，并除去偶氮苯官能化的聚合物膜。

20. 发明授权

US07531465B2 Method of manufacturing nitride-based semiconductor light emitting device 有权
标题翻译：氮化物系半导体发光元件的制造方法
公开(公告)号：US07531465B2
公开(公告)日：2009-05-12
申请号：US11690504
申请日：2007-03-23
申请人： Jae-hee Cho , Cheol-soo Sone , Dong-yu Kim , Hyun-gi Hong , Seok-soon Kim
发明人： Jae-hee Cho , Cheol-soo Sone , Dong-yu Kim , Hyun-gi Hong , Seok-soon Kim
IPC分类号： H01L21/31
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.
摘要翻译：提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。包括n掺杂半导体层，有源层，p掺杂半导体层，n电极和p电极的氮化物系半导体发光元件的制造方法包括：形成偶氮苯官能化的聚合物膜通过从由n掺杂半导体层，p掺杂半导体层，n电极和p电极组成的组中选择一层作为基底层，在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上，形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层，并除去偶氮苯官能化的聚合物膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式