专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20090268179A1 METHOD OF ALIGNING AN EXPOSURE APPARATUS, METHOD OF EXPOSING A PHOTORESIST FILM USING THE SAME AND EXPOSURE APPARATUS FOR PERFORMING THE METHOD OF EXPOSING A PHOTORESIST FILM 有权
标题翻译：曝光装置的方法，使用该曝光装置的曝光胶片的方法和用于实施曝光胶片的方法的曝光装置
公开(公告)号：US20090268179A1
公开(公告)日：2009-10-29
申请号：US12402416
申请日：2009-03-11
申请人： Sang-Hyun Park , Sang-Don Jang , Dong-Seok Baek , Ki-Hyun Kim , Sang-Min Lee , Dong-Min Kim
发明人： Sang-Hyun Park , Sang-Don Jang , Dong-Seok Baek , Ki-Hyun Kim , Sang-Min Lee , Dong-Min Kim
IPC分类号： G03B27/32 , G01B11/00 , G03B27/42
CPC分类号： G03F9/7069 , G03B27/32 , G03B27/42 , G03F7/70258 , G03F7/70275 , G03F7/70791 , G03F9/7003 , G03F9/7011 , G03F9/7015 , G03F9/7019 , G03F9/7088
摘要： An origin of a reference coordinate system is assigned to one of a plurality of center points, and center point coordinates according to the reference coordinate system are assigned to remaining center points, so that reference marks successively correspond to center points of a plurality of microscopes fixed to a base. Beam position detection marks disposed between the reference marks with exposure points of exposure heads fixed to the base are crossed to assign beam coordinates according to the reference coordinate system to the exposure points. Thus, alignment may be easily and accurately performed, and is effective for increasingly larger apparatuses.
摘要翻译：参考坐标系的原点被分配给多个中心点之一，并且根据参考坐标系的中心点坐标被分配给剩余的中心点，使得参考标记连续对应于固定的多个显微镜的中心点到一个基地将布置在参考标记与固定到基座的曝光头的曝光点之间的光束位置检测标记交叉，以将根据参考坐标系的光束坐标分配给曝光点。因此，可以容易且准确地进行对准，并且对于越来越大的装置是有效的。

12. 发明授权

US07508098B2 Transfer apparatus 有权
标题翻译：转运设备
公开(公告)号：US07508098B2
公开(公告)日：2009-03-24
申请号：US11057144
申请日：2005-02-15
申请人： Suk-won Lee , Byung-il Ahn , Dong-woo Kang , Ki-hyun Kim , Dae-gab Gweon , Dong-min Kim
发明人： Suk-won Lee , Byung-il Ahn , Dong-woo Kang , Ki-hyun Kim , Dae-gab Gweon , Dong-min Kim
IPC分类号： H02K41/00
CPC分类号： H02K41/0354 , H02K2201/18
摘要： A transfer apparatus includes at least four fine actuators each having a coil assembly with a wound coil, and a pair of movable magnets having different polarities and spaced from each other to interpose the coil assembly therebetween, a coil supporter to support the at least four coil assemblies so that the fine actuators are arranged in a pair of groups thereof symmetrically with respect to a predetermined straight line, a magnet supporter to support the at least four movable magnets corresponding to the respective coil assemblies, and a controller to control the fine actuator to move one of the coil supporter and the magnet supporter with respect to the other one. With this configuration, a transfer apparatus can perform a super-precision positioning control by decreasing a positioning control error.
摘要翻译：传送装置包括至少四个细致的致动器，每个致动器具有卷绕线圈的线圈组件和一对具有不同极性并且彼此间隔开以将线圈组件插入其间的可动磁体，支撑至少四个线圈组件，使得精细致动器相对于预定的直线对称地布置成一对组，用于支撑与各个线圈组件相对应的至少四个可动磁体的磁体支撑件，以及控制器，以将精细致动器控制为相对于另一个移动线圈支撑件和磁体支撑件中的一个。通过这种结构，转印装置可以通过降低定位控制误差来进行超精密定位控制。

13. 发明授权

US07313036B2 Memory device having open bit line architecture for improving repairability and method of repairing the same 失效
标题翻译：具有用于提高可修复性的开放位线架构的存储器件及其修复方法
公开(公告)号：US07313036B2
公开(公告)日：2007-12-25
申请号：US11260760
申请日：2005-10-27
申请人： Dong Min Kim
发明人： Dong Min Kim
IPC分类号： G11C7/00
CPC分类号： G11C29/816 , G11C11/401 , G11C29/808
摘要： In a memory device having an open bit line architecture for improving repairability and a method of repairing the memory device, redundant memory cells used to repair defective cells are included even in first and second edge sub-arrays that are arranged at the edges of a memory array. Further, memory cells connected to some of the bit lines in a normal sub-array can be replaced with redundant memory cells included in the first edge sub-array, and memory cells connected to the remaining bit lines can be replaced with redundant memory cells included in the second edge sub-array. Therefore, in the memory device having an open bit line architecture according to the present invention, if all of the redundant memory cells included in normal sub-arrays have been exhausted through replacement, defective cells can be repaired using the redundant memory cells included in the edge sub-arrays. Therefore, the memory device and method of repairing the memory device according to the present invention are advantageous in that they can remarkably improve repairability.
摘要翻译：在具有用于提高可修复性的开放位线架构的存储器件和修复存储器件的方法中，即使在布置在存储器的边缘的第一和第二边缘子阵列中，也包括用于修复有缺陷单元的冗余存储单元数组。此外，连接到正常子阵列中的一些位线的存储器单元可以被包括在第一边缘子阵列中的冗余存储器单元替代，并且连接到其余位线的存储器单元可以被包括的冗余存储器单元替代在第二边缘子阵列中。因此，在根据本发明的具有开放位线架构的存储器件中，如果包括在正常子阵列中的所有冗余存储单元已经通过替换被耗尽，则可以使用包括在边缘子阵列。因此，根据本发明的存储装置和修复存储装置的方法的优点在于它们可以显着提高可修复性。

14. 发明申请

US20190138473A1 SEMICONDUCTOR DEVICES INCLUDING COMMAND PRIORITY POLICY MANAGEMENT AND RELATED SYSTEMS 审中-公开
公开(公告)号：US20190138473A1
公开(公告)日：2019-05-09
申请号：US16005063
申请日：2018-06-11
申请人： Dong-Min Kim , Jeong-woo Park , Wook Han Jeong , Jin Hwan Choi
发明人： Dong-Min Kim , Jeong-woo Park , Wook Han Jeong , Jin Hwan Choi
IPC分类号： G06F13/26 , G06F13/10
CPC分类号： G06F13/26 , G06F13/102
摘要： Provided is a semiconductor device and a semiconductor system. A semiconductor device can include a command priority policy manager circuit which generates command priority policy information including a command priority compliance policy for a command directed to a device. A host interface circuit, can be coupled to the command priority policy manager circuit to receive the command priority policy information from the command priority policy manager circuit, where the host interface circuit operable to transmit the command priority policy information via an electrical interface to the device.

15. 发明授权

US09036406B2 Magneto-resistive memory device including source line voltage generator 有权
标题翻译：磁阻存储器件包括源极线电压发生器
公开(公告)号：US09036406B2
公开(公告)日：2015-05-19
申请号：US13832101
申请日：2013-03-15
申请人： Hye-Jin Kim , Sang-Kyu Kang , Dong-Hyun Sohn , Dong-Min Kim , Kyu-Chan Lee
发明人： Hye-Jin Kim , Sang-Kyu Kang , Dong-Hyun Sohn , Dong-Min Kim , Kyu-Chan Lee
IPC分类号： G11C11/00 , G11C11/16 , G11C5/14
CPC分类号： G11C11/1675 , G11C5/147 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1697
摘要： A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.
摘要翻译： MRAM包括自旋转移转矩磁随机存取存储器（STT-MRAM）单元的存储单元阵列和通常连接到多个STT-MRAM单元的源极线。源极线电压发生器响应于外部电源电压产生源极线驱动电压，并将源极线驱动电压提供给源极线。

16. 发明授权

US08981353B2 Photocrosslinkable polyimide polymer, manufacturing methods for the same memory devices using the same 有权
标题翻译：可光交联聚酰亚胺聚合物，使用其的相同存储器件的制造方法
公开(公告)号：US08981353B2
公开(公告)日：2015-03-17
申请号：US13639530
申请日：2011-03-31
申请人： Moonhor Ree , Samdae Park , Suk Gyu Ham , Jin Chul Kim , Yong-gi Ko , Jun Man Choi , Taek Joon Lee , Dong Min Kim , Kyungtae Kim , Wonsang Kwon
发明人： Moonhor Ree , Samdae Park , Suk Gyu Ham , Jin Chul Kim , Yong-gi Ko , Jun Man Choi , Taek Joon Lee , Dong Min Kim , Kyungtae Kim , Wonsang Kwon
IPC分类号： H01L35/24 , H01L51/00 , C08G73/10 , G11C13/00 , H01L51/05 , G11C13/04
CPC分类号： H01L51/0035 , C08G73/101 , G11C13/0016 , G11C13/04 , G11C2213/15 , G11C2213/72 , H01L51/0002 , H01L51/0591 , H01L51/0595
摘要： The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.
摘要翻译：本发明涉及一种聚合物记忆装置及其制备方法，涉及能够用于聚合物存储装置的新颖的可光致交联的高分子化合物，涉及一种新颖的非易失性存储装置，其中在上电极和下电极包括光可交联聚酰亚胺聚合物及其制备方法。在聚合物存储装置中，可光交联聚酰亚胺聚合物用作有源层。

17. 发明授权

US08645790B2 Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device 有权
标题翻译：使用错误检测码的数据处理装置和方法，补偿数据偏移的方法，以及具有数据处理装置的半导体装置
公开(公告)号：US08645790B2
公开(公告)日：2014-02-04
申请号：US13239156
申请日：2011-09-21
申请人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
发明人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
IPC分类号： H03M13/00
CPC分类号： H03M13/09 , H04L1/0061
摘要： A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial. A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.
摘要翻译：一种用于发送第一数据的数据处理装置包括被配置为提供第一数据的数据生成器，循环冗余校验（CRC）发生器，被配置为生成具有响应于切换信息修改其二进制值的至少一个比特的至少一个比特的CRC信息以及数据发送器，被配置为组合CRC信息和第一数据作为组合数据，并串行输出组合数据。用于发送第一数据的数据处理方法包括产生第一数据的步骤，产生具有响应于切换信息修改其二进制值的至少一个比特的循环冗余校验（CRC）信息的步骤，以及步骤通过组合生成的CRC信息和第一数据作为组合数据来生成组合数据，并串行输出组合数据。

18. 发明授权

US08548092B2 Method and apparatus for reducing peak to average power ratio using peak windowing 有权
标题翻译：使用峰值窗口降低峰均功率比的方法和装置
公开(公告)号：US08548092B2
公开(公告)日：2013-10-01
申请号：US13004271
申请日：2011-01-11
申请人： In-Tae Kang , Jung-Hwa Bae , Jung-Uk Woo , Shin-Ho Kim , Sang-Min Bae , Jong-Han Lim , Dong-Min Kim , Bo-Rham Lee
发明人： In-Tae Kang , Jung-Hwa Bae , Jung-Uk Woo , Shin-Ho Kim , Sang-Min Bae , Jong-Han Lim , Dong-Min Kim , Bo-Rham Lee
IPC分类号： H04K1/02
CPC分类号： H04L27/2624
摘要： A method and apparatus for reducing a Peak to Average Power Ratio (PAPR) using peak windowing is provided. In the apparatus, an absolute value calculator calculates an absolute value of an input signal, a subtractor subtracts a predetermined clipping threshold level from the absolute value, a smoothing unit performs smoothing on the subtracted signal according to a predetermined smoothing scheme and outputs a first smoothed signal, an adder adds the first smoothed signal to the clipping threshold level, an inverse calculator outputs a second smoothed signal by multiplying the clipping threshold level by an inverse of the added signal, and a multiplier outputs a final PAPR-reduced signal by multiplying the input signal by the second smoothed signal. The method and apparatus address an overcompensation problem while processing signals having a large bandwidth and a high data rate without delay, thereby minimizing the clipping influences on Bit Error Rate (BER) and Adjacent Channel Leakage Ratio (ACLR) performances.
摘要翻译：提供了一种使用峰值窗口降低峰均功率比（PAPR）的方法和装置。在设备中，绝对值计算器计算输入信号的绝对值，减法器根据绝对值减去预定的限幅阈值电平，平滑单元根据预定的平滑方案对减法信号进行平滑处理，并输出第一个平滑信号，加法器将第一平滑信号与削波阈值电平相加，逆计算器通过将削波阈值电平乘以相加信号的倒数来输出第二平滑信号，乘法器将最终的PAPR降低信号乘以输入信号由第二平滑信号。该方法和装置在不延迟地处理具有大带宽和高数据速率的信号的同时解决过度补偿问题，从而最小化对误码率（BER）和相邻信道泄漏比（ACLR）性能的削波影响。

19. 发明申请

US20130088912A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20130088912A1
公开(公告)日：2013-04-11
申请号：US13535583
申请日：2012-06-28
申请人： Jong-pil SON , Dong-min KIM
发明人： Jong-pil SON , Dong-min KIM
IPC分类号： G11C7/06 , G11C11/24 , G11C7/00
CPC分类号： G11C7/08 , G11C11/4091 , G11C11/4094 , G11C11/4099
摘要： A semiconductor memory device includes a first bit line to which a first memory cell is connected, and a second bit line to which a second memory cell is connected, the second bit line being complementary to the first bit line, a sense amplifier that includes a first transistor and a second transistor connected in series between the first bit line and the second bit line, the sense amplifier including a first node between the first transistor and the second transistor, a gate of the first transistor being connected to the second bit line, and a gate of the second transistor being connected to the first bit line, and a voltage providing unit that provides a first voltage to the first node during presensing, and provides a second voltage, different from the first voltage, to the first node during main sensing.
摘要翻译：半导体存储器件包括第一存储器单元连接到的第一位线和连接第二存储器单元的第二位线，第二位线与第一位线互补，读出放大器包括：第一晶体管和第二晶体管串联连接在第一位线和第二位线之间，读出放大器包括第一晶体管和第二晶体管之间的第一节点，第一晶体管的栅极连接到第二位线，并且所述第二晶体管的栅极连接到所述第一位线，以及电压提供单元，其在预定期间向所述第一节点提供第一电压，并且在所述第一节点期间在所述第一节点期间向所述第一节点提供与所述第一电压不同的第二电压感应。

20. 发明申请

US20120125215A1 Roll Printing Apparatus 有权
标题翻译：卷筒印刷设备
公开(公告)号：US20120125215A1
公开(公告)日：2012-05-24
申请号：US13303305
申请日：2011-11-23
申请人： Jung Woo Cho , Dae Jung Kim , Dong Min Kim , Sin Kwon , Jung Woo Seo
发明人： Jung Woo Cho , Dae Jung Kim , Dong Min Kim , Sin Kwon , Jung Woo Seo
IPC分类号： B41F35/02
CPC分类号： B41F35/00 , B41F17/26 , B41P2235/26 , B41P2235/27 , H05K3/1275
摘要： According to example embodiments, a roll printing apparatus includes a cleaning device in which a cleaning nozzle unit and a spray nozzle unit are integrated so that both a reverse offset process and a cliche cleaning process may be achieved in the roll printing apparatus. The roll printing apparatus may include a base plate, a blanket roll to transfer an ink material to a cliche and a substrate, a blanket roll supporter located on the base plate to support the blanket roll, a cliche table located on the base plate to fix and move the cliche, a substrate table located on the base plate to fix the substrate, and the cleaning device installed on the base plate to clean the cliche. The cleaning device may include a cleaning nozzle unit to spray a cleaning solution and a spray nozzle unit to spray DIW, which are integrated.
摘要翻译：根据示例性实施例，卷筒印刷装置包括清洁装置，其中清洁喷嘴单元和喷嘴单元被整合，使得可以在卷筒印刷装置中实现反向偏移处理和清晰处理。卷筒印刷装置可以包括基板，用于将油墨材料转印到纸板和基板的橡皮布辊，位于基板上以支撑橡皮布辊的覆盖辊支撑件，位于基板上的陈列台，以固定并移动底板，位于基板上的基板台以固定基板，以及安装在基板上的清洁装置以清洁陈列架。清洁装置可以包括用于喷射清洁溶液的清洁喷嘴单元和喷射单元以喷射集成的DIW。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式