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    • 11. 发明授权
    • Backlight unit and liquid crystal display including the same
    • 背光单元和液晶显示器包括相同的
    • US08830151B2
    • 2014-09-09
    • US13368287
    • 2012-02-07
    • Dong Pyo KimKyu Ha Baek
    • Dong Pyo KimKyu Ha Baek
    • G09G3/36
    • G09G3/3413G09G3/3648
    • Provided are a backlight unit capable of improving light efficiency and acquiring a high-luminance image by implementing a color image without using a color filter having the large light loss and a liquid crystal display including the same. The backlight unit includes: a white light source generating white light, a light guide plate into which the white light is inputted, a blue phosphor sheet formed above the light guide plate and transmitting the white light, and a multi-color phosphor sheet formed on the same plane above the blue phosphor sheet and including a plurality of red phosphor layers, green phosphor layers, and transparent layers which transmit the light transmitted through the blue phosphor sheet.
    • 提供一种背光单元,其能够通过在不使用具有大光损失的滤色器的情况下实现彩色图像和包括该彩色滤光器的液晶显示器来提高光效率并获取高亮度图像。 背光单元包括:产生白光的白光源,输入白光的导光板,形成在导光板上方并透射白光的蓝色荧光体片;以及多色荧光体片,形成在 在蓝色荧光体片上方的同一平面,并且包括多个红色荧光体层,绿色荧光体层和透射透过蓝色荧光体片的光的透明层。
    • 17. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US07998862B2
    • 2011-08-16
    • US12689344
    • 2010-01-19
    • Kunsik ParkKyu-Ha BaekLee-Mi DoDong-Pyo KimJi Man Park
    • Kunsik ParkKyu-Ha BaekLee-Mi DoDong-Pyo KimJi Man Park
    • H01L21/4763H01L21/44
    • H01L21/76898H01L21/2885
    • A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.
    • 一种制造半导体器件的方法包括在半导体衬底中形成通孔,在通孔的内侧形成隔离层,在半导体衬底的上部和通孔的内侧形成扩散阻挡层 形成隔离层的孔,在形成有扩散阻挡层的半导体衬底上布置含有带电荷的金属颗粒的溶剂,并通过使用外力移动金属颗粒来填充通孔。 所施加的外力包括导致电流在半导体衬底和溶剂之间流动的电压,施加在半导体衬底和溶剂之间的电场或施加在半导体衬底和溶剂之间的磁场。