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    • 12. 发明授权
    • Lower substrate, display apparatus having the same and method of manufacturing the same
    • 下基板,具有相同的显示装置及其制造方法
    • US07309922B2
    • 2007-12-18
    • US10968825
    • 2004-10-19
    • Hyun-Young KimJoo-Sun YoonBong-Ju KimSeung-Gyu Tae
    • Hyun-Young KimJoo-Sun YoonBong-Ju KimSeung-Gyu Tae
    • H01L29/40
    • G02F1/133555G02F1/133371G02F1/136227H01L27/12
    • In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.
    • 在下基板中,具有下基板的显示装置和下基板的制造方法,下基板包括像素区域和电路区域。 图像显示在像素区域中。 第一信号电极设置在电路区域中。 第一绝缘层包括第一信号电极暴露的开口。 第二信号电极设置在电路区域中的第一绝缘层上,并与第一信号电极间隔开。 第二绝缘层设置在第一绝缘层上,并且包括接触孔,第一和第二信号电极通过该接触孔露出。 导电层将第一信号电极与第二信号电极电连接。 因此,简化了制造工艺,使得下基板的产量增加。
    • 13. 发明授权
    • Method for manufacturing thin film transistor array panel for display device
    • 用于制造显示装置的薄膜晶体管阵列面板的方法
    • US07129105B2
    • 2006-10-31
    • US10509481
    • 2002-09-18
    • Joo-Sun YoonBong-Ju KimSeung-Gyu TaeHyun-Young Kim
    • Joo-Sun YoonBong-Ju KimSeung-Gyu TaeHyun-Young Kim
    • H01L21/00H01L21/84
    • G02F1/13458G02F1/133553G02F1/133555G02F1/136227G02F2001/136236
    • A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire inducing data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A protective layer made of silicon nitride is deposited on the substrate, and an organic insulating layer made of a photosensitive organic insulating material is coated on the protective layer. The organic insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the protective layer opposite the drain electrodes. Subsequently, the surface of the organic insulating layer is treated using inactive gas such as Ar, and then the protective layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide or indium-zinc-oxide is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes.
    • 在基板上形成包括栅极线,栅极电极和栅极焊盘并沿横向延伸的栅极线。 此后形成栅极绝缘层,并且在其上顺序地形成半导体层和欧姆接触层。 导电材料被沉积并图案化以形成数据线,其引导与栅极线,源电极,漏电极和数据焊盘相交的数据线。 在衬底上沉积由氮化硅制成的保护层,并且将由光敏有机绝缘材料制成的有机绝缘层涂覆在保护层上。 有机绝缘层被图案化以在其表面上形成不平坦图案,并且暴露出与漏电极相对的保护层的第一接触孔。 随后,使用诸如Ar的惰性气体处理有机绝缘层的表面,然后使用光致抗蚀剂图案通过光蚀刻将保护层与栅极绝缘层一起构图,以形成分别暴露漏电极,栅极 垫和数据垫。 接下来,沉积和图案化氧化铟锡或氧化铟锌,以形成分别连接到漏电极,栅极焊盘和数据焊盘的透明电极,辅助栅极焊盘和辅助数据焊盘。 最后,沉积并图案化反射导电材料以形成在透明电极上的像素区域中具有相应孔的反射膜。
    • 14. 发明申请
    • Method for manufacturing thin film transistor array panel for display device
    • 用于制造显示装置的薄膜晶体管阵列面板的方法
    • US20050170548A1
    • 2005-08-04
    • US10509481
    • 2002-09-18
    • Joo-Sun YoonBong-Ju KimSeung-Gyu TaeHyun-Young Kim
    • Joo-Sun YoonBong-Ju KimSeung-Gyu TaeHyun-Young Kim
    • G02F1/1333G02F1/1335G02F1/1343G02F1/1345G02F1/1362G02F1/1368H01L21/84
    • G02F1/13458G02F1/133553G02F1/133555G02F1/136227G02F2001/136236
    • A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire inducing data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A protective layer made of silicon nitride is deposited on the substrate, and an organic insulating layer made of a photosensitive organic insulating material is coated on the protective layer. The organic insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the protective layer opposite the drain electrodes. Subsequently, the surface of the organic insulating layer is treated using inactive gas such as Ar, and then the protective layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide or indium-zinc-oxide is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes.
    • 在基板上形成包括栅极线,栅极电极和栅极焊盘并沿横向延伸的栅极线。 此后形成栅极绝缘层,并且在其上顺序地形成半导体层和欧姆接触层。 导电材料被沉积并图案化以形成数据线,其引导与栅极线,源电极,漏电极和数据焊盘相交的数据线。 在衬底上沉积由氮化硅制成的保护层,并且将由光敏有机绝缘材料制成的有机绝缘层涂覆在保护层上。 有机绝缘层被图案化以在其表面上形成凹凸图案,并且暴露出与漏电极相对的保护层的第一接触孔。 随后,使用诸如Ar的惰性气体处理有机绝缘层的表面,然后使用光致抗蚀剂图案通过光蚀刻将保护层与栅极绝缘层一起构图,以形成分别暴露漏电极,栅极 垫和数据垫。 接下来,沉积和图案化氧化铟锡或氧化铟锌,以形成分别连接到漏电极,栅极焊盘和数据焊盘的透明电极,辅助栅极焊盘和辅助数据焊盘。 最后,沉积并图案化反射导电材料以形成在透明电极上的像素区域中具有相应孔的反射膜。
    • 16. 发明授权
    • Robot cleaner
    • 机器人清洁剂
    • US08732901B2
    • 2014-05-27
    • US13263002
    • 2009-07-06
    • In-Bo ShimSung-Guen KimByung-Doo YimBong-Ju KimJi-Hoon Sung
    • In-Bo ShimSung-Guen KimByung-Doo YimBong-Ju KimJi-Hoon Sung
    • A47L9/10
    • A47L5/28A47L9/00A47L9/1454A47L9/1481A47L2201/00
    • Provided is a robot cleaner, and more particularly to a robot cleaner for shielding particularly an air inlet of a foreign material storage unit. The robot cleaner includes a main body including a drive unit for providing a suction force, a main cover for shielding a side of the main body, a foreign material storage unit separably disposed on the main cover, the foreign material storage unit having an air inlet for introducing air containing foreign materials, a foreign material cover disposed on the main cover, the foreign material cover selectively shielding a side of the foreign material storage unit, and a shield member disposed on the foreign material storage unit, the shield member selectively shielding the air inlet.
    • 本发明提供一种机器人清洁器,更具体地涉及用于特别屏蔽异物存储单元的进气口的机器人清洁器。 机器人清洁器包括主体,主体包括用于提供吸力的驱动单元,用于屏蔽主体侧的主盖,可分离地设置在主盖上的异物存储单元,异物存储单元具有空气入口 用于引入含有异物的空气,设置在主盖上的异物盖,异物盖选择性地屏蔽异物存储单元的一侧,以及设置在异物存储单元上的屏蔽构件,屏蔽构件选择性地屏蔽 空气入口。
    • 17. 发明授权
    • Organic light-emitting display device and method of manufacturing the same
    • 有机发光显示装置及其制造方法
    • US08633054B2
    • 2014-01-21
    • US13298738
    • 2011-11-17
    • Bong-Ju Kim
    • Bong-Ju Kim
    • H01L51/52H01L51/56H01L33/44
    • H01L27/3246H01L27/3248
    • In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: a substrate including a transistor region; a buffer layer and a semiconductor layer sequentially formed on the substrate; a gate electrode formed on the semiconductor layer; an interlayer insulating film formed on the gate electrode; source and drain electrodes, each formed on the interlayer insulating film and having a portion penetrating the interlayer insulating film so as to contact the semiconductor layer; a mask pattern formed on each of the source and drain electrodes; and a pixel defined layer formed on the mask pattern.
    • 在有机发光显示装置及其制造方法中,有机发光显示装置包括:具有晶体管区域的基板; 缓冲层和顺序形成在所述基板上的半导体层; 形成在所述半导体层上的栅电极; 形成在栅电极上的层间绝缘膜; 源电极和漏电极,各自形成在层间绝缘膜上,并且具有穿过层间绝缘膜以与半导体层接触的部分; 在每个源极和漏极上形成的掩模图案; 以及形成在掩模图案上的像素限定层。