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11. 发明授权

US5517425A Method of discriminating equilibrium characteristics of hydrogen absorbing alloys 失效
标题翻译：鉴别吸氢合金的平衡特性的方法
公开(公告)号：US5517425A
公开(公告)日：1996-05-14
申请号：US305802
申请日：1994-09-13
申请人： Shin Fujitani , Akio Furukawa , Ikuo Yonezu , Toshihiko Saito
发明人： Shin Fujitani , Akio Furukawa , Ikuo Yonezu , Toshihiko Saito
IPC分类号： G01N7/16 , G01N33/20 , G01N7/00 , G06F19/00
CPC分类号： G01N7/16 , G01N33/20
摘要： The plateau region of P-C-T isotherm of a hydrogen absorbing alloy between the .alpha. phase region and .beta. phase region thereof is expressed by a normal cumulative distribution function wherein hydrogen content X is taken as frequency and the logarithm of equilibrium hydrogen pressure as a random variable. Parameters such as standard deviation .sigma. of the function are determined by numerical analysis based on measured data as to the equilibrium hydrogen pressure and hydrogen content of the plateau region of the alloy to be evaluated. Whether the equilibrium characteristics of the alloy are acceptable is determined using the parameters as evaluation criteria.
摘要翻译：在α相区域和β相区域之间的吸氢合金的P-C-T等温线的平稳区域由通常的累积分布函数表示，其中氢含量X作为频率，平衡氢压力的对数作为随机变量。通过基于待评价合金的平台氢平衡压力和氢含量的测量数据的数值分析来确定功能的标准偏差σ等参数。使用参数作为评价标准来确定合金的平衡特性是否可接受。

12. 发明授权

US5441826A Hydrogen-absorbing alloy electrode 失效
标题翻译：吸氢合金电极
公开(公告)号：US5441826A
公开(公告)日：1995-08-15
申请号：US189172
申请日：1994-01-31
申请人： Hiroshi Watanabe , Akio Furukawa , Shin Fujitani , Ikuo Yonezu , Takahiro Isono
发明人： Hiroshi Watanabe , Akio Furukawa , Shin Fujitani , Ikuo Yonezu , Takahiro Isono
IPC分类号： H01M4/38 , H01M4/02
CPC分类号： H01M4/383 , Y10S420/90
摘要： Three types of novel hydrogen-absorbing alloy electrodes A, B and C usable for metal hydride secondary batteries are provided. All three types are represented by the general formula AB.sub.x wherein A represents Ti or elements that principally comprise Ti and generate heat upon absorption of hydrogen, B represents Mo and Ni or elements that principally comprise Mo and Ni and absorb heat upon absorption of hydrogen and 0.5.ltoreq.X.ltoreq.2, and are readily producible and difficult to undergo cycle deterioration and need only short activation treatment time. (A) uses a hydrogen-absorbing alloy obtained by quenching and solidifying an alloy melt under an atmosphere of a reducing gas containing hydrogen at a cooling rate of at least 1.times.10.sup.3 .degree. C./sec and having on the surface thereof a hydride layer; (B) uses a hydrogen-absorbing alloy having a composite phase structure comprising a main phase and a subphase, the average areal ratio of said subphase to said main phase in any cross-section of said alloy being 5 to 20%; and (C) uses a hydrogen-absorbing alloy having a composite structure comprising a main phase and subphase, said main phase comprising crystallites having a major axis length (a) of 0.8 to 6 .mu.m and a ratio of the major axis length (a) to minor axis ratio (b), a/b, of not more than 3.
摘要翻译：提供了可用于金属氢化物二次电池的三种新型吸氢合金电极A，B和C。所有三种类型由通式ABx表示，其中A表示Ti或主要包含Ti并且在吸收氢时产生热量的元素，B表示Mo和Ni或主要包含Mo和Ni的元素，并且吸收氢和0.5时吸收热量

13. 发明授权

US5277998A Hydrogen-absorbing alloy electrode 失效
标题翻译：吸氢合金电极
公开(公告)号：US5277998A
公开(公告)日：1994-01-11
申请号：US876721
申请日：1992-04-09
申请人： Akio Furukawa , Fusago Mizutaki , Ikuo Yonezu , Toshihiko Saitoh , Nobuhiro Furukawa
发明人： Akio Furukawa , Fusago Mizutaki , Ikuo Yonezu , Toshihiko Saitoh , Nobuhiro Furukawa
IPC分类号： H01M4/24 , C01B3/00 , C22C14/00 , H01M4/38 , H01M4/58 , H01M10/52
CPC分类号： C01B3/0078 , H01M4/383 , Y02E60/327 , Y10S420/90
摘要： Disclosed is a hydrogen-absorbing alloy electrode including a hydrogen-absorbing alloy capable of absorbing and desorbing hydrogen reversibly, the electrode being characterized in that the hydrogen-absorbing alloy forms a multi-phase structure composed of at least these three phases, a main alloy phase, an alloy phase of Ti.sub.2 Ni system cubic-structure and an alloy phase of Ti-Ni system monoclinic-structure, and the main alloy phase has TiMo-based crystalline cubic-structure.
摘要翻译：公开了一种吸氢合金电极，其包括能够可逆地吸收和解吸氢的吸氢合金，该电极的特征在于吸氢合金形成由至少这三相组成的多相结构，主合金相，Ti2Ni体系立方结构的合金相和Ti-Ni系单斜晶系的合金相，主合金相具有TiMo基结晶立方结构。

14. 发明授权

US08451390B2 Projection stereoscopic display 失效
标题翻译：投影立体显示
公开(公告)号：US08451390B2
公开(公告)日：2013-05-28
申请号：US12646489
申请日：2009-12-23
申请人： Akio Furukawa , Yoshiro Takiguchi
发明人： Akio Furukawa , Yoshiro Takiguchi
IPC分类号： G02F1/1335
CPC分类号： G02B27/26 , G02F1/133528
摘要： A projection stereoscopic display includes: a stereoscopic display optical system receiving linearly polarized light from the light source and displaying a first picture and a second picture both having binocular parallax by linearly polarized light with polarization directions orthogonal to each other, in which the stereoscopic display optical system includes: a reflective liquid crystal panel modulating and reflecting linearly polarized light from the light source in response to a picture signal, a first polarizing device splitting the first picture from reflected light from the reflective liquid crystal panel, a retardation device converting the polarization direction of the first picture into a direction orthogonal thereto, and a second polarizing device splitting the second picture from reflected light from the reflective liquid crystal panel, and superimposing the second picture on the first picture of which the polarization direction is converted by the retardation device.
摘要翻译：投影立体显示器包括：立体显示光学系统，其从所述光源接收线偏振光，并且通过具有彼此正交的偏振方向的线偏振光显示第一图像和第二图像，所述第一图像和第二图像具有双眼视差，其中立体显示光学系统包括：响应于图像信号调制和反射来自光源的线偏振光的反射型液晶面板，将来自反射型液晶面板的反射光分离第一图像的第一偏振装置，将偏振方向以及第二偏振装置，将来自反射型液晶面板的反射光分割第二图像，并将第二图像叠加在通过延迟装置转换偏振方向的第一图像上。

15. 发明授权

US07489717B2 Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
标题翻译：表面发射半导体激光器及其制造方法以及光学器件
公开(公告)号：US07489717B2
公开(公告)日：2009-02-10
申请号：US10977197
申请日：2004-10-28
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器（VCSEL），以及包括具有该表面发射半导体激光器的光源装置的光学装置。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

16. 发明申请

US20070202622A1 METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER 有权
标题翻译：用于制造表面发射半导体激光的方法
公开(公告)号：US20070202622A1
公开(公告)日：2007-08-30
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

17. 发明授权

US06684013B2 Optical waveguide device to be optically poled, method of manufacturing optical waveguide device to be optically poled, and method of optically poling optical waveguide device 失效
标题翻译：光学波导装置，光学波导装置的制造方法以及光波导装置的光学方法
公开(公告)号：US06684013B2
公开(公告)日：2004-01-27
申请号：US09862479
申请日：2001-05-23
申请人： Yuko Seki , Yutaka Urino , Akio Furukawa , Tadahiko Hanada , Naoki Ofusa , Shigeru Yoneda
发明人： Yuko Seki , Yutaka Urino , Akio Furukawa , Tadahiko Hanada , Naoki Ofusa , Shigeru Yoneda
IPC分类号： G02B626
CPC分类号： G02F1/3136 , G02B6/102 , G02B6/13 , G02B2006/12142 , G02F1/0126
摘要： A waveguide optical switch has a waveguide whose refractive index changes can be controlled by an electro-optic effect and an UV guide waveguide for coupling an ultraviolet radiation to the waveguide. A portion of the waveguide and a portion of the UV guide waveguide make up a directional coupler.
摘要翻译：波导光开关具有其折射率变化可以通过电光效应控制的波导和用于将紫外线辐射耦合到波导的UV导引波导。波导的一部分和UV导引波导的一部分构成定向耦合器。

18. 发明授权

US08228960B2 Laser device, laser display device, and laser irradiation device 失效
标题翻译：激光装置，激光显示装置和激光照射装置
公开(公告)号：US08228960B2
公开(公告)日：2012-07-24
申请号：US12379903
申请日：2009-03-04
申请人： Akio Furukawa , Kaoru Kimura
发明人： Akio Furukawa , Kaoru Kimura
IPC分类号： H01S3/10
CPC分类号： H01S5/4062 , G02F1/37 , H01S5/0078 , H01S5/0092
摘要： The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection structure, and generating a plurality of fundamental waves which has at least a pair of wavelengths different from each other, and a nonlinear optical element having a periodic polarization inversion structure, and generating harmonics corresponding to the plurality of fundamental waves, respectively.
摘要翻译：本发明提供具有高波长转换效率和宽波长宽度的激光装置，并且适合作为显示光源。激光装置包括：基波生成部，具有具有多个发光点和布拉格反射结构的激光二极管，并且生成具有彼此不同的至少一对波长的多个基波;以及非线性光学元件，具有周期性极化反转结构，并且分别产生对应于多个基波的谐波。

19. 发明申请

US20090257462A1 Laser device, laser display device, and laser irradiation device 失效
标题翻译：激光装置，激光显示装置和激光照射装置
公开(公告)号：US20090257462A1
公开(公告)日：2009-10-15
申请号：US12379903
申请日：2009-03-04
申请人： Akio Furukawa , Kaoru Kimura
发明人： Akio Furukawa , Kaoru Kimura
IPC分类号： H01S3/10
CPC分类号： H01S5/4062 , G02F1/37 , H01S5/0078 , H01S5/0092
摘要： The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection structure, and generating a plurality of fundamental waves which has at least a pair of wavelengths different from each other, and a nonlinear optical element having a periodic polarization inversion structure, and generating harmonics corresponding to the plurality of fundamental waves, respectively.
摘要翻译：本发明提供具有高波长转换效率和宽波长宽度的激光装置，并且适合作为显示光源。激光装置包括：基波发生部，具有激光二极管，具有多个发光点和布拉格反射结构，并且产生具有至少一对波长不同的多个基波;以及非线性光学元件，具有周期性极化反转结构，并且分别产生对应于多个基波的谐波。

20. 发明授权

US07259943B2 Magnetic head having a current-perpendicular-to-the-plane structure and using a magneto-resistive effect 失效
标题翻译：具有电流垂直于平面结构并使用磁阻效应的磁头
公开(公告)号：US07259943B2
公开(公告)日：2007-08-21
申请号：US10826127
申请日：2004-04-16
申请人： Akio Furukawa , Yoshihiko Kakihara
发明人： Akio Furukawa , Yoshihiko Kakihara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： A magnetic head using magnetoresistive effect comprising a magnetic sensing portion formed of a magnetoresistive effect element. The magnetic sensing portion includes a lamination layer structure portion which includes at least a free layer, a fixed layer made of a ferromagnetic material, an antiferromagnetic layer and a spacer layer interposed between the free layer and the fixed layer are laminated with each other. The lamination layer structure portion includes a magnetic flux introducing layer. The lamination layer structure portion has at its lamination layer direction opposing side surfaces formed of one flat surface or continuous one curved surface over at least the free layer, the spacer layer and the fixed layer. A hard magnetic layer for maintaining a magnetic stability of the free layer is disposed in direct contact with the opposing surfaces or through an insulating layer.
摘要翻译：一种使用磁阻效应的磁头，包括由磁阻效应元件形成的磁感测部分。磁感应部分包括层压层结构部分，其至少包括自由层，由铁磁材料制成的固定层，反铁磁层和插入在自由层和固定层之间的间隔层彼此层叠。层叠层结构部分包括磁通量引入层。层压层结构部分在其层叠层方向上具有相对于至少自由层，间隔层和固定层上的一个平坦表面或连续的一个曲面形成的侧表面。用于保持自由层的磁稳定性的硬磁性层被设置成与相对表面直接接触或通过绝缘层。

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