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    • 18. 发明授权
    • Method of fabricating a field-effect transistor
    • US11545569B2
    • 2023-01-03
    • US17038316
    • 2020-09-30
    • X-FAB SEMICONDUCTOR FOUNDRIES GMBH
    • Manoj Chandrika ReghunathanPeter Hofmann
    • H01L21/225H01L29/78H01L29/66H01L21/8238H01L29/08H01L29/06
    • A method of fabricating a laterally diffused metal oxide semiconductor transistor including providing a substrate, forming a first well of a first doping polarity type in the substrate, forming a gate on a portion of the first well, the gate including an oxide layer and an at least partially conductive layer on the oxide layer, and forming a mask on at least a portion of the gate and at least a portion of the first well, wherein the mask has a sloping edge. The method further includes forming a second well of a second doping polarity type at least partially in the first well by implanting ions in the first well, the second well extending under a portion of the gate, the second doping polarity type being of opposite type to the first doping polarity type. The method includes forming a first one of a source and drain of the first doping polarity type in or on the second well, thereby defining a channel of the transistor under the gate. The method further includes forming a second one of the source and drain of the first doping polarity type in or on the first well, wherein the implanting includes directing at least a first beam of ions towards the first well at an angle substantially perpendicular to a surface plane of the substrate, and directing at least a second beam of ions towards the first well at an angle substantially offset from a surface normal of the substrate.