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11. 发明申请

US20170117444A1 Light-Emitting Device and Method for Producing a Light-Emitting Device 审中-公开
公开(公告)号：US20170117444A1
公开(公告)日：2017-04-27
申请号：US15302029
申请日：2015-03-18
申请人： OSRAM Opto Semiconductors GmbH
发明人： Ion Stoll , Norwin von Malm
IPC分类号： H01L33/50 , H01L51/52
CPC分类号： H01L33/504 , C09K11/02 , C09K11/06 , H01L27/322 , H01L33/501 , H01L33/502 , H01L51/5268 , H01L51/5281 , H01L51/56 , H01L2251/303 , H01L2251/5369 , H01L2933/0033 , H01L2933/0041 , H01L2933/0091
摘要： A light-emitting device includes a light-emitting semiconductor component that emits first light in a first wavelength range during operation A wavelength conversion element converts the first light at least partly into second light in a second wavelength range is arranged in the beam path of the first light. The second wavelength range differs from the first wavelength range. The wavelength conversion element includes nanoparticles containing organic luminescent molecules in a basic material formed from an SiO2-based material. A method for producing a light-emitting device is furthermore specified.

12. 发明申请

US20170018695A1 METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE 审中-公开
标题翻译：生产光电器件的方法
公开(公告)号：US20170018695A1
公开(公告)日：2017-01-19
申请号：US15120504
申请日：2015-02-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried HERRMANN , Norwin VON MALM
IPC分类号： H01L33/62 , H01L25/075 , H01L25/00 , H01L33/48
CPC分类号： H01L33/62 , H01L25/075 , H01L25/50 , H01L33/0095 , H01L33/486 , H01L2224/16225 , H01L2224/97 , H01L2933/0033 , H01L2933/0066
摘要： A method for manufacturing an opto-electronic component (100) is given, comprising a provision of a carrier (1) with at least one mounting surface (11), a generation of at least two vias (4) in the carrier (1) with electrically conducting contacts (12, 13) running through the vias (4), a provision of at least one light-emitting semiconductor chip (2), wherein the semiconductor chip (2) comprises a growth substrate (10) and a layer sequence (7) epitaxially grown thereon, a mounting of the at least one semiconductor chip (2) onto the at least one mounting surface (11) of the carrier (1), wherein the semiconductor chip (2) is connected in an electrically conducting manner to the contacts (12, 13) in the same method step during the mounting onto the mounting surface (11), an isolation of the carrier (1) along isolation lines (V), wherein an isolation line (V) runs through at least one of the vias (4), so that, after the isolation, the contacts (12, 13) form contact surfaces (5) at at least one side surface (1a) of the carrier (1), wherein the side surface (1a) is perpendicular to the mounting surface (11) of the carrier (1), and a mounting of the carrier (1) with the contact surfaces (5) on a connection plate (8), wherein the mounting surface (11) is perpendicular to the connection plate (8).
摘要翻译：给出了一种用于制造光电子部件（100）的方法，包括提供具有至少一个安装表面（11）的载体（1），在载体（1）中产生至少两个通孔（4）具有穿过所述通孔（4）的导电触头（12,13），提供至少一个发光半导体芯片（2），其中所述半导体芯片（2）包括生长衬底（10）和层序列（7），将所述至少一个半导体芯片（2）安装在所述载体（1）的所述至少一个安装表面（11）上，其中所述半导体芯片（2）以导电方式连接在安装到安装表面（11）上的同一方法步骤中将触点（12,13）分离到触点（12,13）上，沿着隔离线（V）隔离载体（1），其中隔离线（V）至少穿过一个通孔（4），使得在隔离之后，触点（12,13）至少形成接触表面（5）所述载体（1）的一个侧表面（1a），其中所述侧表面（1a）垂直于所述载体（1）的安装表面（11），并且所述载体（1）与所述接触表面 5）在连接板（8）上，其中安装表面（11）垂直于连接板（8）。

13. 发明申请

US20170005223A1 Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip 审中-公开
标题翻译：制造光电半导体芯片和光电半导体芯片的方法
公开(公告)号：US20170005223A1
公开(公告)日：2017-01-05
申请号：US15115242
申请日：2015-02-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： Werner Bergbauer , Thomas Lehnhardt , Jürgen Off , Joachim Hertkorn
IPC分类号： H01L31/18 , H01L31/0304 , H01L33/00 , H01L33/32
CPC分类号： H01L31/1852 , H01L21/0243 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L31/03044 , H01L31/1856 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/12 , H01L33/22 , H01L33/32 , H01L2933/0033
摘要： A method for producing an electronic semiconductor chip and a semiconductor chip are disclosed. In embodiments, the method includes providing a growth substrate having a growth surface formed by a flat region having a plurality of three-dimensional surface structures on the flat region, directly applying a nucleation layer of oxygen-containing AlN over a large area to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the flat region.
摘要翻译：公开了一种用于制造电子半导体芯片和半导体芯片的方法。在实施方案中，该方法包括提供具有由在平坦区域上具有多个三维表面结构的平坦区域形成的生长表面的生长衬底，直接在大面积上施加含氧AlN的成核层至生长在成核层上生长氮化物基半导体层序列，其中生长半导体层序列包括从平坦区域向上选择性地生长半导体层序列。

14. 发明授权

US12100691B2 Light-emitting component and display device comprising the same 有权
公开(公告)号：US12100691B2
公开(公告)日：2024-09-24
申请号：US17438776
申请日：2020-05-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： Siegfried Herrmann
IPC分类号： H01L25/075 , H01L25/16 , H01L33/52 , H01L33/60 , H01L33/62
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L33/60 , H01L33/62
摘要： The invention relates to a light-emitting component comprising a light-emitting semiconductor chip, a transparent conductive layer, and at least two electrical connection points, wherein the transparent conductive layer covers the light-emitting semiconductor chip at least in places, and the electrical connection points are arranged on a side of the light-emitting semiconductor chip facing away from the transparent conductive layer.

15. 发明授权

US12095015B2 Optoelectronic light emitting device and manufacturing method 有权
公开(公告)号：US12095015B2
公开(公告)日：2024-09-17
申请号：US17414861
申请日：2019-12-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： Thomas Schwarz , Andreas Dobner , Frank Singer , Stefan Groetsch
IPC分类号： H01L33/60 , H01L25/075 , H01L33/00 , H01L33/50
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/005 , H01L33/50 , H01L2933/0058 , H01L2933/0091
摘要： An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

16. 发明授权

US12094928B2 Method for structuring a semiconductor surface and semiconductor body comprising a semiconductor surface having at least one structure 有权
公开(公告)号：US12094928B2
公开(公告)日：2024-09-17
申请号：US17439695
申请日：2020-03-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： Markus Tautz , Matthew John Davies , Martin Welzel
IPC分类号： H01L29/06 , H01L21/306 , H01L29/20 , H01L29/66
CPC分类号： H01L29/0657 , H01L21/30608 , H01L29/2003 , H01L29/66462 , H01L29/66469
摘要： In an embodiment a method for structuring a semiconductor surface includes providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer, irradiating the semiconductor surface with an electron beam in order to produce an irradiated section and anisotropic wet-chemical etching of the semiconductor surface, wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.

17. 发明授权

US12065602B2 Phosphor compositions with orange and amber light emission 有权
公开(公告)号：US12065602B2
公开(公告)日：2024-08-20
申请号：US17555605
申请日：2021-12-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： Hiroaki Miyagawa
IPC分类号： C09K11/77 , H01L33/26 , H01L33/50
CPC分类号： C09K11/77744 , C09K11/7774 , H01L33/26 , H01L33/502
摘要： A phosphor, wherein the phosphor has a formula:

VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-yMny)2IV(Al1-2y/3,Si2y/3)3O12,

wherein

0

18. 发明公开

US20240271039A1 YELLOW LUMINOPHORE AND LIGHT SOURCE 审中-公开
公开(公告)号：US20240271039A1
公开(公告)日：2024-08-15
申请号：US18422050
申请日：2024-01-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： Daniel BICHLER , Simon DALLMEIR , Christian KOCH , Simon PESCHKE , Gudrun PLUNDRICH , Philipp SCHMID , Christiane STOLL , Johanna STRUBE-KNYRIM , Jutta THOMA , Mark VORSTHOVE
IPC分类号： C09K11/77 , F21S41/16 , F21S41/176 , F21V9/30 , F21V14/08 , F21Y115/30 , G02B26/00 , G03B21/20
CPC分类号： C09K11/7734 , C09K11/7706 , F21S41/16 , F21S41/176 , F21V9/30 , F21V14/08 , G02B26/008 , F21Y2115/30 , G03B21/204
摘要： A luminophore having the general empirical formula X′1-xA′y(Al1+zA′3-z)O4:E′ that crystallizes in a tetragonal crystal system. X′ may be Mg, Ca, Sr, Ba, and combinations thereof; A′ may be Li, Na, K, Rb, Cs, and combinations thereof; E′ may be Eu, Ce, Yb, Mn, and combinations thereof; 0

19. 发明授权

US12057522B2 Component with reduced absorption and method for producing a component 有权
公开(公告)号：US12057522B2
公开(公告)日：2024-08-06
申请号：US17632892
申请日：2020-07-23
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Tansen Varghese , Petrus Sundgren
IPC分类号： H01L33/08 , H01L33/00 , H01L33/62
CPC分类号： H01L33/08 , H01L33/005 , H01L33/62 , H01L2933/0066
摘要： Disclosed is method for making a component and a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.

20. 发明授权

US12046696B2 Optoelectronic semiconductor component and method for producing the same 有权
公开(公告)号：US12046696B2
公开(公告)日：2024-07-23
申请号：US17415003
申请日：2019-12-18
申请人： OSRAM Opto Semiconductors GmbH
发明人： Martin Behringer , Alexander Tonkikh , Tansen Varghese
IPC分类号： H01L33/00 , H01L33/06 , H01L33/24 , B82Y20/00 , B82Y40/00 , H01L25/075
CPC分类号： H01L33/06 , H01L33/0093 , H01L33/0095 , H01L33/24 , B82Y20/00 , B82Y40/00 , H01L25/0753
摘要： An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

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