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11. 发明授权

US12140879B2 Measurement method, measurement apparatus, and mark 有权
公开(公告)号：US12140879B2
公开(公告)日：2024-11-12
申请号：US17547046
申请日：2021-12-09
申请人： KIOXIA Corporation
发明人： Takashi Sato
IPC分类号： G03F9/00
CPC分类号： G03F9/7088 , G03F9/7069
摘要： According to one embodiment, a measurement method includes generating mark position information, determining at least one of a first arrangement pattern or a second arrangement pattern, and calculating displacement between a first member and a second member. The mark position information is generated after the second member is formed on the first member, and indicates a relative positional relationship between a first alignment mark formed on the first member and including bright portions and dark portions, and a second alignment mark formed on the second member and including the bright portions and the dark portions. The first arrangement pattern indicates an arrangement pattern of bright portions and dark portions of the first alignment mark. The second arrangement pattern indicates an arrangement pattern of the bright portions and the dark portions of the second alignment mark. The first arrangement pattern is determined on the basis of captured data of a reference mark formed in a region different from the region where the first alignment mark is formed and the region where the second alignment mark is formed. The displacement is calculated on the basis of the mark position information and at least one of the first arrangement pattern or the second arrangement pattern.

12. 发明授权

US12140861B2 Pattern forming method, template manufacturing method, and photomask manufacturing method 有权
公开(公告)号：US12140861B2
公开(公告)日：2024-11-12
申请号：US17199339
申请日：2021-03-11
申请人： Kioxia Corporation
发明人： Yoshinori Kagawa
IPC分类号： G03F1/76
CPC分类号： G03F1/76
摘要： According to one embodiment, a pattern forming method includes forming a first film on an object to be processed, forming a first opening pattern and a second opening pattern in the first film, forming a second film, forming a third opening pattern and a fourth opening pattern in the second film, and processing the object to be processed. The second opening pattern is provided in a position where the second opening pattern does not overlap the first opening pattern in plan view. The third opening pattern is provided in a position where the third opening pattern partly overlaps the first opening pattern and does not overlap the second opening pattern in plan view. The fourth opening pattern is provided in a position where the fourth opening pattern does not overlap the first opening pattern, the second opening pattern, and the third opening pattern.

13. 发明公开

US20240371849A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240371849A1
公开(公告)日：2024-11-07
申请号：US18778420
申请日：2024-07-19
申请人： Kioxia Corporation
发明人： Tomoya Sanuki
IPC分类号： H01L25/18 , H01L23/00 , H01L23/48 , H01L23/528 , H01L25/00
CPC分类号： H01L25/18 , H01L23/481 , H01L23/528 , H01L24/05 , H01L24/08 , H01L24/09 , H01L25/50 , H01L2224/0557 , H01L2224/08145 , H01L2224/09181 , H01L2924/1431 , H01L2924/14511
摘要： According to one embodiment, a semiconductor device includes a first substrate and a logic circuit provided on the first substrate. The device further includes a memory cell provided above the logic circuit and a second substrate provided above the memory cell. The device further includes a bonding pad provided above the second substrate and electrically connected to the logic circuit. The device further includes a wiring that is provided above the second substrate, is electrically connected to the memory cell, and includes at least one of a data signal line, a control voltage line, and a power supply line.

14. 发明公开

US20240370366A1 COMPUTING SYSTEM AND METHOD FOR CONTROLLING STORAGE DEVICE 审中-公开
公开(公告)号：US20240370366A1
公开(公告)日：2024-11-07
申请号：US18778029
申请日：2024-07-19
申请人： Kioxia Corporation
发明人： Shinichi KANNO
IPC分类号： G06F12/02 , G06F3/06 , G06F11/10 , G06F12/0891
CPC分类号： G06F12/0246 , G06F3/061 , G06F3/0614 , G06F3/0631 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/10 , G06F12/0253 , G06F12/0292 , G06F12/0891 , G06F2212/7201
摘要： According to one embodiment, a computing system transmits to a storage device a write request designating a first logical address for identifying first data to be written and a length of the first data. The computing system receives from the storage device the first logical address and a first physical address indicative of both of a first block selected from blocks except a defective block by the storage device, and a first physical storage location in the first block to which the first data is written. The computing system updates a first table which manages mapping between logical addresses and physical addresses of the storage device and maps the first physical address to the first logical address.

15. 发明授权

US12136451B2 Memory system and refresh method 有权
公开(公告)号：US12136451B2
公开(公告)日：2024-11-05
申请号：US17897758
申请日：2022-08-29
申请人： Kioxia Corporation
发明人： Rei Kasedo
IPC分类号： G11C11/40 , G11C11/406 , G11C11/4096
CPC分类号： G11C11/40618 , G11C11/40615 , G11C11/4096
摘要： A memory system includes a non-volatile memory provided with a plurality of physical blocks, and a controller configured to execute a refresh for the plurality of blocks of the non-volatile memory to rewrite data of a first plurality of blocks to a second plurality of blocks provided in the plurality of blocks. In a first time period from a previous writing to each block provided in the first plurality of blocks to completion of the refresh for each block, the controller is capable of dynamically controlling a time at which the refresh for each block is started.

16. 发明授权

US12133472B2 Magnetic storage device 有权
公开(公告)号：US12133472B2
公开(公告)日：2024-10-29
申请号：US17463522
申请日：2021-08-31
申请人： KIOXIA CORPORATION
发明人： Katsuhiko Koui , Masaru Toko , Soichi Oikawa , Hideyuki Sugiyama
IPC分类号： H10N50/80 , H01F10/32 , H10B61/00 , H10N50/10 , H10N50/85
CPC分类号： H10N50/80 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H10B61/00 , H10N50/10 , H10N50/85
摘要： A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.

17. 发明授权

US12131637B2 Moving object and driving support system for moving object 有权
公开(公告)号：US12131637B2
公开(公告)日：2024-10-29
申请号：US17705766
申请日：2022-03-28
申请人： KIOXIA CORPORATION
发明人： Marie Takada , Masanobu Shirakawa
IPC分类号： G08G1/0967 , G06T7/70 , G06V20/58 , G08G1/01 , G08G1/04 , G08G1/137
CPC分类号： G08G1/0967 , G06T7/70 , G06V20/58 , G08G1/0112 , G08G1/0141 , G08G1/04 , G08G1/096716 , G08G1/096741 , G08G1/096775 , G08G1/137 , G06T2207/30261
摘要： A driving support system includes a first monitoring device on a first object, the first monitoring device having a first controller, a first camera, and a first display, a second monitoring device on a second object, the second monitoring device having a second controller and a second camera, and a server in communication with the first and second monitoring devices. The first and second controllers each detect a target in images acquired from the respective first or second camera, calculate target information for the target, and transmit the target information to the server. The server generates list information including the target information the first and second monitoring devices, and transmits the list information to the first and second monitoring devices. The first controller further generates a map according to the list information received from the server, and displays the map on the first display.

18. 发明公开

US20240355743A1 SEMICONDUCTOR STORAGE DEVICE 审中-公开
公开(公告)号：US20240355743A1
公开(公告)日：2024-10-24
申请号：US18760442
申请日：2024-07-01
申请人： Kioxia Corporation
发明人： Yasuhito YOSHIMIZU
IPC分类号： H01L23/535 , H01L21/768 , H01L23/00 , H01L23/522 , H01L25/065 , H01L25/18 , H10B43/27
CPC分类号： H01L23/535 , H01L21/76805 , H01L21/76895 , H01L23/5226 , H01L24/08 , H01L25/0657 , H01L25/18 , H10B43/27 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
摘要： A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.

19. 发明授权

US12125878B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US12125878B2
公开(公告)日：2024-10-22
申请号：US17350492
申请日：2021-06-17
申请人： Kioxia Corporation
发明人： Tomonari Shioda , Yasunori Oshima , Taichi Iwasaki , Shota Yamagiwa , Hiroto Saito
IPC分类号： H01L29/08 , H01L27/12 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/78 , H01L29/167 , H01L29/45
CPC分类号： H01L29/0847 , H01L27/1207 , H01L29/401 , H01L29/41766 , H01L29/66636 , H01L29/7848 , H01L29/167 , H01L29/456
摘要： A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.

20. 发明授权

US12125542B2 Semiconductor memory device 有权
公开(公告)号：US12125542B2
公开(公告)日：2024-10-22
申请号：US17695529
申请日：2022-03-15
申请人： KIOXIA CORPORATION
发明人： Wataru Moriyama , Hayato Konno , Takao Nakajima , Fumihiro Kono , Masaki Fujiu , Kiyoaki Iwasa , Tadashi Someya
IPC分类号： G11C16/04 , G11C16/16 , H01L23/528 , H01L23/535 , H10B41/27 , H10B43/27
CPC分类号： G11C16/16 , G11C16/0483 , H01L23/528 , H01L23/535 , H10B41/27 , H10B43/27
摘要： A semiconductor memory device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The first select gate line and the third select gate line are farther from the substrate than the plurality of word lines. The second select gate line and the fourth select gate line are closer to the substrate than the plurality of word lines. The first semiconductor layer is opposed to the plurality of word lines, the first select gate line, and the second select gate line. The second semiconductor layer is opposed to the plurality of word lines, the third select gate line, and the fourth select gate line. The word line contact electrode is connected to one of the plurality of word lines.

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