会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 11. 发明授权
    • System and method for estimating input power for a power processing circuit
    • 用于估计功率处理电路的输入功率的系统和方法
    • US07906941B2
    • 2011-03-15
    • US11955642
    • 2007-12-13
    • Chandrasekaran JayaramanPrashant Gugle
    • Chandrasekaran JayaramanPrashant Gugle
    • G05F1/613G05F1/70
    • H02M1/4225G01R21/133H02M3/156Y02B70/126
    • A controller for a power processing circuit and a related method of operating the same. In one embodiment, the controller includes a multiplier configured to produce a product of an input current and an input voltage of the power processing circuit. The controller also includes a low-pass filter configured to produce an input power estimate of an input power to the power processing circuit as a function of the product of the input current and the input voltage. In another embodiment, the controller is a power-factor controller and includes a voltage loop compensator configured to produce a voltage compensation signal as a function of an output voltage of the power processing circuit. The controller also includes an input power estimator configured to produce an input power estimate of an input power to the power processing circuit as a function of the voltage compensation signal.
    • 一种用于功率处理电路的控制器及其操作方法。 在一个实施例中,控制器包括被配置为产生功率处理电路的输入电流和输入电压的乘积的乘法器。 控制器还包括低通滤波器,其被配置为根据输入电流和输入电压的乘积产生对功率处理电路的输入功率的输入功率估计。 在另一实施例中,控制器是功率因数控制器,并且包括电压环路补偿器,其被配置为产生作为功率处理电路的输出电压的函数的电压补偿信号。 该控制器还包括输入功率估计器,被配置为根据电压补偿信号产生对功率处理电路的输入功率的输入功率估计。
    • 13. 发明授权
    • Semiconductor device including a lateral field-effect transistor and Schottky diode
    • 包括横向场效应晶体管和肖特基二极管的半导体器件
    • US07655963B2
    • 2010-02-02
    • US11866270
    • 2007-10-02
    • Mariam Gergi SadakaBerinder P. S. BrarWonill HaChanh Ngoc Minh Nguyen
    • Mariam Gergi SadakaBerinder P. S. BrarWonill HaChanh Ngoc Minh Nguyen
    • H01L31/0328
    • H01L29/7783H01L27/0605H01L27/0629H01L27/0727H01L29/66462H01L29/872
    • A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.
    • 包括横向场效应晶体管和肖特基二极管的半导体器件及其形成方法。 在一个实施例中,横向场效应晶体管包括缓冲层,该缓冲层具有覆盖其底表面的大部分的接触,缓冲层上方的横向通道,横向通道上方的另一接触件以及将侧向通道 到缓冲层。 半导体器件还包括并联耦合到横向场效应晶体管的肖特基二极管,该晶体管包括由介于缓冲层和横向沟道之间的另一个缓冲层形成的阴极,插入另一个缓冲层和另一个触点之间的肖特基互连, 以及形成在所述肖特基互连件的表面上的阳极,其可操作以将所述阳极连接到所述另一个触点。 半导体器件还可以包括插入在缓冲层和横向沟道之间的隔离层。
    • 14. 发明授权
    • Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same
    • 具有基板驱动场效应晶体管和肖特基二极管的半导体器件及其形成方法
    • US07642568B2
    • 2010-01-05
    • US11876581
    • 2007-10-22
    • Berinder P. S. BrarWonill Ha
    • Berinder P. S. BrarWonill Ha
    • H01L31/0328
    • H01L29/7783H01L27/0605H01L27/0629H01L27/0727H01L29/66462H01L29/872
    • A semiconductor device including a substrate-driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate-driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate-driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate-driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
    • 一种包括具有横向沟道和平行耦合肖特基二极管的衬底驱动场效应晶体管的半导体器件及其形成方法。 在一个实施例中,半导体器件的衬底驱动场效应晶体管包括具有覆盖其底表面的大部分的第一触点和导电衬底上方的横向沟道的导电衬底。 衬底驱动场效应晶体管还包括位于横向沟道上方的第二接触件和将横向通道连接到导电衬底的互连件,可操作以在第一接触件和横向通道之间提供低电阻耦合。 半导体器件还包括并联耦合到衬底驱动场效应晶体管的肖特基二极管。 肖特基二极管的第一和第二端子分别耦合到衬底驱动场效应晶体管的第一和第二触点。
    • 16. 发明授权
    • Vertical field-effect transistor and method of forming the same
    • 垂直场效应晶体管及其形成方法
    • US07541640B2
    • 2009-06-02
    • US11765324
    • 2007-06-19
    • Berinder P. S. BrarWonill Ha
    • Berinder P. S. BrarWonill Ha
    • H01L29/732
    • H01L29/66856H01L29/47H01L29/8122H01L29/872
    • A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.
    • 半导体器件,其形成方法以及包括半导体器件的功率转换器。 在一个实施例中,半导体器件包括重掺杂衬底,重掺杂衬底下面的源极/漏极接触以及重掺杂衬底之上的沟道层。 半导体器件还包括在沟道层上方的重掺杂源极/漏极层以及重掺杂源极/漏极层上方的另一个源极/漏极接触。 该半导体器件还包括通过另一个源/漏接触,重掺杂源/漏层和沟道层的部分的柱区域,以在其间形成垂直单元。 半导体器件的非导电区域位于柱状区域内的沟道层的部分。 半导体器件还包括在柱状区域中的非导电区域之上的栅极。 半导体器件还可以包括包括沟道层和肖特基接触的肖特基二极管。