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181. 发明申请

US20120193694A1 WIRELESS CHIP AND ELECTRONIC APPLIANCE HAVING THE SAME 有权
标题翻译：无线芯片和具有相同功能的电子设备
公开(公告)号：US20120193694A1
公开(公告)日：2012-08-02
申请号：US13445262
申请日：2012-04-12
申请人： Yukie SUZUKI , Yasuyuki ARAI , Shunpei YAMAZAKI
发明人： Yukie SUZUKI , Yasuyuki ARAI , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L27/1214 , H01L21/84 , H01L23/49855 , H01L27/1255 , H01L27/13 , H01L29/78621 , H01L29/78675 , H01L2223/6677 , H01L2924/0002 , H01Q1/22 , H01Q1/2283 , H01Q9/0407 , H01Q9/27 , H01L2924/00
摘要： The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.
摘要翻译：本发明提供一种机械强度高的无线芯片。此外，本发明还提供一种能够防止电波被阻挡的无线芯片。在本发明的无线芯片中，通过各向异性导电粘合剂将具有形成在绝缘基板上的薄膜晶体管的层固定到天线，并且薄膜晶体管连接到天线。天线具有电介质层，第一导电层和第二导电层; 第一导电层和第二导电层之间具有介电层; 第一导电层用作辐射电极; 第二电极用作接地体。

182. 发明申请

US20120187410A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120187410A1
公开(公告)日：2012-07-26
申请号：US13354584
申请日：2012-01-20
申请人： Shunpei YAMAZAKI , Hiromichi GODO
发明人： Shunpei YAMAZAKI , Hiromichi GODO
IPC分类号： H01L29/78
CPC分类号： H01L27/108 , G11C11/403 , H01L27/0688 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L29/1037 , H01L29/22 , H01L29/4236 , H01L29/78 , H01L29/7827 , H01L29/7833 , H01L29/7869
摘要： A conventional DRAM needs to be refreshed at an interval of several tens of milliseconds to hold data, which results in large power consumption. In addition, a transistor therein is frequently turned on and off; thus, deterioration of the transistor is also a problem. These problems become significant as the memory capacity increases and transistor miniaturization advances. A transistor is provided which includes an oxide semiconductor and has a trench structure including a trench for a gate electrode and a trench for element isolation. Even when the distance between a source electrode and a drain electrode is decreased, the occurrence of a short-channel effect can be suppressed by setting the depth of the trench for the gate electrode as appropriate.
摘要翻译：需要以几十毫秒的间隔刷新常规DRAM以保存数据，这导致大的功耗。此外，其中的晶体管经常被打开和关闭; 因此，晶体管的劣化也是一个问题。随着存储容量的增加和晶体管小型化的发展，这些问题变得越来越重要。提供了一种晶体管，其包括氧化物半导体并且具有包括用于栅电极的沟槽和用于元件隔离的沟槽的沟槽结构。即使当源电极和漏电极之间的距离减小时，通过适当地设置栅电极的沟槽的深度，可以抑制短沟道效应的发生。

183. 发明申请

US20120161123A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120161123A1
公开(公告)日：2012-06-28
申请号：US13330778
申请日：2011-12-20
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02472 , H01L21/02488 , H01L21/02502 , H01L27/127 , H01L29/247 , H01L29/66742 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. Hydrogen or a rare gas is added to the second oxide semiconductor regions.
摘要翻译：提供一种小型半导体器件，其包括使用氧化物半导体膜形成沟道形成区域并且由于短沟道效应引起的电特性的变化的晶体管。另外，提供了导通状态电流改善的半导体装置。半导体器件设置有氧化物半导体膜，该氧化物半导体膜包括一对非晶区域的第二氧化物半导体区域和位于一对第二氧化物半导体区域之间的第一氧化物半导体区域，栅极绝缘膜和设置在该第二氧化物半导体区域上的栅电极第一氧化物半导体区域，其间具有栅极绝缘膜。向第二氧化物半导体区域添加氢或稀有气体。

184. 发明申请

US20120161121A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120161121A1
公开(公告)日：2012-06-28
申请号：US13330749
申请日：2011-12-20
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/12 , H01L29/78 , H01L21/336
CPC分类号： H01L29/78693 , H01L21/02565 , H01L21/477 , H01L27/1225 , H01L29/045 , H01L29/0847 , H01L29/24 , H01L29/4908 , H01L29/517 , H01L29/66742 , H01L29/66969 , H01L29/78621 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.
摘要翻译：提供了不太可能引起由于小型化导致的电特性波动的半导体器件。半导体器件包括氧化物半导体膜，其包括第一区域，与第一区域的侧表面接触的一对第二区域和与该对第二区域的侧表面接触的一对第三区域; 设置在所述氧化物半导体膜上的栅极绝缘膜; 以及在所述栅极绝缘膜上方并与所述第一区域重叠的第一电极。第一区域是CAAC氧化物半导体区域。一对第二区域和一对第三区域分别是含有掺杂剂的非晶氧化物半导体区域。一对第三区域的掺杂剂浓度高于该对第二区域的掺杂剂浓度。

185. 发明申请

US20120154456A1 DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：显示装置，显示装置的驱动方法和电子设备
公开(公告)号：US20120154456A1
公开(公告)日：2012-06-21
申请号：US13368604
申请日：2012-02-08
申请人： Hajime KIMURA , Hideaki SHISHIDO , Shunpei YAMAZAKI
发明人： Hajime KIMURA , Hideaki SHISHIDO , Shunpei YAMAZAKI
IPC分类号： G09G5/00 , G09G5/10
CPC分类号： H01L27/1225 , G09G3/2022 , G09G3/2074 , G09G3/288 , G09G3/3233 , G09G2300/0443 , G09G2300/0452 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0262 , G09G2320/0261 , G09G2320/0266 , G09G2330/021
摘要： A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided.
摘要翻译：一种在衬底上包括多个像素的半导体器件以及包括在衬底上的电子墨水的显示介质，其中多个像素中的至少一个像素包括第一和第二子像素，每个子像素包括包含氧化物半导体包括铟，并且其中通过多个信号显示多个像素中的至少一个的一个图像。

186. 发明申请

US20120153364A1 OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物材料和半导体器件
公开(公告)号：US20120153364A1
公开(公告)日：2012-06-21
申请号：US13325700
申请日：2011-12-14
申请人： Shunpei YAMAZAKI , Motoki NAKASHIMA , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Motoki NAKASHIMA , Tatsuya HONDA
IPC分类号： H01L29/78 , H01B1/00 , C01B13/00
CPC分类号： H01L29/7869 , C01G19/006 , C01P2002/72 , H01L29/04 , H01L29/045 , H01L29/26 , H01L29/78696
摘要： An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
摘要翻译：目的是提供适用于晶体管，二极管等中所包含的半导体的材料。另一个目的是提供一种包括晶体管的半导体器件，其中与氧化物半导体膜接触的氧化物半导体膜和栅极绝缘膜之间的界面处的电子态的条件是有利的。此外，另一个目的是通过给氧化半导体膜用于沟道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。使用包括具有c轴对准的晶体的氧化物材料形成半导体器件，当从表面或界面的方向观察时，半导体器件具有三角形或六边形的原子排列，并围绕c轴旋转。

187. 发明申请

US20120139017A1 WIRELESS CHIP 有权
标题翻译：无线芯片
公开(公告)号：US20120139017A1
公开(公告)日：2012-06-07
申请号：US13371675
申请日：2012-02-13
申请人： Shunpei YAMAZAKI , Konami IZUMI
发明人： Shunpei YAMAZAKI , Konami IZUMI
IPC分类号： H01L29/78 , H01L23/532
CPC分类号： G06K19/07775 , G06K19/04 , G06K19/07749 , H01L27/1214 , H01L27/1266 , H01Q1/38
摘要： The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface.
摘要翻译：本发明提供了一种能够确保消费者安全的无线芯片，同时体积小，通信性好，价格低廉，本发明还提供了一种应用。此外，本发明提供一种无线芯片，其可以在用于管理制造，流通和零售之后被再循环。无线芯片包括包括半导体元件的层和天线。天线包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的电介质层，并且具有球形，卵形，像石头的椭圆形，椭圆形球形，如橄榄球，或圆盘状，或具有其外缘部分具有弯曲表面的圆柱形或多棱柱形状。

188. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

189. 发明申请

US20120132919A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120132919A1
公开(公告)日：2012-05-31
申请号：US13366933
申请日：2012-02-06
申请人： Masayuki SAKAKURA , Shunpei YAMAZAKI
发明人： Masayuki SAKAKURA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/78645 , H01L27/12 , H01L27/124 , H01L27/283 , H01L29/42384 , H01L29/78696
摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
摘要翻译：本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

190. 发明申请

US20120113058A1 INFORMATION DEVICE 有权
标题翻译：信息设备
公开(公告)号：US20120113058A1
公开(公告)日：2012-05-10
申请号：US13348707
申请日：2012-01-12
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G06F3/042
CPC分类号： G06F3/0421 , G06F3/03545 , H01L27/14609 , H01L27/14643 , H01L27/14678 , H01L27/288 , H01L27/307 , H01L27/3227 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04N1/00347 , H04N1/00392 , H04N1/024 , H04N1/02445 , H04N1/02472 , H04N1/02805 , H04N2201/0081 , H04N2201/0089
摘要： Problems exist in areas such as image visibility, endurance of the device, precision, miniaturization, and electric power consumption in an information device having a conventional resistive film method or optical method pen input function. Both EL elements and photoelectric conversion elements are arranged in each pixel of a display device in an information device of the present invention having a pen input function. Information input is performed by the input of light to the photoelectric conversion elements in accordance with a pen that reflects light by a pen tip. An information device with a pen input function, capable of displaying a clear image without loss of brightness in the displayed image, having superior endurance, capable of being miniaturized, and having good precision can thus be obtained.
摘要翻译：在具有传统的电阻膜方法或光学方法笔输入功能的信息装置中存在诸如图像可视性，装置的耐久性，精度，小型化和电力消耗等方面的问题。 EL元件和光电转换元件都布置在具有笔输入功能的本发明的信息装置中的显示装置的每个像素中。通过根据用笔尖反射光的笔将光输入到光电转换元件来执行信息输入。因此，可以获得具有笔输入功能的信息装置，能够在显示图像中显示清晰的图像而不损失亮度，具有优异的耐久性，能够小型化并且具有良好的精度。

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