专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

181. 发明授权

US08329384B2 Resist-modifying composition and pattern forming process 有权
标题翻译：抗蚀剂改性组合物和图案形成工艺
公开(公告)号：US08329384B2
公开(公告)日：2012-12-11
申请号：US12785930
申请日：2010-05-24
申请人： Takeru Watanabe , Kazuhiro Katayama , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
发明人： Takeru Watanabe , Kazuhiro Katayama , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273
摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.
摘要翻译：图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环和醇类溶剂。

182. 发明申请

US20120288796A1 RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20120288796A1
公开(公告)日：2012-11-15
申请号：US13469929
申请日：2012-05-11
申请人： Kazuhiro KATAYAMA , Jun Hatakeyama , Youichi Ohsawa , Koji Hasegawa , Tomohiro Kobayashi
发明人： Kazuhiro KATAYAMA , Jun Hatakeyama , Youichi Ohsawa , Koji Hasegawa , Tomohiro Kobayashi
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal.
摘要翻译：提供了一种抗蚀剂组合物，其包含聚合物，其包含具有被酸不稳定基团取代的羟基的重复单元，能够产生磺酸的鎓盐PAG，酰亚胺酸或甲基化酸，以及能够产生羧酸的鎓盐PAG 。组合物的抗蚀剂膜在有机溶剂显影期间的溶解对比度得到改善，并且可以通过正/负反转形成具有最小化的纳米边缘粗糙度的孔图案。

183. 发明申请

US20120276485A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20120276485A1
公开(公告)日：2012-11-01
申请号：US13456705
申请日：2012-04-26
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Takeshi Nagata
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Takeshi Nagata
IPC分类号： G03F7/20
CPC分类号： G03F7/0397
摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.
摘要翻译：通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负型图案。包含氢化ROMP聚合物和（甲基）丙烯酸酯树脂的抗蚀剂组合物在有机溶剂显影中表现出高的溶解对比度，并且即使当酸不稳定基团通过曝光和PEB脱保护时也显示出高的耐干蚀刻性。

184. 发明授权

US08216774B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08216774B2
公开(公告)日：2012-07-10
申请号：US12705206
申请日：2010-02-12
申请人： Jun Hatakeyama
发明人： Jun Hatakeyama
IPC分类号： G03F7/004 , G03F7/09 , G03F7/40
CPC分类号： G03F1/32 , G03F1/36
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask including a lattice-like first shifter and a second shifter arrayed on the first shifter and consisting of lines which are thicker than the line width of the first shifter, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
摘要翻译：通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案移位掩模，包括格子状的第一移位器和排列在第一移位器上的第二移位器，并且由比第一移位器PEB的线宽厚的线组成，以形成正图案，照亮或加热正图案到消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，并将阳性图案溶解在碱性湿蚀刻剂中以通过正/负反转形成图案。

185. 发明申请

US20120141938A1 BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：基本化合物，化学稳定组合物和方法
公开(公告)号：US20120141938A1
公开(公告)日：2012-06-07
申请号：US13311192
申请日：2011-12-05
申请人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe
发明人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe
IPC分类号： G03F7/20 , C07C317/48 , G03F7/025 , C07D209/34 , G03F7/027 , C07C229/46 , C07C229/40
CPC分类号： C07D239/28 , G03F7/0045
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.
摘要翻译：包含基础聚合物，酸产生剂和具有酸不稳定基团取代的羧基的β-丙氨酸，γ-氨基丁酸或5-氨基戊酸衍生物形式的胺猝灭剂的化学放大抗蚀剂组合物具有高暴露前后的碱溶解速度对比度，形成高分辨率，最小粗糙度和宽焦距的良好轮廓图案。

186. 发明授权

US08192921B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08192921B2
公开(公告)日：2012-06-05
申请号：US12686836
申请日：2010-01-13
申请人： Jun Hatakeyama , Takao Yoshihara , Kazuhiro Katayama
发明人： Jun Hatakeyama , Takao Yoshihara , Kazuhiro Katayama
IPC分类号： G03F7/00 , G03F7/16 , G03F7/20 , G03F7/40
CPC分类号： G03F7/0397 , G03F1/26 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
摘要翻译：通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案具有晶格状移位器阵列PEB，显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，和将阳性图案溶解在碱性湿蚀刻剂中，以通过正/负反转形成图案。

187. 发明申请

US20110129777A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学稳定组合物和图案化方法
公开(公告)号：US20110129777A1
公开(公告)日：2011-06-02
申请号：US12957785
申请日：2010-12-01
申请人： Jun Hatakeyama , Takeru Watanabe
发明人： Jun Hatakeyama , Takeru Watanabe
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound of thiomorpholine dioxide structure has many advantages including a high contrast of alkaline dissolution rate before and after exposure, a good pattern profile after exposure, minimized roughness, and a wide focus margin. The resist composition which may be positive or negative is useful for the fabrication of VLSI and photomasks.
摘要翻译：包含基础聚合物，酸产生剂和硫代吗啉二氧化物结构的碱性化合物的化学放大抗蚀剂组合物具有许多优点，包括暴露前后碱性溶解速率的高对比度，曝光后的良好图案轮廓，最小化的粗糙度和宽焦距可以为正或负的抗蚀剂组合物可用于制造VLSI和光掩模。

188. 发明申请

US20110091812A1 PATTERNING PROCESS AND RESIST COMPOSITION 有权
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20110091812A1
公开(公告)日：2011-04-21
申请号：US12905426
申请日：2010-10-15
申请人： Jun Hatakeyama , Masaki Ohashi , Youichi Ohsawa , Kazuhiro Katayama
发明人： Jun Hatakeyama , Masaki Ohashi , Youichi Ohsawa , Kazuhiro Katayama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/095
摘要： The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.
摘要翻译：该方法通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，烘烤，曝光，曝光后烘烤和显影来形成图案。抗蚀剂组合物包含聚合物，其包含具有酸不稳定基团并且基本上不溶于碱性显影剂的重复单元，PAG，能够产生氨基的PBG，用于中和PAG酸失活的猝灭剂和有机溶剂。来自猝灭剂和PBG的氨基的总量大于来自PAG的酸的量。未曝光区域和过度曝光区域不溶解在显影剂中，而只有中间曝光剂量区域溶解在显影剂中。通过单次曝光和开发将单线分成两组，分辨率翻了一番。

189. 发明授权

US07879530B2 Antireflective coating composition, antireflective coating, and patterning process 有权
标题翻译：抗反射涂料组合物，抗反射涂层和图案化工艺
公开(公告)号：US07879530B2
公开(公告)日：2011-02-01
申请号：US12239641
申请日：2008-09-26
申请人： Seiichiro Tachibana , Kazumi Noda , Jun Hatakeyama , Takeshi Kinsho
发明人： Seiichiro Tachibana , Kazumi Noda , Jun Hatakeyama , Takeshi Kinsho
IPC分类号： G03F7/40 , G03F7/11 , G03F7/039
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译：一种组合物，其包含（A）具有在α-和α'-位取代的具有多个氟原子并具有k = 0.01-0.4的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。

190. 发明申请

US20100159404A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20100159404A1
公开(公告)日：2010-06-24
申请号：US12633423
申请日：2009-12-08
申请人： Jun Hatakeyama , Kazuhiro Katayama
发明人： Jun Hatakeyama , Kazuhiro Katayama
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of 200-320 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过200-320nm波长的高能辐射的照射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式