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171. 发明申请

US20100187550A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20100187550A1
公开(公告)日：2010-07-29
申请号：US12437170
申请日：2009-05-07
申请人： MEREDITH L. REED , MICHAEL WRABACK , PAUL SHEN
发明人： MEREDITH L. REED , MICHAEL WRABACK , PAUL SHEN
IPC分类号： H01L33/00
CPC分类号： H01L33/18 , H01L33/32
摘要： In a preferred embodiment, a light emitting device comprising: a polar template; a p-type layer grown on the polar template; the p-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface. In another preferred embodiment, a light emitting device comprising: a polar template; a n-type layer grown on the template; the n-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an p-type layer grown on the n-type layer; the p-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface.
摘要翻译：在优选实施例中，发光器件包括：极性模板; 在极性模板上生长的p型层; 所述p型层具有第一极化矢量; 所述第一偏振矢量相对于生长方向具有第一投影; 在p型层上生长的n型层; 所述n型层具有第二极化矢量; 所述第二偏振矢量相对于所述生长方向具有比所述p型层的所述第一偏振矢量的所述第一投影大的第二投影; n型层和p型层形成界面; 由此n层中的p层和第二极化矢量中的第一极化矢量在界面处产生不连续，导致在界面处出现负电荷。在另一优选实施例中，一种发光器件，包括：极性模板; 在模板上生长的n型层; 所述n型层具有第一极化矢量; 所述第一偏振矢量相对于生长方向具有第一投影; 在n型层上生长的p型层; 所述p型层具有第二极化矢量; 所述第二偏振矢量相对于所述生长方向具有比所述p型层的所述第一偏振矢量的所述第一投影大的第二投影; n型层和p型层形成界面; 由此n层中的p层和第二极化矢量中的第一极化矢量在界面处产生不连续，导致在界面处出现负电荷。

172. 发明申请

US20100187498A1 NANOWIRE LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20100187498A1
公开(公告)日：2010-07-29
申请号：US12750195
申请日：2010-03-30
申请人： Won Ha Moon , Dong Woohn Kim , Jong Pa Hong
发明人： Won Ha Moon , Dong Woohn Kim , Jong Pa Hong
IPC分类号： H01L33/32
CPC分类号： H05B33/145 , B82Y20/00 , B82Y30/00 , H01L33/18 , Y10S977/764 , Y10S977/816 , Y10S977/90 , Y10S977/95
摘要： The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

173. 发明申请

US20100176418A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：US20100176418A1
公开(公告)日：2010-07-15
申请号：US12065172
申请日：2007-11-08
申请人： Noritaka Muraki , Naoki Fukunaga
发明人： Noritaka Muraki , Naoki Fukunaga
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/18 , H01L33/32
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.
摘要翻译：本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧）层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。

174. 发明申请

US20100163887A1 LIGHT EMITTING DEVICE HAVING A PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND A METHOD OF FABRICATING THE SAME 有权
标题翻译：具有多个非极性发光电池的发光装置及其制造方法
公开(公告)号：US20100163887A1
公开(公告)日：2010-07-01
申请号：US12623990
申请日：2009-11-23
申请人： Kwang Choong KIM , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong KIM , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

175. 发明申请

US20100155767A1 Light emitting device using a micro-rod and method of manufacturing a light emitting device 审中-公开
标题翻译：使用微型棒的发光装置及制造发光装置的方法
公开(公告)号：US20100155767A1
公开(公告)日：2010-06-24
申请号：US12461415
申请日：2009-08-11
申请人： Moon-sang Lee , Sung-soo Park
发明人： Moon-sang Lee , Sung-soo Park
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01L33/18 , H01L33/44
摘要： A light emitting device using a micro-rod and a method of manufacturing a light emitting device are provided, the method includes forming a material layer on a substrate. The material layer is patterned such that a hole is formed that exposes a surface of the substrate. A core is grown in the shape of a micro-rod on the surface of the substrate exposed through the hole. A light emitting layer is deposited on the core. A shell is grown on the light emitting layer.
摘要翻译：提供了使用微型杆的发光装置和制造发光器件的方法，该方法包括在衬底上形成材料层。图案化材料层，使得形成露出基板表面的孔。芯通过孔露出的衬底的表面上生长成微杆的形状。发光层沉积在芯上。在发光层上生长壳。

176. 发明申请

US20100151661A1 NANOSTRUCTURES FORMED OF BRANCHED NANOWHISKERS AND METHODS OF PRODUCING THE SAME 有权
标题翻译：分离纳米颗粒形成的纳米微粒及其生产方法
公开(公告)号：US20100151661A1
公开(公告)日：2010-06-17
申请号：US12704754
申请日：2010-02-12
申请人： Lars Ivar Samuelson , Knut Wilfried Deppert
发明人： Lars Ivar Samuelson , Knut Wilfried Deppert
IPC分类号： H01L21/20
CPC分类号： C30B29/62 , B01J21/185 , B01J37/0238 , B82Y20/00 , B82Y30/00 , C30B11/12 , C30B29/40 , C30B29/44 , C30B29/605 , H01L21/02392 , H01L21/02433 , H01L21/02543 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L31/035236 , H01L31/03529 , H01L31/101 , H01L33/18 , H01L33/20 , H01L33/24 , Y02E10/50 , Y10S438/96 , Y10S438/962 , Y10S977/754 , Y10S977/89 , Y10S977/891 , Y10S977/921 , Y10T428/25
摘要： A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material. A neural network may be formed by positioning the first nanowhiskers close together so that adjacent trees contact one another through nanowhiskers grown in a subsequent stage, and heterojunctions within the nanowhiskers create tunnel barriers to current flow.
摘要翻译：形成具有树形形状的纳米结构的方法包括第一阶段和第二阶段。第一阶段包括在衬底表面上提供一种或多种催化剂颗粒，以及通过每种催化剂颗粒生长第一纳米晶须。第二阶段包括在每个第一纳米晶须的外围提供一个或多个第二催化剂颗粒，并且从每个第二催化颗粒生长从相应的第一纳米晶须的周边横向延伸的第二纳米晶须。可以包括进一步的阶段以生长从前一级的纳米晶须延伸出的一个或多个另外的纳米晶须。可能在纳米晶须内形成异质结构。这样的纳米结构可以形成太阳能电池阵列或发光平板的组件，其中纳米晶须由感光材料形成。可以通过将第一纳米晶须紧靠在一起而使得相邻的树木通过在后续阶段中生长的纳米晶须彼此接触而形成神经网络，并且纳米晶须内的异质结形成对当前流动的隧道势垒。

177. 发明申请

US20100148212A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE 有权
标题翻译：生产III族氮化物半导体晶体，III族氮化物半导体衬底和半导体发光器件的方法
公开(公告)号：US20100148212A1
公开(公告)日：2010-06-17
申请号：US12600352
申请日：2008-05-16
申请人： Kenji Fujito , Kazumasa Kiyomi
发明人： Kenji Fujito , Kazumasa Kiyomi
IPC分类号： H01L33/32 , H01L21/20 , H01L29/20
CPC分类号： H01L33/18 , C30B25/20 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02645 , H01L29/045 , H01L29/2003 , H01L31/1848 , H01L33/00 , H01L33/16 , H01L33/32
摘要： The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.
摘要翻译：制备本发明的III族氮化物半导体晶体的方法包括制备具有非极性平面的晶种，然后在气相中从非极性平面生长III族氮化物半导体的步骤，其中生长步骤包括生长III族氮化物半导体以在晶种的+ C轴方向上延伸。可以通过该方法获得具有高质量和大面积非极性平面的III-V族氮化物半导体晶体。

178. 发明申请

US20100148149A1 ELEVATED LED AND METHOD OF PRODUCING SUCH 有权
标题翻译：高亮LED及其生产方法
公开(公告)号：US20100148149A1
公开(公告)日：2010-06-17
申请号：US12520125
申请日：2007-12-22
申请人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
发明人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/18 , H01L33/20 , Y10S977/762
摘要： The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
摘要翻译：本发明涉及包含至少一个纳米线的发光二极管。根据本发明的LED是具有从衬底突出的纳米线的直立纳米结构。与纳米线相比，直径大于该纳米线的灯泡与衬底相关联地布置在升高的位置。通过灯泡和纳米线的组合形成pn结，得到有源区域以产生光。

179. 发明申请

US20100133509A1 SEMICONDUCTOR NANOWIRE AND ITS MANUFACTURING METHOD 有权
标题翻译：半导体纳米及其制造方法
公开(公告)号：US20100133509A1
公开(公告)日：2010-06-03
申请号：US12451898
申请日：2008-06-04
申请人： Takahiro Kawashima , Tohru Saitoh
发明人： Takahiro Kawashima , Tohru Saitoh
IPC分类号： H01L29/775 , H01L21/04
CPC分类号： H01L21/02653 , B82Y10/00 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/40 , C30B29/60 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/02656 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L33/18 , Y10S438/962
摘要： A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.
摘要翻译：提供一种制造具有第一和第二区域的半导体纳米线的方法。将催化剂颗粒放在基材上。引入第一源气体，从而通过气 - 液 - 固相生长从催化剂颗粒生长第一区域。在第一区域的侧壁上形成保护涂层，并且引入第二源气体以通过液相 - 固相生长从第一区域延伸出第二区域。

180. 发明授权

US07714351B2 Nanowire light emitting device and method of manufacturing the same 有权
标题翻译：纳米线发光装置及其制造方法
公开(公告)号：US07714351B2
公开(公告)日：2010-05-11
申请号：US11509756
申请日：2006-08-25
申请人： Won Ha Moon , Dong Woohn Kim , Jong Pa Hong
发明人： Won Ha Moon , Dong Woohn Kim , Jong Pa Hong
IPC分类号： H01L33/00
CPC分类号： H05B33/145 , B82Y20/00 , B82Y30/00 , H01L33/18 , Y10S977/764 , Y10S977/816 , Y10S977/90 , Y10S977/95
摘要： The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.
摘要翻译：本发明提供一种纳米线发光器件及其制造方法。在发光器件中，形成第一和第二导电型覆盖层，并且其间插入有源层。第一和第二导电型覆盖层和有源层中的至少一个是通过制备由半导体纳米线和有机粘合剂构成的混合物层并从其中除去有机粘合剂而获得的半导体纳米线层。

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