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171. 发明授权

US5302226A Apparatus for microwave processing in a magnetic field 失效
标题翻译：磁场微波处理装置
公开(公告)号：US5302226A
公开(公告)日：1994-04-12
申请号：US892710
申请日：1992-05-29
申请人： Shunpei Yamazaki , Naoki Hirose , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
发明人： Shunpei Yamazaki , Naoki Hirose , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32449 , H01J37/32192 , H01J37/3244
摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
摘要翻译：微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。

172. 发明授权

US5203959A Microwave plasma etching and deposition method employing first and second magnetic fields 失效
标题翻译：采用第一和第二磁场的微波等离子体蚀刻和沉积方法
公开(公告)号：US5203959A
公开(公告)日：1993-04-20
申请号：US766283
申请日：1991-09-27
申请人： Naoki Hirose , Takashi Inujima , Toru Takayama
发明人： Naoki Hirose , Takashi Inujima , Toru Takayama
IPC分类号： C23C16/511 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32623 , H01J37/32678
摘要： A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.
摘要翻译：等离子体处理装置和方法配备有真空室，赫尔兹兹线圈，Ioffe棒，微波发生器和气体供给系统。进一步提供辅助磁体以加强真空室中的磁场，以产生围绕真空室的中心位置限制等离子体气体的离心漂移力。具体地，该方法包括在真空室中建立基本上平行于在室中发射的微波的传播方向的第一磁场，并建立基本上垂直于第一磁场的第二磁场。放置用于等离子体处理的室中的衬底，使得衬底的表面基本上垂直于第一磁场的方向并且平行于第二磁场的方向。

173. 发明授权

US5017828A Image sensor 失效
标题翻译：图像传感器
公开(公告)号：US5017828A
公开(公告)日：1991-05-21
申请号：US342857
申请日：1989-04-25
申请人： Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Toru Takayama
发明人： Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Toru Takayama
IPC分类号： H01L21/205 , H01L27/146 , H01L31/0248 , H01L31/10 , H01L31/105 , H04N5/335 , H04N5/369
CPC分类号： H01L31/1055 , H01L27/14643
摘要： An improved image sensor made of photosensitive semiconductor materials with a number of pixels each including an n-type semiconductor layer, a p-type semiconductor layer and an intrinsic semiconductor layer disposed between the n-type and p-type layers. The n-type and p-type layers are made from a semiconductor material having a high resistivity. The high resistivity of the n-type layer and the p-type layer functions to prevent crosstalk currents from passing between the pixels.
摘要翻译：一种由具有多个像素的光敏半导体材料制成的改进的图像传感器，每个像素均包括n型半导体层，p型半导体层和设置在n型层和p型层之间的本征半导体层。 n型和p型层由具有高电阻率的半导体材料制成。 n型层和p型层的高电阻率起到防止串扰电流在像素之间通过的作用。

174. 发明授权

US09362307B2 Thin film transistor, electronic device having the same, and method for manufacturing the same 有权
标题翻译：薄膜晶体管，具有该薄膜晶体管的电子器件及其制造方法
公开(公告)号：US09362307B2
公开(公告)日：2016-06-07
申请号：US13185931
申请日：2011-07-19
申请人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
发明人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
IPC分类号： H01L29/786 , H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L27/1248
摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
摘要翻译：本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题由于玻璃的膨胀或收缩造成图案化。本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

175. 发明授权

US09219159B2 Method for forming oxide semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：氧化物半导体膜的形成方法及半导体装置的制造方法
公开(公告)号：US09219159B2
公开(公告)日：2015-12-22
申请号：US13422241
申请日：2012-03-16
申请人： Yuki Imoto , Tetsunori Maruyama , Toru Takayama
发明人： Yuki Imoto , Tetsunori Maruyama , Toru Takayama
IPC分类号： H01L21/42 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969
摘要： A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.
摘要翻译：提供了形成具有良好的半导体特性的氧化物半导体膜的方法。此外，提供了利用氧化物半导体膜制造具有良好电特性的半导体器件的方法。一种形成氧化物半导体膜的方法，包括以下步骤：形成氧化物半导体膜，在氧化物半导体膜上形成氢可渗透膜并与其接触，在氢可渗透膜上形成氢捕获膜并与氢可渗透膜接触通过进行热处理来自氧化物半导体膜的氢。此外，在半导体器件的制造方法中，使用形成氧化物半导体膜的方法。

176. 发明授权

US09178182B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09178182B2
公开(公告)日：2015-11-03
申请号：US13248302
申请日：2011-09-29
申请人： Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L31/0203 , H01L51/56 , H01L27/12 , H01L27/32 , H01L51/52
CPC分类号： H01L51/5246 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/3244 , H01L27/3276 , H01L29/78672 , H01L51/0097 , H01L51/5237 , H01L51/5243 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2251/5323
摘要： To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
摘要翻译：实现使用塑料膜的高性能液晶显示装置或发光元件。 CPU形成在第一玻璃基板上，然后与第一基板分离。具有发光元件的像素部分形成在第二玻璃基板上，然后与第二基板分离。两者相互结合。因此，可以实现高集成度。此外，在这种情况下，包括CPU的分离层也用作发光元件的密封层。

177. 发明授权

US08866143B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08866143B2
公开(公告)日：2014-10-21
申请号：US13411842
申请日：2012-03-05
申请人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
IPC分类号： H01L33/08 , H01L29/423 , H01L27/12 , G02F1/1368 , G02F1/1345 , H01L29/49 , G02F1/1362 , H01L29/66 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78684
摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
摘要翻译：本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

178. 发明授权

US08482011B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08482011B2
公开(公告)日：2013-07-09
申请号：US13559963
申请日：2012-07-27
申请人： Junya Maruyama , Toru Takayama , Yumiko Ohno
发明人： Junya Maruyama , Toru Takayama , Yumiko Ohno
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L51/524 , H01L51/5259 , H01L51/56
摘要： The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
摘要翻译：本发明提供了一种结构，其中像素区域13被包括间隔物（填料，微小颗粒和/或类似物）的第一密封材料（具有比第二密封材料更高的粘度）16包围，两个衬底，填充有几滴透明的第二密封材料17a，其在该区域中扩散; 并通过使用第一密封材料16和第二密封材料17密封。

179. 发明授权

US08415679B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08415679B2
公开(公告)日：2013-04-09
申请号：US13461249
申请日：2012-05-01
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L27/14
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

180. 发明授权

US08415208B2 Semiconductor device and peeling off method and method of manufacturing semiconductor device 有权
公开(公告)号：US08415208B2
公开(公告)日：2013-04-09
申请号：US10193912
申请日：2002-07-15
申请人： Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/76 , H01L21/30
CPC分类号： H01L27/1266 , G02F1/1339 , G02F1/1341 , G02F1/1362 , G02F2001/13613 , H01L21/2007 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1248 , H01L27/3262 , H01L29/24 , H01L29/7869 , H01L33/44 , H01L2227/326 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

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