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161. 发明授权

US06673515B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06673515B2
公开(公告)日：2004-01-06
申请号：US09951523
申请日：2001-09-14
申请人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
发明人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7038
CPC分类号： G03F7/039 , C08G61/08 , G03F7/0045
摘要： The invention provides a polymer comprising recurring units of formula (1—1) or (1-2) wherein k is 0 or 1, m is 0, 1, 2, 3 or 4, and n is 1 or 2 and having a weight average molecular weight of 1,000 to 500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：本发明提供了包含式（1-1）或（1-2）的重复单元的聚合物，其中k为0或1，m为0,1,2,3或4，n为1或2，并且具有重量平均分子量为1,000〜500,000。包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

162. 发明授权

US06566038B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06566038B2
公开(公告)日：2003-05-20
申请号：US09842396
申请日：2001-04-26
申请人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
发明人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7039
CPC分类号： C08F222/06 , C08F222/40 , C08F232/08 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111 , C08F232/04 , C08F2220/1866 , C08F232/00
摘要： A polymer comprising units of formulas (1) and (2) and having a Mw of 1,000-500,000 is provided. R1 is H, CH3 or CH2CO2R3, R2 is H, CH3 or CO2R3, R3 is alkyl, R4 is halogen or acyloxy, alkoxycarbonyloxy or alkylsulfonyloxy group which may be substituted with halogen, R5 is H or alkyl, R6 is an acid labile group, Z is a single bond or a divalent hydrocarbon group, k is 0 or 1, and W is —O— or —(NR)— wherein R is H or alkyl. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV rays.
摘要翻译：提供了包含式（1）和（2）单元并且Mw为1,000-500,000的聚合物。 R 1为H，CH 3或CH 2 CO 2 R 3，R 2为H，CH 3或CO 2 R 3，R 3为烷基，R 4为卤素或酰氧基，可被卤素取代的烷氧基羰氧基或烷基磺酰氧基，R 5为H或烷基，R 6为酸不稳定基团， Z为单键或二价烃基，k为0或1，W为-O-或 - （NR） - ，其中R为H或烷基。包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

163. 发明授权

US06566037B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06566037B2
公开(公告)日：2003-05-20
申请号：US09797878
申请日：2001-03-05
申请人： Tsunehiro Nishi , Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Jun Hatakeyama
发明人： Tsunehiro Nishi , Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Jun Hatakeyama
IPC分类号： G03F7038
CPC分类号： C08F232/08 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the reminders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.
摘要翻译：提供了包含式（1）的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H，甲基或CH2CO2R3，R2是H，甲基或CO2R3，R3是烷基，R4是H，烷基，烷氧基烷基或酰基 R 5和R 15为酸不稳定基团，R 6〜R 9中的至少一个为羧基或羟基的一价烃基，提醒为H或烷基，R 10〜R 13中的至少一个为含有 -CO 2部分结构，提醒为H或烷基，R 14为多环烃基或含多环烃基的烷基，Z为三价烃基，k = 0或1，x为> 0，a，b， c和d为> = 0，满足x + a + b + c + d = 1。包含聚合物的抗蚀剂组合物具有显着提高的灵敏度，分辨率和耐蚀刻性，并且在微细加工中非常有用。

164. 发明授权

US06541179B2 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06541179B2
公开(公告)日：2003-04-01
申请号：US09811695
申请日：2001-03-20
申请人： Jun Hatakeyama , Youichi Ohsawa , Tsunehiro Nishi , Jun Watanabe
发明人： Jun Hatakeyama , Youichi Ohsawa , Tsunehiro Nishi , Jun Watanabe
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0395 , Y10S430/122
摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.
摘要翻译：抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。光致酸产生剂是式（1）的锍盐，R1是一价环状或桥连的C3-20，烃基，R2是羟基，硝基，卤素或直链，支链或环状的一价C1-15烃基，其可以含有O，N，S或卤原子，K-是非亲核反离子，x等于1或2，y是0-3的整数。抗蚀剂组合物对ArF准分子激光敏感，具有良好的灵敏度和分辨率，并形成有利于蚀刻的厚膜。

165. 发明授权

US06515150B2 Cyclic acetal compound, polymer, resist composition and patterning process 有权
公开(公告)号：US06515150B2
公开(公告)日：2003-02-04
申请号：US09967946
申请日：2001-10-02
申请人： Mutsuo Nakashima , Seiichiro Tachibana , Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Jun Hatakeyama
发明人： Mutsuo Nakashima , Seiichiro Tachibana , Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Jun Hatakeyama
IPC分类号： C07D31726
CPC分类号： C07D317/24 , C08F232/08 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： Cyclic acetal compounds of formula (1) wherein k=0 or 1 and n is an integer of 0 to 6 are novel. Using the cyclic acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

166. 发明授权

US06515149B2 Acetal compound, polymer, resist composition and patterning response 有权
公开(公告)号：US06515149B2
公开(公告)日：2003-02-04
申请号：US09922635
申请日：2001-08-07
申请人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： C07D31712
CPC分类号： C08G61/08 , C08G61/02 , Y10S430/106 , Y10S430/111
摘要： Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

167. 发明授权

US06309796B1 High molecular weight silicone compounds resist compositions, and patterning method 有权
标题翻译：高分子量硅氧烷化合物抵抗组合物和图案化方法
公开(公告)号：US06309796B1
公开(公告)日：2001-10-30
申请号：US09129950
申请日：1998-08-06
申请人： Mutsuo Nakashima , Ichiro Kaneko , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
发明人： Mutsuo Nakashima , Ichiro Kaneko , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
IPC分类号： G03F7075
CPC分类号： G03F7/0045 , C08G77/14 , C08G77/38 , C08G77/388 , C08G77/50 , G03F7/0392 , G03F7/0757
摘要： The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z′ is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R1 is —OCHR—R′ —OH or —NHCHR—R′ —OH; R2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers. A resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for microfabrication with electron beams or deep UV. Since the composition has low absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern having walls perpendicular to the substrate can be readily formed.
摘要翻译：本发明提供了包含式（1）的重复单元并且具有1,000-50,000重均分子量的高分子量硅氧烷化合物。硅烷化合物中的羧基或羧基和羟基的一部分或全部氢原子可被酸不稳定基团取代.Z为二价至六价，非芳香族，单环或多环烃基或桥环状烃基; Z'是二价至六价，正或支链烃基或非芳香族单环或多环烃或桥连环烃基; x，y和z是对应于Z和Z'的化合价的1-5的整数; R 1是-OCHR-R'-OH或-NHCHR-R'-OH; R2是烷基或链烯基或单价，非芳族，多环烃或桥连环烃基; p1，p2，p3和p4为0或正数。包含作为基础树脂的高分子量硅氧烷化合物的抗蚀剂组合物对光化辐射敏感，并且具有高灵敏度和分辨率，使得它适合于用电子束或深紫外线的微细加工。由于组成在ArF或KrF准分子激光器的曝光波长处具有低吸收，因此可以容易地形成具有垂直于衬底的壁的精细限定图案。

168. 发明授权

US5093161A Method of adhering silicone rubber to a coated metal surface 失效
标题翻译：将硅橡胶粘附到涂覆金属表面的方法
公开(公告)号：US5093161A
公开(公告)日：1992-03-03
申请号：US588059
申请日：1990-09-25
申请人： Masaharu Takahashi , Jun Hatakeyama
发明人： Masaharu Takahashi , Jun Hatakeyama
IPC分类号： C09D183/04
CPC分类号： C09D183/04
摘要： Silicone rubber is adhered to a metal surface by coating the metal surface with an organopolysiloxane adhesion improving agent of the formula: ##STR1## wherein R.sup.1 is a monovalent organic radical of from 2 to 8 carbon atoms which contains an unsaturated bond, R.sup.2 is a substituted or unsubstituted monovalent hydrocarbon radical of from 1 to 10 carbon atoms which contains no unsaturated bond, a is a number in the range of 1
摘要翻译：通过用下式的有机聚硅氧烷粘合改进剂涂覆金属表面将硅橡胶粘附到金属表面上：其中R 1是含有不饱和键的2至8个碳原子的一价有机基团，R 2 是不含不饱和键的取代或未取代的1〜10个碳原子的一价烃基，a是在1

169. 发明授权

US09207534B2 Nitrogen-containing monomer, polymer, resist composition, and patterning process 有权
标题翻译：含氮单体，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US09207534B2
公开(公告)日：2015-12-08
申请号：US13349754
申请日：2012-01-13
申请人： Masayoshi Sagehashi , Jun Hatakeyama , Takeru Watanabe , Tomohiro Kobayashi
发明人： Masayoshi Sagehashi , Jun Hatakeyama , Takeru Watanabe , Tomohiro Kobayashi
IPC分类号： G03F7/039 , G03F7/004 , G03F7/30 , G03F7/20 , C07D211/44
CPC分类号： G03F7/0397 , C07D211/44 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/2037 , G03F7/2039 , G03F7/2041 , G03F7/30
摘要： A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要翻译：具有更好性能的化学放大型正性抗蚀剂组合物可以使用其中掺入猝灭剂的聚合物，特别是包含具有氨基甲酸酯结构的重复单元的聚合物来配制，该聚合单元用酸分解以产生氨基，以及任选的具有酸不稳定性的重复单元能够在酸的作用下产生羧基和/或羟基的基团。该聚合物对于抑制酸的扩散非常有效，并且自身扩散，并且组合物以高分辨率形成矩形轮廓的图案。

170. 发明授权

US09029064B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US09029064B2
公开(公告)日：2015-05-12
申请号：US13350153
申请日：2012-01-13
申请人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe , Kazuhiro Katayama
发明人： Jun Hatakeyama , Masayoshi Sagehashi , Takeru Watanabe , Kazuhiro Katayama
IPC分类号： G03F7/004 , G03F7/20 , G03F7/32
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/094 , G03F7/11 , G03F7/20 , G03F7/2037 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
摘要翻译：通过将包含含有具有与酸不稳定基团键合的氮原子的重复单元，酸发生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，预烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。

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