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151. 发明申请

US20120315730A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120315730A1
公开(公告)日：2012-12-13
申请号：US13484670
申请日：2012-05-31
申请人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shunpei YAMAZAKI
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78603 , H01L29/78618
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。沟道形成区域位于沟道长度方向的低电阻区域之间。在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂形成包含金属元素和掺杂剂的低电阻区域。

152. 发明申请

US20120314151A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120314151A1
公开(公告)日：2012-12-13
申请号：US13592911
申请日：2012-08-23
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： H01L33/08 , G02F1/136
CPC分类号： H01L29/78696 , H01L27/124 , H01L27/127 , H01L27/3262 , H01L29/4908 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L33/0041 , H01L2029/7863
摘要： The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween
摘要翻译：本发明的目的是提供一种包括具有低布线电阻的大面积集成电路的TFT的可靠的半导体器件。本发明的特征之一是在一个TFT中设置包括与栅电极重叠的区域和不与栅电极重叠的区域的LDD区域。本发明的另一特征在于，栅电极包括第一导电层和第二导电层，并且栅极配线的一部分具有包含第一导电层和第二导电层的包层结构，其间具有低电阻层

153. 发明申请

US20120305922A1 DISPLAY DEVICE, ELECTRONIC APPARATUS, AND METHOD OF FABRICATING THE DISPLAY DEVICE 有权
标题翻译：显示装置，电子装置以及制造显示装置的方法
公开(公告)号：US20120305922A1
公开(公告)日：2012-12-06
申请号：US13559634
申请日：2012-07-27
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L51/52
CPC分类号： H01L27/3248 , H01L27/1222 , H01L27/1277 , H01L27/1288 , H01L27/153 , H01L27/322 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L29/78675 , H01L51/001 , H01L51/0011 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
摘要： It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.
摘要翻译：本发明的目的是提供一种以低成本，高产率制造具有高图像质量和高可靠性的显示装置的技术。本发明在像素区域中的像素电极层上方具有间隔物，并且覆盖覆盖像素电极层的周边的用作隔板的绝缘层。当在像素电极层上形成发光材料时，用于选择性形成的掩模由间隔物支撑，从而防止掩模由于其扭转和偏转而与像素电极层接触。因此，像素电极层中不会发生由掩模产生的裂纹等的损伤。因此，像素电极层的形状不具有缺陷，可以制造出以高可靠性进行高分辨率显示的显示装置。

154. 发明申请

US20120300151A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120300151A1
公开(公告)日：2012-11-29
申请号：US13567327
申请日：2012-08-06
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
IPC分类号： H01L27/15 , G02F1/136
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

155. 发明申请

US20120299889A1 DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE 有权
标题翻译：装置基板，发光装置和发光装置的驱动方法
公开(公告)号：US20120299889A1
公开(公告)日：2012-11-29
申请号：US13570478
申请日：2012-08-09
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
IPC分类号： G09G5/00 , H01L27/15
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

156. 发明申请

US20120299003A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US20120299003A1
公开(公告)日：2012-11-29
申请号：US13568186
申请日：2012-08-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L29/22 , H01L27/15 , H01L29/786
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

157. 发明申请

US20120286270A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120286270A1
公开(公告)日：2012-11-15
申请号：US13463092
申请日：2012-05-03
申请人： Atsuo ISOBE , Toshinari SASAKI , Junichi KOEZUKA , Shunpei YAMAZAKI
发明人： Atsuo ISOBE , Toshinari SASAKI , Junichi KOEZUKA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4238 , H01L21/02565 , H01L21/265 , H01L21/425 , H01L21/84 , H01L27/1085 , H01L27/10876 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/40 , H01L29/045 , H01L29/0847 , H01L29/66477 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78693
摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.
摘要翻译：本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。利用上述结构，可以实现小型化。此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

158. 发明申请

US20120273780A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120273780A1
公开(公告)日：2012-11-01
申请号：US13547377
申请日：2012-07-12
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Kengo AKIMOTO , Kojiro SHIRAISHI
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Kengo AKIMOTO , Kojiro SHIRAISHI
IPC分类号： H01L29/12
CPC分类号： H01L29/78618 , G02F1/133345 , G02F1/133528 , G02F1/134336 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2201/123 , G09G3/3674 , G09G2310/0286 , H01L27/1225 , H01L27/3262 , H01L29/247 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译：一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间电极层。有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。

159. 发明申请

US20120262432A1 LIGHT-EMITTING DEVICE, DISPLAY DEVICE, LIGHT-EMITTING SYSTEM, AND DISPLAY SYSTEM 有权
标题翻译：发光装置，显示装置，发光系统和显示系统
公开(公告)号：US20120262432A1
公开(公告)日：2012-10-18
申请号：US13442073
申请日：2012-04-09
申请人： Koichiro KAMATA , Yutaka SHIONOIRI , Shunpei YAMAZAKI
发明人： Koichiro KAMATA , Yutaka SHIONOIRI , Shunpei YAMAZAKI
IPC分类号： H05B37/00 , G06F3/038
CPC分类号： H05B33/0815 , H01L27/3244 , H01L2251/5361 , H05B33/0896
摘要： A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven.
摘要翻译：提供了高度可靠的发光装置。提供具有高安全性且不具有暴露电极的照明装置或显示装置。提供具有高布局灵活性的照明装置或显示装置。提供了可应用发光装置或显示装置的发光系统或显示系统。用于接收电力的电极和整流电路设置在包括有机EL元件的发光装置中并且被布置为面对用于传输电力的电极，由此向发光装置提供交流电力。将整流电路将交流电力整流为直流电力，驱动发光装置内的有机EL元件。

160. 发明申请

US20120256179A1 TRANSISTOR AND DISPLAY DEVICE 审中-公开
标题翻译：晶体管和显示器件
公开(公告)号：US20120256179A1
公开(公告)日：2012-10-11
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

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