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141. 发明授权

US09570885B2 Laser, passive optical network system, apparatus and wavelength control method 有权
标题翻译：激光，无源光网络系统，设备和波长控制方法
公开(公告)号：US09570885B2
公开(公告)日：2017-02-14
申请号：US14308335
申请日：2014-06-18
申请人： Huawei Technologies Co., Ltd.
发明人： Xiaoping Zhou
IPC分类号： H04B10/572 , H04B10/50 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/0625 , H04B10/556 , H01S5/12 , H01S5/323
CPC分类号： H01S5/06251 , H01S5/06256 , H01S5/12 , H01S5/22 , H01S5/32333 , H04B10/503 , H04B10/5563 , H04B10/572
摘要： The present invention provide a laser, where the laser is divided into a laser region and a grating adjustment region through a first electrical isolation layer; the laser region is configured to generate optical signals, where the optical signals include an optical signal with a wavelength corresponding to a “0” signal and an optical signal with a wavelength corresponding to a “1” signal; the grating adjustment region is configured to adjust a wavelength of the grating adjustment region by controlling current of the grating adjustment region, so that the optical signal with the wavelength corresponding to the “1” signal of the laser region passes through the grating adjustment region, and the optical signal with the wavelength corresponding to the “0” signal of the laser region returns to the laser region, thereby implementing suppression to chirp of a directly modulated laser.
摘要翻译：本发明提供一种激光器，其中通过第一电隔离层将激光器分成激光区域和光栅调节区域; 激光区域被配置为产生光信号，其中光信号包括具有对应于“0”信号的波长的光信号和具有对应于“1”信号的波长的光信号; 光栅调整区域通过控制光栅调整区域的电流来调整光栅调整区域的波长，使得与激光区域的“1”信号对应的波长的光信号通过光栅调整区域，并且具有对应于激光区域的“0”信号的波长的光信号返回到激光区域，从而实现对直接调制激光器的啁啾的抑制。

142. 发明申请

US20170033536A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20170033536A1
公开(公告)日：2017-02-02
申请号：US15193249
申请日：2016-06-27
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kazuue FUJITA , Akio ITO , Tadataka EDAMURA , Tatsuo DOUGAKIUCHI
IPC分类号： H01S5/20 , H01S5/24 , H01S5/343 , H01S5/34
CPC分类号： H01S5/2018 , H01S5/0604 , H01S5/1096 , H01S5/18 , H01S5/24 , H01S5/3402 , H01S5/34306 , H01S2302/02
摘要： A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a cascade structure in the form of a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2 by intersubband emission transitions of electrons, and to generate output light of a difference frequency ω by difference frequency generation from the first pump light and the second pump light. Grooves respectively formed in a direction intersecting with a resonating direction in a laser cavity structure are provided on a second surface opposite to the first surface of the substrate.
摘要翻译：量子级联激光器被配置为具有半导体衬底和设置在衬底的第一表面上的有源层，并且具有层叠结构的级联结构，该级联结构是单位层叠结构的多级叠层形式，每层包括发射层和注入层。有源层被配置为能够通过电子的子带间发射跃迁来产生频率ω1的第一泵浦光和频率ω2的第二泵浦光，并且通过来自第一泵的差频产生产生差频ω的输出光光和第二个泵灯。在与基板的第一表面相对的第二表面上设置分别在与激光腔结构中的谐振方向相交的方向上形成的槽。

143. 发明授权

US09531163B2 Semiconductor laser diode 有权
公开(公告)号：US09531163B2
公开(公告)日：2016-12-27
申请号：US14697228
申请日：2015-04-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： Bernhard Stojetz , Alfred Lell , Christoph Eichler
IPC分类号： H01S5/00 , H01S5/22 , H01S5/20 , H01S5/30 , H01S5/343 , H01S5/02 , H01S5/065
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/0213 , H01S5/0653 , H01S5/2022 , H01S5/3013 , H01S5/34313 , H01S5/34333 , H01S2301/17
摘要： A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.

144. 发明申请

US20160372892A1 Broad Area Laser Including Anti-Guiding Regions For Higher-Order Lateral Mode Suppression 有权
标题翻译：包括反导向区域的广域激光高阶横向模式抑制
公开(公告)号：US20160372892A1
公开(公告)日：2016-12-22
申请号：US15177525
申请日：2016-06-09
申请人： II-VI Laser Enterprise GmbH
发明人： Jarkko Telkkälä , Jürgen Müller , Norbert Lichtenstein
IPC分类号： H01S5/20 , H01S5/22 , H01S5/34 , H01S5/24
CPC分类号： H01S5/205 , H01S5/2022 , H01S5/2031 , H01S5/2036 , H01S5/22 , H01S5/2202 , H01S5/24 , H01S5/34 , H01S2301/18
摘要： A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.
摘要翻译：广域激光二极管被配置为包括位于设备的有源区域外部的反引导层。抗引导层由高折射率材料形成，其用于将不需要的高阶横向模式（归因于热透镜问题）与来自激光二极管的输出信号的低阶模式输出光束分离。反引导层使用在用于生长形成激光二极管本身的外延层的步骤之前或之后的单个外延生长步骤形成，从而产生提供抑制不想要的高阶模式而不需要修改的结构用于制造激光二极管本身的具体工艺步骤。

145. 发明授权

US09472741B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US09472741B2
公开(公告)日：2016-10-18
申请号：US14027985
申请日：2013-09-16
申请人： PANASONIC CORPORATION
发明人： Hiroshi Ohno
IPC分类号： H01L33/62 , H01S5/042 , B82Y20/00 , H01S5/22 , H01S5/16 , H01L33/00 , H01L33/38 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/343
CPC分类号： H01L33/62 , B82Y20/00 , H01L33/0045 , H01L33/38 , H01L2924/0002 , H01S5/0202 , H01S5/0425 , H01S5/16 , H01S5/2031 , H01S5/22 , H01S5/3216 , H01S5/34333 , H01L2924/00
摘要： A semiconductor light-emitting device includes a substrate; a first cladding layer formed on the substrate; a first guide layer formed on the first cladding layer; an active layer formed on the first guide layer; a second guide layer formed on the active layer; a contact layer formed on the second guide layer; a cladding electrode formed on the contact layer, and made of conductive metal oxide; and a pad electrode electrically coupled to the cladding electrode. The semiconductor light-emitting device includes a mesa structure including the contact layer. The cladding electrode has a greater width than the mesa structure. The cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer.
摘要翻译：半导体发光器件包括：衬底; 形成在所述基板上的第一覆层; 形成在所述第一包层上的第一引导层; 形成在所述第一引导层上的有源层; 形成在所述有源层上的第二引导层; 形成在所述第二引导层上的接触层; 形成在接触层上的包覆电极，由导电金属氧化物制成; 以及电耦合到包层电极的焊盘电极。半导体发光器件包括包括接触层的台面结构。包层电极具有比台面结构更大的宽度。包覆电极覆盖台面结构的上表面和侧表面，并且电耦合到接触层。

146. 发明授权

US09466945B2 Surface-emitting semiconductor laser device and method for producing the same 有权
标题翻译：表面发射半导体激光器件及其制造方法
公开(公告)号：US09466945B2
公开(公告)日：2016-10-11
申请号：US14827457
申请日：2015-08-17
申请人： FUJI XEROX CO., LTD.
发明人： Naoki Jogan , Jun Sakurai , Akemi Murakami , Takashi Kondo , Kazutaka Takeda , Junichiro Hayakawa
IPC分类号： H01S5/00 , H01S5/187 , H01S5/20 , H01S5/343 , H01S5/183
CPC分类号： H01S5/187 , H01S5/183 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18319 , H01S5/18322 , H01S5/18327 , H01S5/18333 , H01S5/18358 , H01S5/2027 , H01S5/34313 , H01S5/3432
摘要： A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.
摘要翻译：表面发射半导体激光器件包括衬底和设置在衬底上的半导体层。半导体层包括第一导电类型的第一半导体多层膜，第一间隔层，有源层，第二间隔层和第二导电类型的第二半导体多层膜。第一半导体多层膜和第二半导体多层膜形成空腔。由空腔和有源层的中心形成的驻波的图案的峰位于不同的位置。

147. 发明申请

US20160284936A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：US20160284936A1
公开(公告)日：2016-09-29
申请号：US15174525
申请日：2016-06-06
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Katsuya SAMONJI , Kazuhiko YAMANAKA , Shinji YOSHIDA , Hiroyuki HAGINO
IPC分类号： H01L33/12 , H01L33/14 , H01L33/32 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/022 , H01S5/343 , H01S5/323 , H01L33/06 , H01S5/20
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/145 , H01L33/16 , H01L33/32 , H01L33/483 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01S5/0206 , H01S5/02212 , H01S5/0226 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

148. 发明授权

US09450380B2 Semiconductor laser light source 有权
标题翻译：半导体激光光源
公开(公告)号：US09450380B2
公开(公告)日：2016-09-20
申请号：US14550613
申请日：2014-11-21
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Shuhei Yamamoto , Akira Nakamura , Kazutaka Ikeda
IPC分类号： H01S5/00 , H01S5/20 , H01S5/022
CPC分类号： H01S5/20 , H01S5/0224 , H01S5/02272
摘要： A sub-mount includes a sub-mount substrate, an Au layer placed above the sub-mount substrate, a barrier layer which is placed on the Au layer and has a barrier portion at least in a portion of its outer peripheral portion which is other than a portion corresponding to a side of an output end of a semiconductor laser, and a solder layer placed on the barrier layer in an area surrounded by the barrier portion, wherein the semiconductor laser is bonded to the sub-mount through the solder layer, in a state where the semiconductor laser is spaced apart by a predetermined interval from an inner surface of the barrier portion, and further, the output end protrudes, in a direction of output of the laser light, from an end of the solder layer which corresponds to the side of the output end of the semiconductor laser.
摘要翻译：子安装座包括副安装基板，位于副安装基板上方的Au层，位于Au层上的阻挡层，至少在其外周部分的另一部分上具有阻挡部分比与半导体激光器的输出端的一侧对应的部分，以及在由阻挡部包围的区域中的阻挡层上设置的焊料层，其中半导体激光通过焊料层接合到副安装座，在半导体激光器与阻挡部分的内表面隔开预定间隔的状态下，并且输出端在激光输出方向上从相应的焊料层的端部突出到半导体激光器的输出端侧。

149. 发明授权

US09450124B1 Fabrication methodology for optoelectronic integrated circuits 有权
标题翻译：光电集成电路的制作方法
公开(公告)号：US09450124B1
公开(公告)日：2016-09-20
申请号：US14736494
申请日：2015-06-11
申请人： Opel Solar, Inc. , The University of Connecticut
发明人： Geoff W. Taylor
IPC分类号： H01L21/00 , H01L21/02 , H01L31/0352 , H01L21/8249 , H01L29/66 , H01L21/3213 , H01L31/18 , H01S5/343 , H01S5/026 , H01L27/144 , H01L29/417 , H01L31/0232 , H01S5/22 , H01S5/20 , H01L21/265 , H01L29/45
CPC分类号： H01L31/035236 , H01L21/2654 , H01L21/32133 , H01L21/32135 , H01L27/1443 , H01L29/0653 , H01L29/0843 , H01L29/1075 , H01L29/41708 , H01L29/41716 , H01L29/452 , H01L29/66363 , H01L29/66371 , H01L29/66401 , H01L29/7404 , H01L29/7783 , H01S5/06203
摘要： A method of forming an integrated circuit employs a plurality of layers supported on a substrate that include i) n-type contact layer, ii) a p-type modulation doped quantum well structure (MDQWS) above the n-type contact layer, iii) n-type MDQWS above the p-type MDQWS, and iv) p-type contact layer(s) above the n-type MDQWS. A feature for a thyristor is defined by a mesa at the p-type contact layer of iv). A first layer of metal is deposited on the feature, which is then etched for at least one other device. Additional layer(s) of metal is deposited on the feature to form cumulative metal layers, which are etched away to form a set of mesas and corresponding electrodes for the thyristor. The cumulative metal layers that cover the feature and contact the mesa at the p-type contact layer of iv) are patterned to form an anode electrode of the thyristor.
摘要翻译：形成集成电路的方法采用支撑在基板上的多个层，其包括i）n型接触层，ii）n型接触层上方的p型调制掺杂量子阱结构（MDQWS），iii） n型MDQWS在p型MDQWS之上，以及iv）p型接触层在n型MDQWS之上。晶闸管的特征由iv）的p型接触层的台面限定。第一层金属沉积在特征上，然后将其蚀刻至少一个其它器件。附加的金属层沉积在特征上以形成累积的金属层，其被蚀刻掉以形成用于晶闸管的一组台面和相应的电极。图案化覆盖该特征并接触iv）的p型接触层的台面的累积金属层，形成晶闸管的阳极电极。

150. 发明授权

US09450053B2 Photonic integrated circuits based on quantum cascade structures 有权
标题翻译：基于量子级联结构的光子集成电路
公开(公告)号：US09450053B2
公开(公告)日：2016-09-20
申请号：US13951240
申请日：2013-07-25
申请人： Massachusetts Institute of Technology , Pendar Technologies, LLC
发明人： Anish K. Goyal , Laurent Diehl , Christian Pfluegl , Christine A. Wang , Mark Francis Witinski
IPC分类号： H01L29/06 , H01L29/15 , H01S5/026 , H01S5/34 , B82Y20/00 , H01S5/227 , H01S5/20
CPC分类号： H01S5/3402 , B82Y20/00 , H01L29/15 , H01S5/026 , H01S5/2018 , H01S5/2063 , H01S5/2275 , H01S5/3013
摘要： Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.
摘要翻译：光子集成电路（PIC）基于量子级联（QC）结构。在实施例方法和相应装置中，能够产生光增益的集成多层半导体结构的波限制区域中的QC层耗尽自由电荷载流子，以在该结构的一部分中产生低损耗光波限制区域。离子注入可用于产生能量较深的陷阱水平以捕获无电荷载流子。其他实施例包括修改无源，耗尽的QC结构的区域以产生能够获得光学增益的有源区。增益或损失也可以通过部分消耗或增强自由电荷载流子密度来改变。 QC激光器和放大器可以以自对准的方式彼此整体地集成或与无源波导和其它无源器件集成。克服了材料再生长方法所涉及的高成本，复杂制造和耦合损耗的挑战。

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