专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

141. 发明授权

US5082729A Magnetic recording medium for a video tape recorder and a method for preparing the same 失效
标题翻译：用于视频带记录仪的磁记录介质及其制备方法
公开(公告)号：US5082729A
公开(公告)日：1992-01-21
申请号：US259668
申请日：1988-10-19
申请人： Tetsuji Nishida , Shinji Saito , Naoyoshi Chino
发明人： Tetsuji Nishida , Shinji Saito , Naoyoshi Chino
IPC分类号： C09D5/23 , G11B5/714 , G11B5/716
CPC分类号： G11B5/716 , G11B5/714 , Y10S428/90 , Y10T428/257 , Y10T428/265
摘要： A magnetic recording medium for a video tape recorder is disclosed, comprising a nonmagnetic support having thereon in the following order an under magnetic layer containing ferromagnetic particles of metal oxide and an upper magnetic layer containing ferromagnetic particles of metal oxide, wherein said under magnetic layer contains the ferromagnetic particles having a specific surface area by a BET method of from 26 to 50 m.sup.2 /g and a coercive force (Hc.sub.1) of from 500 to 1,000 Oe; said upper magnetic layer contains the ferromagnetic particles having a specific surface area by a BET method of from 30 to 60 m.sup.2 /g and a coercive force (Hc.sub.2) of from 600 to 1,200 Oe; the dry thickness of the upper magnetic layer is from 0.1 to 1.0 .mu.m; and the coercive force (Hc.sub.2) of the ferromagnetic particles for the upper magnetic layer is higher than the coercive force (Hc.sub.1) of the ferromagnetic particles for the under magnetic layer.
摘要翻译：公开了一种用于磁带录像机的磁记录介质，包括一非磁性载体，其上依次具有包含金属氧化物的铁磁颗粒的磁性层和含有金属氧化物的铁磁性颗粒的上磁层，其中所述下磁层包含所述铁磁性粒子的BET比表面积为26〜50m 2 / g，矫顽力（Hc1）为500〜1000Oe; 所述上磁性层含有BET法为30〜60m 2 / g，矫顽力（Hc2）为600〜1200Oe的比表面积的铁磁性粒子，上磁层的干厚度为0.1〜1.0μm; 并且用于上磁性层的铁磁颗粒的矫顽力（Hc2）高于用于下磁性层的铁磁颗粒的矫顽力（Hc1）。

142. 发明授权

US4965120A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4965120A
公开(公告)日：1990-10-23
申请号：US199821
申请日：1988-05-27
申请人： Toshio Ono , Hiroshi Ogawa , Chiaki Mizuno , Shinji Saito
发明人： Toshio Ono , Hiroshi Ogawa , Chiaki Mizuno , Shinji Saito
IPC分类号： C09D5/23 , G11B5/708 , G11B5/714 , G11B5/716
CPC分类号： G11B5/708 , G11B5/714 , G11B5/716 , Y10S428/90 , Y10T428/2495 , Y10T428/25 , Y10T428/257 , Y10T428/265 , Y10T428/30
摘要： A magnetic recording medium is described, comprising a nonmagnetic support having thereon a first magnetic layer and having on the first magnetic layer a second magnetic layer, in that order, said second magnetic layer comprising a magnetic particle, a binder, abrasive particles and carbon black having an average primary particle diameter of 80 m.mu. or more, said first magnetic layer comprising a magnetic particle, a binder and carbon black having an average primary particle diameter of 40 m.mu. or less without substantially containing abrasive particles in the first magnetic layer, and the thickness ratio of the first layer to the second layer, first layer thickness/second layer thickness is 1.8 or more.
摘要翻译：描述了一种磁记录介质，其包括其上具有第一磁性层的非磁性载体，并且在第一磁性层上具有第二磁性层，所述第二磁性层依次包括磁性颗粒，粘合剂，磨料颗粒和炭黑平均一次粒径为80μm以上，所述第一磁性层包含平均一次粒径为40μm以下的磁性粒子，粘结剂和炭黑，而在第一磁性层中基本上不含研磨粒子，以及第一层与第二层的厚度比，第一层厚度/第二层厚度为1.8以上。

143. 发明授权

US4956816A Non-volatile semiconductor memory having improved testing circuitry 失效
标题翻译：具有改进测试电路的非易失性半导体存储器
公开(公告)号：US4956816A
公开(公告)日：1990-09-11
申请号：US358482
申请日：1989-05-30
申请人： Shigeru Atsumi , Sumio Tanaka , Shinji Saito , Nobuaki Otsuka
发明人： Shigeru Atsumi , Sumio Tanaka , Shinji Saito , Nobuaki Otsuka
IPC分类号： G11C17/00 , G11C16/34 , G11C29/00 , G11C29/06 , G11C29/50
CPC分类号： G11C29/50004 , G11C16/34 , G11C29/50 , G11C29/50016 , G06F2201/81 , G11C16/04
摘要： This invention provides a non-volatile semiconductor memory having a first node and a second node, the second node having a ground potential. The invention includes a plurality of non-volatile memory cells each having a drain and a threshold potential, the cells, for storing data written into the cells at a predetermined normal writing voltage. A plurality of bit lines, each memory cell being connected to one of the bit lines, transfer data to and from the memory cells. A circuit connected to the bit lines simultaneously tests the memory cells of all the bit lines at the normal writing voltage to detect changes in the threshold potential.
摘要翻译：本发明提供一种具有第一节点和第二节点的非易失性半导体存储器，第二节点具有接地电位。本发明包括多个具有漏极和阈值电位的非易失性存储单元，用于存储以预定的正常写入电压写入单元的数据。多个位线，每个存储单元连接到一个位线，将数据传送到存储单元和从存储单元传送数据。连接到位线的电路同时以正常写入电压测试所有位线的存储单元，以检测阈值电位的变化。

144. 发明授权

US4810908A Semiconductor logic circuit comprising clock driver and clocked logic circuit 失效
标题翻译：半导体逻辑电路包括时钟驱动器和时钟逻辑电路
公开(公告)号：US4810908A
公开(公告)日：1989-03-07
申请号：US125648
申请日：1987-11-25
申请人： Hirokazu Suzuki , Akinori Tahara , Shinji Saito
发明人： Hirokazu Suzuki , Akinori Tahara , Shinji Saito
IPC分类号： H03K19/086 , H03K5/02 , H03K19/00 , H03K19/018 , H03K19/21
CPC分类号： H03K5/02 , H03K19/212
摘要： A semiconductor logic circuit comprises a clock driver circuit and a clocked circuit which carries out a clocked operation responsive to an output of the clock driver circuit, where an output logic amplitude of the clock driver circuit is set to a value which is greater than an internal logic amplitude of the clocked circuit and is less than or equal to four times the internal logic amplitude of the clocked circuit.
摘要翻译：半导体逻辑电路包括时钟驱动器电路和时钟电路，其根据时钟驱动器电路的输出执行时钟操作，其中时钟驱动器电路的输出逻辑幅度被设置为大于内部时钟电路的逻辑幅度小于或等于时钟电路的内部逻辑幅度的四倍。

145. 发明授权

US4806417A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4806417A
公开(公告)日：1989-02-21
申请号：US110291
申请日：1987-10-20
申请人： Shinji Saito , Hiroaki Araki , Kiyomi Ejiri , Hiroshi Ogawa , Chiaki Mizuno
发明人： Shinji Saito , Hiroaki Araki , Kiyomi Ejiri , Hiroshi Ogawa , Chiaki Mizuno
IPC分类号： C09D5/23 , C09D127/04 , C09D127/06 , C09D175/06 , G11B5/702 , G11B5/708 , G11B5/70
CPC分类号： G11B5/7023 , G11B5/7021 , Y10S428/90 , Y10T428/25
摘要： An improvement of a magnetic recording medium comprising a nonmagnetic support and a magnetic recording layer provided on the support which comprises a binder and a ferromagnetic powder dispersed therein is disclosed. The binder contains a resin component having a metal sulfonate group and the ferromagnetic powder contains water in an amount corresponding to moles of 20-80 times as much as the number of moles of the metal sulfonate group contained in the binder.
摘要翻译：公开了一种磁性记录介质的改进，其包括设置在载体上的非磁性载体和磁记录层，该载体包含粘合剂和分散在其中的铁磁性粉末。粘合剂含有具有金属磺酸盐基团的树脂组分，并且铁磁粉末含有相当于粘合剂中所含的金属磺酸盐基团摩尔数的20-80倍摩尔量的水。

146. 发明授权

US4802137A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4802137A
公开(公告)日：1989-01-31
申请号：US7582
申请日：1987-01-28
申请人： Taizo Okuda , Shinji Saito , Nobuo Shishikura
发明人： Taizo Okuda , Shinji Saito , Nobuo Shishikura
IPC分类号： G11C29/00 , G11C16/04 , G11C17/00 , G11C29/06 , G11C29/24 , G11C29/50 , G11C7/00
CPC分类号： G11C29/24 , G11C29/50 , G11C16/04
摘要： A semiconductor memory device includes a plurality of memory cells arranged in rows and columns, a plurality of bit lines, each coupled to the memory cells forming one column, and a MOS transistor connected between a power supply terminal and one end of every bit line. The device further includes at least one test memory cell coupled in series with the MOS transistor, thus forming a series circuit connected between the power supply terminal and the ground.
摘要翻译：半导体存储器件包括排列成行和列的多个存储器单元，多个位线，每个位线连接到形成一列的存储器单元，以及连接在电源端子和每个位线的一端之间的MOS晶体管。该装置还包括与MOS晶体管串联耦合的至少一个测试存储单元，从而形成连接在电源端子和地之间的串联电路。

147. 发明授权

US4788663A Nonvolatile semiconductor memory device with a lightly-doped drain structure 失效
标题翻译：具有轻掺杂漏极结构的非易失性半导体存储器件
公开(公告)号：US4788663A
公开(公告)日：1988-11-29
申请号：US42877
申请日：1987-04-24
申请人： Sumio Tanaka , Shinji Saito , Shigeru Atsumi , Nobuaki Ohtsuka
发明人： Sumio Tanaka , Shinji Saito , Shigeru Atsumi , Nobuaki Ohtsuka
IPC分类号： G11C16/04 , G11C11/34 , G11C7/00 , H01L29/78
CPC分类号： G11C16/0441
摘要： Each memory cell in an EPROM includes two memory cell transistors which share a common floating gate and have two separated drains, one of which is connected to a read bit line and the other of which is connected to write bit line. In this EPROM, the read memory cell transistor of the read bit line has a lower hot electron injection rate than the hot electron injection rate of the write memory cell transistor of the write bit line. A bit line voltage booster is connected to the read bit line.
摘要翻译： EPROM中的每个存储单元包括两个存储单元晶体管，共享一个公共浮动栅极并具有两个分离的漏极，其中一个连接到读取位线，另一个连接到写入位线。在该EPROM中，读取位线的读取存储单元晶体管的热电子注入速率低于写入位线的写入存储单元晶体管的热电子注入速率。位线电压升压器连接到读位线。

148. 发明授权

US4743487A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4743487A
公开(公告)日：1988-05-10
申请号：US816872
申请日：1986-01-07
申请人： Shinji Saito , Chiaki Mizuno , Hiroshi Ogawa , Noburo Hibino , Yasuo Tamai
发明人： Shinji Saito , Chiaki Mizuno , Hiroshi Ogawa , Noburo Hibino , Yasuo Tamai
IPC分类号： G11B5/708 , C09D5/23 , C09D7/12 , C09D167/00 , C09D169/00 , C09D177/00 , G11B5/70 , G11B5/73 , G11B5/704
CPC分类号： G11B5/7305 , Y10S428/90 , Y10T428/24355
摘要： A magnetic recording medium such as an audio cassette tape or a video cassette tape comprising a flexible nonmagnetic support and a magnetic recording layer which contains a ferromagnetic cobalt-containing iron oxide, in which the nonmagnetic support has a surface of a center line average height in the range of 0.01 to 0.1 .mu.m on both sides and the magnetic recording medium has a heat shrinkage ratio of not higher than 1%, the heat shrinkage ratio being determined after allowing to stand at 110.degree. C. for 4 hours.
摘要翻译：一种诸如音频盒式磁带或盒式磁带的磁记录介质，包括柔性非磁性载体和含有铁磁性钴的氧化铁的磁记录层，其中非磁性载体具有中心线平均高度的表面两侧的0.01〜0.1μm的范围和磁记录介质的热收缩率不高于1％，热收缩率是在110℃下放置4小时后测定的。

149. 发明授权

US4710421A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4710421A
公开(公告)日：1987-12-01
申请号：US29557
申请日：1987-03-24
申请人： Toshio Ono , Yasuo Tamai , Chiaki Mizuno , Hiroshi Ogawa , Shinji Saito
发明人： Toshio Ono , Yasuo Tamai , Chiaki Mizuno , Hiroshi Ogawa , Shinji Saito
IPC分类号： G11B5/70 , C09D5/23 , C09D7/12 , G11B5/73
CPC分类号： G11B5/7305 , Y10S428/90 , Y10T428/2495 , Y10T428/24975 , Y10T428/31786
摘要： A magnetic recording medium having a heat shrinkage ratio of not higher than 1% and comprising a nonmagnetic support in the form of a tape which has a heat shrinkage ratio of not higher than 1.8%, a Young's modulus of 450 to 650 kg/mm.sup.2 in the longitudinal direction and a Young's modulus of 450 to 550 kg/mm.sup.2 in the width direction, and a magnetic recording layer provided on the support which comprises a binder and a ferromagnetic powder dispersed therein and has a squareness ratio of not less than 0.89. All the heat shrinkage ratios are values determined after being allowed to stand at 110.degree. C. for 4 hours.
摘要翻译：具有不高于1％的热收缩率的磁记录介质，其包含热收缩率不高于1.8％的带状非磁性载体，杨氏模量为450至650kg / mm2，长度方向和宽度方向的杨氏模量为450〜550kg / mm2，以及设置在载体上的磁记录层，其包含粘合剂和分散在其中的铁磁性粉末，并且具有不小于0.89的矩形比。所有的热收缩率都是在110℃下放置4小时后确定的值。

150. 发明授权

US09413003B2 Electrode material for lithium secondary battery and lithium secondary battery 有权
标题翻译：锂二次电池和锂二次电池用电极材料
公开(公告)号：US09413003B2
公开(公告)日：2016-08-09
申请号：US13574996
申请日：2011-07-07
申请人： Takehiko Sawai , Shinji Saito , Kazunori Urao , Takashi Kawasaki
发明人： Takehiko Sawai , Shinji Saito , Kazunori Urao , Takashi Kawasaki
IPC分类号： H01M4/583 , H01M4/00 , H01M4/48 , H01M4/13 , H01M4/58 , H01M4/62 , H01M4/587 , H01M4/36 , H01M4/38 , H01M4/1393 , H01M4/131 , H01M4/1391 , H01M4/139 , H01M4/1395 , H01M4/133 , H01M4/134 , H01M10/052
CPC分类号： H01M4/483 , H01M4/13 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1391 , H01M4/1393 , H01M4/1395 , H01M4/36 , H01M4/366 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/48 , H01M4/5825 , H01M4/583 , H01M4/587 , H01M4/625 , H01M10/052 , Y02E60/122
摘要： The present invention provides a negative-electrode material for a lithium secondary battery which has a very low resistance, allows the lithium secondary battery to be charged and discharged (high output) at a high current and have a high capacity, and achieve a cycle life to such an extent that the lithium secondary battery can be mounted on a vehicle. The electrode material is composed of (a) at least one active substance (4) selected from among a metal oxide containing metal therein and an alloy material each of which is coated with a carbon material and has a graphene phase or an amorphous phase (8) on at least a surface thereof, (b) a graphite-based carbon material (5) having the graphene phase or the amorphous phase on at least a surface thereof; and (c) carbon material (6) other than the graphite-based carbon material and having the graphene phase or the amorphous phase on at least a surface thereof. The active substance (4), the graphite-based carbon material (5), and the carbon material (6) other than the graphite-based carbon material fuse the graphene phase or the amorphous phase (8a, 8b) thereof together and bond them to each other to form a composite active substance (7) including composed of the active substance including one active substance selected from among the metal oxide containing the metal and the alloy material.
摘要翻译：本发明提供了一种具有非常低电阻的锂二次电池用负极材料，使锂二次电池以高电流充放电（高输出）并具有高容量，并实现循环寿命达到能够将锂二次电池安装在车辆上的程度。电极材料由（a）至少一种选自含金属氧化物的活性物质（4）和各自涂覆有碳材料并具有石墨烯相或非晶相的合金材料（8 ），（b）至少在其表面上具有石墨烯相或非晶相的石墨基碳材料（5）; 和（c）除了石墨基碳材料之外的碳材料（6），并且在至少其表面上具有石墨烯相或非晶相。活性物质（4），石墨基碳材料（5）和除了石墨基碳材料之外的碳材料（6）将石墨烯相或非晶相（8a，8b）熔合在一起并将它们结合彼此形成复合活性物质（7），该复合活性物质（7）由包含选自含有金属的金属氧化物和合金材料的一种活性物质的活性物质构成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式