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141. 发明授权

US5563661A Image processing apparatus 失效
公开(公告)号：US5563661A
公开(公告)日：1996-10-08
申请号：US218574
申请日：1994-03-28
申请人： Koji Takahashi , Motokazu Kashida , Kenji Kawai
发明人： Koji Takahashi , Motokazu Kashida , Kenji Kawai
IPC分类号： G06K9/36 , H04N5/76 , H04N5/77 , H04N5/7826 , H04N5/926 , H04N5/93 , H04N9/79 , H04N9/797 , H04N9/804 , H04N9/806
CPC分类号： H04N7/0125 , H04N19/112 , H04N19/12 , H04N19/132 , H04N19/137 , H04N19/142 , H04N19/152 , H04N19/162 , H04N19/172 , H04N19/593 , H04N19/61 , H04N19/85 , H04N19/89 , H04N19/98 , H04N5/23245 , H04N5/772 , H04N5/9261 , H04N9/045 , H04N9/7925 , H04N9/8205 , H04N5/775 , H04N5/78263 , H04N5/78266 , H04N5/9305 , H04N9/7921 , H04N9/797 , H04N9/7973 , H04N9/8042 , H04N9/8047 , H04N9/8063 , Y10S358/906
摘要： An image processing apparatus includes an image pickup circuit having a plurality of photographic modes, such as television standards, a compression processing circuit for performing compression processing of an image pickup signal outputted from the image pickup circuit, the compression circuit having a plurality of compression modes, and a selecting circuit for selecting one of the compression modes of the compression processing circuit in accordance with a selected one of the photographic modes of the image pickup circuit.

142. 发明授权

US5318654A Apparatus for cleaning a substrate with metastable helium 失效
标题翻译：用亚稳态氦气清洗底物的装置
公开(公告)号：US5318654A
公开(公告)日：1994-06-07
申请号：US893832
申请日：1992-06-04
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.
摘要翻译：一种用于清洁表面的设备包括第一和第二反应容器，用于在第二反应容器中保持在其表面存在异物的待处理物质的保持装置，用于向第一反应中供应氦气的装置容器，用于通过在第一反应容器中激发氦气产生氦离子，电子和亚稳态氦的装置，以及用于分离在第一反应容器中产生的亚稳态氦并将亚稳态氦引入第二反应容器的装置。

143. 发明授权

US5198388A Method of forming interconnection patterns 失效
标题翻译：形成互连模式的方法
公开(公告)号：US5198388A
公开(公告)日：1993-03-30
申请号：US616273
申请日：1990-11-20
申请人： Kenji Kawai
发明人： Kenji Kawai
IPC分类号： H01L21/3205 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L23/52
CPC分类号： H01L21/02071 , H01L21/321 , H01L21/32136 , H01L21/32139 , Y10S438/94 , Y10S438/963
摘要： Disclosed is a method which enables a sufficient anti-corrosion processing of an interconnection pattern. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, so as to form an interconnection pattern. The interconnection pattern is irradiated with deep UV light in a vacuum of 1.times.10.sup.-4 Torr or less in degree. Even if a protection film including halogen is formed on the side wall of the interconnection pattern upon reactive ion etching, this method enables sufficient removal of the halogen in a sufficient time and a complete anti-corrosion processing of the interconnection pattern.
摘要翻译：公开了能够对互连图案进行充分的防腐蚀处理的方法。在半导体衬底上形成互连层。通过使用卤素型气体来选择性地蚀刻互连层，从而形成互连图案。在1×10 -4乇或更低的真空度内用深紫外线照射互连图案。即使在反应离子蚀刻时在互连图案的侧壁上形成包括卤素的保护膜，该方法能够在足够的时间内充分除去卤素并且对互连图案进行完全的防腐处理。

144. 发明授权

US5100504A Method of cleaning silicon surface 失效
标题翻译：清洁硅表面的方法
公开(公告)号：US5100504A
公开(公告)日：1992-03-31
申请号：US668677
申请日：1991-03-07
申请人： Kenji Kawai , Toshiaki Ogawa
发明人： Kenji Kawai , Toshiaki Ogawa
IPC分类号： C23F4/00 , H01L21/302 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02046 , H01L21/02049
摘要： In the first step, a silicon oxide film (21) on a silicon surface (22) is etched away using a CHF.sub.3 gas. After the silicon oxide film is removed, organic matter (23) of the C.sub.x F.sub.y group remains on the silicon surface. In the second step, the organic matter (23) is etched away using a NF.sub.3 gas. The silicon oxide film (21) is etched in preference to underlying silicon (22) by using the CHF.sub.3 gas. A F radical is easily formed from the NF.sub.3 gas used for removing the organic matter (23). At the time of forming this F radical, no residue is formed which makes the silicon surface (22) dirty. Consequently, a clear silicon surface (22) is obtained.
摘要翻译：在第一步骤中，使用CHF 3气体蚀刻硅表面（22）上的氧化硅膜（21）。在去除氧化硅膜之后，CxFy基团的有机物质（23）保留在硅表面上。在第二步骤中，使用NF 3气体蚀刻掉有机物（23）。优选通过使用CHF 3气体来蚀刻氧化硅膜（21），以优于下面的硅（22）。由用于除去有机物质的NF 3气体容易地形成F自由基（23）。在形成该F基团时，不形成使硅表面（22）变脏的残余物。因此，获得透明的硅表面（22）。

145. 发明授权

US4847634A Method and apparatus for correcting snaking in a rollfilm feeding apparatus 失效
标题翻译：用于校正卷膜进给装置中的蛇形化的方法和装置
公开(公告)号：US4847634A
公开(公告)日：1989-07-11
申请号：US127073
申请日：1987-12-01
申请人： Kenji Kawai , Masakzu Ohtorii , Tsutomu Ueyama , Takumi Yoshida
发明人： Kenji Kawai , Masakzu Ohtorii , Tsutomu Ueyama , Takumi Yoshida
IPC分类号： G03B1/42 , B65H23/02 , B65H23/038 , B65H23/14 , G03B27/58
CPC分类号： B65H23/02 , G03B27/588
摘要： An apparatus for correcting snaking of rollfilm comprises a driving roller for feeding the rollfilm to the exposure position with the film being maintained flat, pinch rollers provided such that they can approach or be separated from the driving roller, switching means for switching between the abutment and separation of the pinch rollers and the driving roller, and cutting means for cutting the rollfilm.
摘要翻译：用于校正卷膜卷曲的装置包括：驱动辊，用于将胶片保持平坦地将卷膜进给到曝光位置，夹送辊设置成使得它们能够与驱动辊接近或分离;切换装置，用于在基台和夹送辊和驱动辊的分离，以及用于切割卷膜的切割装置。

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