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    • 134. 发明授权
    • Rotary kilns
    • 旋转窑
    • US5607648A
    • 1997-03-04
    • US367303
    • 1995-01-20
    • Robert CarterJohn T. Semeraz
    • Robert CarterJohn T. Semeraz
    • C01G23/00B01J12/00B01J12/02B01J19/28C01G43/025C22B60/02F27B7/00F27D25/00G21C3/62B01J4/00
    • F27D25/001B01J12/02B01J19/28C01G43/025C22B60/0213F27B7/00B01J2219/00159B01J2219/182
    • A rotary kiln, particularly for producing uranium dioxide from uranium hexafluoride, has an inlet arrangement and a heated rotatable barrel. Uranium hexafluoride and steam react together in the inlet arrangement to form uranyl fluoride which is fed into the barrel by the aid of a rotating scroll feed device. In the barrel, the uranyl fluoride reacts with a counterflow stream of steam and hydrogen to produce the uranium dioxide. A porous metal or ceramic filter closely surrounds the scroll feed device to remove particles from kiln-produced gases. The filter is maintained in a clean condition by the scraping action of a number of helical blades forming part of the scroll feed device. The uranium dioxide powder produced by the kiln may be processed to form nuclear fuel pellets.
    • PCT No.PCT / GB94 / 00953 Sec。 371 1995年1月20日第 102(e)1995年1月20日PCT PCT 1994年5月4日PCT公布。 出版物WO94 / 26405 日期1994年11月24日一种特别用于从六氟化铀生产二氧化铀的回转窑具有入口装置和加热的可旋转筒。 六氟化铀和蒸汽在入口装置中一起反应以形成铀酰氟,其通过旋转的滚动进料装置进料到料筒中。 在桶中,铀氟化物与蒸汽和氢气的逆流反应产生二氧化铀。 多孔金属或陶瓷过滤器紧密地围绕涡旋进料装置以从窑产生的气体中除去颗粒。 通过形成涡卷进给装置的一部分的多个螺旋叶片的刮擦作用将过滤器保持在干净的状态。 由窑生产的二氧化铀粉末可以加工形成核燃料颗粒。
    • 139. 发明授权
    • ECR plasma source for gas abatement
    • ECR等离子体源减少气体
    • US5453125A
    • 1995-09-26
    • US331916
    • 1994-10-31
    • Ole D. Krogh
    • Ole D. Krogh
    • B01J12/00B01J19/08B01J19/12H01J37/32C23C16/00
    • B01J12/002B01J19/087B01J19/126H01J37/32192H01J37/3222H01J37/32238H01J37/32678B01J2219/0852B01J2219/0894
    • An apparatus is described as a source of a plasma with a variety of applications. Of particular interest is gas abatement whereby the toxic or environmentally harmful effluent from a process chamber is converted to harmless and stable products by passing through this plasma source. The plasma is produced in a gas by cooperation between a magnetic field of the proper strength and microwave energy of the proper frequency. The microwave field enters a chamber through a window of microwave transparent material to encounter a magnetic field formed by a permanent magnet placed on the opposite side of the chamber and designed such that the direction of propagation of the microwave field is parallel with the magnetic field lines in the center of the chamber. For the purpose of gas abatement the plasma source is located downstream from a processing chamber. The gas molecules in the effluent of the processing chamber are dissociated by electron impact collisions in the plasma, and suitable reaction partners for the molecular fragments are added either just before or just after passage through the plasma source. Plasma abatement is the ideal technology for treatment of industrial emissions of the very stable perfluorinated compounds used in the semiconductor industry for thin film etching and cleaning of chamber for chemical vapor deposition: CF.sub.4, C.sub.2 F.sub.6, and NF.sub.3. These compounds have been found to have extremely high global warming potential.
    • 将装置描述为具有各种应用的等离子体的源。 特别令人感兴趣的是气体消除,其中来自处理室的有毒或环境有害的流出物通过通过该等离子体源被转化为无害和稳定的产物。 等离子体通过适当强度的磁场和适当频率的微波能量之间的协作而在气体中产生。 微波场通过微波透明材料的窗口进入腔室,以遇到由放置在腔室的相对侧上的永磁体形成的磁场,并被设计成使得微波场的传播方向与磁场线平行 在房间的中心。 为了消除气体,等离子体源位于处理室的下游。 处理室流出物中的气体分子被等离子体中的电子碰撞碰撞解离,分子片段的合适的反应伴侣在通过等离子体源之前或之后被加入。 等离子体消除是用于半导体工业中用于化学气相沉积的室的薄膜蚀刻和清洁的非常稳定的全氟化合物的工业排放的理想技术:CF4,C2F6和NF3。 已发现这些化合物具有极高的全球变暖潜能。
    • 140. 发明授权
    • ECR plasma source for remote processing
    • ECR等离子源进行远程处理
    • US5451259A
    • 1995-09-19
    • US198524
    • 1994-02-17
    • Ole D. Krogh
    • Ole D. Krogh
    • B01J12/00B01J19/08B01J19/12H01J37/32C23C16/30C23C16/50H01L21/00H05H1/00
    • H01J37/3222B01J12/002B01J19/087B01J19/126H01J37/32192H01J37/32238H01J37/32678B01J2219/0852B01J2219/0894
    • An apparatus is described as a source of a plasma for remote, or downstream, processing with a variety of applications. The plasma is produced in a gas by cooperation between a magnetic field of the proper strength and microwave energy of the proper frequency. The microwave field enters a chamber through a window of microwave transparent material to encounter a magnetic field formed by a permanent magnet placed on the opposite side of the chamber and designed such that the direction of propagation of the microwave field is parallel with the magnetic field lines in the center of the chamber. A gas or gas mixture is introduced to the chamber and the plasma effluent is guided by gas pressure gradients to a workpiece located downstream from the source chamber. With the proper choice of gases, pressure, and power the workpiece or substrate can be effected by deposition of a thin film, etching of the substrate surface, or otherwise modifying the surface or body of the workpiece. The areas of technology intended to benefit from this invention include, but are not limited to semiconductors, superconductors, optical thin films, plasma sterilization, as well as other industrial methods involving surface treatment and modifications.
    • 将装置描述为用于远程或下游处理的各种应用的等离子体的源。 等离子体通过适当强度的磁场和适当频率的微波能量之间的协作而在气体中产生。 微波场通过微波透明材料的窗口进入腔室,以遇到由放置在腔室的相对侧上的永磁体形成的磁场,并被设计成使得微波场的传播方向与磁场线平行 在房间的中心。 将气体或气体混合物引入室中,并且等离子体流出物由气体压力梯度引导到位于源室下游的工件。 通过适当选择气体,压力和动力,可以通过沉积薄膜,蚀刻基材表面或以其它方式改变工件的表面或主体来实现工件或基底。 旨在受益于本发明的技术领域包括但不限于半导体,超导体,光学薄膜,等离子体灭菌以及涉及表面处理和修改的其它工业方法。