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131. 发明申请

US20100200855A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100200855A1
公开(公告)日：2010-08-12
申请号：US12766172
申请日：2010-04-23
申请人： Hideomi SUZAWA , Yoshihiro KUSUYAMA , Shunpei YAMAZAKI
发明人： Hideomi SUZAWA , Yoshihiro KUSUYAMA , Shunpei YAMAZAKI
IPC分类号： H01L29/04
CPC分类号： H01L29/78621 , G02F1/1368 , H01L27/124 , H01L27/1244 , H01L27/1288 , H01L29/06 , H01L29/66765 , H01L29/78669
摘要： The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type can be completed with three photomask.
摘要翻译：本发明的目的是提供一种实现生产率和产量提高的有源矩阵液晶显示装置。在本发明中，使用相同的蚀刻气体选择性地蚀刻包括含有金属材料的导电膜和含有一种导电类型的杂质元素的第二非晶半导体膜和非晶半导体膜的层叠膜，以形成第一非晶半导体膜1001成锥形。由此，可以解决像素电极1003的覆盖问题，并且可以用三个光掩模来完成反交错类型。

132. 发明申请

US20100176720A1 DISPLAY DEVICE, ELECTRONIC APPARATUS, AND METHOD OF FABRICATING THE DISPLAY DEVICE 有权
标题翻译：显示装置，电子装置以及制造显示装置的方法
公开(公告)号：US20100176720A1
公开(公告)日：2010-07-15
申请号：US12699942
申请日：2010-02-04
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01J1/62 , H01L33/16
CPC分类号： H01L27/3248 , H01L27/1222 , H01L27/1277 , H01L27/1288 , H01L27/153 , H01L27/322 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L29/78675 , H01L51/001 , H01L51/0011 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
摘要： It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.
摘要翻译：本发明的目的是提供一种以低成本，高产率制造具有高图像质量和高可靠性的显示装置的技术。本发明在像素区域中的像素电极层上方具有间隔物，并且覆盖覆盖像素电极层的周边的用作隔板的绝缘层。当在像素电极层上形成发光材料时，用于选择性形成的掩模由间隔物支撑，从而防止掩模由于其扭转和偏转而与像素电极层接触。因此，像素电极层中不会发生由掩模产生的裂纹等的损伤。因此，像素电极层的形状不具有缺陷，可以制造出以高可靠性进行高分辨率显示的显示装置。

133. 发明申请

US20100167464A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100167464A1
公开(公告)日：2010-07-01
申请号：US12634048
申请日：2009-12-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L21/336
CPC分类号： H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L29/66969 , H01L29/7869
摘要： An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.
摘要翻译：目的在于减少诸如有源矩阵显示装置的半导体器件中的晶体管的驱动能力而不降低寄生电容的电容值。此外，另一个目的是提供一种以低成本降低寄生电容的电容值的半导体器件。在由与晶体管的栅极电极相同的材料层形成的布线和由与源电极或漏电极相同的材料层形成的布线之间设置绝缘层，而不是栅极绝缘层。

134. 发明申请

US20100167437A1 PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD 有权
标题翻译：使用剥离方法制造显示装置的剥离方法和方法
公开(公告)号：US20100167437A1
公开(公告)日：2010-07-01
申请号：US12720761
申请日：2010-03-10
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yuugo GOTO , Yumiko OHNO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yuugo GOTO , Yumiko OHNO
IPC分类号： H01L33/52 , H01L21/78
CPC分类号： H01L27/1218 , H01L21/02175 , H01L21/28008 , H01L21/324 , H01L21/425 , H01L21/707 , H01L21/823487 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L29/78603 , H01L33/005 , H01L33/0054 , H01L51/003 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2933/0016
摘要： The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
摘要翻译：本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

135. 发明申请

US20100157404A1 LASER TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：激光治疗装置及制造半导体器件的方法
公开(公告)号：US20100157404A1
公开(公告)日：2010-06-24
申请号：US12719899
申请日：2010-03-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： G02B26/12 , G02B26/10
CPC分类号： H01L21/02691 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/08 , B23K26/082 , B23K26/0821 , C30B13/32 , G02B26/101 , G02B26/105 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01S5/4025
摘要： A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an fθ lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed. The number of optical systems is not limited; any number of optical systems is allowed as long as a means for supplying a plurality of laser beams is provided.
摘要翻译：提供一种激光治疗装置，其能够在大基板的整个表面上将激光束照射到要形成TFT的位置以实现结晶，从而形成具有高晶粒直径的晶体半导体膜吞吐量。激光治疗装置包括激光振荡装置，用于会聚准直透镜或柱面透镜等激光束的透镜，用于改变激光束的光路的固定镜，用于径向扫描激光的第一可动镜梁在二维方向，和一个f＆thetas; 用于在激光束扫描的情况下保持扫描速度恒定的透镜。这些结构部件被统称为一个光学系统。图1所示的激光治疗装置 1具有其中放置五个这样的光学系统的结构。光学系统的数量不受限制; 只要提供用于供给多个激光束的装置，就允许任何数量的光学系统。

136. 发明申请

US20100151663A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20100151663A1
公开(公告)日：2010-06-17
申请号：US12634107
申请日：2009-12-09
申请人： Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.
摘要翻译：当单晶半导体层熔化时，氧的向外扩散被促进。具体地，形成SOI衬底，其中形成具有设置在基底衬底上的包含氧的结合层的SOI结构和设置在包括氧的接合层上的单晶半导体层，并且部分单晶半导体层在基底基板在高于或等于500℃且低于基底的熔点的温度下被加热的状态下通过用激光束照射而熔化。

137. 发明申请

US20100117079A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100117079A1
公开(公告)日：2010-05-13
申请号：US12615615
申请日：2009-11-10
申请人： Hidekazu MIYAIRI , Takeshi OSADA , Kengo AKIMOTO , Shunpei YAMAZAKI
发明人： Hidekazu MIYAIRI , Takeshi OSADA , Kengo AKIMOTO , Shunpei YAMAZAKI
IPC分类号： H01L29/10 , H01L21/16 , H01L31/00 , H01L21/84
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78648
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced.
摘要翻译：作为显示装置具有更高的清晰度，像素数，栅极线和信号线的数量增加。当栅极线和信号线的数量增加时，存在难以安装包括用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，由此增加制造成本的问题。用于驱动像素部分的像素部分和驱动电路设置在相同的基板上，驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管使用介于氧化物半导体上方和下方的栅电极之间的氧化物半导体。因此，当像素部分和驱动电路设置在相同的基板上时，可以降低制造成本。

138. 发明申请

US20100084653A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100084653A1
公开(公告)日：2010-04-08
申请号：US12571552
申请日：2009-10-01
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/0266 , H01L27/1225 , H01L27/124
摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
摘要翻译：保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位电极。

139. 发明申请

US20100072468A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100072468A1
公开(公告)日：2010-03-25
申请号：US12556594
申请日：2009-09-10
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/1225 , G02F1/13392 , G02F1/13458 , G02F2001/13398 , G09G2300/0804 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/04 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869 , H01L51/5221
摘要： A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
摘要翻译：显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管层。在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。

140. 发明申请

US20100072467A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100072467A1
公开(公告)日：2010-03-25
申请号：US12556593
申请日：2009-09-10
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/3276 , H01L27/1225 , H01L27/3262 , H01L29/7869 , H01L51/5221
摘要： A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.
摘要翻译：显示装置包括其中像素以矩阵形式布置的像素部分，该像素包括具有不同量的氧并且具有通道保护层的至少两种氧化物半导体层的组合的反交错薄膜晶体管半导体层作为与栅电极层重叠的沟道形成区域和与反交错薄膜晶体管电连接的像素电极层。在该显示装置的像素部的周围，设置由与像素电极层相同的材料构成的导电层的焊盘部。另外，导电层与形成在对置基板上的公共电极层电连接。

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