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131. 发明申请

US20130084452A1 Very thin high coercivity film and process for making it 有权
标题翻译：非常薄的高矫顽力膜及其制造方法
公开(公告)号：US20130084452A1
公开(公告)日：2013-04-04
申请号：US13200790
申请日：2011-09-30
申请人： Kunliang Zhang , Min Zheng , Min Li
发明人： Kunliang Zhang , Min Zheng , Min Li
IPC分类号： B32B3/00 , C23F1/00 , H01F41/14
CPC分类号： G11B5/3163 , B32B15/01 , H01F10/123 , H01F41/22 , H01F41/34 , Y10T428/265
摘要： High Hc (>4,000 Oe) and high Hk (>1 Tesla) has been achieved in FePt films as thin as 70 Angstroms. This was accomplished by starting with a relatively thick film having the required high coercivity, coating it with a suitable material such as Ta, and then using ion beam etching to remove surface material until the desired thickness was reached.
摘要翻译：在70埃的FePt薄膜中已经实现了高Hc（> 4,000 Oe）和高Hk（> 1特斯拉）。这是通过用具有所需高矫顽力的相对厚的膜开始，用合适的材料如Ta涂覆，然后使用离子束蚀刻去除表面材料直至达到所需的厚度来实现的。

132. 发明授权

US08339754B2 TMR or CPP structure with improved exchange properties 有权
标题翻译：具有改进的交换性能的TMR或CPP结构
公开(公告)号：US08339754B2
公开(公告)日：2012-12-25
申请号：US13135277
申请日：2011-06-30
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
摘要翻译：在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1至5埃厚的非磁性层。优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。可选地，插入层可以形成在AP2钉扎层内。插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

133. 发明授权

US08337676B2 Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
标题翻译：具有自然氧化双MgO阻挡层的低阻隧道磁阻传感器
公开(公告)号：US08337676B2
公开(公告)日：2012-12-25
申请号：US12806082
申请日：2010-08-05
申请人： Tong Zhao , Kunliang Zhang , Hui Chuan Wang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Kunliang Zhang , Hui Chuan Wang , Yu-Hsia Chen , Min Li
IPC分类号： C23C14/34
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/307 , Y10T428/1114 , Y10T428/1143
摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.
摘要翻译：通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。可以改变NOX时间和压力以实现至少34％的MR比和2.1ohm-um2的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。第二Mg层用于防止相邻铁磁层的氧化。在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽在读头。

134. 发明授权

US08329320B2 Laminated high moment film for head applications 有权
标题翻译：用于头部应用的层压高力矩胶片
公开(公告)号：US08329320B2
公开(公告)日：2012-12-11
申请号：US12291715
申请日：2008-11-13
申请人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
发明人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
IPC分类号： G11B5/31 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T428/11 , Y10T428/115 , Y10T428/1171
摘要： A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.
摘要翻译：公开了一种具有非AFC配置的叠层高力矩薄膜，其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。层叠膜包括多个（B / M）堆叠，其中B是取向层，M是高力矩层。相邻的（B / M）堆叠被非晶层隔开，其破坏相邻高力矩层之间的磁耦合，并且在保持高磁矩并且实现Hch，Hce和Hk的低值的同时降低硬轴方向的剩磁。非晶材料层可以由Hf，Zr，Ta，Al，Mg，Zn，Ti，Cr，Nb或Si中的一种或多种的氧化物，氮化物或氮氧化物制成，或者可以是Hf，Zr，Ta， Nb，CoFeB，CoB，FeB或CoZrNb。对准层是FCC软铁磁材料或非磁性FCC材料。

135. 发明授权

US08315020B2 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus 有权
标题翻译：制造磁阻效应元件和磁记录和重放装置的方法
公开(公告)号：US08315020B2
公开(公告)日：2012-11-20
申请号：US12585855
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/36 , C23C14/5833 , C23C14/584 , C23C14/5846 , C23C14/5853 , G01R33/093 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.
摘要翻译：提供一种制造磁阻效应元件的方法。磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电部分穿透绝缘层。该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 氢原子，氢离子，氢等离子体，氢原子，氘分子，氘原子，氘离子，氘离子和氘原子中的至少一种的气体进行第二次处理。。

136. 发明授权

US08259420B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08259420B2
公开(公告)日：2012-09-04
申请号：US12658005
申请日：2010-02-01
申请人： Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/39 , C21D1/04
CPC分类号： G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052
摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，其中用弱等离子体蚀刻处理FL1的顶表面，以实现增强的dR / R，同时保持低的RA和TMR或GMR传感器中的低λ。弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B的非磁性元素。当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

137. 发明授权

US08164862B2 Seed layer for TMR or CPP-GMR sensor 有权
标题翻译：种子层用于TMR或CPP-GMR传感器
公开(公告)号：US08164862B2
公开(公告)日：2012-04-24
申请号：US12080277
申请日：2008-04-02
申请人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
发明人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B5/3983 , H01F10/30 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A composite seed layer that reduces the shield to shield distance in a read head while improving Hex (exchange coupling field) and Hex/Hc (Hc=coercivity) is disclosed and has a SM/A/SM/B configuration in which the SM layers are soft magnetic layers, the A (amorphous) layer is made of at least one of Co, Fe, Ni, and includes one or more amorphous elements, and the B layer is a buffer layer that contacts the AFM (anti-ferromagnetic) layer in the spin valve. The SM/A/SM stack together with the S1 (bottom) shield forms an effective shield such that the buffer layer serves as the effective seed layer while maintaining a blocking temperature of 260° C. in the AFM layer. The lower SM layer may be omitted. Examples of the amorphous layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr while the buffer layer may be Cu, Ru, Cr, Al, or NiFeCr.
摘要翻译：公开了一种复合种子层，其在改进Hex（交换耦合场）和Hex / Hc（Hc =矫顽力）的同时减小了读头中的屏蔽距离，并具有SM / A / SM / B配置，其中SM层是软磁性层，A（非晶）层由Co，Fe，Ni中的至少一种构成，并且包括一个或多个非晶元素，并且B层是与AFM（反铁磁）层接触的缓冲层在自旋阀中。 SM / A / SM堆叠与S1（底部）屏蔽件形成有效屏蔽，使得缓冲层用作有效种子层，同时在AFM层中保持260℃的阻挡温度。可以省略下层SM层。非晶层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr，而缓冲层可以是Cu，Ru，Cr，Al或NiFeCr。

138. 发明授权

US08059374B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08059374B2
公开(公告)日：2011-11-15
申请号：US12319972
申请日：2009-01-14
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127 , H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1×10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

139. 发明申请

US20110268992A1 TMR or CPP structure with improved exchange properties 有权
公开(公告)号：US20110268992A1
公开(公告)日：2011-11-03
申请号：US13135277
申请日：2011-06-30
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/39 , B05D5/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.

140. 发明申请

US20110205669A1 METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 审中-公开
标题翻译：制造磁阻效应元件，磁头组件和磁记录和再现装置的方法
公开(公告)号：US20110205669A1
公开(公告)日：2011-08-25
申请号：US12881879
申请日：2010-09-14
申请人： Shuichi Murakami , Hiromi Yuasa , Michiko Hara , Yoshihiko Fuji , Hideaki Fukuzawa , Kunliang Zhang , Min Li
发明人： Shuichi Murakami , Hiromi Yuasa , Michiko Hara , Yoshihiko Fuji , Hideaki Fukuzawa , Kunliang Zhang , Min Li
IPC分类号： G11B5/48 , B05D3/06 , B05D1/36
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/3983 , H01L27/224 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a method for manufacturing a magneto-resistance effect element is disclosed. The element has first and second magnetic layers, and an intermediate layer provided between the first and second magnetic layers. The intermediate layer has an insulating layer and a conductive portion penetrating through the insulating layer. The method can include forming a structure body having the insulating layer and the conductive portion, performing a first treatment including irradiating the structure body with at least one of ion including at least one selected from the group consisting of argon, xenon, helium, neon and krypton and a plasma including at least one selected from the group, and performing a second treatment including at least one of exposure to gas containing oxygen or nitrogen, irradiation of ion beam containing oxygen or nitrogen, irradiation of plasma containing oxygen or nitrogen, to the structure body submitted to the first treatment.
摘要翻译：根据一个实施例，公开了一种用于制造磁阻效应元件的方法。元件具有第一和第二磁性层，以及设置在第一和第二磁性层之间的中间层。中间层具有绝缘层和穿透绝缘层的导电部分。该方法可以包括形成具有绝缘层和导电部分的结构体，进行第一处理，包括用包含从氩，氙，氦，氖和氖中选出的至少一种的离子中的至少一种照射结构体的第一处理和氪气和包括选自该组中的至少一种的等离子体，并且执行包括暴露于含氧或氮气的气体中的至少一种的照射，含有氧或氮的离子束的照射，含有氧或氮的等离子体的照射，结构体提交第一次治疗。

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